JP2018014643A - 圧電薄膜共振器、フィルタ、デュプレクサ、及び圧電薄膜共振器の製造方法 - Google Patents
圧電薄膜共振器、フィルタ、デュプレクサ、及び圧電薄膜共振器の製造方法 Download PDFInfo
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/173—Air-gaps
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- H—ELECTRICITY
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- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/174—Membranes
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/175—Acoustic mirrors
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- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/70—Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
- H03H9/703—Networks using bulk acoustic wave devices
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- H10N30/00—Piezoelectric or electrostrictive devices
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- H10N30/00—Piezoelectric or electrostrictive devices
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Abstract
【解決手段】基板10と、基板10上に設けられ、第2族元素又は第12族元素と、第4族元素又は第5族元素と、を含有し、厚さ方向の中央側の第1領域14aでは前記第4族元素又は前記第5族元素の濃度が前記第2族元素又は前記第12族元素の濃度よりも高く、前記厚さ方向の端側の第2領域14bでは前記第2族元素又は前記第12族元素の濃度が前記第4族元素又は前記第5族元素の濃度よりも高い窒化アルミニウム膜を含む圧電膜14と、圧電膜14を挟んで対向した下部電極12及び上部電極16と、を備える圧電薄膜共振器。
【選択図】図3
Description
12 下部電極
14 圧電膜
14a 第1領域
14b 第2領域
14c 第3領域
16 上部電極
18 共振領域
20 空隙
22 導入路
24 孔
26 開口
30 犠牲層
40 チャンバー
42 ターゲット
44 ガス供給部
46 真空ポンプ接続部
48 電源
49 磁石
50 音響反射膜
52 音響インピーダンスの高い膜
54 音響インピーダンスの低い膜
60 送信フィルタ
62 受信フィルタ
S1〜S4 直列共振器
P1〜P4 並列共振器
100 圧電薄膜共振器
300 フィルタ
400 デュプレクサ
Claims (9)
- 基板と、
前記基板上に設けられ、第2族元素又は第12族元素と、第4族元素又は第5族元素と、を含有し、厚さ方向の中央側では前記第4族元素又は前記第5族元素の濃度が前記第2族元素又は前記第12族元素の濃度よりも高く、前記厚さ方向の端側では前記第2族元素又は前記第12族元素の濃度が前記第4族元素又は前記第5族元素の濃度よりも高い窒化アルミニウム膜を含む圧電膜と、
前記圧電膜を挟んで対向した下部電極及び上部電極と、を備える圧電薄膜共振器。 - 前記窒化アルミニウム膜は、前記厚さ方向の両方の前記端側で前記第2族元素又は前記第12族元素の濃度が前記第4族元素又は前記第5族元素の濃度よりも高い、請求項1記載の圧電薄膜共振器。
- 前記窒化アルミニウム膜は、前記第2族元素又は前記第12族元素と、前記第4族元素と、含み、
前記第2族元素又は前記第12族元素と、前記第4族元素と、の組み合わせは、マグネシウムとチタンと、カルシウムとチタン、亜鉛とチタン、マグネシウムとジルコニウム、カルシウムとジルコニウム、亜鉛とジルコニウム、マグネシウムとハフニウム、カルシウムとハフニウム、ストロンチウムとハフニウム、又は亜鉛とハフニウムである、請求項1または2記載の圧電薄膜共振器。 - 前記窒化アルミニウム膜は、前記第2族元素又は前記第12族元素と、前記第5族元素と、を含み、
前記第2族元素又は前記第12族元素と、前記第5族元素と、の組み合わせは、マグネシウムとタンタル、マグネシウムとニオブ、マグネシウムとバナジウム、亜鉛とタンタル、亜鉛とニオブ、又は亜鉛とバナジウムである、請求項1または2記載の圧電薄膜共振器。 - 前記窒化アルミニウム膜は、前記下部電極側の前記端側での前記第2族元素又は前記第12族元素と前記第4族元素又は前記第5族元素との合計濃度が前記中央側よりも低い、請求項1から4のいずれか一項記載の圧電薄膜共振器。
- 前記圧電膜は、前記窒化アルミニウム膜と前記下部電極との間に他の元素を含有しない窒化アルミニウム膜を含む、請求項1から5のいずれか一項記載の圧電薄膜共振器。
- 請求項1から6のいずれか一項記載の圧電薄膜共振器を含むフィルタ。
- 請求項7記載のフィルタを含むデュプレクサ。
- 下部電極上に、アルミニウムと、第2族元素又は第12族元素と、第4族元素又は第5族元素と、を含むターゲットを用いたスパッタリング法でスパッタリングパワーを厚さ方向の中央側と端側とで変えることで、前記中央側での前記第4族元素又は前記第5族元素の濃度が前記端側よりも高い窒化アルミニウム膜を含む圧電膜を形成する工程と、
前記圧電膜上に、前記圧電膜を挟んで前記下部電極と対向する上部電極を形成する工程と、を備える圧電薄膜共振器の製造方法。
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