JP4741630B2 - 半導体装置の動作方法 - Google Patents
半導体装置の動作方法 Download PDFInfo
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- JP4741630B2 JP4741630B2 JP2008153030A JP2008153030A JP4741630B2 JP 4741630 B2 JP4741630 B2 JP 4741630B2 JP 2008153030 A JP2008153030 A JP 2008153030A JP 2008153030 A JP2008153030 A JP 2008153030A JP 4741630 B2 JP4741630 B2 JP 4741630B2
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- Prior art keywords
- wide gap
- temperature
- bipolar semiconductor
- gap bipolar
- semiconductor device
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- H01L23/045—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body the other leads having an insulating passage through the base
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Description
2001 IEEE ELECTRON DEVICE LETTERS, Vol.22, No.3, p.127-p.129 Proceedings of the 14th International Symposium on Power Semiconductor Devices & ICs 2002の p.41-p.44
={(ビルドイン電圧)+(オン抵抗)×(通電電流)}×(通電電流)+(スイッチング損失)・・・(1)
SiのIGBTはSiの自励型サイリスタに比べて、オン抵抗がやや大きい。そのために定常損失はやや大きい。しかし、スイッチング速度が非常に速いのでスイッチング損失が非常に小さく、結果としてトータル損失が小さい。SiCなどのワイドギャップバイポーラ半導体装置は、オン抵抗がSiバイポーラ半導体装置よりも小さい。しかしSiCはSiよりエネルギーギャップが大きい。そのためにSiCの半導体装置のビルドイン電圧はSiの半導体装置のビルトイン電圧に比べると2.2から6.1倍と遙かに大きい。従ってSiCの半導体装置は定常損失が非常に大きくなるので、トータル損失はSiの半導体装置よりも大きくなる。以上のように、従来の技術では低損失かつ可制御電流の大きいSiCのパワー半導体装置の実現は困難である。
以上に述べた考察および実験結果に基づいて、本発明の動作方法は、
ワイドギャップ半導体を用いた、順方向特性にビルドイン電圧を有するワイドギャップバイポーラ半導体素子、
前記ワイドギャップバイポーラ半導体素子を収納し、前記ワイドギャップバイポーラ半導体素子を外部の装置に接続するための電気接続手段を有する半導体パッケージ、及び
前記半導体パッケージ内の前記ワイドギャップバイポーラ半導体素子を50℃以上、750℃以下の温度範囲に加熱するための発熱手段を有する半導体装置を動作させる動作方法であって、
通電開始前にあらかじめ前記ワイドギャップバイポーラ半導体素子を前記発熱手段によって50℃以上、200℃未満の第1の温度に加熱し、
通電開始後、前記ワイドギャップバイポーラ半導体素子が200℃以上、750℃以下の第2の温度になるまで、前記ワイドギャップバイポーラ半導体素子を定格電流よりも小さい通電電流で動作させ、
前記ワイドギャップバイポーラ半導体素子が前記第2の温度になった後、前記ワイドギャップバイポーラ半導体素子に対する定格電流までの通電を許容することを特徴とする。
また、一実施形態の動作方法では、前記通電開始後、前記ワイドギャップバイポーラ半導体素子の自己発熱に加えて、前記発熱手段によって前記ワイドギャップバイポーラ半導体素子の温度を上昇させることを特徴とする。
また、別の局面では、この発明の動作方法は、
ワイドギャップ半導体を用いた、順方向特性にビルドイン電圧を有するワイドギャップバイポーラ半導体素子、
