JP2013128267A - 圧電薄膜共振子及び圧電薄膜の製造方法 - Google Patents
圧電薄膜共振子及び圧電薄膜の製造方法 Download PDFInfo
- Publication number
- JP2013128267A JP2013128267A JP2012174032A JP2012174032A JP2013128267A JP 2013128267 A JP2013128267 A JP 2013128267A JP 2012174032 A JP2012174032 A JP 2012174032A JP 2012174032 A JP2012174032 A JP 2012174032A JP 2013128267 A JP2013128267 A JP 2013128267A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- piezoelectric thin
- aluminum nitride
- concentration
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 240
- 238000004519 manufacturing process Methods 0.000 title claims description 18
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims abstract description 156
- 238000009826 distribution Methods 0.000 claims abstract description 36
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 239000010408 film Substances 0.000 claims description 175
- 238000004544 sputter deposition Methods 0.000 claims description 26
- 238000000034 method Methods 0.000 claims description 23
- 239000002131 composite material Substances 0.000 claims description 13
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 7
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 7
- 238000010030 laminating Methods 0.000 claims description 2
- 230000000149 penetrating effect Effects 0.000 claims 2
- 238000013461 design Methods 0.000 abstract description 4
- 230000001681 protective effect Effects 0.000 description 14
- 238000005530 etching Methods 0.000 description 12
- 230000004048 modification Effects 0.000 description 12
- 238000012986 modification Methods 0.000 description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 230000008878 coupling Effects 0.000 description 10
- 238000010168 coupling process Methods 0.000 description 10
- 238000005859 coupling reaction Methods 0.000 description 10
- 229910052814 silicon oxide Inorganic materials 0.000 description 10
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 8
- 239000012670 alkaline solution Substances 0.000 description 7
- 239000003513 alkali Substances 0.000 description 5
- 230000008859 change Effects 0.000 description 5
- 230000007423 decrease Effects 0.000 description 5
- 238000011161 development Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 230000003628 erosive effect Effects 0.000 description 5
- 229910052706 scandium Inorganic materials 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000005284 excitation Effects 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000035515 penetration Effects 0.000 description 3
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02157—Dimensional parameters, e.g. ratio between two dimension parameters, length, width or thickness
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/173—Air-gaps
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/175—Acoustic mirrors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
- H10N30/076—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by vapour phase deposition
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/853—Ceramic compositions
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/021—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the air-gap type
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/025—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks comprising an acoustic mirror
