GB980513A - Improvements relating to the use of silicon in semi-conductor devices - Google Patents

Improvements relating to the use of silicon in semi-conductor devices

Info

Publication number
GB980513A
GB980513A GB4126661A GB4126661A GB980513A GB 980513 A GB980513 A GB 980513A GB 4126661 A GB4126661 A GB 4126661A GB 4126661 A GB4126661 A GB 4126661A GB 980513 A GB980513 A GB 980513A
Authority
GB
United Kingdom
Prior art keywords
solution
etching
volumes
silicon
semi
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4126661A
Inventor
Richard Magner
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Licentia Patent Verwaltungs GmbH
Original Assignee
Licentia Patent Verwaltungs GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Licentia Patent Verwaltungs GmbH filed Critical Licentia Patent Verwaltungs GmbH
Priority to GB4126661A priority Critical patent/GB980513A/en
Publication of GB980513A publication Critical patent/GB980513A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching

Abstract

980,513. Semi-conductor devices. LICENTIA PATENT - VERWALTUNGS - G.m.b.H. Nov. 17, 1961, No. 41266/61. Heading H1K. A silicon body to which material is subsequently alloyed to form a PN junction is prepared by etching in a solution containing nitric and hydrofluoric acids, to which before or during etching, alkali or alkaline earth metal ions are added. In a typical process silicon discs are etched to within 40Á of the required thickness in a solution of 2-4 volumes nitric, 4-2 volumes hydrofluoric and 6 volumes acetic acid of specified concentration and rinsed in deionized water. After etching to the desired thickness in a fresh solution of the acids a 10% by weight solution of an alkali or alkaline earth salt is added to form between 2 and 10% of the solution and etching continued for two minutes while the solution is agitated. The discs are then rinsed in deionized water and stored in alcohol until the alloying process. Suitable salt solutions are the chlorides, nitrates or carbonates of magnesium, calcium, barium and strontium. The method is said to be particularly suited to the production of rectifiers, transistors and photo-cells.
GB4126661A 1961-11-17 1961-11-17 Improvements relating to the use of silicon in semi-conductor devices Expired GB980513A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB4126661A GB980513A (en) 1961-11-17 1961-11-17 Improvements relating to the use of silicon in semi-conductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB4126661A GB980513A (en) 1961-11-17 1961-11-17 Improvements relating to the use of silicon in semi-conductor devices

Publications (1)

Publication Number Publication Date
GB980513A true GB980513A (en) 1965-01-13

Family

ID=10418904

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4126661A Expired GB980513A (en) 1961-11-17 1961-11-17 Improvements relating to the use of silicon in semi-conductor devices

Country Status (1)

Country Link
GB (1) GB980513A (en)

Cited By (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2022335A1 (en) * 1968-10-31 1970-07-31 Gen Electric
FR2176664A1 (en) * 1972-03-23 1973-11-02 Siemens Ag
GB2464158A (en) * 2008-10-10 2010-04-14 Nexion Ltd A method of fabricating structured particles composed of silicon or a silicon base material and their use in lithium rechargeable batteries
US8101298B2 (en) 2006-01-23 2012-01-24 Nexeon Ltd. Method of fabricating fibres composed of silicon or a silicon-based material and their use in lithium rechargeable batteries
US8384058B2 (en) 2002-11-05 2013-02-26 Nexeon Ltd. Structured silicon anode
US8585918B2 (en) 2006-01-23 2013-11-19 Nexeon Ltd. Method of etching a silicon-based material
US8642211B2 (en) 2007-07-17 2014-02-04 Nexeon Limited Electrode including silicon-comprising fibres and electrochemical cells including the same
US8870975B2 (en) 2007-07-17 2014-10-28 Nexeon Ltd. Method of fabricating structured particles composed of silicon or a silicon-based material and their use in lithium rechargeable batteries
US8932759B2 (en) 2008-10-10 2015-01-13 Nexeon Ltd. Method of fabricating structured particles composed of silicon or a silicon-based material
US9012079B2 (en) 2007-07-17 2015-04-21 Nexeon Ltd Electrode comprising structured silicon-based material
US9252426B2 (en) 2007-05-11 2016-02-02 Nexeon Limited Silicon anode for a rechargeable battery
US9548489B2 (en) 2012-01-30 2017-01-17 Nexeon Ltd. Composition of SI/C electro active material
US9553304B2 (en) 2009-05-07 2017-01-24 Nexeon Limited Method of making silicon anode material for rechargeable cells
US9608272B2 (en) 2009-05-11 2017-03-28 Nexeon Limited Composition for a secondary battery cell
US9647263B2 (en) 2010-09-03 2017-05-09 Nexeon Limited Electroactive material
US9853292B2 (en) 2009-05-11 2017-12-26 Nexeon Limited Electrode composition for a secondary battery cell
US9871248B2 (en) 2010-09-03 2018-01-16 Nexeon Limited Porous electroactive material
US10008716B2 (en) 2012-11-02 2018-06-26 Nexeon Limited Device and method of forming a device
US10077506B2 (en) 2011-06-24 2018-09-18 Nexeon Limited Structured particles
US10090513B2 (en) 2012-06-01 2018-10-02 Nexeon Limited Method of forming silicon
US10103379B2 (en) 2012-02-28 2018-10-16 Nexeon Limited Structured silicon particles
US10396355B2 (en) 2014-04-09 2019-08-27 Nexeon Ltd. Negative electrode active material for secondary battery and method for manufacturing same
US10476072B2 (en) 2014-12-12 2019-11-12 Nexeon Limited Electrodes for metal-ion batteries
US10586976B2 (en) 2014-04-22 2020-03-10 Nexeon Ltd Negative electrode active material and lithium secondary battery comprising same

