JP2013527974A - カーボンナノチューブ及びナノワイヤー複合体を含有する透明導電性コーティングを含む電子デバイス、及びその製造方法 - Google Patents
カーボンナノチューブ及びナノワイヤー複合体を含有する透明導電性コーティングを含む電子デバイス、及びその製造方法 Download PDFInfo
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Abstract
【解決手段】太陽電池は、ガラス基材と、前記ガラス基材上に直接又は間接的に配置された第1のCNTをベースとする導電層と、前記第1のCNTをベースとする導電層と接触している第1半導体層と、前記第1半導体層上に直接又は間接的に配置された少なくとも1層の吸収層と、前記少なくとも1層の吸収層上に直接又は間接的に配置された第2半導体層と、前記第2半導体層と接触している第2のCNTをベースとする導電層と、前記第2のCNTをベースとする導電層上に直接又は間接的に配置されたバック接点と、を備える。
【選択図】図9
Description
・平均場近似、ただし、ナノチューブの数密度は平均数密度である。
・平均束D/L<<1
・接点には相関関係がない(全体的にランダムである)。
Claims (31)
- ガラス基材と、
前記ガラス基材上に直接又は間接的に配置された第1のCNTをベースとする導電層と、
前記第1のCNTをベースとする導電層と接触している第1半導体層と、
前記第1半導体層上に直接又は間接的に配置された少なくとも1層の吸収層と、
前記少なくとも1層の吸収層上に直接又は間接的に配置された第2半導体層と、
前記第2半導体層と接触している第2のCNTをベースとする導電層と、
前記第2のCNTをベースとする導電層上に直接又は間接的に配置されたバック接点と、
を備える、太陽電池。 - 前記基材の、前記第1のCNTをベースとする導電層とは反対側の表面に設けられた反射防止コーティングを更に含む、請求項1に記載の太陽電池。
- 前記第1半導体層がn型半導体層であり、そして前記第1のCNTをベースとする層がn型ドーパントでドーピング処理される、請求項1に記載の太陽電池。
- 前記第2半導体層がp型半導体層であり、そして前記第2のCNTをベースとする層がp型ドーパントでドーピング処理される、請求項3に記載の太陽電池。
- 前記ガラス基材と前記第1のCNTをベースとする層とに挟持された亜鉛ドープされたスズ酸化物層を更に含む、請求項4に記載の太陽電池。
- 前記第1半導体層及び/又は第2半導体層がポリマー材料を含む、請求項1に記載の太陽電池。
- 基材と、
少なくとも1層の光起電薄膜層と、
第1電極及び第2電極と、
第1のCNTをベースとする透明導電層及び第2のCNTをベースとする透明導電層と、
を備え、
前記第1及び前記第2のCNTをベースとする層がそれぞれ、n型及びp型ドーパントでドーピング処理される、光起電デバイス。 - ガラス基材と、
前記ガラス基材上に直接又は間接的に供給された第1のCNTをベースとする透明導電層と、
前記ガラス基材と実質上平行でかつ離間した状態にある変形可能な箔と、
前記変形可能な箔の上に直接又は間接的に供給された第2のCNTをベースとする透明導電層と、
を備える、タッチパネルサブアセンブリ。 - 前記第1及び/又は第2のCNTをベースとする層がパターニングされている、請求項8に記載のタッチパネルサブアセンブリ。
- 前記変形可能な箔と前記ガラス基材との間に配置された複数のピラーと、
前記サブアセンブリの周辺部にある少なくとも1つのエッジシールと、
を更に含む、請求項9に記載のタッチパネルサブアセンブリ。 - 前記変形可能な箔がPET箔である、請求項10に記載のタッチパネルサブアセンブリ。
- 前記第1及び/又は第2のCNTをベースとする層のシート抵抗が500オーム/平方未満である、請求項8に記載のタッチパネルサブアセンブリ。
- 前記第1及び/又は第2のCNTをベースとする層のシート抵抗が300オーム/平方未満である、請求項8に記載のタッチパネルサブアセンブリ。
- 請求項8に記載のタッチパネルサブアセンブリと、
前記タッチパネルサブアセンブリの前記基材の、前記変形可能な箔とは反対側の表面に接続されたディスプレイと、
を備える、タッチパネル装置。 - 前記ディスプレイがLCDディスプレイである、請求項14に記載のタッチパネル装置。
- 前記タッチパネル装置が容量方式タッチパネル装置である、請求項15に記載のタッチパネル装置。
- 前記タッチパネル装置が抵抗性タッチパネル装置である、請求項15に記載のタッチパネル装置。
- 基材で支持されたCNTをベースとする層を含むデータ線/バス線であって、
前記CNTをベースとする層の一部をイオンビーム/プラズマ照射処理すること及び/又はH*でエッチングすることにより、当該部分の導電性を低下させる、データ線/バス線。 - 前記当該部分が導電性を示さない、請求項18に記載のデータ線/バス線。
- 前記基材がガラス基材である、請求項18に記載のデータ線/バス線。
- 前記基材がシリコンウェハである、請求項18に記載のデータ線/バス線。
- 前記当該部分が、前記イオンビーム/プラズマ照射処理すること及び/又は前記H*でエッチングすることによって少なくとも部分的に除去される、請求項18に記載のデータ線/バス線。
