JP4037423B2 - 発光素子実装用ホーロー基板の製造方法 - Google Patents
発光素子実装用ホーロー基板の製造方法 Download PDFInfo
- Publication number
- JP4037423B2 JP4037423B2 JP2005167499A JP2005167499A JP4037423B2 JP 4037423 B2 JP4037423 B2 JP 4037423B2 JP 2005167499 A JP2005167499 A JP 2005167499A JP 2005167499 A JP2005167499 A JP 2005167499A JP 4037423 B2 JP4037423 B2 JP 4037423B2
- Authority
- JP
- Japan
- Prior art keywords
- emitting element
- light emitting
- electrode
- substrate
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000758 substrate Substances 0.000 title claims description 65
- 210000003298 dental enamel Anatomy 0.000 title claims description 28
- 238000000034 method Methods 0.000 title claims description 27
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 229910052751 metal Inorganic materials 0.000 claims description 26
- 239000002184 metal Substances 0.000 claims description 26
- 238000005245 sintering Methods 0.000 claims description 14
- 238000007649 pad printing Methods 0.000 claims description 11
- 238000007639 printing Methods 0.000 claims description 11
- 238000009499 grossing Methods 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 7
- 239000007769 metal material Substances 0.000 claims 1
- 230000017525 heat dissipation Effects 0.000 description 15
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 12
- 229910052709 silver Inorganic materials 0.000 description 12
- 239000004332 silver Substances 0.000 description 12
- 239000011521 glass Substances 0.000 description 11
- 229920005989 resin Polymers 0.000 description 11
- 239000011347 resin Substances 0.000 description 11
- 238000007789 sealing Methods 0.000 description 7
- 238000001035 drying Methods 0.000 description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 6
- 238000012545 processing Methods 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 239000000843 powder Substances 0.000 description 5
- 238000003825 pressing Methods 0.000 description 5
- 229910001209 Low-carbon steel Inorganic materials 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 238000011156 evaluation Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- -1 nitride compound Chemical class 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000007603 infrared drying Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 230000007257 malfunction Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000004570 mortar (masonry) Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 229920001187 thermosetting polymer Polymers 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000013013 elastic material Substances 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000002223 garnet Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000011265 semifinished product Substances 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133602—Direct backlight
- G02F1/133603—Direct backlight with LEDs
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133602—Direct backlight
- G02F1/133608—Direct backlight including particular frames or supporting means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/05—Insulated conductive substrates, e.g. insulated metal substrate
- H05K1/053—Insulated conductive substrates, e.g. insulated metal substrate the metal substrate being covered by an inorganic insulating layer
