JP4264675B2 - 液晶表示装置とその製造方法 - Google Patents

液晶表示装置とその製造方法 Download PDF

Info

Publication number
JP4264675B2
JP4264675B2 JP28319498A JP28319498A JP4264675B2 JP 4264675 B2 JP4264675 B2 JP 4264675B2 JP 28319498 A JP28319498 A JP 28319498A JP 28319498 A JP28319498 A JP 28319498A JP 4264675 B2 JP4264675 B2 JP 4264675B2
Authority
JP
Japan
Prior art keywords
liquid crystal
region
effective pixel
active element
video signal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP28319498A
Other languages
English (en)
Japanese (ja)
Other versions
JP2000066240A (ja
Inventor
栄 田中
Original Assignee
栄 田中
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=17662362&utm_source=***_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=JP4264675(B2) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by 栄 田中 filed Critical 栄 田中
Priority to JP28319498A priority Critical patent/JP4264675B2/ja
Priority to TW88113987A priority patent/TW536655B/zh
Publication of JP2000066240A publication Critical patent/JP2000066240A/ja
Application granted granted Critical
Publication of JP4264675B2 publication Critical patent/JP4264675B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Landscapes

  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Thin Film Transistor (AREA)
JP28319498A 1998-08-17 1998-08-17 液晶表示装置とその製造方法 Expired - Fee Related JP4264675B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP28319498A JP4264675B2 (ja) 1998-08-17 1998-08-17 液晶表示装置とその製造方法
TW88113987A TW536655B (en) 1998-08-17 1999-08-13 Liquid crystal display device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP28319498A JP4264675B2 (ja) 1998-08-17 1998-08-17 液晶表示装置とその製造方法

Related Child Applications (3)

Application Number Title Priority Date Filing Date
JP2008316238A Division JP4936257B2 (ja) 2008-10-31 2008-10-31 液晶表示装置とその製造方法
JP2008316237A Division JP5019299B2 (ja) 2008-10-31 2008-10-31 低コスト表示装置を製造するためのホトマスク構造
JP2008336052A Division JP2009111412A (ja) 2008-11-28 2008-11-28 薄膜トランジスタ素子と表示装置

Publications (2)

Publication Number Publication Date
JP2000066240A JP2000066240A (ja) 2000-03-03
JP4264675B2 true JP4264675B2 (ja) 2009-05-20

Family

ID=17662362

Family Applications (1)

Application Number Title Priority Date Filing Date
JP28319498A Expired - Fee Related JP4264675B2 (ja) 1998-08-17 1998-08-17 液晶表示装置とその製造方法

Country Status (2)

Country Link
JP (1) JP4264675B2 (zh)
TW (1) TW536655B (zh)

Families Citing this family (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6255130B1 (en) * 1998-11-19 2001-07-03 Samsung Electronics Co., Ltd. Thin film transistor array panel and a method for manufacturing the same
US6287899B1 (en) 1998-12-31 2001-09-11 Samsung Electronics Co., Ltd. Thin film transistor array panels for a liquid crystal display and a method for manufacturing the same
US6759281B1 (en) 1999-04-26 2004-07-06 Samsung Electronics Co., Ltd. Method of making a display switch having a contact hole through a passivation layer and a color filter
US6380559B1 (en) * 1999-06-03 2002-04-30 Samsung Electronics Co., Ltd. Thin film transistor array substrate for a liquid crystal display
JP2001339072A (ja) * 2000-03-15 2001-12-07 Advanced Display Inc 液晶表示装置
JP4393662B2 (ja) 2000-03-17 2010-01-06 株式会社半導体エネルギー研究所 液晶表示装置の作製方法
JP2001311965A (ja) 2000-04-28 2001-11-09 Nec Corp アクティブマトリクス基板及びその製造方法
JP2002026333A (ja) 2000-07-11 2002-01-25 Nec Corp アクティブマトリクス基板の製造方法
JP4582877B2 (ja) * 2000-08-09 2010-11-17 三菱電機株式会社 Tftアレイの製造方法
US7223643B2 (en) * 2000-08-11 2007-05-29 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
JP4565799B2 (ja) 2002-07-01 2010-10-20 大林精工株式会社 横電界方式液晶表示装置、その製造方法、走査露光装置およびミックス走査露光装置
TWI278696B (en) 2002-09-10 2007-04-11 Obayashiseikou Co Ltd Active matrix type vertically aligned mode liquid crystal display and driving method thereof
TW584908B (en) * 2003-04-15 2004-04-21 Hannstar Display Corp Method of manufacturing IPS-LCD by using 4-mask process
KR100980020B1 (ko) * 2003-08-28 2010-09-03 삼성전자주식회사 박막 트랜지스터 표시판과 그 제조 방법
TWI382264B (zh) 2004-07-27 2013-01-11 Samsung Display Co Ltd 薄膜電晶體陣列面板及包括此面板之顯示器裝置
KR101048365B1 (ko) * 2004-09-09 2011-07-11 삼성전자주식회사 트랜지스터와 이를 갖는 표시장치
US7704646B2 (en) * 2004-11-08 2010-04-27 Lg Innotek Co., Ltd. Half tone mask and method for fabricating the same
KR101107246B1 (ko) 2004-12-24 2012-01-25 엘지디스플레이 주식회사 박막 트랜지스터 기판 및 그 제조 방법
KR101107245B1 (ko) 2004-12-24 2012-01-25 엘지디스플레이 주식회사 수평 전계 박막 트랜지스터 기판 및 그 제조 방법
CN100449384C (zh) * 2005-08-03 2009-01-07 友达光电股份有限公司 液晶显示装置基板的制造方法
JP5100997B2 (ja) * 2005-10-18 2012-12-19 三菱電機株式会社 薄膜トランジスタ基板の製造方法
JP2007178649A (ja) * 2005-12-27 2007-07-12 Dainippon Printing Co Ltd 階調マスク
JP2007310334A (ja) 2006-05-19 2007-11-29 Mikuni Denshi Kk ハーフトーン露光法を用いた液晶表示装置の製造法
JP5673718B2 (ja) * 2006-07-21 2015-02-18 大日本印刷株式会社 階調マスク
JP5228390B2 (ja) * 2006-07-21 2013-07-03 大日本印刷株式会社 階調マスク
JP5458486B2 (ja) * 2006-11-22 2014-04-02 三菱電機株式会社 アレイ基板、表示装置、及びその製造方法
US9645457B2 (en) 2006-11-22 2017-05-09 Mitsubishi Electric Corporation Array substrate, display device, and method for manufacturing the array substrate
JP5266645B2 (ja) * 2007-01-31 2013-08-21 三菱電機株式会社 薄膜トランジスタと該薄膜トランジスタを用いた表示装置
CN101382728B (zh) * 2007-09-07 2010-07-28 北京京东方光电科技有限公司 灰阶掩膜版结构
CN101387825B (zh) * 2007-09-10 2011-04-06 北京京东方光电科技有限公司 补偿型灰阶掩膜版结构
JP4898749B2 (ja) * 2008-08-04 2012-03-21 大林精工株式会社 走査露光装置および横電界方式液晶表示装置
EP2327069A4 (en) 2008-09-12 2013-03-20 Semiconductor Energy Lab DISPLAY DEVICE
EP2327070B1 (en) 2008-09-19 2018-10-17 Semiconductor Energy Laboratory Co, Ltd. Display device
KR101803720B1 (ko) * 2008-10-03 2017-12-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
JP2010049288A (ja) * 2009-12-02 2010-03-04 Semiconductor Energy Lab Co Ltd 液晶表示装置
CN102655175B (zh) * 2012-04-06 2014-07-02 京东方科技集团股份有限公司 Tft、阵列基板及显示装置、制备该tft的掩模板
JP5668745B2 (ja) * 2012-11-30 2015-02-12 大日本印刷株式会社 階調マスク
CN104155842A (zh) 2014-07-18 2014-11-19 京东方科技集团股份有限公司 一种掩模板
TWI629622B (zh) * 2017-04-17 2018-07-11 承洺股份有限公司 顯示器光學膜貼合應用技術

