JP2022173213A - 基板処理装置及び基板処理方法 - Google Patents
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- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
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- B23K26/03—Observing, e.g. monitoring, the workpiece
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- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
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- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
- B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting
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Abstract
Description
60 改質装置
90 制御装置
100 チャック
110 レーザヘッド
121 マクロカメラ
122 マイクロカメラ
M1 周縁改質層
S 支持ウェハ
T 重合ウェハ
W 処理ウェハ
Wc 中央部
We 周縁部
Claims (10)
- 基板を処理する基板処理装置であって、
前記基板を保持する保持部と、
前記保持部に保持された前記基板を撮像する撮像部と、
前記保持部と前記撮像部を相対的に移動させる移動部と、
前記保持部、前記撮像部及び前記移動部を制御する制御部と、を有し、
前記撮像部は、前記基板の複数点においてフォーカス調整を行った後、前記基板の複数点を撮像し、
前記制御部は、前記撮像部のフォーカス調整及び/又は前記撮像部による撮像を、前記保持部と前記撮像部を相対的に移動させながら行うように、前記保持部、前記撮像部及び前記移動部を制御する、基板処理装置。 - 前記撮像部は、前記基板の外側端部を撮像する第1の撮像部を含み、
前記制御部は、前記第1の撮像部によって撮像された画像から、前記保持部の中心と前記基板の中心の第1の偏心量を算出する、請求項1に記載の基板処理装置。 - 前記制御部は、前記第1の偏心量に基づいて、当該第1の偏心量の前記移動部による移動方向成分を補正するように、前記保持部と前記第1の撮像部の相対的な移動量を算出する、請求項2に記載の基板処理装置。
- 前記基板は、第1の基板と第2の基板が接合された重合基板であり、
前記撮像部は、前記第1の基板における接合領域と未接合領域の境界を撮像する第2の撮像部を含み、
前記制御部は、前記第2の撮像部によって撮像された画像から、前記保持部の中心と前記接合領域の中心の第2の偏心量を算出する、請求項1又は2に記載の基板処理装置。 - 前記制御部は、前記第2の偏心量に基づいて、前記保持部の中心と前記接合領域の中心が一致するように、前記保持部と前記第2の撮像部の相対的な位置を決定する、請求項4に記載の基板処理装置。
- 基板を処理する基板処理方法であって、
前記基板を保持部で保持することと、
前記保持部に保持された前記基板を撮像部で撮像することと、を有し、
前記撮像部による撮像を行う際、前記基板の複数点においてフォーカス調整を行った後、前記基板の複数点を撮像し、
前記撮像部のフォーカス調整及び/又は前記撮像部による撮像を、前記保持部と前記撮像部を相対的に移動させながら行う、基板処理方法。 - 前記保持部に保持された前記基板の外側端部を第1の撮像部で撮像することを有し、
前記第1の撮像部によって撮像された画像から、前記保持部の中心と前記基板の中心の第1の偏心量を算出する、、請求項6に記載の基板処理方法。 - 前記第1の偏心量における、前記保持部と前記撮像部の相対的な移動の移動方向成分を補正するように、前記保持部と前記第1の撮像部の相対的な移動量を算出する、請求項7に記載の基板処理方法。
- 前記基板は、第1の基板と第2の基板が接合された重合基板であり、
前記保持部に保持された前記第1の基板における接合領域と未接合領域の境界を第2の撮像部で撮像することを有し、
前記第2の撮像部によって撮像された画像から、前記保持部の中心と前記接合領域の中心の第2の偏心量を算出する、請求項6又は7に記載の基板処理方法。 - 前記第2の偏心量に基づいて、前記保持部の中心と前記接合領域の中心が一致するように、前記保持部と前記第2の撮像部の相対的な位置を決定する、請求項9に記載の基板処理方法。
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