JP6535637B2 - 圧電薄膜共振器、フィルタ、デュプレクサ、及び圧電薄膜共振器の製造方法 - Google Patents
圧電薄膜共振器、フィルタ、デュプレクサ、及び圧電薄膜共振器の製造方法 Download PDFInfo
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- 239000010409 thin film Substances 0.000 title claims description 51
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- 229910052749 magnesium Inorganic materials 0.000 claims description 59
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 58
- 229910052782 aluminium Inorganic materials 0.000 claims description 50
- 229910052735 hafnium Inorganic materials 0.000 claims description 50
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 31
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- 229910052725 zinc Inorganic materials 0.000 claims description 25
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 24
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- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 10
- 239000010955 niobium Substances 0.000 claims description 10
- 229910052715 tantalum Inorganic materials 0.000 claims description 10
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 9
- 229910052758 niobium Inorganic materials 0.000 claims description 9
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 8
- 229910052720 vanadium Inorganic materials 0.000 claims description 8
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 7
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052712 strontium Inorganic materials 0.000 claims description 5
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 claims description 4
- 230000008878 coupling Effects 0.000 description 34
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
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- 229910052784 alkaline earth metal Inorganic materials 0.000 description 4
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
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- 238000000206 photolithography Methods 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 229910052703 rhodium Inorganic materials 0.000 description 3
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- 238000007740 vapor deposition Methods 0.000 description 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
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- 229910052741 iridium Inorganic materials 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- 239000000395 magnesium oxide Substances 0.000 description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 2
- 125000004433 nitrogen atom Chemical group N* 0.000 description 2
- 150000003303 ruthenium Chemical class 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
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- 239000011521 glass Substances 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
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- 239000007769 metal material Substances 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
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- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Images
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/173—Air-gaps
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/174—Membranes
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/175—Acoustic mirrors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/70—Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
- H03H9/703—Networks using bulk acoustic wave devices
- H03H9/706—Duplexers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/06—Forming electrodes or interconnections, e.g. leads or terminals
- H10N30/063—Forming interconnections, e.g. connection electrodes of multilayered piezoelectric or electrostrictive parts
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
- H10N30/706—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings characterised by the underlying bases, e.g. substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/87—Electrodes or interconnections, e.g. leads or terminals
