JP2015054986A - 窒化アルミニウム膜の成膜方法、弾性波デバイスの製造方法、及び窒化アルミニウム膜の製造装置 - Google Patents
窒化アルミニウム膜の成膜方法、弾性波デバイスの製造方法、及び窒化アルミニウム膜の製造装置 Download PDFInfo
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- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 title claims abstract description 66
- 238000004519 manufacturing process Methods 0.000 title claims description 22
- 238000000151 deposition Methods 0.000 title abstract 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 46
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 39
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 23
- 239000011777 magnesium Substances 0.000 claims description 29
- 238000000034 method Methods 0.000 claims description 28
- 229910052749 magnesium Inorganic materials 0.000 claims description 22
- 238000004544 sputter deposition Methods 0.000 claims description 19
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- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 2
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- 229910052741 iridium Inorganic materials 0.000 description 4
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- 229910052703 rhodium Inorganic materials 0.000 description 4
- 229910052707 ruthenium Inorganic materials 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
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- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
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- 229910052594 sapphire Inorganic materials 0.000 description 3
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
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- 238000007740 vapor deposition Methods 0.000 description 1
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- Physical Vapour Deposition (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
【解決手段】本発明は、窒素ガスを含む雰囲気下で、アルミニウムの他に少なくとも2つの元素を含むターゲット22を用いてスパッタリングを行う窒化アルミニウム膜の成膜方法である。本発明によれば、アルミニウム及び窒素の他に少なくとも2つの元素を含む窒化アルミニウム膜を、1つのターゲットによって成膜することができるため、組成を安定させて成膜することができる。
【選択図】図2
Description
12 窒化アルミニウム膜
20 チャンバ
22 ターゲット
24 ガス供給部
30 FBAR
32 基板
34 下部電極
36 圧電膜
38 上部電極
40 共振部
42〜42b 空隙
50 音響反射膜
60 弾性表面波デバイス
62 支持基板
64 圧電膜
66 金属膜
70 ラム波デバイス
72 第1支持基板
74 第2支持基板
76 圧電膜
78 空隙
79 電極
80 ラダー型フィルタ
100 分波器
Claims (10)
- 窒素ガスを含む雰囲気下で、アルミニウムの他に少なくとも2つの元素を含むターゲットを用いてスパッタリングを行うことを特徴とする窒化アルミニウム膜の成膜方法。
- 前記ターゲットは、前記少なくとも2つの元素として2価元素と4価元素とを含むことを特徴とする請求項1記載の窒化アルミニウム膜の成膜方法。
- 前記ターゲットは、前記2価元素としてマグネシウム及び亜鉛の少なくとも一方を含み、前記4価元素としてチタン、ジルコニウム、及びハフニウムの少なくとも1つを含むことを特徴とする請求項2記載の窒化アルミニウム膜の成膜方法。
- 前記窒化アルミニウム膜は、元素がドープされていない窒化アルミニウム膜よりも、圧電定数d33の値が大きいことを特徴とする請求項2または3記載の窒化アルミニウム膜の成膜方法。
- 前記窒化アルミニウム膜は、前記少なくとも2つの元素がアルミニウムサイトに置換されていることを特徴とする請求項1から4のいずれか一項記載の窒化アルミニウム膜の成膜方法。
- 前記窒化アルミニウム膜は、c軸配向性を有する結晶構造を有することを特徴とする請求項1から5のいずれか一項記載の窒化アルミニウム膜の成膜方法。
- 請求項1から6のいずれか一項記載の窒化アルミニウム膜の成膜方法を有することを特徴とする弾性波デバイスの製造方法。
- 前記弾性波デバイスは、弾性表面波デバイス、バルク弾性波デバイス、又はラム波デバイスであることを特徴とする請求項7記載の弾性波デバイスの製造方法。
- 前記弾性波デバイスは、フィルタまたは分波器であることを特徴とする請求項7または8記載の弾性波デバイスの製造方法。
- アルミニウムの他に少なくとも2つの元素を含むターゲットを備え、窒素ガスを含む雰囲気下で前記ターゲットをスパッタリングすることを特徴とする窒化アルミニウム膜の製造装置。
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