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
- Physical Vapour Deposition (AREA)
Abstract
【解決手段】厚み方向において、Sc濃度が均一ではない濃度分布を有するSc含有窒化アルミニウムからなる圧電薄膜6と、圧電薄膜6を挟んで対向するように第1及び第2電極5,7が設けられており、圧電薄膜6と第1及び第2の電極5,7とからなる圧電振動部を支持している基板2がさらに備えられている、圧電薄膜共振子1。
【選択図】図1
Description
2…基板
3…絶縁膜
4…保護膜
5…第1の電極
6…圧電薄膜
6A…圧電薄膜
6B…圧電薄膜
6C…圧電薄膜
6D…圧電薄膜
6a…窒化アルミニウム膜
6b…Sc含有窒化アルミニウム膜
6c…窒化アルミニウム膜
6d,6f…Sc含有窒化アルミニウム膜
6e…窒化アルミニウム膜
6g…Sc含有窒化アルミニウム膜
6h…窒化アルミニウム膜
7…第2の電極
8…保護膜
9,10…電極パッド
11…フィルタ装置
12…入力端子
13…出力端子
21…スパッタリング装置
22…素子
23…第1のターゲット
24…第2のターゲット
51…圧電薄膜共振子
52…酸化ケイ素膜
61…圧電薄膜共振子
62…音響反射層
62a,62c…高い音響インピーダンス層
62b,62d…低い音響インピーダンス層
71…複合ターゲット
71A…複合ターゲット
72…ターゲット本体
72a…凹部
72b…貫通部
73…Scターゲット
74…ターゲット本体
74a…開口
74b…上面
74c…凹部
74d…下面
P1,P2…並列腕共振子
S1〜S3…直列腕共振子
Claims (12)
- 厚み方向においてSc濃度が均一ではない濃度分布を有するSc含有窒化アルミニウムからなる圧電薄膜と、
前記圧電薄膜を挟んで対向するように設けられた第1及び第2の電極と、
前記圧電薄膜と、前記第1及び第2の電極とからなる圧電振動部を支持している基板とを備えている、圧電薄膜共振子。 - 前記Sc含有窒化アルミニウム膜が、Sc含有濃度が異なる複数の膜を積層してなる積層膜からなる、請求項1に記載の圧電薄膜共振子。
- 前記複数の膜が、Scを含有していない窒化アルミニウム膜と、Scを含有しているSc含有窒化アルミニウム膜とを有する、請求項2に記載の圧電薄膜共振子。
- 前記Sc含有窒化アルミニウム膜において、Sc濃度が厚み方向において連続的に変化している、請求項1に記載の圧電薄膜共振子。
- 前記Sc含有窒化アルミニウム膜において、前記第1及び第2の電極に接する側に比べ、前記Sc含有窒化アルミニウム膜の厚み方向中央において、Sc濃度が高くなっている、請求項1〜4のいずれか1項に記載の圧電薄膜共振子。
- 前記第1の電極が下部電極であり、第2の電極が上部電極であり、前記圧電薄膜の前記上部電極に接する表面部分がScを含有していない窒化アルミニウムからなる、請求項5に記載の圧電薄膜共振子。
- 前記Sc含有窒化アルミニウム膜において、前記第1及び第2の電極に接する側に比べ、前記圧電薄膜の厚み方向中央において、Sc濃度が低くなっている、請求項1〜4のいずれか1項に記載の圧電薄膜共振子。
- 前記複数の膜において、前記第1の電極に接する膜及び前記第2の電極に接する膜が、Sc含有窒化アルミニウム膜からなり、前記圧電薄膜の厚み方向中央にScを含有していない窒化アルミニウム膜が配置されている、請求項3に記載の圧電薄膜共振子。
- 前記Sc含有窒化アルミニウム膜のSc含有濃度が0.5〜24原子%の範囲にある、請求項1〜8のいずれか1項に記載の圧電薄膜共振子。
- Alからなる第1のターゲットと、ScNからなる第2のターゲットとを用い、厚み方向においてSc濃度が均一ではない濃度分布を有するSc含有窒化アルミニウム膜を2元スパッタリング法により成膜する、圧電薄膜の製造方法。
- 少なくとも窒素ガスを含む雰囲気下において、表面に複数の凹部が設けられている、Alからなるターゲット本体と、該Alからなるターゲット本体の前記凹部に埋め込まれており、ScからなるScターゲット部とを有する複合ターゲットを用い、スパッタリング法により厚み方向においてSc濃度が均一ではない濃度分布を有するSc含有窒化アルミニウム膜を成膜する、圧電薄膜の製造方法。
- 少なくとも窒素ガスを含む雰囲気下において、貫通部が設けられているAlからなるターゲット本体と、該Alからなるターゲット本体の前記貫通部に埋め込まれているScとを有する複合ターゲットを用い、スパッタリング法により厚み方向においてSc濃度が均一ではない濃度分布を有するSc含有窒化アルミニウム膜を成膜する、圧電薄膜の製造方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012174032A JP5817673B2 (ja) | 2011-11-18 | 2012-08-06 | 圧電薄膜共振子及び圧電薄膜の製造方法 |
US13/677,347 US9246079B2 (en) | 2011-11-18 | 2012-11-15 | Piezoelectric thin-film resonator and method for producing piezoelectric thin film |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011252915 | 2011-11-18 | ||
JP2011252915 | 2011-11-18 | ||
JP2012174032A JP5817673B2 (ja) | 2011-11-18 | 2012-08-06 | 圧電薄膜共振子及び圧電薄膜の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013128267A true JP2013128267A (ja) | 2013-06-27 |
JP5817673B2 JP5817673B2 (ja) | 2015-11-18 |
Family
ID=48426104
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012174032A Active JP5817673B2 (ja) | 2011-11-18 | 2012-08-06 | 圧電薄膜共振子及び圧電薄膜の製造方法 |
Country Status (2)
Country | Link |
---|---|
US (1) | US9246079B2 (ja) |
JP (1) | JP5817673B2 (ja) |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016504870A (ja) * | 2012-12-21 | 2016-02-12 | エプコス アクチエンゲゼルシャフトEpcos Ag | 積層された2種の異なる圧電材料を備えるbaw部品、当該baw部品用の積層体、及び当該baw部品の製造方法 |
JP2016507939A (ja) * | 2012-12-21 | 2016-03-10 | エプコス アクチエンゲゼルシャフトEpcos Ag | 窒化アルミニウム及びスカンジウムを有したmems部品、及びmems部品の製造方法 |
JP2018014643A (ja) * | 2016-07-21 | 2018-01-25 | 太陽誘電株式会社 | 圧電薄膜共振器、フィルタ、デュプレクサ、及び圧電薄膜共振器の製造方法 |
WO2018135178A1 (ja) * | 2017-01-19 | 2018-07-26 | 株式会社村田製作所 | 圧電素子、及び圧電素子を用いた共振子 |
