JP4607594B2 - 構造化シリコンアノード - Google Patents
構造化シリコンアノード Download PDFInfo
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- JP4607594B2 JP4607594B2 JP2004549349A JP2004549349A JP4607594B2 JP 4607594 B2 JP4607594 B2 JP 4607594B2 JP 2004549349 A JP2004549349 A JP 2004549349A JP 2004549349 A JP2004549349 A JP 2004549349A JP 4607594 B2 JP4607594 B2 JP 4607594B2
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- silicon
- electrode
- lithium
- substrate
- pillar
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M10/00—Secondary cells; Manufacture thereof
- H01M10/05—Accumulators with non-aqueous electrolyte
- H01M10/052—Li-accumulators
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/13—Electrodes for accumulators with non-aqueous electrolyte, e.g. for lithium-accumulators; Processes of manufacture thereof
- H01M4/134—Electrodes based on metals, Si or alloys
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/13—Electrodes for accumulators with non-aqueous electrolyte, e.g. for lithium-accumulators; Processes of manufacture thereof
- H01M4/139—Processes of manufacture
- H01M4/1395—Processes of manufacture of electrodes based on metals, Si or alloys
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/36—Selection of substances as active materials, active masses, active liquids
- H01M4/38—Selection of substances as active materials, active masses, active liquids of elements or alloys
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/36—Selection of substances as active materials, active masses, active liquids
- H01M4/38—Selection of substances as active materials, active masses, active liquids of elements or alloys
- H01M4/386—Silicon or alloys based on silicon
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/64—Carriers or collectors
- H01M4/66—Selection of materials
- H01M4/661—Metal or alloys, e.g. alloy coatings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M2004/026—Electrodes composed of, or comprising, active material characterised by the polarity
- H01M2004/027—Negative electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/04—Processes of manufacture in general
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/10—Energy storage using batteries
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/90—Bulk effect device making
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/701—Integrated with dissimilar structures on a common substrate
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/81—Of specified metal or metal alloy composition
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/902—Specified use of nanostructure
- Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/902—Specified use of nanostructure
- Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
- Y10S977/948—Energy storage/generating using nanostructure, e.g. fuel cell, battery
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49108—Electric battery cell making
Description
(Li(ads)は、ZPC上に吸着されたLi、Vは、ZPC中のLi0空孔)。
1. (a): R.A. Sharma and R.N. Seefurth, J. Electrochem. Soc., 123, 1763 (1976); (b): B.A. Boukamp, G.C. Lash and R.A. Huggins, J. Electrochem. Soc., 128, 725 (1981); (c):R.A. Huggins, Lithium Alloy Anodes in "Handbook of Battery Materials", J.O. Besenhard Ed, Wiley-VCH, Weinheim, 359(1999); (d): S. Bourderau, T. Brousse and D.M. Schleich, J. Power Sources, 233, 81 (1999); (e):O.Z. Zhuo, Bo Bao and S. Sinha, US Patent No. 6334939 B1 Jan 1, 2002:Liアノード用に種々のホスト材料を使用することに関する多くの他の特許がある。
3. J.O. Besenhard, J. Yang and M. Winter, J. Power Sources, 68, 87 (1997)
4. L.Y. Beaulieu, D. Larcher, R.A. Dunlap and J.R. Dahn, 0. Electrochem. Soc., 147, 3206 (2000)
5. J.K. Niparko (Editor), "Cochlea Implants", Pub., Lippincott Williams and Wilkins, Philadelphia, (2000)
6. C.J. Men and R.A. Huggins, J. Solid State Chem., 37, 271 (1981)
7. W.J. Weydanz, M. Wohlfahrt-Mehrens and R.A. Huggins, J. Power Sources 81-82, 237 (1999).
8. J-P. Colinge, "Silicon-on-Insulator Technology: Materials to VLSI" Kluwer Acad. Pub, Boston, Chapter 2, (1991).
9. Mino Green, M. Garcia-Parajo, F. Khaleque and: R Murray, Appl. Phys. Lett., 63, 264 (1993.)
10. Wino Green and Shin Tsuchiya, J. Vac. Sci. & Tech. B, 17, 2074 (1999)
11. Shin Tsuchiya, Wino Green and RRA Syms, Electrochem. Solid-State Lett, 3, 44 (2000)
12. L-C. Chen, M. Chen, T-H Tsaur, C Lien and C-C. Wan, Sensors and Actuators, A49, 115 (1995)
13. H. Li, X. Huang, L. Chen, G. Zhou, Z. Zhang, D. Yu, Y.J. Mo and N. Pei, Solid State Ionics, 135, 181 (2000)
14. "Properties of Silicon", Pub. INSPEC, The Institution of Electrical Engineers, London, (1988): p.461 for solubility; p.455 for diffusion data.