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/18—Printed circuits structurally associated with non-printed electric components
- H05K1/182—Printed circuits structurally associated with non-printed electric components associated with components mounted in the printed circuit board, e.g. insert mounted components [IMC]
- H05K1/183—Components mounted in and supported by recessed areas of the printed circuit board
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S362/00—Illumination
- Y10S362/80—Light emitting diode
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Optics & Photonics (AREA)
- General Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Led Device Packages (AREA)
- Liquid Crystal (AREA)
- Led Devices (AREA)
- Non-Portable Lighting Devices Or Systems Thereof (AREA)
Description
本発明の発光素子実装用ホーロー基板の製造方法において、電極を焼結した後に、反射カップ部内の電極の形状を整える平滑化工程を加えることにより、より良好な放熱性、反射カップ部の平坦性、放出される光量を得ることができる。
本発明の発光素子モジュールは、前述した本発明に係る発光素子実装用ホーロー基板に発光素子を実装してなるものなので、基板の放熱性が良く、光量の多い発光素子モジュールを提供することができる。
まず、コア金属作製用の金属板を用意し、これを所望形状に切り出し、さらに機械加工を施して、発光素子実装位置となる反射カップ部7を所望の個数形成し、コア金属4を作製する。
厚さ1.5mmの低炭素鋼の条材を10×10mmのサイズに裁断し、ドリルや金属プレス加工により、深さ0.6mm、底部直径2.0mm、傾斜角度45度とした反射カップ部を形成してコア金属を作製した。
次に、反射カップ部を形成したコア金属の表面にガラス粉末を焼結し、厚さ50μmのホーロー層を形成してホーロー基板を作製した。
次に、導電ペーストとして銀ペーストを用い、前記ホーロー基板の表面に、パッド印刷により電極パターンを印刷した。なお、電極の作製方法は、特開平8−295005号公報に開示されている方法を用いて行った。
発光素子の実装に必要なエリアを、反射カップ部底面の中央の位置で500μm角とし、そのエリア内の高さの最大値−最小値を記録した。10μm以内が目標値であり、その値で良否を判定した。
つまり、
〜5μm:外観上不良。
5μm〜50μm:電極焼結後の平滑化を行わなくても十分な平坦度が得られる。
50μm〜100μm:電極焼結後の平坦化を行うことで、十分な平坦度が得られる。
100μm以上:十分な平坦度が得られない。
電極を形成したホーロー基板に青色発光素子(Cree社製、商品名XB900)を銀ペーストにより基板の電極にダイボンドし、さらに、対向する電極に金線を用いて接合した。その後、その上部が表面張力で十分盛り上がるまで封止樹脂(熱硬化性のエポキシ樹脂)を反射カップ部内に入れた。
最初に一定温度の状態に上記発光素子モジュールを放置し、低い電流値(10mA)で1秒後の電圧値を測定した。ここで、低い電流値とした理由は、高い電流を通電することにより、素子自体が発熱してしまうため、雰囲気温度と素子自体の温度が加算されてしまうためである。電圧値と温度の関係をグラフ化する。
雰囲気温度を室温(25℃)とし、そのとき350mAの電流を1時間通電し、その後10mAまで電流値を落とし、そのときの電圧値を読み取った。
前記の電圧値と温度の関係から電圧値を温度に換算した結果を発光素子の温度(A)とし、さらに、基板の裏面の温度(B)を熱電対により同時に測定した。
熱抵抗値は、発光素子と基板裏面の温度差(A−B)を、投入した電力(電流×電圧)で割ることにより求めた。
導電ペーストとして銅ペーストを用い、前記試験1と同様に、反射カップ部を持つホーロー基板を作製した。具体的には、1.5mm厚の低炭素鋼の条材を10×10mmのサイズに裁断し、深さ0.6mm、底部直径2.1mm、スロープ部の角度45度とした反射カップ部の成型を行い、金属板の表面をガラスで50μm厚で被覆した。次に、導電ペーストとして銅ペーストで電極をパッド印刷により形成し、その後、乾燥させた。
〜5μm:外観上不良。
5μm〜50μm:電極焼結後の平滑化を行わなくても十分な平坦度が得られる。
50μm〜100μm:電極焼結後の平坦化を行うことで、十分な平坦度が得られる。
100μm以上:十分な平坦度が得られない。
となることが分かった。
封止樹脂は熱硬化性、紫外線硬化性のエポキシ樹脂でも、シリコーン樹脂などでもよい。
本発明で用いる発光素子は、窒化化合物半導体のような青色発光素子、緑色発光素子でも良く、GaPに代表されるような赤色、赤外発光素子でもよい。
また、窒化化合物半導体のような青色発光素子を実装し、封止樹脂中に例えば、セリウムを賦活したイットリウム・アルミニウム・ガーネット蛍光体のような青色励起の黄色発光蛍光体を封止樹脂中に含有させ、白色LEDとしてもよい。特に、蛍光体などを反射カップ部内に分散させる場合には、光が拡散されるため反射カップ部に当たる光が多く、反射カップ部表面の反射がより重要となる。
Claims (2)
- 金属材に平坦な底面とその周囲のスロープ部とを有する反射カップ部を形成したコア金属にホーロー材を焼き付けてホーロー層を形成し、次いで反射カップ部が設けられた発光素子実装面に、前記反射カップ部内の電極の厚さが5μm〜100μmの範囲となるように発光素子への通電用の電極を形成して発光素子実装用ホーロー基板を得る発光素子実装用ホーロー基板の製造方法であって、
前記電極が、パッド印刷法によってホーロー層上に導電ペーストを印刷し、それを焼結して形成されることを特徴とする発光素子実装用ホーロー基板の製造方法。 - 反射カップ部内の電極を焼結した後に、電極の平滑化を行うことを特徴とする請求項1に記載の発光素子実装用ホーロー基板の製造方法。
Priority Applications (9)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005167499A JP4037423B2 (ja) | 2005-06-07 | 2005-06-07 | 発光素子実装用ホーロー基板の製造方法 |
EP06747123A EP1890340B1 (en) | 2005-06-07 | 2006-06-02 | Method for producing a porcelain enameled substrate for light-emitting device mounting. |
