JP2018107359A - 半導体装置、システム、および、半導体装置の製造方法 - Google Patents
半導体装置、システム、および、半導体装置の製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 194
- 238000000034 method Methods 0.000 title claims description 68
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- 229910052751 metal Inorganic materials 0.000 claims abstract description 243
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- 229910021332 silicide Inorganic materials 0.000 claims abstract description 93
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 50
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 50
- 239000010703 silicon Substances 0.000 claims abstract description 50
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- 238000005240 physical vapour deposition Methods 0.000 claims description 20
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical group [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 19
- 229910052719 titanium Inorganic materials 0.000 claims description 19
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- 239000010937 tungsten Substances 0.000 claims description 9
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- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 5
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- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
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- 238000005121 nitriding Methods 0.000 description 2
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- GNFTZDOKVXKIBK-UHFFFAOYSA-N 3-(2-methoxyethoxy)benzohydrazide Chemical compound COCCOC1=CC=CC(C(=O)NN)=C1 GNFTZDOKVXKIBK-UHFFFAOYSA-N 0.000 description 1
- 241000252073 Anguilliformes Species 0.000 description 1
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- 229910019001 CoSi Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
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- UGACIEPFGXRWCH-UHFFFAOYSA-N [Si].[Ti] Chemical compound [Si].[Ti] UGACIEPFGXRWCH-UHFFFAOYSA-N 0.000 description 1
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- RFHAOTPXVQNOHP-UHFFFAOYSA-N fluconazole Chemical compound C1=NC=NN1CC(C=1C(=CC(F)=CC=1)F)(O)CN1C=NC=N1 RFHAOTPXVQNOHP-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
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- H01L27/144—Devices controlled by radiation
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- H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
