JP4903664B2 - 電子放出素子の製造方法 - Google Patents
電子放出素子の製造方法 Download PDFInfo
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- JP4903664B2 JP4903664B2 JP2007273036A JP2007273036A JP4903664B2 JP 4903664 B2 JP4903664 B2 JP 4903664B2 JP 2007273036 A JP2007273036 A JP 2007273036A JP 2007273036 A JP2007273036 A JP 2007273036A JP 4903664 B2 JP4903664 B2 JP 4903664B2
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- carbon nanotubes
- conductive
- organic substrate
- paste
- electron
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- 238000000034 method Methods 0.000 title claims description 32
- 238000004519 manufacturing process Methods 0.000 title claims description 19
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 70
- 239000002041 carbon nanotube Substances 0.000 claims description 70
- 229910021393 carbon nanotube Inorganic materials 0.000 claims description 70
- 239000000758 substrate Substances 0.000 claims description 54
- 239000002245 particle Substances 0.000 claims description 19
- DOIRQSBPFJWKBE-UHFFFAOYSA-N dibutyl phthalate Chemical compound CCCCOC(=O)C1=CC=CC=C1C(=O)OCCCC DOIRQSBPFJWKBE-UHFFFAOYSA-N 0.000 claims description 14
- 238000001035 drying Methods 0.000 claims description 14
- 239000011521 glass Substances 0.000 claims description 12
- 238000003756 stirring Methods 0.000 claims description 10
- SCYULBFZEHDVBN-UHFFFAOYSA-N 1,1-Dichloroethane Chemical compound CC(Cl)Cl SCYULBFZEHDVBN-UHFFFAOYSA-N 0.000 claims description 7
- 239000001856 Ethyl cellulose Substances 0.000 claims description 7
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 claims description 7
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 claims description 7
- SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-terpineol Natural products CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 claims description 7
- 229920001249 ethyl cellulose Polymers 0.000 claims description 7
- 235000019325 ethyl cellulose Nutrition 0.000 claims description 7
- 238000002156 mixing Methods 0.000 claims description 7
- 229940116411 terpineol Drugs 0.000 claims description 7
- 239000004014 plasticizer Substances 0.000 claims description 4
- 239000002904 solvent Substances 0.000 claims description 4
- 239000003381 stabilizer Substances 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- 239000002390 adhesive tape Substances 0.000 claims description 3
- 239000011261 inert gas Substances 0.000 claims description 3
- 238000000527 sonication Methods 0.000 claims description 3
- 238000011065 in-situ storage Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- 238000009434 installation Methods 0.000 description 4
- 238000009210 therapy by ultrasound Methods 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002923 metal particle Substances 0.000 description 2
- 239000006060 molten glass Substances 0.000 description 2
- 238000001241 arc-discharge method Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
- H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
- H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
- H01J29/04—Cathodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J31/00—Cathode ray tubes; Electron beam tubes
- H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
- H01J31/10—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes
- H01J31/12—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes with luminescent screen
- H01J31/123—Flat display tubes
- H01J31/125—Flat display tubes provided with control means permitting the electron beam to reach selected parts of the screen, e.g. digital selection
- H01J31/127—Flat display tubes provided with control means permitting the electron beam to reach selected parts of the screen, e.g. digital selection using large area or array sources, i.e. essentially a source for each pixel group
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2201/00—Electrodes common to discharge tubes
- H01J2201/30—Cold cathodes
- H01J2201/304—Field emission cathodes
- H01J2201/30446—Field emission cathodes characterised by the emitter material
- H01J2201/30453—Carbon types
- H01J2201/30469—Carbon nanotubes (CNTs)
Description
Claims (4)