US10079334B2 (en) | 2012-12-21 | 2018-09-18 | Snaptrack, Inc. | BAW component and method for manufacturing a BAW component |
JP2019207910A (ja) * | 2018-05-28 | 2019-12-05 | 太陽誘電株式会社 | 窒化アルミニウム膜、圧電デバイス、共振器、フィルタおよびマルチプレクサ |
JP2020092322A (ja) * | 2018-12-05 | 2020-06-11 | 太陽誘電株式会社 | 圧電膜およびその製造方法、圧電デバイス、共振器、フィルタ並びにマルチプレクサ |
JP2021034494A (ja) * | 2019-08-22 | 2021-03-01 | 株式会社村田製作所 | 圧電素子 |
JP2021168494A (ja) * | 2016-08-03 | 2021-10-21 | サムソン エレクトロ−メカニックス カンパニーリミテッド. | バルク音響共振器及びこれを含むフィルタ |
WO2022180961A1 (ja) * | 2021-02-24 | 2022-09-01 | 国立研究開発法人産業技術総合研究所 | 窒化物材料およびそれからなる圧電体並びにその圧電体を用いたmemsデバイス、トランジスタ、インバーター、トランスデューサー、sawデバイスおよび強誘電体メモリ |
WO2022202616A1 (ja) * | 2021-03-24 | 2022-09-29 | 株式会社村田製作所 | 弾性波装置 |
WO2022202615A1 (ja) * | 2021-03-24 | 2022-09-29 | 株式会社村田製作所 | 弾性バルク波装置 |
Families Citing this family (59)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8902023B2 (en) | 2009-06-24 | 2014-12-02 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Acoustic resonator structure having an electrode with a cantilevered portion |
US9520856B2 (en) | 2009-06-24 | 2016-12-13 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Acoustic resonator structure having an electrode with a cantilevered portion |
US9673778B2 (en) | 2009-06-24 | 2017-06-06 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Solid mount bulk acoustic wave resonator structure comprising a bridge |
US9602073B2 (en) | 2013-05-31 | 2017-03-21 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Bulk acoustic wave resonator having piezoelectric layer with varying amounts of dopant |
US9450561B2 (en) | 2009-11-25 | 2016-09-20 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Bulk acoustic wave (BAW) resonator structure having an electrode with a cantilevered portion and a piezoelectric layer with varying amounts of dopant |
US9136819B2 (en) | 2012-10-27 | 2015-09-15 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Bulk acoustic wave resonator having piezoelectric layer with multiple dopants |
US9219464B2 (en) | 2009-11-25 | 2015-12-22 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Bulk acoustic wave (BAW) resonator structure having an electrode with a cantilevered portion and a piezoelectric layer with multiple dopants |
US9243316B2 (en) * | 2010-01-22 | 2016-01-26 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Method of fabricating piezoelectric material with selected c-axis orientation |
US9679765B2 (en) | 2010-01-22 | 2017-06-13 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Method of fabricating rare-earth doped piezoelectric material with various amounts of dopants and a selected C-axis orientation |
US8796904B2 (en) | 2011-10-31 | 2014-08-05 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Bulk acoustic resonator comprising piezoelectric layer and inverse piezoelectric layer |
US8962443B2 (en) | 2011-01-31 | 2015-02-24 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Semiconductor device having an airbridge and method of fabricating the same |
US9136818B2 (en) | 2011-02-28 | 2015-09-15 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Stacked acoustic resonator comprising a bridge |
US9425764B2 (en) | 2012-10-25 | 2016-08-23 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Accoustic resonator having composite electrodes with integrated lateral features |