Also Published As

Publication number Publication date
TW536655B (en) 2003-06-11
JP2000066240A (ja) 2000-03-03

Similar Documents

Publication Publication Date Title
JP4264675B2 (ja) 液晶表示装置とその製造方法
US7130003B2 (en) Thin film transistor array substrate for a liquid crystal display and the method for fabricating the same
JP3811663B2 (ja) 面内スイッチング液晶ディスプレイアレイの製造方法およびその構造
EP0338766B1 (en) Method of fabricating an active matrix substrate
KR100391157B1 (ko) 액정 표시 장치용 어레이 기판 및 그의 제조 방법
JPH11149091A (ja) 横方向電界方式アクティブマトリクス型液晶表示装置およびその製造方法
KR20070111975A (ko) 하프톤 노광법을 사용한 액정표시장치의 제조법
JPS62229873A (ja) 薄膜半導体装置の製造方法
US20120100676A1 (en) Thin Film Transistor Substrate of Horizontal Electric Field Type Liquid Crystal Display Device and Fabricating Method Thereof
JP5019299B2 (ja) 低コスト表示装置を製造するためのホトマスク構造
JP2000305113A (ja) 液晶表示装置とその製造方法
JP3235540B2 (ja) 液晶表示装置用薄膜トランジスタアレイおよびその製造方法
JPH08136951A (ja) 液晶パネル用基板とその製造方法
JP4936257B2 (ja) 液晶表示装置とその製造方法
US7952670B2 (en) Liquid crystal display comprising a semiconductor layer integrally formed and including a crossover portion, a TFT portion, and a connection portion and manufacturing method for the same
JP2009111412A (ja) 薄膜トランジスタ素子と表示装置
JP2004013003A (ja) 液晶表示装置
JPH09127497A (ja) 液晶表示装置およびその製造方法
JPH07175088A (ja) 液晶パネル用基板とその製造方法
US20020085142A1 (en) Liquid crystal display device and method of manufacturing the same
JPH1039331A (ja) アクティブマトリクス方式液晶表示装置の製造方法及びその方法によって製造されるアクティブマトリクス方式液晶表示装置
KR100205867B1 (ko) 액티브매트릭스기판의 제조방법 및 그 방법에 의해제조되는액티브매트릭스기판
US6876405B1 (en) Method for manufacturing a liquid crystal display with a novel structure of thin film transistor substrate
JPH08262491A (ja) 液晶表示素子およびその製造方法
KR20020056111A (ko) 액정 표시 장치용 어레이 기판 및 그의 제조 방법

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20050806

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20080930

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20081029

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20090120

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20090203

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20150227

Year of fee payment: 6

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20150227

Year of fee payment: 6

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20150227

Year of fee payment: 6

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees
S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313113

S531 Written request for registration of change of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313531

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350