JP2020107670A - 半導体装置およびその製造方法 - Google Patents
半導体装置およびその製造方法 Download PDFInfo
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- JP2020107670A JP2020107670A JP2018243176A JP2018243176A JP2020107670A JP 2020107670 A JP2020107670 A JP 2020107670A JP 2018243176 A JP2018243176 A JP 2018243176A JP 2018243176 A JP2018243176 A JP 2018243176A JP 2020107670 A JP2020107670 A JP 2020107670A
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- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
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Abstract
Description
まず、一実施の形態を説明する前に、公知ではないが、本発明者が先に出願(特願2017-145400:出願日2017年7月27日)したIE型IGBTを比較例として説明する。
以下に、図1及び図2を用いて、IE型IGBTを有する半導体装置について説明する。
尚、ハードマスクHDの除去は、熱処理後でもよい。
ゲート絶縁膜GIE、GIGは、半導体基板1Sの第1主面1a上にも形成される。
図14は、一実施の形態の変形例1に係る半導体装置の構成を示す要部断面図である。
図15は、一実施の形態の変形例2に係る半導体装置の構成を示す要部断面図である。
第1主面及び前記第1主面とは反対側の第2主面を有する半導体基板と、
前記第1主面に形成されたストライプ状のトレンチゲートと、
前記第1主面に形成され、かつ、前記トレンチゲートに対向するように配置されたストライプ状の第1トレンチエミッタと、
平面視において、前記トレンチゲートと前記第1トレンチエミッタで囲まれた領域の前記第1主面に形成され、かつ、前記トレンチゲートの一側面に配置されたN型エミッタ層及びP型ベース層と、
前記第1主面に形成され、前記第1トレンチエミッタの一側面に配置され、かつ、前記ベース層より高不純物濃度のP型ベースコンタクト層と、
前記第1主面に形成され、前記トレンチゲートに対向するように配置され、かつ、前記第1トレンチエミッタと反対側に配置されたストライプ状の第2トレンチエミッタと、
平面視において、前記トレンチゲート及び前記第2トレンチエミッタの外側の前記第1主面に形成されたP型フロ−ティング層と、
前記P型ベースコンタクト層、前記第1トレンチエミッタ及び前記N型エミッタ層に共通接続されたエミッタ電極と、
前記第2主面に形成されたP型コレクタ層と、
前記P型コレクタ層と前記P型ベース層との間の前記半導体基板中に形成されたN型ドリフト層とを有し、
前記半導体基板の厚さ方向において、前記第1トレンチエミッタの底面部は、前記トレンチゲートの底面部より浅い位置に配置され、
前記半導体基板の厚さ方向において、前記第2トレンチエミッタの底面部は、前記トレンチゲートの底面部より深い位置に配置され、
前記トレンチゲートの外側に配置された前記P型フロ−ティング層は、前記1トレンチエミッタの底面部を覆うように形成される、ことにある。
前記半導体基板の厚さ方向において、前記P型ベース層と前記N型ドリフト層との間に形成され、かつ、前記N型ドリフト層より高不純物濃度のN型層を有し、
前記P型フロ−ティング層は、前記高不純物濃度のN型層の底面部を覆うように形成さる、ことにある。
以上のように、本実施の形態に係る半導体装置では、トレンチゲートとトレンチエミッタとを互いに対向するように配置したので、IE型IGBTのIE効果を向上することができる。更に、トレンチエミッタ14eの深さをトレンチゲート14gの深さより深く形成したので、半導体装置の電気的信頼性を向上することができる。
1a 半導体基板の第1主面
1b 半導体基板の第2主面
2 平面模式図
3 高抵抗領域
4 ターミネーション領域
8 エミッタ電極
11 開口
11a コンタクト溝
12 N型エミッタ層
14e トレンチエミッタ
14g トレンチゲート
15 P型ベース層
15a P型層
16 P型フローティング層
17 コレクタ電極
18 P型コレクタ層
19 N型バッファ層
20 N型ドリフト層
21e トレンチ
21g トレンチ
22a 絶縁膜
23 P型ラッチアップ防止層
24 N型ホールバリア層
25 P型ベースコンタクト層
26 層間絶縁膜
GIG 絶縁膜
GEG 絶縁膜
HM ハードマスク
STR1 ストライプ状の第1領域
STR1 ストライプ状の第2領域
W1 トレンチエミッタ幅
W2 トレンチゲート幅
Claims (12)
- 第1主面及び前記第1主面と反対側の第2主面を有する半導体基板と、
前記第1主面に形成されたストライプ状のトレンチゲートと、
前記第1主面に形成され、かつ、前記トレンチゲートに対向するように配置されたストライプ状のトレンチエミッタと、