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Abstract
Description
図1(a)を用いて、半導体装置APの構成を説明する。本実施形態における半導体装置APは光電変換装置であり、撮像装置である。典型的な半導体装置APはCMOSイメージセンサーである。半導体装置APは半導体チップIC内に複数の画素ユニットUNTを備える。複数の画素ユニットUNTの各々は、シリコン層の中に配された光電変換素子を含む画素回路を有する。画素ユニットUNTの各々は、マイクロレンズやカラーフィルタ、層内レンズ、光導波路等の光学素子を含むことができる。画素ユニットUNTは半導体装置APの受光エリアPXRと遮光エリアOBRに配されている。受光エリアPXRと遮光エリアOBRを併せて画素エリアと称することができる。画素ユニットUNTを光電変換ユニット、画素回路を光電変換回路と称することができる。
<半導体装置の製造方法>
半導体装置の製造方法を図3、4を参照して説明する。図3、4では半導体装置の製造方法の工程x(x=a〜i)を順に示しており、図3、4の工程xを図面の枝番(x−1)で示しており、要部の拡大図を図面の枝番(x−2)で示している。
103、105 半導体領域
230、250 孔
300 絶縁体膜
223、243 金属部
222、242 導電体部
211、201 シリサイド領域
Claims (20)
- 第1半導体領域および第2半導体領域を有するシリコン層と、
前記シリコン層の上に配され、前記第1半導体領域の上に位置する第1孔および前記第2半導体領域の上に位置する第2孔を有する絶縁体膜と、
前記第1孔の中に配された第1金属元素を含む第1金属部と、
前記第1金属部と前記第1半導体領域との間に配され、前記第1金属元素とは別の第2金属元素を含有する第1導電体部と、
前記第1導電体部と前記第1半導体領域との間に配され、前記第2金属元素を含有する第1シリサイド領域と、
前記第2孔の中に配された前記第1金属元素を含む第2金属部と、
前記第2金属部と前記第2半導体領域との間に配され、前記第2金属元素を含有する第2導電体部と、
前記第2導電体部と前記第2半導体領域との間に配され、前記第1金属元素および前記第2金属元素とは別の第3金属元素を含有する第2シリサイド領域と、を備え、
前記第1導電体部の厚さは、前記第1シリサイド領域の厚さ、および、前記第2導電体部の厚さよりも大きいことを特徴とする半導体装置。 - 前記第1導電体部の抵抗率は前記第1金属部の抵抗率よりも大きく、前記第2導電体部の抵抗率は前記第2金属部の抵抗率よりも大きい、請求項1に記載の半導体装置。
- 前記第1金属部と前記絶縁体膜との間には、前記第1金属部に含まれる金属元素とは別の金属元素を含有する第3導電体部が配されており、
前記第2金属部と前記絶縁体膜との間には、前記第2金属部に含まれる金属元素とは別の金属元素を含有する第4導電体部が配されており、
前記第3導電体部の厚さに対する前記第1導電体部の厚さの比が、前記第4導電体部の厚さに対する前記第2導電体部の厚さの比よりも大きい、請求項1または2に記載の半導体装置。 - 前記第1金属部と前記絶縁体膜との間には、前記第1金属部に含まれる金属元素とは別の金属元素を含有する第3導電体部が配されており、
前記第2金属部と前記絶縁体膜との間には、前記第2金属部に含まれる金属元素とは別の金属元素を含有する第4導電体部が配されており、
前記第3導電体部の厚さは前記第4導電体部の厚さよりも小さい、請求項1乃至3のいずれか1項に記載の半導体装置。 - 前記第1導電体部は、前記第2金属元素を含有する第1金属層と、前記第1金属層と前記第1金属部との間に配された第1金属化合物層と、を有し、
前記第1金属層の厚さが、前記第1金属化合物層の厚さ、および、前記第2導電体部の前記厚さの少なくとも一方よりも大きい、請求項1乃至4のいずれか1項に記載の半導体装置。 - 前記第1金属元素はタングステンであり、前記第2金属元素はチタンであり、前記第3金属元素はコバルトまたはニッケルである、請求項1乃至5のいずれか1項に記載の半導体装置。
- 第1半導体領域および第2半導体領域を有するシリコン層と、
前記シリコン層の上に配され、前記第1半導体領域の上に位置する第1孔および前記第2半導体領域の上に位置する第2孔を有する絶縁体膜と、
前記第1孔の中に配された第1コンタクトプラグと、
前記第2孔の中に配された第2コンタクトプラグと、
前記第1コンタクトプラグと前記第1半導体領域との間に配された第1シリサイド領域と、
前記第2コンタクトプラグと前記第2半導体領域との間、および、前記絶縁体膜と前記第2半導体領域との間に配された第2シリサイド領域と、を備える半導体装置であって、
前記第1コンタクトプラグは、第1金属部と第1バリアメタル部とを有し、
前記第2コンタクトプラグは、第2金属部と第2バリアメタル部とを有し、
前記第1バリアメタル部うちで前記第1金属部と前記第1シリサイド領域との間に位置する第1部分の厚さは、前記第1シリサイド領域の厚さ、および、前記第2バリアメタル部のうちで前記第2金属部と前記第2シリサイド領域との間に位置する第2部分の厚さよりも大きいことを特徴とする半導体装置。 - 前記第1バリアメタル部のうちで前記第1金属部と前記絶縁体膜との間に位置する第3部分の厚さは、前記第2バリアメタル部のうちで前記第2金属部と前記絶縁体膜との間に位置する第4部分の厚さよりも小さい、請求項7に記載の半導体装置。