KR1020077028452A KR100928309B1 (ko) | 2005-06-07 | 2006-06-02 | 발광소자 실장용 법랑 기판과 그 제조방법, 발광소자 모듈,조명장치, 표시장치 및 교통 신호기 |
DE602006019243T DE602006019243D1 (de) | 2005-06-07 | 2006-06-02 | Hertsellungsverfahen für das Produzieren eines porzellanglasiertes Substrat zur Leuchtbauelementenanbringung |
PCT/JP2006/311093 WO2006132147A1 (ja) | 2005-06-07 | 2006-06-02 | 発光素子実装用ホーロー基板とその製造方法、発光素子モジュール、照明装置、表示装置及び交通信号機 |
CN200680019593XA CN101189739B (zh) | 2005-06-07 | 2006-06-02 | 发光元件安装用珐琅基板及其制造方法、发光元件模块、照明装置、显示装置和交通信号机 |
TW095119868A TWI313938B (en) | 2005-06-07 | 2006-06-05 | Enamel substrate for mounting light emitting element and manufacturing method thereof, light emitting element module, illumination apparatus, display apparatus, and traffic signal device |
US11/950,904 US7572039B2 (en) | 2005-06-07 | 2007-12-05 | Porcelain enamel substrate for mounting light emitting device and method of manufacturing the same, light emitting device module, illumination device, display unit and traffic signal |
US12/372,529 US8382345B2 (en) | 2005-06-07 | 2009-02-17 | Porcelain enamel substrate for mounting light emitting device and method of manufacturing the same, light emitting device module, illumination device, display unit and traffic signal |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005167499A JP4037423B2 (ja) | 2005-06-07 | 2005-06-07 | 発光素子実装用ホーロー基板の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006344696A JP2006344696A (ja) | 2006-12-21 |
JP4037423B2 true JP4037423B2 (ja) | 2008-01-23 |
Family
ID=37498347
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005167499A Expired - Fee Related JP4037423B2 (ja) | 2005-06-07 | 2005-06-07 | 発光素子実装用ホーロー基板の製造方法 |
Country Status (8)
Country | Link |
---|---|
US (2) | US7572039B2 (ja) |
EP (1) | EP1890340B1 (ja) |
JP (1) | JP4037423B2 (ja) |
KR (1) | KR100928309B1 (ja) |
CN (1) | CN101189739B (ja) |
DE (1) | DE602006019243D1 (ja) |
TW (1) | TWI313938B (ja) |
WO (1) | WO2006132147A1 (ja) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7866853B2 (en) * | 2004-11-19 | 2011-01-11 | Fujikura Ltd. | Light-emitting element mounting substrate and manufacturing method thereof, light-emitting element module and manufacturing method thereof, display device, lighting device, and traffic light |
US7719021B2 (en) * | 2005-06-28 | 2010-05-18 | Lighting Science Group Corporation | Light efficient LED assembly including a shaped reflective cavity and method for making same |
WO2008111504A1 (ja) | 2007-03-12 | 2008-09-18 | Nichia Corporation | 高出力発光装置及びそれに用いるパッケージ |
US7967476B2 (en) * | 2007-07-04 | 2011-06-28 | Nichia Corporation | Light emitting device including protective glass film |
JP5227613B2 (ja) * | 2008-02-27 | 2013-07-03 | スタンレー電気株式会社 | 半導体発光装置 |
JP2010171130A (ja) * | 2009-01-21 | 2010-08-05 | Showa Denko Kk | ランプおよびランプの製造方法 |
KR101114592B1 (ko) | 2009-02-17 | 2012-03-09 | 엘지이노텍 주식회사 | 발광 디바이스 패키지 및 그 제조방법 |
DE102010017710A1 (de) * | 2009-07-07 | 2011-01-13 | Siteco Beleuchtungstechnik Gmbh | Trägerelement für LED-Modul |
DE102010017560A1 (de) * | 2010-06-24 | 2011-12-29 | Turck Holding Gmbh | Leuchte aufweisend eine Leiterplattenanordnung mit Leuchtdiode |
JP5915216B2 (ja) * | 2012-02-06 | 2016-05-11 | 大日本印刷株式会社 | リードフレーム及び半導体装置 |