Cited By (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2022335A1 (en) * 1968-10-31 1970-07-31 Gen Electric
FR2176664A1 (en) * 1972-03-23 1973-11-02 Siemens Ag
US8384058B2 (en) 2002-11-05 2013-02-26 Nexeon Ltd. Structured silicon anode
US8101298B2 (en) 2006-01-23 2012-01-24 Nexeon Ltd. Method of fabricating fibres composed of silicon or a silicon-based material and their use in lithium rechargeable batteries
US8585918B2 (en) 2006-01-23 2013-11-19 Nexeon Ltd. Method of etching a silicon-based material
US9252426B2 (en) 2007-05-11 2016-02-02 Nexeon Limited Silicon anode for a rechargeable battery
US9871249B2 (en) 2007-05-11 2018-01-16 Nexeon Limited Silicon anode for a rechargeable battery
US8870975B2 (en) 2007-07-17 2014-10-28 Nexeon Ltd. Method of fabricating structured particles composed of silicon or a silicon-based material and their use in lithium rechargeable batteries
US9871244B2 (en) 2007-07-17 2018-01-16 Nexeon Limited Method of fabricating structured particles composed of silicon or a silicon-based material and their use in lithium rechargeable batteries
US8940437B2 (en) 2007-07-17 2015-01-27 Nexeon Limited Method of fabricating structured particles composed of silicon or a silicon-based material and their use in lithium rechargeable batteries
US9012079B2 (en) 2007-07-17 2015-04-21 Nexeon Ltd Electrode comprising structured silicon-based material
US8642211B2 (en) 2007-07-17 2014-02-04 Nexeon Limited Electrode including silicon-comprising fibres and electrochemical cells including the same
US8932759B2 (en) 2008-10-10 2015-01-13 Nexeon Ltd. Method of fabricating structured particles composed of silicon or a silicon-based material
US9184438B2 (en) 2008-10-10 2015-11-10 Nexeon Ltd. Method of fabricating structured particles composed of silicon or a silicon-based material and their use in lithium rechargeable batteries
GB2464158B (en) * 2008-10-10 2011-04-20 Nexeon Ltd A method of fabricating structured particles composed of silicon or a silicon-based material and their use in lithium rechargeable batteries
GB2464158A (en) * 2008-10-10 2010-04-14 Nexion Ltd A method of fabricating structured particles composed of silicon or a silicon base material and their use in lithium rechargeable batteries
US9553304B2 (en) 2009-05-07 2017-01-24 Nexeon Limited Method of making silicon anode material for rechargeable cells
US9608272B2 (en) 2009-05-11 2017-03-28 Nexeon Limited Composition for a secondary battery cell
US10050275B2 (en) 2009-05-11 2018-08-14 Nexeon Limited Binder for lithium ion rechargeable battery cells
US9853292B2 (en) 2009-05-11 2017-12-26 Nexeon Limited Electrode composition for a secondary battery cell
US9647263B2 (en) 2010-09-03 2017-05-09 Nexeon Limited Electroactive material
US9871248B2 (en) 2010-09-03 2018-01-16 Nexeon Limited Porous electroactive material
US9947920B2 (en) 2010-09-03 2018-04-17 Nexeon Limited Electroactive material
US10822713B2 (en) 2011-06-24 2020-11-03 Nexeon Limited Structured particles
US10077506B2 (en) 2011-06-24 2018-09-18 Nexeon Limited Structured particles
US10388948B2 (en) 2012-01-30 2019-08-20 Nexeon Limited Composition of SI/C electro active material
US9548489B2 (en) 2012-01-30 2017-01-17 Nexeon Ltd. Composition of SI/C electro active material
US10103379B2 (en) 2012-02-28 2018-10-16 Nexeon Limited Structured silicon particles
US10090513B2 (en) 2012-06-01 2018-10-02 Nexeon Limited Method of forming silicon
US10008716B2 (en) 2012-11-02 2018-06-26 Nexeon Limited Device and method of forming a device
US10396355B2 (en) 2014-04-09 2019-08-27 Nexeon Ltd. Negative electrode active material for secondary battery and method for manufacturing same
US10693134B2 (en) 2014-04-09 2020-06-23 Nexeon Ltd. Negative electrode active material for secondary battery and method for manufacturing same
US10586976B2 (en) 2014-04-22 2020-03-10 Nexeon Ltd Negative electrode active material and lithium secondary battery comprising same
US10476072B2 (en) 2014-12-12 2019-11-12 Nexeon Limited Electrodes for metal-ion batteries

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