- 前記第1バリアメタル部のうちで前記第1金属部と前記絶縁体膜との間に位置する第3部分の厚さに対する前記第1部分の厚さの比が、前記第2バリアメタル部のうちで前記第2金属部と前記絶縁体膜との間に位置する第4部分の厚さに対する前記第2部分の比よりも大きい、請求項7または8に記載の半導体装置。
- 前記第1孔の幅が前記第2孔の幅と異なる、請求項1乃至9のいずれか1項に記載の半導体装置。
- 前記第1半導体領域および前記第2半導体領域のそれぞれは、トランジスタのドレインを構成する、請求項1乃至10のいずれか1項に記載の半導体装置。
- 前記第1半導体領域は、前記絶縁体膜の下に位置する不純物領域と、前記第1孔の下に位置し不純物濃度が前記不純物領域の不純物濃度よりも高い部分と、を含む、請求項1乃至11いずれか1項に記載の半導体装置。
- 前記第1半導体領域は画素回路を構成し、前記第2半導体領域は周辺回路を構成する、請求項1乃至12のいずれか1項に記載の半導体装置。
- 前記第1半導体領域には光電変換部で生成された電荷が転送される、請求項1乃至13のいずれか1項に記載の半導体装置。
- 請求項1乃至14のいずれか1項に記載の半導体装置と、
前記半導体装置に結像する光学系、前記半導体装置を制御する制御装置、前記半導体装置から出力された信号を処理する処理装置、前記半導体装置で得られた情報を表示する表示装置、および、前記半導体装置で得られた情報を記憶する記憶装置の少なくともいずれかと、を備えることを特徴とするシステム。 - 第1半導体領域および第2半導体領域を有するシリコン層と、前記第1半導体領域および前記第2半導体領域を覆う絶縁体膜と、前記第2半導体領域と前記絶縁体膜との間に配されたシリサイド領域と、を有する部材を用意する工程と、
前記第1半導体領域の上において前記絶縁体膜に設けられた第1孔の中に、物理気相成長法および化学気相成長法の一方により第1導電体膜を形成する工程と、
前記第1孔の中に、物理気相成長法および化学気相成長法の他方により第2導電体膜を形成する工程と、
前記第1導電体膜および前記第2導電体膜が形成された前記第1孔の中に、金属膜を形成する工程と、
前記シリサイド領域の上において前記絶縁体膜に設けられた第2孔の中に、前記シリサイド領域に接する第3導電体膜を化学気相成長法により形成する工程と、を有することを特徴とする半導体装置の製造方法。 - 前記第1導電体膜は、前記第1半導体領域に接する金属層と前記金属層の上の金属化合物層とを含む、請求項16に記載の半導体装置の製造方法。
- 前記第1孔の中に形成された前記第1導電体膜と前記シリコン層を反応させてシリサイド領域を形成する、請求項16または17に記載の半導体装置の製造方法。
- 前記第2導電体膜を形成する工程の後に、前記絶縁体膜に前記第2孔を形成する工程を有する、請求項16乃至18のいずれか1項に記載の半導体装置の製造方法。
- 物理気相成長法により前記第1導電体膜を形成した後に、化学気相成長法により前記第2導電体膜を形成する、請求項11乃至14のいずれか1項に記載の半導体装置の製造方法。
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2021068788A (ja) * | 2019-10-21 | 2021-04-30 | キヤノン株式会社 | 光電変換装置、光電変換装置の製造方法、および撮像システム |
WO2023195279A1 (ja) * | 2022-04-08 | 2023-10-12 | キヤノン株式会社 | 発光装置、表示装置、光電変換装置、電子機器、照明装置、および、移動体 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11595372B1 (en) * | 2017-08-28 | 2023-02-28 | Amazon Technologies, Inc. | Data source driven expected network policy control |
WO2020059479A1 (ja) * | 2018-09-18 | 2020-03-26 | ソニー株式会社 | 表示装置及び電子機器 |
CN112397531B (zh) * | 2019-08-13 | 2024-07-23 | 联华电子股份有限公司 | 半导体元件及其制造方法 |
CN113130516A (zh) * | 2020-01-15 | 2021-07-16 | 联华电子股份有限公司 | 半导体影像感测元件及其制作方法 |
Family Cites Families (25)
Publication number | Priority date | Publication date | Assignee | Title |
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JP3624140B2 (ja) | 1999-08-05 | 2005-03-02 | キヤノン株式会社 | 光電変換装置およびその製造方法、デジタルスチルカメラ又はデジタルビデオカメラ |
JP3504211B2 (ja) | 2000-03-31 | 2004-03-08 | 株式会社ルネサステクノロジ | 半導体装置の製造方法 |
JP3664939B2 (ja) | 2000-04-14 | 2005-06-29 | 富士通株式会社 | Cmosイメージセンサ及びその製造方法 |
