JP5905677B2 - 圧電薄膜共振器およびその製造方法 - Google Patents
圧電薄膜共振器およびその製造方法 Download PDFInfo
- Publication number
- JP5905677B2 JP5905677B2 JP2011169603A JP2011169603A JP5905677B2 JP 5905677 B2 JP5905677 B2 JP 5905677B2 JP 2011169603 A JP2011169603 A JP 2011169603A JP 2011169603 A JP2011169603 A JP 2011169603A JP 5905677 B2 JP5905677 B2 JP 5905677B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- piezoelectric
- insulating film
- piezoelectric film
- lower electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000010409 thin film Substances 0.000 title claims description 68
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 239000010408 film Substances 0.000 claims description 411
- 239000000758 substrate Substances 0.000 claims description 38
- 230000015572 biosynthetic process Effects 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 13
- 239000012535 impurity Substances 0.000 claims description 10
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical group Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 6
- 239000010410 layer Substances 0.000 description 30
- 238000004544 sputter deposition Methods 0.000 description 13
- 230000000052 comparative effect Effects 0.000 description 10
- 238000012986 modification Methods 0.000 description 9
- 230000004048 modification Effects 0.000 description 9
- 238000005530 etching Methods 0.000 description 8
- 239000007789 gas Substances 0.000 description 8
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- 238000007687 exposure technique Methods 0.000 description 4
- 239000011261 inert gas Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 230000001678 irradiating effect Effects 0.000 description 3
- 238000010897 surface acoustic wave method Methods 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 239000000395 magnesium oxide Substances 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 2
- 238000010295 mobile communication Methods 0.000 description 2
- 239000011800 void material Substances 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/021—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the air-gap type
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/023—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the membrane type
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/025—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks comprising an acoustic mirror
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
- H03H2003/0407—Temperature coefficient
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/42—Piezoelectric device making
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Description
12 下部電極
14 第1圧電膜
16 絶縁膜
18 第2圧電膜
20 上部電極
22 共振部
24 空隙
26 導入路
28 孔部
30 開口部
32 犠牲層
34 第1圧電膜の上面
36 絶縁膜の上面
38 低音響インピーダンス膜
40 高音響インピーダンス膜
42 音響多層膜
Claims (8)
- 基板上に設けられた下部電極と、
前記基板上に設けられ、少なくとも2層からなる圧電膜と、
前記圧電膜上に設けられ、前記圧電膜を挟み前記下部電極と対向する領域を有する上部電極と、