US9154112B2 (en) | 2011-02-28 | 2015-10-06 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Coupled resonator filter comprising a bridge |
US9099983B2 (en) | 2011-02-28 | 2015-08-04 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Bulk acoustic wave resonator device comprising a bridge in an acoustic reflector |
US9203374B2 (en) | 2011-02-28 | 2015-12-01 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Film bulk acoustic resonator comprising a bridge |
US9148117B2 (en) | 2011-02-28 | 2015-09-29 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Coupled resonator filter comprising a bridge and frame elements |
US9083302B2 (en) | 2011-02-28 | 2015-07-14 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Stacked bulk acoustic resonator comprising a bridge and an acoustic reflector along a perimeter of the resonator |
US9444426B2 (en) | 2012-10-25 | 2016-09-13 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Accoustic resonator having integrated lateral feature and temperature compensation feature |
US9490771B2 (en) | 2012-10-29 | 2016-11-08 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Acoustic resonator comprising collar and frame |
US20140174908A1 (en) * | 2011-03-29 | 2014-06-26 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Scandium-aluminum alloy sputtering targets |
US9490418B2 (en) | 2011-03-29 | 2016-11-08 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Acoustic resonator comprising collar and acoustic reflector with temperature compensating layer |
US9490770B2 (en) | 2011-03-29 | 2016-11-08 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Acoustic resonator comprising temperature compensating layer and perimeter distributed bragg reflector |
US9246473B2 (en) | 2011-03-29 | 2016-01-26 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Acoustic resonator comprising collar, frame and perimeter distributed bragg reflector |
US9401692B2 (en) | 2012-10-29 | 2016-07-26 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Acoustic resonator having collar structure |
US9590165B2 (en) | 2011-03-29 | 2017-03-07 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Acoustic resonator comprising aluminum scandium nitride and temperature compensation feature |
US9748918B2 (en) * | 2013-02-14 | 2017-08-29 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Acoustic resonator comprising integrated structures for improved performance |
US9917567B2 (en) * | 2011-05-20 | 2018-03-13 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Bulk acoustic resonator comprising aluminum scandium nitride |
JP5716831B2 (ja) * | 2011-09-01 | 2015-05-13 | 株式会社村田製作所 | 圧電バルク波装置及びその製造方法 |
US9608592B2 (en) | 2014-01-21 | 2017-03-28 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Film bulk acoustic wave resonator (FBAR) having stress-relief |
US9225313B2 (en) | 2012-10-27 | 2015-12-29 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Bulk acoustic wave resonator having doped piezoelectric layer with improved piezoelectric characteristics |
DE102013213935B4 (de) * | 2013-07-16 | 2015-08-20 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zum Abscheiden einer piezoelektrischen AlN-haltigen Schicht |
US9520855B2 (en) | 2014-02-26 | 2016-12-13 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Bulk acoustic wave resonators having doped piezoelectric material and frame elements |