JP2003100659A (ja) | 2001-09-27 | 2003-04-04 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
JP2003142683A (ja) | 2001-11-02 | 2003-05-16 | Mitsubishi Electric Corp | 半導体装置および半導体製造方法 |
JP2003249550A (ja) | 2002-02-25 | 2003-09-05 | Mitsubishi Electric Corp | 半導体集積回路装置及びその製造方法 |
JP2003264277A (ja) | 2002-03-07 | 2003-09-19 | Fujitsu Ltd | Cmosイメージセンサおよびその製造方法 |
JP3792628B2 (ja) | 2002-09-02 | 2006-07-05 | 富士通株式会社 | 固体撮像装置及び画像読み出し方法 |
JP4578792B2 (ja) | 2003-09-26 | 2010-11-10 | 富士通セミコンダクター株式会社 | 固体撮像装置 |
JP2006318991A (ja) | 2005-05-10 | 2006-11-24 | Nec Electronics Corp | 半導体装置およびその製造方法 |
JP2010010402A (ja) | 2008-06-27 | 2010-01-14 | Sony Corp | 半導体装置の製造方法および固体撮像装置の製造方法 |
JP2011077072A (ja) | 2009-09-29 | 2011-04-14 | Panasonic Corp | 固体撮像素子及びその製造方法 |
JP2011204916A (ja) | 2010-03-25 | 2011-10-13 | Toshiba Corp | 固体撮像装置およびその製造方法 |
JP4993007B2 (ja) | 2010-07-26 | 2012-08-08 | 富士通セミコンダクター株式会社 | 固体撮像装置 |
JP5246218B2 (ja) | 2010-07-26 | 2013-07-24 | 富士通セミコンダクター株式会社 | 固体撮像装置の製造方法 |
JP5823780B2 (ja) | 2011-08-31 | 2015-11-25 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
JP5991729B2 (ja) * | 2011-10-07 | 2016-09-14 | キヤノン株式会社 | 固体撮像装置の製造方法 |
JP5963449B2 (ja) | 2012-01-16 | 2016-08-03 | キヤノン株式会社 | 光電変換装置の製造方法 |
JP5985269B2 (ja) | 2012-06-26 | 2016-09-06 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
JP2014090051A (ja) | 2012-10-30 | 2014-05-15 | Renesas Electronics Corp | 半導体装置およびその製造方法 |
JP2014241363A (ja) | 2013-06-12 | 2014-12-25 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
JP6193695B2 (ja) | 2013-09-13 | 2017-09-06 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
JP6234173B2 (ja) | 2013-11-07 | 2017-11-22 | ルネサスエレクトロニクス株式会社 | 固体撮像素子の製造方法 |
JP2016103615A (ja) | 2014-11-28 | 2016-06-02 | キヤノン株式会社 | 撮像装置の製造方法、撮像装置および撮像システム |
JP2016103614A (ja) | 2014-11-28 | 2016-06-02 | キヤノン株式会社 | 半導体装置の製造方法 |
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Cited By (3)
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JP2021068788A (ja) * | 2019-10-21 | 2021-04-30 | キヤノン株式会社 | 光電変換装置、光電変換装置の製造方法、および撮像システム |
US11990485B2 (en) | 2019-10-21 | 2024-05-21 | Canon Kabushiki Kaisha | Photoelectric conversion device having a semiconductor substrate with first, second and third photoelectric conversion portions |
WO2023195279A1 (ja) * | 2022-04-08 | 2023-10-12 | キヤノン株式会社 | 発光装置、表示装置、光電変換装置、電子機器、照明装置、および、移動体 |
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