平面視において、前記トレンチゲート及び前記トレンチエミッタで囲まれた領域の前記第1主面に形成され、かつ、前記トレンチゲートの一側面に配置されたN型エミッタ層及びP型ベース層と、
前記第1主面に形成され、前記トレンチエミッタの一側面に配置され、かつ、前記ベース層より高不純物濃度のP型ベースコンタクト層と、
平面視において、前記トレンチゲート及び前記トレンチエミッタの外側の前記第1主面に形成され、かつ、前記トレンチゲートの他側面及び前記トレンチエミッタの他側面に夫々配置されたP型フロ−ティング層と、
前記P型ベースコンタクト層、前記トレンチエミッタ及び前記N型エミッタ層に共通接続されたエミッタ電極と、
前記第2主面に形成されたP型コレクタ層と、
前記P型コレクタ層と前記P型ベース層との間の前記半導体基板中に形成されたN型ドリフト層とを有し、
前記半導体基板の厚さ方向において、前記トレンチエミッタの底面部は、前記トレンチゲートの底面部より前記P型コレクタ層に近い、
半導体装置。 - 前記半導体基板の厚さ方向において、前記トレンチエミッタの深さは、前記トレンチゲートの深さより深い、請求項1に記載の半導体装置。
- 前記エミッタ電極は、N型エミッタ層及び前記P型ベース層に共通接続される、請求項1に記載の半導体装置。
- 前記半導体基板の厚さ方向において、前記P型ベース層と前記N型ドリフト層との間に形成され、かつ、前記N型ドリフト層より高不純物濃度のN型層を有する、
請求項1に記載の半導体装置。 - 半導体基板に形成されたストライプ状のトレンチゲートと、
平面視において、前記トレンチゲートと所定の間隔で配置され、かつ、前記トレンチゲートに沿うように前記半導体基板に形成されたトレンチエミッタと、
を有し、
前記半導体基板の厚さ方向において、前記トレンチエミッタの深さは、前記トレンチゲートの深さよりも深い、IE型IGBTを有する半導体装置。 - 平面視において、前記トレンチゲート及び前記トレンチエミッタで囲まれた領域の前記半導体基板に形成され、かつ、前記トレンチゲートの一側面に配置されたN型エミッタ層及びP型ベース層と、
前記半導体基板に形成され、前記トレンチエミッタの一側面に配置され、かつ、前記ベース層より高不純物濃度のP型ベースコンタクト層と、
前記P型ベースコンタクト層、前記トレンチエミッタ及び前記エミッタ層に共通接続されたエミッタ電極と、
平面視において、前記トレンチゲート及び前記トレンチエミッタの外側の前記半導体基板に形成され、かつ、前記トレンチゲートの他側面及び前記トレンチエミッタの他側面に夫々配置されたP型フロ−ティング層と、
前記第2主面に形成されたP型コレクタ層と、
前記P型コレクタ層と前記P型ベース層との間の前記半導体基板中に形成されたN型ドリフト層とを有する、請求項5に記載のIE型IGBTを有する半導体装置。 - 前記半導体基板の厚さ方向において、前記P型ベース層と前記N型ドリフト層との間に形成され、かつ、前記N型ドリフト層より高不純物濃度のN型層を有する、IE型IGBTを有する請求項6に記載の半導体装置。
- (a)第1主面及び前記第1主面とは反対側の第2主面を有するN型の半導体基板を準備する工程、
(b)前記半導体基板の前記第1主面上に、ストライプ状の第1領域と、前記第1領域に沿って所定の間隔で配置されたストライプ状の第2領域とを規定するエッチングマスクを形成する工程、
(c)前記エッチングマスクによって規定された領域の前記半導体基板をエッチングすることによって、前記第1領域の前記半導体基板中に第1トレンチを形成し、前記第2領域の前記半導体基板中に第2トレンチを形成する工程、
(d)前記第1トレンチ及び前記第2トレンチ内に導電性膜を埋め込むことによって、前記第1トレンチ内にトレンチエミッタを形成し、前記第2トレンチ内にトレンチゲートを形成する工程、
(e)前記第1トレンチ及び前記第2トレンチに囲まれた領域の前記半導体基板の前記第1主面にP型ベース層を形成する工程、
(f)前記P型ベース層中にN型エミッタ層を形成する工程、
(g)前記半導体基板の前記第2主面にP型コレクタ層を形成する工程を有し、
前記工程(b)の前記エッチングマスクは、前記第1領域の幅が前記第2領域の幅よりも大きく形成され、
前記工程(c)において、前記第1トレンチの深さは、前記第2トレンチより深く形成される、IE型IGBTを有する半導体装置の製造方法。 - 前記工程(c)において、前記第1トレンチ及び前記第2トレンチは同一のエッチング工程により形成される、請求項8に記載のIE型IGBTを有する半導体装置の製造方法。
- 前記工程(d)における前記導電性膜は、N型不純物が導入された多結晶シリコン膜である、請求項9に記載のIE型IGBTを有する半導体装置の製造方法。
- 前記工程(b)に先立って、更に、前記半導体基板の前記第1主面上に、P型フローティング層を形成するためのP型不純物導入工程を有する、請求項10に記載のIE型IGBTを有する半導体装置の製造方法。
- 前記工程(b)に先立って、更に、前記半導体基板の前記第1主面上に、N型ホールバリア層を形成するためのN型不純物導入工程を有する、請求項10に記載のIE型IGBTを有する半導体装置の製造方法。
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