US9455681B2 (en) | 2014-02-27 | 2016-09-27 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Bulk acoustic wave resonator having doped piezoelectric layer |
CN104883149B (zh) * | 2014-02-28 | 2020-06-05 | 安华高科技股份有限公司 | 钪铝合金溅镀目标 |
US10340885B2 (en) | 2014-05-08 | 2019-07-02 | Avago Technologies International Sales Pte. Limited | Bulk acoustic wave devices with temperature-compensating niobium alloy electrodes |
US9735755B2 (en) * | 2015-08-20 | 2017-08-15 | Qorvo Us, Inc. | BAW resonator having lateral energy confinement and methods of fabrication thereof |
US10484796B2 (en) * | 2015-12-25 | 2019-11-19 | Dai-Ichi Seiko Co., Ltd. | Speaker device and method for manufacturing speaker device |
JP6869237B2 (ja) * | 2016-06-07 | 2021-05-12 | Jx金属株式会社 | スパッタリングターゲット及び、その製造方法 |
US10756700B2 (en) | 2016-07-14 | 2020-08-25 | Samsung Electro-Mechanics Co., Ltd. | Bulk acoustic wave resonator device |
US10734968B2 (en) * | 2016-08-26 | 2020-08-04 | Samsung Electro-Mechanics Co., Ltd. | Bulk acoustic resonator and filter including the same |
GB2555835B (en) * | 2016-11-11 | 2018-11-28 | Novosound Ltd | Ultrasound transducer |
US9978621B1 (en) * | 2016-11-14 | 2018-05-22 | Applied Materials, Inc. | Selective etch rate monitor |
US11736088B2 (en) | 2016-11-15 | 2023-08-22 | Global Communication Semiconductors, Llc | Film bulk acoustic resonator with spurious resonance suppression |
MY175654A (en) * | 2016-11-30 | 2020-07-03 | Silterra Malaysia Sdn Bhd | Monolithic integrated device |
US10727809B2 (en) * | 2016-12-15 | 2020-07-28 | Qorvo Us, Inc. | Bulk acoustic wave resonator with multilayer piezoelectric structure |
US11764750B2 (en) | 2018-07-20 | 2023-09-19 | Global Communication Semiconductors, Llc | Support structure for bulk acoustic wave resonator |
KR20200011141A (ko) * | 2018-07-24 | 2020-02-03 | 삼성전기주식회사 | 체적 음향 공진기 |
US11595016B2 (en) * | 2018-10-05 | 2023-02-28 | Samsung Electro-Mechanics Co., Ltd. | Bulk-acoustic wave resonator |
KR102276515B1 (ko) | 2019-02-15 | 2021-07-14 | 삼성전기주식회사 | 체적 음향 공진기 |
DE102019104423B4 (de) * | 2019-02-21 | 2022-03-03 | RF360 Europe GmbH | BAW-Resonator mit einer verbesserten Kristallqualität, HF-Filter, Muliplexer und Herstellungsverfahren |
US11817839B2 (en) | 2019-03-28 | 2023-11-14 | Global Communication Semiconductors, Llc | Single-crystal bulk acoustic wave resonator and method of making thereof |
CN111010131A (zh) * | 2019-06-06 | 2020-04-14 | 天津大学 | 掺杂浓度变化的体声波谐振器、滤波器及电子设备 |
WO2021013660A1 (en) * | 2019-07-19 | 2021-01-28 | Evatec Ag | Piezoelectric coating and deposition process |
US11909373B2 (en) | 2019-10-15 | 2024-02-20 | Global Communication Semiconductors, Llc | Bulk acoustic resonator structures with improved edge frames |
US11942919B2 (en) | 2021-01-11 | 2024-03-26 | Raytheon Company | Strain compensated rare earth group III-nitride heterostructures |
CN113328714B (zh) * | 2021-06-16 | 2024-03-22 | 苏州汉天下电子有限公司 | 压电结构及其制造方法以及包括该压电结构的压电谐振器 |
CN117981060A (zh) * | 2021-09-02 | 2024-05-03 | 应用材料公司 | 钪掺杂的氮化铝的选择性蚀刻 |
CN115276601B (zh) * | 2022-09-29 | 2023-01-06 | 苏州汉天下电子有限公司 | 一种测试用谐振器、制备方法及谐振器的测试方法 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59193272A (ja) * | 1983-04-15 | 1984-11-01 | Daido Steel Co Ltd | スパツタリングにおけるタ−ゲツトおよびスパツタリング方法 |
JPS6442576A (en) * | 1987-08-10 | 1989-02-14 | Fujitsu Ltd | Composite sputtering target |