前記ワイドギャップバイポーラ半導体素子を収納し、前記ワイドギャップバイポーラ半導体素子を外部の装置に接続するための電気接続手段を有する半導体パッケージ、及び
前記半導体パッケージ内の前記ワイドギャップバイポーラ半導体素子を50℃以上、750℃以下の温度範囲に加熱するための発熱手段を有する半導体装置を動作させる動作方法であって、
通電開始時に、前記ワイドギャップバイポーラ半導体素子が自己発熱により200℃以上、750℃以下の第3の温度になるまで、前記ワイドギャップバイポーラ半導体素子を定格電流よりも小さい通電電流で動作させ、
前記ワイドギャップバイポーラ半導体素子が前記第3の温度になった後、前記ワイドギャップバイポーラ半導体素子に対する定格電流までの通電を許容することを特徴とする。
また、一実施形態の動作方法では、通電開始時に、前記ワイドギャップバイポーラ半導体素子が自己発熱により前記第3の温度になるまで、前記ワイドギャップバイポーラ半導体素子の温度を徐々に上昇させることを特徴とする。
また、一実施形態の動作方法では、通電開始時に、前記ワイドギャップバイポーラ半導体素子が自己発熱により前記第3の温度になるまで、前記ワイドギャップバイポーラ半導体素子の温度を徐々に上昇させるために、前記通電電流を徐々に大きくすることを特徴とする。
また、さらに別の局面では、この発明の動作方法は、
ワイドギャップ半導体を用いた、順方向特性にビルドイン電圧を有するワイドギャップバイポーラ半導体素子、
前記ワイドギャップバイポーラ半導体素子を収納し、前記ワイドギャップバイポーラ半導体素子を外部の装置に接続するための電気接続手段を有する半導体パッケージ、及び
前記半導体パッケージ内の前記ワイドギャップバイポーラ半導体素子を50℃以上、750℃以下の温度範囲に加熱するための発熱手段を有する半導体装置を動作させる動作方法であって、
通電開始時に、前記ワイドギャップバイポーラ半導体素子を定格電流よりも小さい通電電流で動作させながら、前記ワイドギャップバイポーラ半導体素子の自己発熱により積層欠陥による劣化が飽和してオン電圧の上昇がなくなるまで待ち、
前記オン電圧の上昇がなくなった後、前記ワイドギャップバイポーラ半導体素子に対する定格電流までの通電を許容することを特徴とする。
《第1実施例》
《第2実施例》
《第3実施例》
《第4実施例》
《第5実施例》
2 ドリフト層
3 アノード領域
4 電界緩和領域
5 表面保護膜
6 アノード電極
7 カソード電極
8 リード線
9、11 リードピン
10、38、67、125 支持体
12 絶縁ガラス
13 pnダイオード素子
14 金属キャップ
15、46、85、127 ヒーター
18 温度センサ
21 カソード領域
22 バッファー領域
24 ベース領域
25 アノード領域
27 表面保護膜
28 アノード電極
31 ゲート電極
32 カソード電極
42 合成高分子化合物
51 GaNGTOサイリスタ
52 SiCホトダイオード
53 カソード領域
54 ゲート領域
55 アノード領域
57 表面保護膜
60 発光窓
80 受光部
88 ヒートシンク
90 インバータ装置
98 ファン
100a、100b スイッチングモジュール
Claims (6)
- ワイドギャップ半導体を用いた、順方向特性にビルドイン電圧を有するワイドギャップバイポーラ半導体素子、
前記ワイドギャップバイポーラ半導体素子を収納し、前記ワイドギャップバイポーラ半導体素子を外部の装置に接続するための電気接続手段を有する半導体パッケージ、及び
前記半導体パッケージ内の前記ワイドギャップバイポーラ半導体素子を50℃以上、750℃以下の温度範囲に加熱するための発熱手段を有する半導体装置を動作させる動作方法であって、
通電開始前にあらかじめ前記ワイドギャップバイポーラ半導体素子を前記発熱手段によって50℃以上、200℃未満の第1の温度に加熱し、
通電開始後、前記ワイドギャップバイポーラ半導体素子が200℃以上、750℃以下の第2の温度になるまで、前記ワイドギャップバイポーラ半導体素子を定格電流よりも小さい通電電流で動作させ、
前記ワイドギャップバイポーラ半導体素子が前記第2の温度になった後、前記ワイドギャップバイポーラ半導体素子に対する定格電流までの通電を許容することを特徴とする動作方法。 - 前記通電開始後、前記ワイドギャップバイポーラ半導体素子の自己発熱に加えて、前記発熱手段によって前記ワイドギャップバイポーラ半導体素子の温度を上昇させることを特徴とする請求項1に記載の動作方法。
- ワイドギャップ半導体を用いた、順方向特性にビルドイン電圧を有するワイドギャップバイポーラ半導体素子、