前記下部電極と前記上部電極とが対向する領域であって、前記少なくとも2層からなる圧電膜のそれぞれの層の間に設けられ、弾性定数の温度係数が前記少なくとも2層からなる圧電膜に対し逆符号である絶縁膜と、を具備し、
前記絶縁膜の上面は下面よりも平坦であり、
前記少なくとも2層からなる圧電膜のうち、前記絶縁膜の下面と接する面の凹凸は、前記絶縁膜の上面と接する面の凹凸より大きく、
前記少なくとも2層からなる圧電膜のうち、前記下部電極の上面に形成された層の上面は下面よりも凹凸が大きいことを特徴とする圧電薄膜共振器。 - 前記絶縁膜の上面のRMS値は、下面のRMS値に対して30%以上小さいことを特徴とする請求項1記載の圧電薄膜共振器。
- 前記圧電膜は2層からなり、前記絶縁膜は2層の前記圧電膜の間に設けられた1層からなることを特徴とする請求項1または2記載の圧電薄膜共振器。
- 前記絶縁膜は、酸化シリコンを主成分とする絶縁膜であることを特徴とする請求項1から3のいずれか一項記載の圧電薄膜共振器。
- 前記圧電膜は、窒化アルミニウムまたは不純物を添加した窒化アルミニウムであることを特徴とする請求項1から4のいずれか一項記載の圧電薄膜共振器。
- 基板上に下部電極を形成する工程と、
前記下部電極上に、下面よりも上面の凹凸が大きい第1圧電膜を形成する工程と、
前記第1圧電膜上に絶縁膜を形成する工程と、
前記絶縁膜の上面が下面よりも平坦となるように前記絶縁膜の上面を平坦化する工程と、
上面が平坦化された前記絶縁膜上に、前記絶縁膜に接する下面が前記第1圧電膜の前記絶縁膜に接する上面よりも凹凸が小さい第2圧電膜を形成する工程と、
前記第2圧電膜上に、前記第1圧電膜と前記絶縁膜と前記第2圧電膜とを挟み前記下部電極と対向する領域を有するように上部電極を形成する工程と、を有し、
前記第1圧電膜の形成と、前記絶縁膜の形成と、前記絶縁膜の上面の平坦化と、前記第2圧電膜の形成とは、同一真空装置内で、真空を破ることなく連続して行われることを特徴とする圧電薄膜共振器の製造方法。 - 前記絶縁膜の上面の平坦化は、不活性プラズマガスを利用して行われることを特徴とする請求項6記載の圧電薄膜共振器の製造方法。
- 前記第1圧電膜の上面を平坦化する工程を有し、
前記絶縁膜を形成する工程は、上面が平坦化された前記第1圧電膜上に前記絶縁膜を形成することを特徴とする請求項6または7記載の圧電薄膜共振器の製造方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011169603A JP5905677B2 (ja) | 2011-08-02 | 2011-08-02 | 圧電薄膜共振器およびその製造方法 |
SG2012055190A SG187362A1 (en) | 2011-08-02 | 2012-07-25 | Piezoelectric thin-film resonator and method for manufacturing the same |
US13/563,505 US9035536B2 (en) | 2011-08-02 | 2012-07-31 | Piezoelectric thin-film resonator and method for manufacturing the same |
CN201210272191.8A CN102916673B (zh) | 2011-08-02 | 2012-08-01 | 压电薄膜谐振器及其制造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011169603A JP5905677B2 (ja) | 2011-08-02 | 2011-08-02 | 圧電薄膜共振器およびその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013034130A JP2013034130A (ja) | 2013-02-14 |
JP5905677B2 true JP5905677B2 (ja) | 2016-04-20 |
Family
ID=47614927
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011169603A Active JP5905677B2 (ja) | 2011-08-02 | 2011-08-02 | 圧電薄膜共振器およびその製造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US9035536B2 (ja) |
JP (1) | JP5905677B2 (ja) |
CN (1) | CN102916673B (ja) |
SG (1) | SG187362A1 (ja) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9425764B2 (en) | 2012-10-25 | 2016-08-23 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Accoustic resonator having composite electrodes with integrated lateral features |
US9590165B2 (en) | 2011-03-29 | 2017-03-07 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Acoustic resonator comprising aluminum scandium nitride and temperature compensation feature |
US9748918B2 (en) | 2013-02-14 | 2017-08-29 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Acoustic resonator comprising integrated structures for improved performance |
US9444426B2 (en) * | 2012-10-25 | 2016-09-13 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Accoustic resonator having integrated lateral feature and temperature compensation feature |
JP5905677B2 (ja) * | 2011-08-02 | 2016-04-20 | 太陽誘電株式会社 | 圧電薄膜共振器およびその製造方法 |