JP2001211053A (ja) * | 1999-11-17 | 2001-08-03 | Murata Mfg Co Ltd | 圧電共振子、電子部品及び電子機器 |
JP2004095843A (ja) * | 2002-08-30 | 2004-03-25 | Tdk Corp | 電子デバイス用基板および電子デバイス |
JP2006274389A (ja) * | 2005-03-30 | 2006-10-12 | Utec:Kk | スパッタリング装置及びスパッタリング方法 |
JP2009010926A (ja) * | 2007-05-31 | 2009-01-15 | National Institute Of Advanced Industrial & Technology | 圧電体薄膜、圧電体およびそれらの製造方法、ならびに当該圧電体薄膜を用いた圧電体共振子、アクチュエータ素子および物理センサー |
JP2011015148A (ja) * | 2009-07-01 | 2011-01-20 | National Institute Of Advanced Industrial Science & Technology | 圧電体薄膜の製造方法および当該製造方法により製造される圧電体薄膜 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4800989B2 (ja) * | 2006-11-15 | 2011-10-26 | 日本碍子株式会社 | 圧電/電歪材料、圧電/電歪体、及び圧電/電歪素子 |
US7758979B2 (en) * | 2007-05-31 | 2010-07-20 | National Institute Of Advanced Industrial Science And Technology | Piezoelectric thin film, piezoelectric material, and fabrication method of piezoelectric thin film and piezoelectric material, and piezoelectric resonator, actuator element, and physical sensor using piezoelectric thin film |
-
2012
- 2012-08-06 JP JP2012174032A patent/JP5817673B2/ja active Active
- 2012-11-15 US US13/677,347 patent/US9246079B2/en active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59193272A (ja) * | 1983-04-15 | 1984-11-01 | Daido Steel Co Ltd | スパツタリングにおけるタ−ゲツトおよびスパツタリング方法 |
JPS6442576A (en) * | 1987-08-10 | 1989-02-14 | Fujitsu Ltd | Composite sputtering target |
JP2001211053A (ja) * | 1999-11-17 | 2001-08-03 | Murata Mfg Co Ltd | 圧電共振子、電子部品及び電子機器 |
JP2004095843A (ja) * | 2002-08-30 | 2004-03-25 | Tdk Corp | 電子デバイス用基板および電子デバイス |
JP2006274389A (ja) * | 2005-03-30 | 2006-10-12 | Utec:Kk | スパッタリング装置及びスパッタリング方法 |
JP2009010926A (ja) * | 2007-05-31 | 2009-01-15 | National Institute Of Advanced Industrial & Technology | 圧電体薄膜、圧電体およびそれらの製造方法、ならびに当該圧電体薄膜を用いた圧電体共振子、アクチュエータ素子および物理センサー |
JP2011015148A (ja) * | 2009-07-01 | 2011-01-20 | National Institute Of Advanced Industrial Science & Technology | 圧電体薄膜の製造方法および当該製造方法により製造される圧電体薄膜 |
Cited By (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10079334B2 (en) | 2012-12-21 | 2018-09-18 | Snaptrack, Inc. | BAW component and method for manufacturing a BAW component |
JP2016507939A (ja) * | 2012-12-21 | 2016-03-10 | エプコス アクチエンゲゼルシャフトEpcos Ag | 窒化アルミニウム及びスカンジウムを有したmems部品、及びmems部品の製造方法 |
US9831851B2 (en) | 2012-12-21 | 2017-11-28 | Snaptrack, Inc. | BAW component, lamination for a BAW component, and method for manufacturing a BAW component |
JP2016504870A (ja) * | 2012-12-21 | 2016-02-12 | エプコス アクチエンゲゼルシャフトEpcos Ag | 積層された2種の異なる圧電材料を備えるbaw部品、当該baw部品用の積層体、及び当該baw部品の製造方法 |
US10097152B2 (en) | 2012-12-21 | 2018-10-09 | Snaptrack, Inc. | MEMS component having AlN and Sc and method for manufacturing a MEMS component |
JP2018014643A (ja) * | 2016-07-21 | 2018-01-25 | 太陽誘電株式会社 | 圧電薄膜共振器、フィルタ、デュプレクサ、及び圧電薄膜共振器の製造方法 |
US10187036B2 (en) | 2016-07-21 | 2019-01-22 | Taiyo Yuden Co., Ltd. | Piezoelectric thin film resonator, filter, duplexer, and method of fabricating piezoelectric thin film resonator |
JP7302143B2 (ja) | 2016-08-03 | 2023-07-04 | サムソン エレクトロ-メカニックス カンパニーリミテッド. | バルク音響共振器及びこれを含むフィルタ |
JP2021168494A (ja) * | 2016-08-03 | 2021-10-21 | サムソン エレクトロ−メカニックス カンパニーリミテッド. | バルク音響共振器及びこれを含むフィルタ |
WO2018135178A1 (ja) * | 2017-01-19 | 2018-07-26 | 株式会社村田製作所 | 圧電素子、及び圧電素子を用いた共振子 |
