JP4761319B2 - 窒化物半導体装置とそれを含む電力変換装置 - Google Patents
窒化物半導体装置とそれを含む電力変換装置 Download PDFInfo
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Description
なお、第1窒化物半導体層は、p型となるように不純物がドーピングされる代わりに、キャリア走行層に比べて小さな格子定数と広い禁制帯幅を有していてもよい。この場合、第1窒化物半導体層は、100nm以上の厚さを有することが好ましい。この第1窒化物半導体層は、AlyGa1−yN(0<y≦1)で形成され得る。第1窒化物半導体層は、AlyGa1−yN(0.03≦y≦0.15)からなることが好ましい。
図1は、本発明に密接に関連する参考形態1による窒化物半導体装置の模式的断面図を示している。なお、本願の図面において、同一の参照番号は、同一部分または相当部分を表している。また、本願の図面において、長さ、幅、厚さなどの寸法関係は図面の明瞭化と簡略化のために適宜に変更されており、実際の寸法関係を表してはいない。
図3の模式的断面図は、本発明の実施形態1による窒化物半導体装置を示している。図1の窒化物半導体装置ではゲート電極8の下端がキャリア走行層である第2窒化物半導体層4と障壁層である第3窒化物半導体層5のとの界面よりも上方に位置するようにリセス領域10の深さと絶縁膜9の厚さが設定されているのに対して、この実施形態1における図3の窒化物半導体装置ではゲート電極8の下端が第2窒化物半導体層4と第3窒化物半導体層5のとの界面よりも下方に位置するようにリセス領域10の深さと絶縁膜9の厚さが設定されていることのみにおいて異なっている。
図6は、本発明の参考形態2による窒化物半導体装置の模式的断面図を示している。この図6の電界効果型トランジスタは、図5のトランジスタに比べて、p型GaNの第1窒化物半導体層3がp型InGaNの第1窒化物半導体層13に変更されている。すなわち、第1窒化物半導体層13は、バッファ層2に比べて、狭い禁制帯幅を有している。
図8は、本発明の実施形態2による窒化物半導体装置の模式的断面図を示している。この図8の電界効果型トランジスタは、図5のトランジスタに比べて、p型GaNの第1窒化物半導体層3がAlGaNの第1窒化物半導体層23に変更されている。すなわち、第1窒化物半導体層23は、バッファ層2の最上面層および第2窒化物半導体層4に比べて、広い禁制帯幅を有している。
図9は、本発明に密接に関連する参考形態3による窒化物半導体装置の模式的断面図を示している。この図9のダイオードの構造おいては、図6のトランジスタの構造に比べて、アノード電極16がソース電極6に対応し、カソード電極17がドレイン電極7に対応している。これらのアノード電極とカソード電極は、ともにTi/Alで形成されている。また、ゲート電極18はアノード電極16上と絶縁膜9、11上に形成されており、すなわちアノード電極16に電気的に接続されている。このゲート電極18は、Ni/Auで形成されている。
図11は、本発明に密接に関連するの参考形態4による電力変換装置の主要部を示す回路図である。この図11の力率改善回路は、交流電源51、ダイオード52〜56、インダクタ57、電界効果トランジスタ58、キャパシタ59、および負荷抵抗60を含んでいる。ダイオード52〜56には参考形態3による図9の窒化物半導体装置が用いられ、電界効果トランジスタ58には参考形態2の変形例3による図7の窒化物半導体装置がそれぞれ用いている。
Claims (14)
- 基板上においてバッファ層を介して順次接して積層された第1、第2、および第3の窒化物半導体層を含み、前記第3窒化物半導体層は前記第2窒化物半導体層であるキャリア走行層に比べて広い禁制帯幅を有し、
前記第3窒化物半導体層の上面から前記キャリア走行層の部分的深さまで掘り込まれたリセス領域、
前記リセス領域を挟む一方側と他方側において前記第3窒化物半導体層または前記第2窒化物半導体層に接してそれぞれ形成された第1電極と第2電極、
前記第3窒化物半導体層上と前記リセス領域の内面上に形成された絶縁膜、および
前記リセス領域において前記絶縁膜上に形成された制御電極をさらに含み、
前記制御電極の下端は前記第3窒化物半導体層の下面より下方に位置しており、
前記第1窒化物半導体層はp型となるように不純物がドーピングされていることを特徴とする窒化物半導体装置。 - 前記第2窒化物半導体層は20nm以上の厚さを有することを特徴とする請求項1に記載の窒化物半導体装置。
- 基板上においてバッファ層を介して順次接して積層された第1、第2、および第3の窒化物半導体層を含み、前記第3窒化物半導体層は前記第2窒化物半導体層であるキャリア走行層に比べて広い禁制帯幅を有し、
前記第3窒化物半導体層の上面から前記キャリア走行層の部分的深さまで掘り込まれたリセス領域、
前記リセス領域を挟む一方側と他方側において前記第3窒化物半導体層または前記第2窒化物半導体層に接してそれぞれ形成された第1電極と第2電極、
前記第3窒化物半導体層上と前記リセス領域の内面上に形成された絶縁膜、および
前記リセス領域において前記絶縁膜上に形成された制御電極をさらに含み、
前記制御電極の下端は前記第3窒化物半導体層の下面より下方に位置しており、
前記第1窒化物半導体層は前記キャリア走行層に比べて小さな格子定数と広い禁制帯幅を有していることを特徴とする窒化物半導体装置。 - 前記第1窒化物半導体層は100nm以上の厚さを有することを特徴とする請求項3に記載に記載の窒化物半導体装置。
- 前記第1窒化物半導体層はAlyGa1−yN(0<y≦1)で形成されていることを特徴とする請求項3または4に記載の窒化物半導体装置。
- 前記第1窒化物半導体層はAlyGa1−yN(0.03≦y≦0.15)からなることを特徴とする請求項3から5のいずれかに記載の窒化物半導体装置。
- 前記制御電極は、前記第3窒化物半導体層の上面上の前記絶縁膜上にも延在していることを特徴とする請求項1から6のいずれかに記載の窒化物半導体装置。
- 前記第3窒化物半導体層の上面上に接して形成された絶縁膜と前記リセス領域の内面上に接して形成された絶縁膜とは異なる種類の絶縁膜であることを特徴とする請求項1から
7のいずれかに記載の窒化物半導体装置。 - 前記第1窒化物半導体層の上面と前記リセス領域の底面との距離が500nm以下であることを特徴とする請求項1から8のいずれかに記載の窒化物半導体装置。
- 前記第2窒化物半導体層はGaNからなることを特徴とする請求項1から9のいずれかに記載の窒化物半導体装置。
- 前記第1電極と前記制御電極とが電気的に接続されていることを特徴とする請求項1から10のいずれかに記載の窒化物半導体装置。
- 前記第1電極は前記第2窒化物半導体層とオーム性接触していることを特徴とする請求項1から11のいずれかに記載の窒化物半導体装置。
- 前記第1電極と前記制御電極とは同一材料で構成されていることを特徴とする請求項1から12のいずれかに記載の窒化物半導体装置。
- 請求項1から13のいずれかに記載の窒化物半導体装置を含むことを特徴とする電力変換装置。
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US12/388,270 US20090206371A1 (en) | 2008-02-19 | 2009-02-18 | Nitride semiconductor device and power conversion apparatus including the same |
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