JP6185292B2 (ja) | 2013-06-10 | 2017-08-23 | 太陽誘電株式会社 | 弾性波デバイス |
JP6205937B2 (ja) * | 2013-07-22 | 2017-10-04 | セイコーエプソン株式会社 | 圧電膜製造方法、振動子製造方法、振動片、振動子、発振器、電子機器及び移動体 |
JP6325799B2 (ja) * | 2013-11-11 | 2018-05-16 | 太陽誘電株式会社 | 圧電薄膜共振器、フィルタおよびデュプレクサ |
JP6371518B2 (ja) * | 2013-12-17 | 2018-08-08 | 太陽誘電株式会社 | 圧電薄膜共振器およびその製造方法、フィルタ並びにデュプレクサ |
CN106062238B (zh) * | 2014-03-03 | 2018-09-04 | 株式会社村田制作所 | 氮化铝压电薄膜及其制造方法、压电材、压电部件 |
JP6594619B2 (ja) * | 2014-11-14 | 2019-10-23 | 太陽誘電株式会社 | 圧電薄膜共振器、フィルタおよびデュプレクサ |
JP6347446B2 (ja) * | 2014-12-11 | 2018-06-27 | 太陽誘電株式会社 | 横結合型多重モードモノリシックフィルタ |
JP6307021B2 (ja) * | 2014-12-19 | 2018-04-04 | 太陽誘電株式会社 | 弾性波デバイス |
US10355668B2 (en) | 2015-01-20 | 2019-07-16 | Taiyo Yuden Co., Ltd. | Acoustic wave device |
JP6397352B2 (ja) * | 2015-02-19 | 2018-09-26 | 太陽誘電株式会社 | 弾性波デバイス |
WO2017070177A1 (en) * | 2015-10-21 | 2017-04-27 | Qorvo Us, Inc. | Resonator structure with enhanced reflection of shear and longitudinal modes of acoustic vibrations |
JP6869831B2 (ja) | 2017-07-03 | 2021-05-12 | 太陽誘電株式会社 | 圧電薄膜共振器およびその製造方法、フィルタ並びにマルチプレクサ |
CN111034038B (zh) * | 2017-09-29 | 2024-02-06 | 株式会社村田制作所 | 压电基板的制造装置和压电基板的制造方法 |
JP7098453B2 (ja) * | 2018-07-17 | 2022-07-11 | 太陽誘電株式会社 | 弾性波共振器、フィルタ並びにマルチプレクサ |
CN111342808B (zh) * | 2018-12-18 | 2023-08-15 | 天津大学 | 基于元素掺杂缩小有效面积的谐振器、滤波器和电子设备 |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3078838A (en) * | 1960-05-06 | 1963-02-26 | Bahco Ab | Heating devices, especially for motor vehicles |
JPS58137317A (ja) | 1982-02-09 | 1983-08-15 | Nec Corp | 圧電薄膜複合振動子 |
JPH01216556A (ja) * | 1988-02-25 | 1989-08-30 | Sony Corp | Al配線の形成方法 |
EP0651449B1 (en) * | 1993-11-01 | 2002-02-13 | Matsushita Electric Industrial Co., Ltd. | Electronic component and method for producing the same |
JP4441843B2 (ja) * | 2001-06-15 | 2010-03-31 | 宇部興産株式会社 | 薄膜音響共振器 |
US6906451B2 (en) * | 2002-01-08 | 2005-06-14 | Murata Manufacturing Co., Ltd. | Piezoelectric resonator, piezoelectric filter, duplexer, communication apparatus, and method for manufacturing piezoelectric resonator |
JP2004048639A (ja) * | 2002-05-17 | 2004-02-12 | Murata Mfg Co Ltd | 圧電共振子及びその製造方法等 |
JP2004221622A (ja) * | 2002-01-08 | 2004-08-05 | Murata Mfg Co Ltd | 圧電共振子、圧電フィルタ、デュプレクサ、通信装置および圧電共振子の製造方法 |
JP2005094735A (ja) * | 2003-08-12 | 2005-04-07 | Murata Mfg Co Ltd | 電子部品およびその製造方法 |
JP2005117313A (ja) | 2003-10-07 | 2005-04-28 | Fujitsu Ltd | 圧電素子およびタッチパネル装置 |
JP2006166419A (ja) | 2004-11-10 | 2006-06-22 | Murata Mfg Co Ltd | 圧電薄膜共振子及びその製造方法 |
WO2006067949A1 (ja) | 2004-12-24 | 2006-06-29 | Murata Manufacturing Co., Ltd. | 圧電薄膜共振子およびその製造方法 |
US20070028692A1 (en) * | 2005-08-05 | 2007-02-08 | Honeywell International Inc. | Acoustic wave sensor packaging for reduced hysteresis and creep |
US7561009B2 (en) | 2005-11-30 | 2009-07-14 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Film bulk acoustic resonator (FBAR) devices with temperature compensation |