KR20150014167A (ko) * | 2013-07-29 | 2015-02-06 | 삼성전기주식회사 | 유리 코어가 구비된 인쇄회로기판 |
JP6277875B2 (ja) * | 2014-06-12 | 2018-02-14 | 豊田合成株式会社 | 発光装置及びその製造方法 |
CN105826310A (zh) * | 2016-03-17 | 2016-08-03 | 广东华辉煌光电科技有限公司 | 一种大功率led多芯片光源模组 |
JP6128254B2 (ja) * | 2016-04-05 | 2017-05-17 | 大日本印刷株式会社 | リードフレーム及び半導体装置 |
EP4328638A1 (en) * | 2021-10-27 | 2024-02-28 | Samsung Electronics Co., Ltd. | Display device and manufacturing method therefor |
CN116449605A (zh) * | 2023-04-19 | 2023-07-18 | 惠科股份有限公司 | 背光模组及显示设备 |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4256796A (en) * | 1979-11-05 | 1981-03-17 | Rca Corporation | Partially devitrified porcelain composition and articles prepared with same |
DE3128187A1 (de) | 1981-07-16 | 1983-02-03 | Joachim 8068 Pfaffenhofen Sieg | Opto-elektronisches bauelement |
JPS599982A (ja) * | 1982-07-08 | 1984-01-19 | Sumitomo Electric Ind Ltd | 連続組立発光ダイオ−ド |
JPS6299166A (ja) * | 1985-10-26 | 1987-05-08 | Ricoh Co Ltd | 光書込みヘツド |
JPS6284942U (ja) | 1985-11-19 | 1987-05-30 | ||
US5043526A (en) * | 1986-03-13 | 1991-08-27 | Nintendo Company Ltd. | Printed circuit board capable of preventing electromagnetic interference |
JPS6427291A (en) * | 1986-05-02 | 1989-01-30 | Tdk Corp | Thin-film electronic device |
JPS62261192A (ja) * | 1986-05-08 | 1987-11-13 | ティーディーケイ株式会社 | 薄膜電子回路デバイス |
FR2618570B1 (fr) * | 1987-07-24 | 1990-10-19 | Warszawski Bernard | Procede de modulation de la lumiere |
JPS6427291U (ja) | 1987-08-07 | 1989-02-16 | ||
JP2626064B2 (ja) * | 1989-07-04 | 1997-07-02 | 松下電器産業株式会社 | サーマルヘッドおよびその製造方法 |
JPH0785721A (ja) * | 1993-09-13 | 1995-03-31 | Daiken Kagaku Kogyo Kk | 厚膜印刷用インクおよびこれを用いた非平面印刷法 |
JPH08148709A (ja) | 1994-11-15 | 1996-06-07 | Mitsubishi Electric Corp | 薄型太陽電池の製造方法及び薄型太陽電池の製造装置 |
JPH08295005A (ja) | 1995-04-26 | 1996-11-12 | Fujikura Ltd | 導電ペーストの乾燥方法 |
JPH09246694A (ja) * | 1996-03-12 | 1997-09-19 | Mitsubishi Materials Corp | 導電性厚膜を有する回路基板及びその製造方法 |
US6483079B2 (en) * | 1996-04-10 | 2002-11-19 | Denso Corporation | Glow plug and method of manufacturing the same, and ion current detector |
US6608332B2 (en) * | 1996-07-29 | 2003-08-19 | Nichia Kagaku Kogyo Kabushiki Kaisha | Light emitting device and display |
US6578989B2 (en) * | 2000-09-29 | 2003-06-17 | Omron Corporation | Optical device for an optical element and apparatus employing the device |
US20030219919A1 (en) * | 2002-05-23 | 2003-11-27 | Wang Der-Nan | Package method for enhancing the brightness of LED |
TWI220282B (en) | 2002-05-23 | 2004-08-11 | Viking Technology Corp | Package method for enhancing the brightness of LED |
JP2004228549A (ja) * | 2002-11-25 | 2004-08-12 | Kyocera Corp | 発光素子収納用パッケージおよび発光装置 |
US7196459B2 (en) | 2003-12-05 | 2007-03-27 | International Resistive Co. Of Texas, L.P. | Light emitting assembly with heat dissipating support |
JP4401259B2 (ja) * | 2004-08-20 | 2010-01-20 | 富士通株式会社 | タッチパネル装置 |
JP4037404B2 (ja) * | 2004-11-19 | 2008-01-23 | 株式会社フジクラ | 発光素子実装用基板とその製造方法 |
-
2005
- 2005-06-07 JP JP2005167499A patent/JP4037423B2/ja not_active Expired - Fee Related
-
2006
- 2006-06-02 KR KR1020077028452A patent/KR100928309B1/ko not_active IP Right Cessation
- 2006-06-02 CN CN200680019593XA patent/CN101189739B/zh not_active Expired - Fee Related
- 2006-06-02 DE DE602006019243T patent/DE602006019243D1/de active Active
