JP4699353B2 - 代替のflmpパッケージ設計およびそのパッケージ製造方法 - Google Patents
代替のflmpパッケージ設計およびそのパッケージ製造方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 239000004065 semiconductor Substances 0.000 claims description 55
- 238000000034 method Methods 0.000 claims description 54
- 239000000463 material Substances 0.000 claims description 30
- 239000012778 molding material Substances 0.000 claims description 30
- 229910000679 solder Inorganic materials 0.000 claims description 26
- 238000000465 moulding Methods 0.000 claims description 14
- 238000002844 melting Methods 0.000 claims description 6
- 230000008018 melting Effects 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 239000010949 copper Substances 0.000 claims description 5
- 239000003822 epoxy resin Substances 0.000 claims description 2
- 229920000647 polyepoxide Polymers 0.000 claims description 2
- 238000012360 testing method Methods 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000005520 cutting process Methods 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 230000035882 stress Effects 0.000 description 4
- 230000017525 heat dissipation Effects 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 239000006096 absorbing agent Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000002470 thermal conductor Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
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Description
Claims (19)
- 半導体パッケージの製造方法であって、
(a)チップ接着領域と複数のリードを有するリードフレーム構造の周囲にモールド材をモールドして、前記チップ接着領域を前記モールド材の第1の窓を通して露出せしめかつ前記チップ接着領域とは反対側の前記リードフレーム構造の表面を前記モールド材の第2の窓を通して露出せしめるモールド工程と、
(b)前記工程(a)の後、フリップチップ実装プロセスを使用して前記チップ接着領域に半導体チップを実装する実装工程と、
を含むことを特徴とする方法。 - 前記半導体チップは縦型パワーMOSFETを含むことを特徴とする請求項1に記載の方法。
- 前記複数のリードは、少なくとも1つのソースリードおよび少なくとも1つのゲートリードを含むことを特徴とする請求項1に記載の方法。
- 前記工程(b)の後に、前記リードフレームのチップ接着領域と前記半導体チップとの間にあるはんだを溶融させる工程をさらに含むことを特徴とする請求項1に記載の方法。
- 前記チップ接着領域は、少なくとも1つの開口部を含むことを特徴とする請求項1に記載の方法。
- 前記モールド工程は、リードフレーム構造を金型内に配置する工程を含むことを特徴とする請求項1に記載の方法。
- 前記リードフレーム構造のチップ接着領域と前記窓内部にはんだを付着させる工程をさらに含むことを特徴とする請求項1に記載の方法。
- 前記複数のリードはソースリードおよびゲートリードを含むことを特徴とする請求項1に記載の方法。
- ヒートプレート構造を前記リードフレーム構造に接着する工程をさらに含むことを特徴とする請求項1に記載の方法。
- 半導体パッケージであって、
(a)チップ接着領域及び複数のリードを含むリードフレーム構造と、
(b)前記リードフレーム構造の少なくとも一部分の周囲にモールドされ第1の窓及び第2の窓を有するモールド材と、
(c)前記チップ接着領域上に実装され縁部を有する半導体チップと、
を含み、
前記第1の窓は前記チップ接着領域を露出しかつ前記第2の窓は前記チップ接着領域とは反対側の前記リードフレーム構造の表面を露出し、前記半導体チップは前記第1の窓内部にあり、前記半導体チップの前記縁部と前記モールド材との間に間隙が存在していることを特徴とする半導体パッケージ。 - 前記リードフレーム構造は銅からなることを特徴とする請求項10に記載の半導体パッケージ。
- 前記半導体チップは、ソース領域、ゲート領域およびドレイン領域を有する縦型パワートランジスタを含み、前記ソース領域と前記ゲート領域は前記チップ接着領域に対して近接位置にあり、前記ドレイン領域は前記チップ接着領域に対して遠方位置にあることを特徴とする請求項10に記載の半導体パッケージ。
- 前記半導体パッケージは、前記半導体チップと前記リードフレーム構造との間にバンプおよびはんだ接合部を含むことを特徴とする請求項10に記載の半導体パッケージ。
- 前記窓は、前記半導体チップの横寸法よりも大きい寸法を有することを特徴とする請求項10に記載の半導体パッケージ。
- 前記モールド材は、エポキシ樹脂モールド材料を含むことを特徴とする請求項10に記載の半導体パッケージ。
- 前記第2の窓を通して前記リードフレーム構造に接着しているヒートシンクをさらに含むことを特徴とする請求項10に記載の半導体パッケージ。
- 前記半導体チップと前記リードフレーム構造とを接着させる接合アレイをさらに含み、前記接合アレイは、互いに異なる融解温度を有するはんだまたは無はんだのバンプ材料とはんだペースト材料とを含むことを特徴とする請求項10に記載の半導体パッケージ。
- 半導体パッケージを含む電気アッセンブリ装置であって、
半導体パッケージと、前記半導体パッケージが実装される回路基板と、を含み、
前記半導体パッケージは、
(a)チップ接着領域及び複数のリードを含むリードフレーム構造と、
(b)前記リードフレーム構造の少なくとも一部分の周囲にモールドされ第1の窓及び第2の窓を有するモールド材と、
(c)前記チップ接着領域上に実装され縁部を有する半導体チップと、
からなり、前記第1の窓は前記チップ接着領域を露出しかつ前記第2の窓は前記チップ接着領域とは反対側の前記リードフレーム構造の表面を露出し、前記半導体チップは前記第1の窓内部にあり、前記縁部と前記モールド材との間には間隙が存在する、ことを特徴とする電気アッセンブリ装置。 - 前記半導体チップを接着させるはんだをさらに含むことを特徴とする請求項18に記載の電気アッセンブリ装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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US44691803P | 2003-02-11 | 2003-02-11 | |
US60/446,918 | 2003-02-11 | ||
PCT/US2004/003633 WO2004073031A2 (en) | 2003-02-11 | 2004-02-09 | Alternative flip chip in leaded molded package design and method for manufacture |
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JP2006517744A JP2006517744A (ja) | 2006-07-27 |
JP4699353B2 true JP4699353B2 (ja) | 2011-06-08 |
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JP2006503414A Expired - Fee Related JP4699353B2 (ja) | 2003-02-11 | 2004-02-09 | 代替のflmpパッケージ設計およびそのパッケージ製造方法 |
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US (2) | US7217594B2 (ja) |
JP (1) | JP4699353B2 (ja) |
KR (1) | KR101050721B1 (ja) |
CN (1) | CN100576523C (ja) |
DE (1) | DE112004000258T5 (ja) |
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Also Published As
Publication number | Publication date |
---|---|
US20070241431A1 (en) | 2007-10-18 |
US20040157372A1 (en) | 2004-08-12 |
US7217594B2 (en) | 2007-05-15 |
TW200425438A (en) | 2004-11-16 |
US7586178B2 (en) | 2009-09-08 |
DE112004000258T5 (de) | 2006-02-02 |
CN100576523C (zh) | 2009-12-30 |
CN1748307A (zh) | 2006-03-15 |
WO2004073031A2 (en) | 2004-08-26 |
JP2006517744A (ja) | 2006-07-27 |
KR20050102638A (ko) | 2005-10-26 |
KR101050721B1 (ko) | 2011-07-20 |
WO2004073031A3 (en) | 2005-03-31 |
TWI242857B (en) | 2005-11-01 |
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