JP5963449B2 - 光電変換装置の製造方法 - Google Patents
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- 239000000758 substrate Substances 0.000 claims description 34
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- 229910052751 metal Inorganic materials 0.000 claims description 22
- 239000002184 metal Substances 0.000 claims description 22
- 238000002955 isolation Methods 0.000 claims description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 13
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 13
- 238000010438 heat treatment Methods 0.000 claims description 12
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 10
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- 125000006850 spacer group Chemical group 0.000 claims description 5
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- 239000011241 protective layer Substances 0.000 description 51
- 239000003870 refractory metal Substances 0.000 description 40
- 229910021332 silicide Inorganic materials 0.000 description 32
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 32
- 230000002093 peripheral effect Effects 0.000 description 17
- 238000009825 accumulation Methods 0.000 description 10
- 238000005530 etching Methods 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 6
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- 239000010941 cobalt Substances 0.000 description 6
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
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- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical class OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- 239000003963 antioxidant agent Substances 0.000 description 4
- 230000003078 antioxidant effect Effects 0.000 description 4
- AIOWANYIHSOXQY-UHFFFAOYSA-N cobalt silicon Chemical compound [Si].[Co] AIOWANYIHSOXQY-UHFFFAOYSA-N 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 239000003929 acidic solution Substances 0.000 description 2
- 239000012670 alkaline solution Substances 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- -1 for example Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- ZXEYZECDXFPJRJ-UHFFFAOYSA-N $l^{3}-silane;platinum Chemical compound [SiH3].[Pt] ZXEYZECDXFPJRJ-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229910021357 chromium silicide Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910021344 molybdenum silicide Inorganic materials 0.000 description 1
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 1
- 229910021334 nickel silicide Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910021339 platinum silicide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910021341 titanium silicide Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14689—MOS based technologies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
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- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Description
Claims (9)
- 光電変換装置の製造方法であって、
半導体基板に設けられた光電変換部と、前記光電変換部で発生した電荷が転送される浮遊拡散領域と、前記半導体基板の上に設けられたトランジスタのゲート電極と、を覆うシリコン酸化膜を形成する第1工程と、
前記シリコン酸化膜から、前記光電変換部及び前記浮遊拡散領域を覆うとともに、前記トランジスタの半導体領域及び前記ゲート電極の上面を露出する第1層を形成する第2工程と、
前記第1層の上と、前記トランジスタの前記半導体領域及び前記ゲート電極の前記上面の上とに金属膜を形成する第3工程と、
前記金属膜に熱処理を施して前記トランジスタの前記半導体領域及び前記ゲート電極の前記上面に金属半導体化合物からなる第2層を形成する第4工程と、
前記金属膜のうち、前記第1層を介して前記光電変換部及び前記浮遊拡散領域の上に位置する部分を除去する第5工程と、
前記第5工程の後に、前記第1層のうち、前記光電変換部を覆う領域において前記半導体基板側の部分を残しつつ前記金属膜に接触していた部分を除去し、前記浮遊拡散領域を覆う領域において前記半導体基板側の部分を残しつつ前記金属膜に接触していた部分を除去する第6工程と
を有することを特徴とする製造方法。 - 前記第6工程において、前記第1層の全面をエッチングすることを特徴とする請求項1に記載の製造方法。
- 前記第6工程において、前記第1層と前記光電変換部との間に、前記半導体基板の上のシリコン窒化膜から形成された絶縁層が配されていることを特徴とする請求項1又は2に記載の製造方法。
- 前記第1工程の前に、前記半導体基板の上の前記シリコン窒化膜から、少なくとも前記光電変換部を覆う前記絶縁層と、前記ゲート電極の側面を覆うサイドスペーサとを形成する形成工程を有し、
前記第1工程では、前記シリコン酸化膜が前記絶縁層および前記サイドスペーサを覆うように形成されることを特徴とする請求項3に記載の製造方法。 - 前記絶縁層は、前記浮遊拡散領域に保持された電荷を増幅して出力するためのMOSトランジスタのゲート電極を覆うことを特徴とする請求項3又は4に記載の製造方法。
- 前記半導体基板は前記光電変換部に隣接する素子分離領域を更に有し、
前記第2工程において、前記素子分離領域の少なくとも一部を覆うように前記第1層を形成し、
前記第6工程において、前記第1層のうち前記素子分離領域を覆う領域において前記半導体基板側の部分を残しつつ前記金属膜に接触していた部分を除去する
ことを特徴とする請求項1乃至5の何れか1項に記載の製造方法。 - 前記第2工程では、前記浮遊拡散領域に保持された電荷を増幅して出力するためのMOSトランジスタのゲート電極を覆うように前記第1層を形成し、