15. B.E. Deal and A.S. Grove, J. Appl. Phys., 36, 3770 (1965)
16. L.Y. Beaulieu, K.W. Eberman, R.L. Turner, L.J Krause and J.R. Dahn, Electrochem. Solid-State Lett., 4, A137 (2001).
Claims (6)
- n型シリコンを含む基板に形成されたサブミクロン直径のシリコンピラーの島アレーを含み、前記サブミクロン直径のシリコンピラーの島アレーによる前記基板のフラクショナル表面被覆率が0.5を超えない、リチウム電池用シリコン電極。
- ウエハ貼り合せシリコンオンインシュレータ基板上に作られた請求項1に記載のリチウム電池用シリコン電極。
- (a)水に可溶な固体のフィルムを親水性シリコン基板上に堆積させ、
(b)前記フィルムを、前記フィルムが前記基板上で分離した半球状の島のアレーに再組織化されるように、溶媒蒸気に曝し、
(c)露出したシリコンがエッチング除去されて前記島に対応するピラーを残すように、レジストして機能する前記水に可溶な固体の島をマスクとして、前記シリコン基板を反応性イオンエッチングする
工程を含む、請求項1ないし2のいずれか1項に記載のリチウム電池用シリコン電極の形成方法。 - ピラーが、直径が0.1〜1.0ミクロンで、高さが1〜10ミクロンである請求項1ないし3のいずれか1項に記載のリチウム電池用シリコン電極。
- ピラーが、直径が0.3ミクロンで、高さが6ミクロンである請求項4に記載のリチウム電池用シリコン電極。
- 請求項1〜5いずれか1項記載のリチウム電池用シリコン電極を備えたリチウム電池。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB0225779A GB2395059B (en) | 2002-11-05 | 2002-11-05 | Structured silicon anode |
PCT/GB2003/004783 WO2004042851A2 (en) | 2002-11-05 | 2003-11-05 | Structured silicon anode |
Related Child Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009200060A Division JP4723665B2 (ja) | 2002-11-05 | 2009-08-31 | 構造化シリコンアノード |
JP2010000264A Division JP5603084B2 (ja) | 2002-11-05 | 2010-01-04 | 構造化シリコンアノード |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2006505901A JP2006505901A (ja) | 2006-02-16 |
JP2006505901A5 JP2006505901A5 (ja) | 2009-10-15 |
JP4607594B2 true JP4607594B2 (ja) | 2011-01-05 |
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ID=9947238
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
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JP2004549349A Expired - Fee Related JP4607594B2 (ja) | 2002-11-05 | 2003-11-05 | 構造化シリコンアノード |
JP2009200060A Expired - Lifetime JP4723665B2 (ja) | 2002-11-05 | 2009-08-31 | 構造化シリコンアノード |
JP2010000264A Expired - Fee Related JP5603084B2 (ja) | 2002-11-05 | 2010-01-04 | 構造化シリコンアノード |
Family Applications After (2)
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JP2009200060A Expired - Lifetime JP4723665B2 (ja) | 2002-11-05 | 2009-08-31 | 構造化シリコンアノード |
JP2010000264A Expired - Fee Related JP5603084B2 (ja) | 2002-11-05 | 2010-01-04 | 構造化シリコンアノード |
Country Status (12)
Country | Link |
---|---|
US (5) | US7402829B2 (ja) |
EP (2) | EP1576680B1 (ja) |
JP (3) | JP4607594B2 (ja) |
KR (1) | KR100785695B1 (ja) |
CN (1) | CN100399606C (ja) |
AU (1) | AU2003276468A1 (ja) |
CA (1) | CA2504634C (ja) |
GB (1) | GB2395059B (ja) |
HK (1) | HK1086669A1 (ja) |
IL (1) | IL168377A (ja) |
RU (1) | RU2325008C2 (ja) |
WO (1) | WO2004042851A2 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010135332A (ja) * | 2002-11-05 | 2010-06-17 | Nexeon Ltd | 構造化シリコンアノード |
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JP2010135332A (ja) * | 2002-11-05 | 2010-06-17 | Nexeon Ltd | 構造化シリコンアノード |
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