- 導電基板と、カーボンナノチューブ及び有機基質を含むペーストと、複数のガラス粒子及び導電粒子が有機基質に混合して形成された導電ペーストと、を準備する第一段階と、
前記導電基板に前記導電ペーストを塗布した後、前記導電ペーストを乾燥させて導電層を形成する第二段階と、
前記導電層に前記カーボンナノチューブ及び有機基質を含むペーストを塗布した後、前記カーボンナノチューブ及び有機基質を含むペーストを乾燥させて、前記カーボンナノチューブを含む電子放出層を形成する第三段階と、
前記導電基板と、前記導電層と、前記カーボンナノチューブを含む電子放出層と、を真空又は不活性ガスの雰囲気において乾燥させて焙焼する第四段階であって、前記導電基板と、前記導電層と、前記カーボンナノチューブを含む電子放出層と、を320℃で20分間加熱して前記有機基質を除去し、430℃まで昇温させて、30分間加熱して前記複数のガラス粒子を溶融状態に形成した後、室温まで下げる第四段階と、
を含み、
前記導電ペーストの有機基質は、エチルセルロースと、テルピネオールと、フタル酸ジブチルと、を混合して、60℃〜80℃で3〜5時間攪拌する工程に従って形成されることを特徴とする電子放出素子の製造方法。 - 前記カーボンナノチューブ及び有機基質を含むペーストの製造方法は、
前記有機基質を準備する段階と、
前記カーボンナノチューブをジクロロエタン溶液に分散させて、前記カーボンナノチューブを含む溶液を形成する段階と、
前記カーボンナノチューブを含む溶液を前記有機基質に混合させて、超音波処理によって均一に分散させる段階と、
前記カーボンナノチューブを含む溶液及び前記有機基質に対して水浴処理を行い、ジクロロエタン溶液を完全に蒸発させる段階と、
を含むことを特徴とする、請求項1に記載の電子放出素子の製造方法。 - 前記カーボンナノチューブ及び有機基質を含むペーストの有機基質の製造方法は、
80℃〜110℃でオイルバス処理及び攪拌加工によって安定剤であるエチルセルロースを溶剤であるテルピネオールに溶解させた段階と、
可塑剤であるフタル酸ジブチルを添加して、前記オイルバス処理及び攪拌加工を10〜25時間続く段階と、
を含むことを特徴とする、請求項2に記載の電子放出素子の製造方法。 - 第四段階では、前記乾燥させて焙焼する処理の後、前記電子放出層の表面を研磨処理し、又は、粘着テープで前記電子放出層の表面に形成された前記カーボンナノチューブを除去することを特徴とする、請求項1に記載の電子放出素子の製造方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN200610156847.4 | 2006-11-15 | ||
CN200610156847A CN101188179B (zh) | 2006-11-15 | 2006-11-15 | 场发射电子源的制造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008124013A JP2008124013A (ja) | 2008-05-29 |
JP4903664B2 true JP4903664B2 (ja) | 2012-03-28 |
Family
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Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007273036A Active JP4903664B2 (ja) | 2006-11-15 | 2007-10-19 | 電子放出素子の製造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7927652B2 (ja) |
JP (1) | JP4903664B2 (ja) |
CN (1) | CN101188179B (ja) |
Families Citing this family (7)
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CN101211732B (zh) * | 2006-12-27 | 2010-09-29 | 清华大学 | 场发射灯管的制造方法 |
CN101877299A (zh) * | 2010-06-29 | 2010-11-03 | 彩虹集团公司 | 一种场致发射平板显示器件及其制作方法 |
CN101880035A (zh) | 2010-06-29 | 2010-11-10 | 清华大学 | 碳纳米管结构 |
CN102347180B (zh) * | 2010-07-29 | 2015-06-10 | 海洋王照明科技股份有限公司 | 碳纳米管阴极材料及其制备方法 |
US8779376B2 (en) * | 2012-01-09 | 2014-07-15 | Fei Company | Determination of emission parameters from field emission sources |
US10175005B2 (en) * | 2015-03-30 | 2019-01-08 | Infinera Corporation | Low-cost nano-heat pipe |
CN111900065A (zh) * | 2020-07-31 | 2020-11-06 | 兰州空间技术物理研究所 | 一种具有强粘附性的碳纳米管浆料及其制备方法 |
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US5082345A (en) | 1990-08-13 | 1992-01-21 | At&T Bell Laboratories | Optical fiber connecting device including attenuator |
US6033924A (en) * | 1997-07-25 | 2000-03-07 | Motorola, Inc. | Method for fabricating a field emission device |
US6409567B1 (en) * | 1997-12-15 | 2002-06-25 | E.I. Du Pont De Nemours And Company | Past-deposited carbon electron emitters |
US6277318B1 (en) | 1999-08-18 | 2001-08-21 | Agere Systems Guardian Corp. | Method for fabrication of patterned carbon nanotube films |
US7449081B2 (en) * | 2000-06-21 | 2008-11-11 | E. I. Du Pont De Nemours And Company | Process for improving the emission of electron field emitters |
JP4802363B2 (ja) | 2000-11-29 | 2011-10-26 | 日本電気株式会社 | 電界放出型冷陰極及び平面画像表示装置 |
TW480537B (en) | 2001-01-19 | 2002-03-21 | Ind Tech Res Inst | Method for enhancing emission efficiency of carbon nanotube emission source field |
JP3839713B2 (ja) * | 2001-12-12 | 2006-11-01 | 株式会社ノリタケカンパニーリミテド | 平面ディスプレイの製造方法 |
JP3633598B2 (ja) | 2002-11-28 | 2005-03-30 | ソニー株式会社 | 電子放出素子の製造方法及び表示装置の製造方法 |
KR100879293B1 (ko) | 2002-12-26 | 2009-01-19 | 삼성에스디아이 주식회사 | 다층 구조로 형성된 전자 방출원을 구비한 전계 방출표시장치 |
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-
2006
- 2006-11-15 CN CN200610156847A patent/CN101188179B/zh active Active
-
2007
- 2007-10-05 US US11/973,222 patent/US7927652B2/en active Active
- 2007-10-19 JP JP2007273036A patent/JP4903664B2/ja active Active
Also Published As
Publication number | Publication date |
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CN101188179B (zh) | 2010-05-26 |
US20080214082A1 (en) | 2008-09-04 |
JP2008124013A (ja) | 2008-05-29 |
US7927652B2 (en) | 2011-04-19 |
CN101188179A (zh) | 2008-05-28 |
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