前記第6工程において、前記第1層のうち、前記MOSトランジスタの前記ゲート電極を覆う領域において前記半導体基板側の部分を残しつつ前記金属膜に接触していた部分を除去する
ことを特徴とする請求項1乃至6の何れか1項に記載の製造方法。 - 前記第6工程において、前記第5工程の後に形成されたレジストパターンが前記半導体基板上に位置した状態で、前記第1層のうち前記金属膜に接触していた部分を除去することを特徴とする請求項1乃至7の何れか1項に記載の製造方法。
- 前記第6工程の後に、前記第4工程で行われる前記熱処理よりも高い温度で熱処理を更に行うことを特徴とする請求項1乃至8の何れか1項に記載の製造方法。
Priority Applications (2)
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JP2012006554A JP5963449B2 (ja) | 2012-01-16 | 2012-01-16 | 光電変換装置の製造方法 |
US13/705,499 US9202842B2 (en) | 2012-01-16 | 2012-12-05 | Method for manufacturing photoelectric conversion device |
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JP2012006554A JP5963449B2 (ja) | 2012-01-16 | 2012-01-16 | 光電変換装置の製造方法 |
Publications (3)
Publication Number | Publication Date |
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JP2013145853A JP2013145853A (ja) | 2013-07-25 |
JP2013145853A5 JP2013145853A5 (ja) | 2015-03-05 |
JP5963449B2 true JP5963449B2 (ja) | 2016-08-03 |
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JP2012006554A Expired - Fee Related JP5963449B2 (ja) | 2012-01-16 | 2012-01-16 | 光電変換装置の製造方法 |
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US (1) | US9202842B2 (ja) |
JP (1) | JP5963449B2 (ja) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2015109342A (ja) | 2013-12-04 | 2015-06-11 | キヤノン株式会社 | 撮像装置の製造方法 |
US9608033B2 (en) | 2014-05-12 | 2017-03-28 | Canon Kabushiki Kaisha | Solid-state image sensor, method of manufacturing the same, and camera |
JP6700655B2 (ja) * | 2014-10-30 | 2020-05-27 | キヤノン株式会社 | 光電変換装置および光電変換装置の製造方法 |
US10154222B2 (en) | 2014-11-17 | 2018-12-11 | Tohoku University | Optical sensor, signal reading method therefor, solid-state imaging device, and signal reading method therefor |
WO2016080337A1 (ja) * | 2014-11-17 | 2016-05-26 | 国立大学法人東北大学 | 光センサ及びその信号読み出し方法並びに固体撮像装置及びその信号読み出し方法 |
US9935140B2 (en) | 2015-05-19 | 2018-04-03 | Canon Kabushiki Kaisha | Solid state imaging device, manufacturing method of solid state imaging device, and imaging system |
JP6861471B2 (ja) * | 2015-06-12 | 2021-04-21 | キヤノン株式会社 | 撮像装置およびその製造方法ならびにカメラ |
EP3113224B1 (en) | 2015-06-12 | 2020-07-08 | Canon Kabushiki Kaisha | Imaging apparatus, method of manufacturing the same, and camera |
JP6808481B2 (ja) | 2016-12-27 | 2021-01-06 | キヤノン株式会社 | 半導体装置、システム、および、半導体装置の製造方法 |
JP6656698B1 (ja) * | 2019-05-23 | 2020-03-04 | 国立大学法人徳島大学 | 医療用マイクロ波給電システム、医療用受電回路、ショットキーバリアダイオード及び医療用マイクロ波給電方法 |
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US6333205B1 (en) * | 1999-08-16 | 2001-12-25 | Micron Technology, Inc. | CMOS imager with selectively silicided gates |
JP3782297B2 (ja) | 2000-03-28 | 2006-06-07 | 株式会社東芝 | 固体撮像装置及びその製造方法 |
JP4398917B2 (ja) | 2000-03-28 | 2010-01-13 | 株式会社東芝 | 固体撮像装置及びその製造方法 |
US6448595B1 (en) * | 2000-06-26 | 2002-09-10 | Twin Han Technology Co., Ltd. | Active photodiode CMOS image sensor structure |
JP4025605B2 (ja) * | 2002-08-30 | 2007-12-26 | 富士通株式会社 | 半導体装置及びその製造方法 |
KR100595899B1 (ko) * | 2003-12-31 | 2006-06-30 | 동부일렉트로닉스 주식회사 | 이미지 센서 및 그 제조방법 |
JP2005260076A (ja) | 2004-03-12 | 2005-09-22 | Matsushita Electric Ind Co Ltd | 固体撮像装置及びその製造方法 |
KR100672713B1 (ko) | 2004-06-09 | 2007-01-22 | 동부일렉트로닉스 주식회사 | 씨모스 이미지 센서의 제조방법 |
JP2006191054A (ja) | 2004-12-29 | 2006-07-20 | Dongbuanam Semiconductor Inc | Cmosイメージセンサの製造方法 |
US20080258188A1 (en) * | 2007-04-23 | 2008-10-23 | United Microelectronics Corp. | Metal oxide semiconductor device and method of fabricating the same |
JP5095287B2 (ja) * | 2007-07-18 | 2012-12-12 | パナソニック株式会社 | 固体撮像素子及びその製造方法 |
JP2009283649A (ja) * | 2008-05-22 | 2009-12-03 | Panasonic Corp | 固体撮像装置及びその製造方法 |
JP5558916B2 (ja) | 2009-06-26 | 2014-07-23 | キヤノン株式会社 | 光電変換装置の製造方法 |
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2012
- 2012-01-16 JP JP2012006554A patent/JP5963449B2/ja not_active Expired - Fee Related
- 2012-12-05 US US13/705,499 patent/US9202842B2/en not_active Expired - Fee Related
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US9202842B2 (en) | 2015-12-01 |
JP2013145853A (ja) | 2013-07-25 |
US20130183786A1 (en) | 2013-07-18 |
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