- H10N30/872—Interconnections, e.g. connection electrodes of multilayer piezoelectric or electrostrictive devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
- H03H9/58—Multiple crystal filters
- H03H9/60—Electric coupling means therefor
- H03H9/605—Electric coupling means therefor consisting of a ladder configuration
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Description
12 下部電極
14 圧電膜
14a 第1領域
14b 第2領域
14c 第3領域
16 上部電極
18 共振領域
20 空隙
22 導入路
24 孔
26 開口
30 犠牲層
40 チャンバー
42 ターゲット
44 ガス供給部
46 真空ポンプ接続部
48 電源
49 磁石
50 音響反射膜
52 音響インピーダンスの高い膜
54 音響インピーダンスの低い膜
60 送信フィルタ
62 受信フィルタ
S1〜S4 直列共振器
P1〜P4 並列共振器
100 圧電薄膜共振器
300 フィルタ
400 デュプレクサ
Claims (9)
- 基板と、
前記基板上に設けられ、第2族元素又は第12族元素と、第4族元素又は第5族元素と、を含有し、厚さ方向の中央側では前記第4族元素又は前記第5族元素の濃度が前記第2族元素又は前記第12族元素の濃度よりも高く、前記厚さ方向の端側では前記第2族元素又は前記第12族元素の濃度が前記第4族元素又は前記第5族元素の濃度よりも高い窒化アルミニウム膜を含む圧電膜と、
前記圧電膜を挟んで対向した下部電極及び上部電極と、を備える圧電薄膜共振器。 - 前記窒化アルミニウム膜は、前記厚さ方向の両方の前記端側で前記第2族元素又は前記第12族元素の濃度が前記第4族元素又は前記第5族元素の濃度よりも高い、請求項1記載の圧電薄膜共振器。
- 前記窒化アルミニウム膜は、前記第2族元素又は前記第12族元素と、前記第4族元素と、含み、
前記第2族元素又は前記第12族元素と、前記第4族元素と、の組み合わせは、マグネシウムとチタンと、カルシウムとチタン、亜鉛とチタン、マグネシウムとジルコニウム、カルシウムとジルコニウム、亜鉛とジルコニウム、マグネシウムとハフニウム、カルシウムとハフニウム、ストロンチウムとハフニウム、又は亜鉛とハフニウムである、請求項1または2記載の圧電薄膜共振器。 - 前記窒化アルミニウム膜は、前記第2族元素又は前記第12族元素と、前記第5族元素と、を含み、
前記第2族元素又は前記第12族元素と、前記第5族元素と、の組み合わせは、マグネシウムとタンタル、マグネシウムとニオブ、マグネシウムとバナジウム、亜鉛とタンタル、亜鉛とニオブ、又は亜鉛とバナジウムである、請求項1または2記載の圧電薄膜共振器。 - 前記窒化アルミニウム膜は、前記下部電極側の前記端側での前記第2族元素又は前記第12族元素と前記第4族元素又は前記第5族元素との合計濃度が前記中央側よりも低い、請求項1から4のいずれか一項記載の圧電薄膜共振器。
- 前記圧電膜は、前記窒化アルミニウム膜と前記下部電極との間に他の元素を含有しない窒化アルミニウム膜を含む、請求項1から5のいずれか一項記載の圧電薄膜共振器。
- 請求項1から6のいずれか一項記載の圧電薄膜共振器を含むフィルタ。
- 請求項7記載のフィルタを含むデュプレクサ。
- 下部電極上に、アルミニウムと、第2族元素又は第12族元素と、第4族元素又は第5族元素と、を含むターゲットを用いてスパッタリング法でスパッタリングパワーを厚さ方向の中央側と端側で変えることで、前記中央側では前記第4族元素又は前記第5族元素の濃度が前記第2族元素又は前記第12族元素の濃度よりも高く、前記端側では前記第2族元素又は前記第12族元素の濃度が前記第4族元素又は前記第5族元素の濃度よりも高い窒化アルミニウム膜を含む圧電膜を形成する工程と、
前記圧電膜上に、前記圧電膜を挟んで前記下部電極と対向する上部電極を形成する工程と、を備える圧電薄膜共振器の製造方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
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JP2016143660A JP6535637B2 (ja) | 2016-07-21 | 2016-07-21 | 圧電薄膜共振器、フィルタ、デュプレクサ、及び圧電薄膜共振器の製造方法 |
US15/616,080 US10187036B2 (en) | 2016-07-21 | 2017-06-07 | Piezoelectric thin film resonator, filter, duplexer, and method of fabricating piezoelectric thin film resonator |
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JP2016143660A JP6535637B2 (ja) | 2016-07-21 | 2016-07-21 | 圧電薄膜共振器、フィルタ、デュプレクサ、及び圧電薄膜共振器の製造方法 |
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US11411169B2 (en) | 2017-10-16 | 2022-08-09 | Akoustis, Inc. | Methods of forming group III piezoelectric thin films via removal of portions of first sputtered material |
US11411168B2 (en) | 2017-10-16 | 2022-08-09 | Akoustis, Inc. | Methods of forming group III piezoelectric thin films via sputtering |
US11895920B2 (en) | 2016-08-15 | 2024-02-06 | Akoustis, Inc. | Methods of forming group III piezoelectric thin films via removal of portions of first sputtered material |
US11856858B2 (en) * | 2017-10-16 | 2023-12-26 | Akoustis, Inc. | Methods of forming doped crystalline piezoelectric thin films via MOCVD and related doped crystalline piezoelectric thin films |
JP6994247B2 (ja) * | 2018-03-23 | 2022-02-04 | 国立大学法人東北大学 | 圧電体薄膜、圧電素子および圧電発電装置 |
US10505514B2 (en) * | 2018-04-11 | 2019-12-10 | Qualcomm Incorporated | Piezoelectric thin film and bulk acoustic wave filter |
JP7081981B2 (ja) * | 2018-05-28 | 2022-06-07 | 太陽誘電株式会社 | 窒化アルミニウム膜、圧電デバイス、共振器、フィルタおよびマルチプレクサ |
WO2019235080A1 (ja) * | 2018-06-06 | 2019-12-12 | Tdk株式会社 | 圧電薄膜及び圧電薄膜素子 |
WO2020232458A1 (en) * | 2019-05-10 | 2020-11-19 | Akoustis, Inc. | Methods of forming doped crystalline piezoelectric thin films via mocvd and related doped crystalline piezoelectric thin films |
CN111010120A (zh) * | 2019-09-20 | 2020-04-14 | 天津大学 | 具有调节层的体声波谐振器、滤波器和电子设备 |
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