- 電子デバイスの製造方法であって、
基材を供給する工程と、
前記基材上にCNTをベースとする層を形成する工程と、
前記CNTをベースとする層をドーピング処理する工程と、
前記CNTをベースとする層を、イオンビーム/プラズマ照射及びH*でのエッチングのうちの一方で選択的にパターニングする工程と、
を含む、前記方法。 - 前記CNTをベースとする層の少なくとも一部を、パラジウム含有溶液及び/又は銀含有溶液を用いて合金化又は金属化する工程を更に含む、請求項23に記載の方法。
- 前記パターニングを行うことで、前記CNTをベースとする層の一部の導電性を低下させる及び/又は前記一部を除去する、請求項24に記載の方法。
- 前記パターニングの前に前記CNTをベースとする層の前記一部の上に保護マスクを供給する工程を更に含む、請求項25に記載の方法。
- 前記保護マスクがフォトレジスト材料を含む、請求項26に記載の方法。
- 前記保護マスクを除去する工程を更に含む、請求項27に記載の方法。
- 冷蔵又は冷凍装置用の物品の製造方法であって、
実質上平行でかつ離間した状態にある第1ガラス基材及び第2ガラス基材を供給する工程であって、前記第1基材を前記物品の内側に供給し、そして前記第2基材を物品の外側に供給する工程と、
1つ以上の透明導電性コーティング(transparent conductive coatings:TCCs)をそれぞれ、前記第1基材及び/又は前記第2基材の1つ以上の主要表面に堆積させる工程と、
少なくとも前記第1基材及び前記第2基材を熱的に強化する工程と、
を含み、
前記TCCがそれぞれ少なくとも1層のCNT含有層を含む、冷蔵又は冷凍装置用の物品の製造方法。 - 少なくとも1層の前記CNT含有層を電源に接続することで、運転中に少なくとも1層の前記CNT含有層が前記電源から電流を受け取って前記物品の曇り除去及び/又は凍結防止を選択的に行う工程を更に含む、請求項29に記載の方法。
- 窓の外部表面についた水分に敏感な少なくとも第1検出コンデンサ及び第2検出コンデンサを備える検出回路であって、前記検出コンデンサーがそれぞれ、少なくとも1層のCNTをベースとする層を含む検出回路を備える、レインセンサーであって、
前記検出回路が更に、第1検出コンデンサ及び第2検出コンデンサのうち少なくとも1つの充電及び放電の少なくとも一方を模倣する少なくとも1つのミミックコンデンサも備えており、
書き込みパルスが、少なくとも前記第1検出コンデンサを充電させ、そして消去パルスが前記第1検出コンデンサ及び前記ミミックコンデンサをそれぞれ実質的に放電させ、
前記窓の前記外部表面上の前記第1検出コンデンサの検出範囲に雨が当たると、前記ミミックコンデンサの領域には雨が当たっていなくても、前記ミミックコンデンサの出力電極での電圧が、前記第1検出コンデンサの出力電極での電圧変動に比例した形で変動し、
前記ミミックコンデンサの前記出力電極からの出力信号に基づいて雨が検出され、ここで、前記出力信号は、少なくとも前記書き込みパルスの終点から前記消去パルスの始点までの間に読み取られるものであり、及び
前記ミミックコンデンサを前記検出コンデンサから物理的に分離し、並びに前記書き込みパルスが、前記第1検出コンデンサを充電させるが、前記第2検出コンデンサを充電させず、しかも前記ミミックコンデンサをも充電させる、レインセンサー。
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US8604332B2 (en) | 2013-12-10 |
KR101861862B1 (ko) | 2018-06-29 |
RU2015128832A (ru) | 2015-11-10 |
CN102823012B (zh) | 2016-12-07 |
EP2543087A1 (en) | 2013-01-09 |
RU2560031C2 (ru) | 2015-08-20 |
MX2012010132A (es) | 2012-11-23 |
TWI541828B (zh) | 2016-07-11 |
JP5936209B2 (ja) | 2016-06-22 |
US20120327024A1 (en) | 2012-12-27 |
JP2015038727A (ja) | 2015-02-26 |
JP5693616B2 (ja) | 2015-04-01 |
EP2543087B1 (en) | 2020-01-01 |
WO2011109123A1 (en) | 2011-09-09 |
US20110214728A1 (en) | 2011-09-08 |
KR20130058664A (ko) | 2013-06-04 |
US8609975B2 (en) | 2013-12-17 |
TW201135751A (en) | 2011-10-16 |
RU2012142175A (ru) | 2014-04-27 |
BR112012022222A2 (pt) | 2016-07-05 |
CN102823012A (zh) | 2012-12-12 |
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