JP2008048040A (ja) * | 2006-08-11 | 2008-02-28 | Matsushita Electric Ind Co Ltd | 圧電薄膜共振器およびその製造方法 |
JP2008172713A (ja) * | 2007-01-15 | 2008-07-24 | Hitachi Media Electoronics Co Ltd | 圧電薄膜共振器および圧電薄膜共振器フィルタおよびその製造方法 |
JP5471612B2 (ja) | 2009-06-22 | 2014-04-16 | 日立金属株式会社 | 圧電性薄膜素子の製造方法及び圧電薄膜デバイスの製造方法 |
JP5905677B2 (ja) * | 2011-08-02 | 2016-04-20 | 太陽誘電株式会社 | 圧電薄膜共振器およびその製造方法 |
JP5817830B2 (ja) * | 2011-09-01 | 2015-11-18 | 株式会社村田製作所 | 圧電バルク波装置及びその製造方法 |
-
2011
- 2011-08-02 JP JP2011169603A patent/JP5905677B2/ja active Active
-
2012
- 2012-07-25 SG SG2012055190A patent/SG187362A1/en unknown
- 2012-07-31 US US13/563,505 patent/US9035536B2/en active Active
- 2012-08-01 CN CN201210272191.8A patent/CN102916673B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
CN102916673A (zh) | 2013-02-06 |
CN102916673B (zh) | 2016-02-17 |
US20130033151A1 (en) | 2013-02-07 |
SG187362A1 (en) | 2013-02-28 |
US9035536B2 (en) | 2015-05-19 |
JP2013034130A (ja) | 2013-02-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5905677B2 (ja) | 圧電薄膜共振器およびその製造方法 | |
US9444429B2 (en) | Piezoelectric thin-film resonator, method for fabricating same, filter and duplexer having an interposed film | |
USRE47989E1 (en) | Acoustic wave device | |
JP5957376B2 (ja) | 圧電薄膜共振子 | |
JP3940932B2 (ja) | 薄膜圧電共振器、薄膜圧電デバイスおよびその製造方法 | |
US8330556B2 (en) | Passivation layers in acoustic resonators | |
JP4756461B2 (ja) | 窒化アルミニウム薄膜およびそれを用いた圧電薄膜共振子 | |
KR100477851B1 (ko) | 압전 공진자, 압전 필터, 듀플렉서, 통신 장치 및 압전공진자의 제조 방법 | |
JP5689080B2 (ja) | 圧電薄膜共振子、通信モジュール、通信装置 | |
JP4688070B2 (ja) | 圧電薄膜共振子、圧電薄膜デバイスおよびその製造方法 | |
JP2018014643A (ja) | 圧電薄膜共振器、フィルタ、デュプレクサ、及び圧電薄膜共振器の製造方法 | |
US9929715B2 (en) | Acoustic wave device | |
JP2008211394A (ja) | 共振装置 | |
KR20080101765A (ko) | 압전 박막 공진기 및 필터 | |
CN104660211A (zh) | 声波滤波器和双工器 | |
JP7098453B2 (ja) | 弾性波共振器、フィルタ並びにマルチプレクサ | |
CN107769749B (zh) | 体声波谐振器 | |
JP6869831B2 (ja) | 圧電薄膜共振器およびその製造方法、フィルタ並びにマルチプレクサ | |
JP2007129776A (ja) | 薄膜圧電共振器、薄膜圧電デバイスおよびその製造方法 | |
JP2009290369A (ja) | Baw共振装置 | |
US11316495B2 (en) | Surface acoustic wave device | |
WO2011105313A1 (ja) | 弾性波デバイス | |
CN103825574B (zh) | 声波器件及其制造方法 | |
WO2011086986A1 (ja) | 弾性波デバイス、フィルタ、通信モジュール、通信装置 | |
JP2020014096A (ja) | 弾性波デバイスおよびマルチプレクサ |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20140416 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20141219 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20150106 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150227 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20150728 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150915 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20160308 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20160317 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5905677 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |