SE9900882D0 - A high power IMPATT diode - Google Patents

A high power IMPATT diode

Info

Publication number
SE9900882D0
SE9900882D0 SE9900882A SE9900882A SE9900882D0 SE 9900882 D0 SE9900882 D0 SE 9900882D0 SE 9900882 A SE9900882 A SE 9900882A SE 9900882 A SE9900882 A SE 9900882A SE 9900882 D0 SE9900882 D0 SE 9900882D0
Authority
SE
Sweden
Prior art keywords
electrodes
electric field
semiconductor layer
high power
drift layer
Prior art date
Application number
SE9900882A
Other languages
English (en)
Inventor
Christopher Harris
Andrei Konstantinov
Original Assignee
Ind Mikroelektronikcentrum Ab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ind Mikroelektronikcentrum Ab filed Critical Ind Mikroelektronikcentrum Ab
Priority to SE9900882A priority Critical patent/SE9900882D0/sv
Publication of SE9900882D0 publication Critical patent/SE9900882D0/sv
Priority to US09/272,768 priority patent/US6252250B1/en
Priority to AU36890/00A priority patent/AU3689000A/en
Priority to PCT/SE2000/000463 priority patent/WO2000055921A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/864—Transit-time diodes, e.g. IMPATT, TRAPATT diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1608—Silicon carbide

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
SE9900882A 1999-03-12 1999-03-12 A high power IMPATT diode SE9900882D0 (sv)

Priority Applications (4)

Application Number Priority Date Filing Date Title
SE9900882A SE9900882D0 (sv) 1999-03-12 1999-03-12 A high power IMPATT diode
US09/272,768 US6252250B1 (en) 1999-03-12 1999-03-19 High power impatt diode
AU36890/00A AU3689000A (en) 1999-03-12 2000-03-09 A high power impatt diode
PCT/SE2000/000463 WO2000055921A1 (en) 1999-03-12 2000-03-09 A high power impatt diode

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
SE9900882A SE9900882D0 (sv) 1999-03-12 1999-03-12 A high power IMPATT diode
US09/272,768 US6252250B1 (en) 1999-03-12 1999-03-19 High power impatt diode

Publications (1)

Publication Number Publication Date
SE9900882D0 true SE9900882D0 (sv) 1999-03-12

Family

ID=26663530

Family Applications (1)

Application Number Title Priority Date Filing Date
SE9900882A SE9900882D0 (sv) 1999-03-12 1999-03-12 A high power IMPATT diode

Country Status (4)

Country Link
US (1) US6252250B1 (sv)
AU (1) AU3689000A (sv)
SE (1) SE9900882D0 (sv)
WO (1) WO2000055921A1 (sv)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101165860B (zh) * 2003-08-22 2010-04-07 关西电力株式会社 半导体装置及制造方法、使用该半导体装置的电力变换装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4822374B1 (sv) * 1968-10-17 1973-07-05
US3890630A (en) 1973-10-09 1975-06-17 Rca Corp Impatt diode
CA1015069A (en) 1974-04-01 1977-08-02 Chung K. Kim Dynamic negative resistance diode
US4201604A (en) 1975-08-13 1980-05-06 Raytheon Company Process for making a negative resistance diode utilizing spike doping
US4060820A (en) 1976-01-05 1977-11-29 Raytheon Company Low noise read-type diode
US4466938A (en) * 1979-08-23 1984-08-21 General Electric Company Method for reducing damage to diamond crystals during sintering
US4596070A (en) 1984-07-13 1986-06-24 Texas Instruments Incorporated Interdigitated IMPATT devices
US5512776A (en) * 1984-07-13 1996-04-30 Texas Instruments Incorporated Interdigitated IMPATT devices
DE3915053C2 (de) 1989-05-08 1995-03-30 Siemens Ag Verfahren zum Herstellen von einkristallinem Siliziumkarbid SiC
US5612260A (en) * 1992-06-05 1997-03-18 Cree Research, Inc. Method of obtaining high quality silicon dioxide passivation on silicon carbide and resulting passivated structures

Also Published As

Publication number Publication date
AU3689000A (en) 2000-10-04
US6252250B1 (en) 2001-06-26
WO2000055921A1 (en) 2000-09-21

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