JPWO2018135178A1 (ja) * | 2017-01-19 | 2019-06-27 | 株式会社村田製作所 | 圧電素子、及び圧電素子を用いた共振子 |
US11495726B2 (en) | 2017-01-19 | 2022-11-08 | Murata Manufacturing Co, Ltd. | Piezoelectric element, and resonator using piezoelectric element |
JP2019207910A (ja) * | 2018-05-28 | 2019-12-05 | 太陽誘電株式会社 | 窒化アルミニウム膜、圧電デバイス、共振器、フィルタおよびマルチプレクサ |
US11482662B2 (en) | 2018-05-28 | 2022-10-25 | Taiyo Yuden Co., Ltd. | Aluminum nitride film, piezoelectric device, resonator, filter, and multiplexer |
JP7081981B2 (ja) | 2018-05-28 | 2022-06-07 | 太陽誘電株式会社 | 窒化アルミニウム膜、圧電デバイス、共振器、フィルタおよびマルチプレクサ |
JP2020092322A (ja) * | 2018-12-05 | 2020-06-11 | 太陽誘電株式会社 | 圧電膜およびその製造方法、圧電デバイス、共振器、フィルタ並びにマルチプレクサ |
JP7269719B2 (ja) | 2018-12-05 | 2023-05-09 | 太陽誘電株式会社 | 圧電膜およびその製造方法、圧電デバイス、共振器、フィルタ並びにマルチプレクサ |
JP7143824B2 (ja) | 2019-08-22 | 2022-09-29 | 株式会社村田製作所 | 圧電素子 |
US11605775B2 (en) | 2019-08-22 | 2023-03-14 | Murata Manufacturing Co., Ltd. | Piezoelectric device |
JP2021034494A (ja) * | 2019-08-22 | 2021-03-01 | 株式会社村田製作所 | 圧電素子 |
WO2022180961A1 (ja) * | 2021-02-24 | 2022-09-01 | 国立研究開発法人産業技術総合研究所 | 窒化物材料およびそれからなる圧電体並びにその圧電体を用いたmemsデバイス、トランジスタ、インバーター、トランスデューサー、sawデバイスおよび強誘電体メモリ |
WO2022202616A1 (ja) * | 2021-03-24 | 2022-09-29 | 株式会社村田製作所 | 弾性波装置 |
WO2022202615A1 (ja) * | 2021-03-24 | 2022-09-29 | 株式会社村田製作所 | 弾性バルク波装置 |
Also Published As
Publication number | Publication date |
---|---|
US20130127300A1 (en) | 2013-05-23 |
JP5817673B2 (ja) | 2015-11-18 |
US9246079B2 (en) | 2016-01-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5817673B2 (ja) | 圧電薄膜共振子及び圧電薄膜の製造方法 | |
WO2021077717A1 (zh) | 电极具有空隙层的体声波谐振器、滤波器及电子设备 | |
US9461616B2 (en) | Bulk wave resonator having an aluminum nitride film containing scandium and ScAlN protective layer | |
US9748923B2 (en) | Elastic wave device and manufacturing method for same | |
JP6300123B2 (ja) | 音響共振器及びその製造方法 | |
JP5957376B2 (ja) | 圧電薄膜共振子 | |
US10938367B2 (en) | Solidly mounted layer thin film device with grounding layer | |
US9368712B2 (en) | Surface acoustic wave device | |
CN111010130B (zh) | 带温补层和电学层的体声波谐振器、滤波器及电子设备 | |
CN113328723B (zh) | 一种弹性波谐振器及其制备方法 | |
KR101901696B1 (ko) | 체적 음향 공진기 및 이를 포함하는 필터 | |
US8629598B2 (en) | Boundary acoustic wave device | |
JP6185292B2 (ja) | 弾性波デバイス | |
WO2013065488A1 (ja) | 圧電薄膜共振子、フィルタ装置及びデュプレクサ | |
KR102310917B1 (ko) | 탄성파 장치 | |
JP2010278830A (ja) | ラダー型フィルタ及びその製造方法並びにデュプレクサ | |
JP2018125696A (ja) | 圧電薄膜共振器、フィルタおよびマルチプレクサ | |
CN115549639B (zh) | 一种声波滤波器 | |
WO2019096015A1 (en) | Surface acoustic wave device | |
JP2009290369A (ja) | Baw共振装置 | |
JP2007235711A (ja) | 弾性表面波装置 | |
JP5390431B2 (ja) | 弾性波デバイス | |
CN115037263A (zh) | 一种横向激励的薄膜体声波谐振器及滤波器 | |
CN109889182B (zh) | 一种柔性体声波滤波器 | |
US20240113682A1 (en) | Acoustic wave device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20140206 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20141117 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20141125 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150122 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20150507 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150729 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20150806 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20150901 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20150914 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5817673 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |