JP2015501526A - オプトエレクトロニクス半導体チップの製造方法およびオプトエレクトロニクス半導体チップ - Google Patents
オプトエレクトロニクス半導体チップの製造方法およびオプトエレクトロニクス半導体チップ Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 115
- 230000005693 optoelectronics Effects 0.000 title claims abstract description 31
- 238000004519 manufacturing process Methods 0.000 title claims description 17
- 239000000758 substrate Substances 0.000 claims abstract description 109
- 238000000034 method Methods 0.000 claims abstract description 83
- 230000006911 nucleation Effects 0.000 claims abstract description 79
- 238000010899 nucleation Methods 0.000 claims abstract description 79
- 238000004544 sputter deposition Methods 0.000 claims abstract description 40
- 239000000463 material Substances 0.000 claims abstract description 28
- 150000004767 nitrides Chemical class 0.000 claims abstract description 8
- 230000000873 masking effect Effects 0.000 claims description 23
- 230000004927 fusion Effects 0.000 claims description 22
- 230000005855 radiation Effects 0.000 claims description 16
- 238000000151 deposition Methods 0.000 claims description 15
- 230000008021 deposition Effects 0.000 claims description 14
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 12
- 239000001301 oxygen Substances 0.000 claims description 12
- 229910052760 oxygen Inorganic materials 0.000 claims description 12
- 229910002704 AlGaN Inorganic materials 0.000 claims description 7
- 229910052733 gallium Inorganic materials 0.000 claims description 7
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 6
- 238000007740 vapor deposition Methods 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- 230000007423 decrease Effects 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- 239000012298 atmosphere Substances 0.000 claims description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 2
- 239000000395 magnesium oxide Substances 0.000 claims description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 2
- 238000007788 roughening Methods 0.000 claims 1
- 238000001947 vapour-phase growth Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 289
- 229910002601 GaN Inorganic materials 0.000 description 21
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 13
- 229910052782 aluminium Inorganic materials 0.000 description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 10
- 238000010586 diagram Methods 0.000 description 9
- 239000002019 doping agent Substances 0.000 description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910002804 graphite Inorganic materials 0.000 description 6
- 239000010439 graphite Substances 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 229910052732 germanium Inorganic materials 0.000 description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 4
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 238000003631 wet chemical etching Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- PWKWDCOTNGQLID-UHFFFAOYSA-N [N].[Ar] Chemical compound [N].[Ar] PWKWDCOTNGQLID-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- -1 nitride compound Chemical class 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
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Abstract
Description
− 成長基板を形成するステップと、
− 成長基板の上にスパッタリングによってIII族窒化物核形成層を形成するステップと、
− 核形成層の上または上方に、活性層を有するIII族窒化物半導体積層体を成長させるステップと、
を、好ましくは記載した順序において含んでいる。
本特許出願は、独国特許出願第102011114671.0号の優先権を主張し、この文書の開示内容は参照によって本明細書に組み込まれている。
Claims (14)
- オプトエレクトロニクス半導体チップ(10)を製造する方法であって、
− 成長基板(1)を形成するステップと、
− 前記成長基板(1)の上にIII族窒化物核形成層(3)をスパッタリングによって形成するステップであって、前記成長基板(1)の材料が、前記核形成層(3)の材料とは異なる、ステップと、
− 前記核形成層(3)の上に、活性層(2a)を有するIII族窒化物半導体積層体(2)を成長させるステップと、
を含んでいる、方法。 - 前記核形成層(3)と前記成長基板(1)との間に犠牲層(31)が形成され、前記犠牲層(31)がアルミニウム酸化物を含んでおり、前記成長基板(1)が前記半導体積層体(2)から分離されるとき、前記犠牲層(31)が湿式化学的に少なくとも部分的に分解される、
請求項1に記載の方法。 - 前記成長基板(1)が前記半導体積層体(2)の側の面において前記半導体積層体(2)から剥離されるとき、前記成長基板(1)が破壊されない、
請求項2に記載の方法。 - 前記核形成層(3)が、10nm〜1000nmの範囲内(両端値を含む)、特に50nm〜200nmの範囲内(両端値を含む)の厚さを有し、
前記核形成層(3)が、AlN系であり、前記成長基板(1)に直接堆積される、
請求項1から請求項3のいずれかに記載の方法。 - 前記成長基板(1)とは反対側の前記半導体積層体(2)の面にキャリア基板(11)が取り付けられ、その後、前記成長基板(1)がレーザリフトオフ法によって除去される、
請求項1から請求項4のいずれかに記載の方法。 - 前記成長基板(1)および前記核形成層(3)が、リフトオフ法において使用されるレーザ放射に対して透過性であり、
レーザ放射の結果として、前記核形成層(3)と前記半導体積層体(2)との間の界面、もしくは、前記核形成層(3)と成長層(8)との間の界面、またはその両方において、材料が分解される、
請求項5に記載の方法。 - 前記核形成層(3)に酸素が混合され、酸素の重量割合が0.1%〜10%の範囲内(両端値を含む)である、
請求項1から請求項6のいずれかに記載の方法。 - 前記核形成層(3)における酸素の割合が、前記成長基板(1)から離れる方向に単調に減少する、
請求項7に記載の方法。 - 前記成長層(8)が、前記核形成層(3)の上に、スパッタリングによって、または気相成長法によって、直接堆積され、
前記成長層(8)がGaN系である、
請求項1から請求項8のいずれかに記載の方法。 - 前記成長層(8)の上に、以下の層、すなわち、
− シリコン窒化物、シリコン酸化物、またはマグネシウム酸化物系であるマスキング層(6)であって、50%〜90%の範囲内(両端値を含む)の被覆率で前記成長層(8)を覆う、マスキング層(6)と、
− GaN系である融合層(7)と、
− AlGaNから構成される1層または複数層の中央層(9)であって、複数層の中央層(9)の場合、2層の隣接する中央層(9)の間にそれぞれのGaN層(5)を成長させる、1層または複数層の中央層(9)と、
− AlInGaN系またはInGaN系である前記半導体積層体(2a,2b,2c)と、
が、それぞれの下層の上に直接的に、示した順序において形成される、
請求項1から請求項9のいずれかに記載の方法。 - 前記スパッタリングが、550℃〜900℃の範囲内(両端値を含む)の温度において、1×10−3mbar〜1×10−2mbarの範囲内(両端値を含む)の圧力において、行われる、
請求項1から請求項10のいずれかに記載の方法。 - スパッタリング時の成長速度が、0.03nm/s〜0.5nm/sの範囲内(両端値を含む)に設定され、前記スパッタリングが、ArおよびN2を含んだ雰囲気下で行われ、Ar:N2の比が1:2であり、この場合の公差が最大で15%である、
請求項1から請求項11のいずれかに記載の方法。 - 前記核形成層(3)がスパッタリング堆積装置(A)の中で形成され、前記半導体積層体(2)が、前記スパッタリング堆積装置(A)とは異なる気相成長炉(B)の中で成長し、
前記スパッタリング堆積装置(A)にガリウムが存在しない、
請求項1から請求項12のいずれかに記載の方法。 - 放射を生成する目的で設けられている活性層(2a)を有し、かつ、少なくとも1層のn型ドープ層(2b)を有する半導体積層体(2)、を備えたオプトエレクトロニクス半導体チップ(10)であって、
− 前記n型ドープ層(2b)が前記活性層(2a)に隣接しており、
− 前記半導体積層体(2)がAlInGaN系またはInGaN系であり、
− キャリア基板(11)とは反対側の前記n型ドープ層(2b)の面に、AlGaNから構成されており、かつそれぞれが25nm〜200nmの範囲内(両端値を含む)の厚さを有する1層または複数層の中央層(9)が成長しており、
− キャリア基板(11)とは反対側の前記中央層(9)の面、または複数の前記中央層(9)のうちの1つの中央層の面に、ドープされたGaNまたはドープされていないGaNから構成された、300nm〜1.2μmの範囲内(両端値を含む)の厚さを有する融合層(7)が形成されており、
− 粗面化部(13)が、前記融合層(7)から前記n型ドープ層(2b)まで、または前記n型ドープ層(2b)の中まで達しており、
− 前記半導体積層体(2)の放射出口領域が、部分的に前記融合層(7)によって形成されており、
− 前記中央層(9)が部分的に露出しており、
− 前記半導体チップ(10)が、請求項1から請求項13のいずれかに記載の方法によって製造される、
オプトエレクトロニクス半導体チップ(10)。
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