前記ワイドギャップバイポーラ半導体素子を収納し、前記ワイドギャップバイポーラ半導体素子を外部の装置に接続するための電気接続手段を有する半導体パッケージ、及び
前記半導体パッケージ内の前記ワイドギャップバイポーラ半導体素子を50℃以上、750℃以下の温度範囲に加熱するための発熱手段を有する半導体装置を動作させる動作方法であって、
通電開始時に、前記ワイドギャップバイポーラ半導体素子が自己発熱により200℃以上、750℃以下の第3の温度になるまで、前記ワイドギャップバイポーラ半導体素子を定格電流よりも小さい通電電流で動作させ、
前記ワイドギャップバイポーラ半導体素子が前記第3の温度になった後、前記ワイドギャップバイポーラ半導体素子に対する定格電流までの通電を許容することを特徴とする動作方法。 - 請求項3に記載の動作方法において、
通電開始時に、前記ワイドギャップバイポーラ半導体素子が自己発熱により前記第3の温度になるまで、前記ワイドギャップバイポーラ半導体素子の温度を徐々に上昇させることを特徴とする動作方法。 - 請求項4に記載の動作方法において、
通電開始時に、前記ワイドギャップバイポーラ半導体素子が自己発熱により前記第3の温度になるまで、前記ワイドギャップバイポーラ半導体素子の温度を徐々に上昇させるために、前記通電電流を徐々に大きくすることを特徴とする動作方法。 - ワイドギャップ半導体を用いた、順方向特性にビルドイン電圧を有するワイドギャップバイポーラ半導体素子、
前記ワイドギャップバイポーラ半導体素子を収納し、前記ワイドギャップバイポーラ半導体素子を外部の装置に接続するための電気接続手段を有する半導体パッケージ、及び
前記半導体パッケージ内の前記ワイドギャップバイポーラ半導体素子を50℃以上、750℃以下の温度範囲に加熱するための発熱手段を有する半導体装置を動作させる動作方法であって、
通電開始時に、前記ワイドギャップバイポーラ半導体素子を定格電流よりも小さい通電電流で動作させながら、前記ワイドギャップバイポーラ半導体素子の自己発熱により積層欠陥による劣化が飽和してオン電圧の上昇がなくなるまで待ち、
前記オン電圧の上昇がなくなった後、前記ワイドギャップバイポーラ半導体素子に対する定格電流までの通電を許容することを特徴とする動作方法。
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JP2008306193A (ja) | 2008-12-18 |
EP2398049A2 (en) | 2011-12-21 |
JP2008294452A (ja) | 2008-12-04 |
CN101165860B (zh) | 2010-04-07 |
US20080204115A1 (en) | 2008-08-28 |
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CN101165860A (zh) | 2008-04-23 |
CN101271871B (zh) | 2011-05-25 |
US20050285228A1 (en) | 2005-12-29 |
EP2400543A3 (en) | 2013-08-28 |
EP1657748A1 (en) | 2006-05-17 |
JP2008311653A (ja) | 2008-12-25 |
EP2400543A2 (en) | 2011-12-28 |
US20080012042A1 (en) | 2008-01-17 |
EP1657748A4 (en) | 2009-09-30 |
JP4317550B2 (ja) | 2009-08-19 |
CN100416803C (zh) | 2008-09-03 |
WO2005020320A1 (ja) | 2005-03-03 |
JPWO2005020320A1 (ja) | 2006-10-19 |
CN1701439A (zh) | 2005-11-23 |
US20060208276A1 (en) | 2006-09-21 |
EP2398049A3 (en) | 2012-12-19 |
CN101271871A (zh) | 2008-09-24 |
US20060186435A1 (en) | 2006-08-24 |
US7482237B2 (en) | 2009-01-27 |
US7544970B2 (en) | 2009-06-09 |
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