- 2006-06-02 EP EP06747123A patent/EP1890340B1/en not_active Expired - Fee Related
- 2006-06-02 WO PCT/JP2006/311093 patent/WO2006132147A1/ja active Application Filing
- 2006-06-05 TW TW095119868A patent/TWI313938B/zh not_active IP Right Cessation
-
2007
- 2007-12-05 US US11/950,904 patent/US7572039B2/en not_active Expired - Fee Related
-
2009
- 2009-02-17 US US12/372,529 patent/US8382345B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US7572039B2 (en) | 2009-08-11 |
TW200703726A (en) | 2007-01-16 |
TWI313938B (en) | 2009-08-21 |
EP1890340B1 (en) | 2010-12-29 |
EP1890340A1 (en) | 2008-02-20 |
US20090161366A1 (en) | 2009-06-25 |
DE602006019243D1 (de) | 2011-02-10 |
US8382345B2 (en) | 2013-02-26 |
EP1890340A4 (en) | 2009-09-30 |
CN101189739A (zh) | 2008-05-28 |
CN101189739B (zh) | 2012-03-07 |
WO2006132147A1 (ja) | 2006-12-14 |
US20080079018A1 (en) | 2008-04-03 |
KR100928309B1 (ko) | 2009-11-25 |
KR20080007402A (ko) | 2008-01-18 |
JP2006344696A (ja) | 2006-12-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4037423B2 (ja) | 発光素子実装用ホーロー基板の製造方法 | |
JP4572994B2 (ja) | 発光モジュールおよび照明装置 | |
JP4091063B2 (ja) | 発光素子実装用基板および発光素子モジュール | |
EP1890341B1 (en) | Porcelain enameled substrate for light-emitting device mounting, light-emitting device module, illuminating device, display and traffic signal device | |
JP4915058B2 (ja) | Led部品およびその製造方法 | |
US20140339594A1 (en) | Light emitting device and method for manufacturing the same | |
EP2346307A2 (en) | Lighting Apparatus | |
EP2192614A2 (en) | Electronic component mounting module and electrical apparatus | |
JP2006344690A (ja) | 発光素子実装用ホーロー基板、発光素子モジュール、照明装置、表示装置及び交通信号機 | |
JP2011228653A (ja) | 発光素子用基板および発光装置 | |
JP5229123B2 (ja) | 発光ダイオード搭載用基板およびその製造方法 | |
JP4912624B2 (ja) | 発光素子実装用基板の製造方法及び発光素子モジュールの製造方法 | |
EP2713411B1 (en) | Luminescence device | |
KR20090111071A (ko) | 반도체 패키지용 기판 및 이를 이용한 반도체 패키지 | |
WO2007138677A1 (ja) | 発光素子実装用ホーロー基板及び光源装置 | |
Heikkinen et al. | High-brightness RGB LED modules based on alumina substrate | |
JP2006344695A (ja) | 発光素子実装用ホーロー基板、発光素子モジュール、照明装置、表示装置及び交通信号機 | |
CN104465951A (zh) | 一种制造板上芯片和表面安装器件发光二极管基板的方法 | |
JP2007019480A (ja) | 発光素子実装用ホーロー基板、発光素子モジュール、照明装置、表示装置及び交通信号機 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20070628 |
|
A871 | Explanation of circumstances concerning accelerated examination |
Free format text: JAPANESE INTERMEDIATE CODE: A871 Effective date: 20070628 |
|
A975 | Report on accelerated examination |
Free format text: JAPANESE INTERMEDIATE CODE: A971005 Effective date: 20070717 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20070724 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20070925 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20071023 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20071031 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20101109 Year of fee payment: 3 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20111109 Year of fee payment: 4 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20121109 Year of fee payment: 5 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20121109 Year of fee payment: 5 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20131109 Year of fee payment: 6 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |