JP2018060787A - 電極及びこれを含む有機発光素子、液晶表示装置及び有機発光表示装置 - Google Patents
電極及びこれを含む有機発光素子、液晶表示装置及び有機発光表示装置 Download PDFInfo
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- JP2018060787A JP2018060787A JP2017181859A JP2017181859A JP2018060787A JP 2018060787 A JP2018060787 A JP 2018060787A JP 2017181859 A JP2017181859 A JP 2017181859A JP 2017181859 A JP2017181859 A JP 2017181859A JP 2018060787 A JP2018060787 A JP 2018060787A
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- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 23
- 239000002019 doping agent Substances 0.000 claims abstract description 49
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims abstract description 46
- 229920001940 conductive polymer Polymers 0.000 claims abstract description 40
- 239000000203 mixture Substances 0.000 claims abstract description 39
- 229910021387 carbon allotrope Inorganic materials 0.000 claims abstract description 31
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 30
- 239000010931 gold Substances 0.000 claims abstract description 28
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims abstract description 24
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910052737 gold Inorganic materials 0.000 claims abstract description 14
- 229910052751 metal Inorganic materials 0.000 claims abstract description 12
- 239000002184 metal Substances 0.000 claims abstract description 12
- 239000002923 metal particle Substances 0.000 claims abstract description 12
- 229910052763 palladium Inorganic materials 0.000 claims abstract description 12
- 239000011669 selenium Substances 0.000 claims abstract description 12
- 239000000126 substance Substances 0.000 claims abstract description 11
- 239000002070 nanowire Substances 0.000 claims abstract description 10
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 10
- 229910052697 platinum Inorganic materials 0.000 claims abstract description 8
- 229910017052 cobalt Inorganic materials 0.000 claims abstract description 7
- 239000010941 cobalt Substances 0.000 claims abstract description 7
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052741 iridium Inorganic materials 0.000 claims abstract description 7
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052762 osmium Inorganic materials 0.000 claims abstract description 7
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 claims abstract description 7
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052711 selenium Inorganic materials 0.000 claims abstract description 6
- 239000010408 film Substances 0.000 claims description 41
- 239000004020 conductor Substances 0.000 claims description 39
- 239000000758 substrate Substances 0.000 claims description 37
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 30
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 30
- 229910052709 silver Inorganic materials 0.000 claims description 25
- 239000004332 silver Substances 0.000 claims description 25
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 claims description 20
- 229910021389 graphene Inorganic materials 0.000 claims description 20
- 229920001197 polyacetylene Polymers 0.000 claims description 20
- -1 polyphenylene Polymers 0.000 claims description 19
- 239000002952 polymeric resin Substances 0.000 claims description 18
- 229920003002 synthetic resin Polymers 0.000 claims description 18
- 239000010409 thin film Substances 0.000 claims description 16
- 238000002347 injection Methods 0.000 claims description 15
- 239000007924 injection Substances 0.000 claims description 15
- 229910052782 aluminium Inorganic materials 0.000 claims description 14
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 14
- 125000005842 heteroatom Chemical group 0.000 claims description 12
- 230000005525 hole transport Effects 0.000 claims description 12
- 239000011734 sodium Substances 0.000 claims description 11
- 239000011777 magnesium Substances 0.000 claims description 10
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 claims description 9
- GKWLILHTTGWKLQ-UHFFFAOYSA-N 2,3-dihydrothieno[3,4-b][1,4]dioxine Chemical compound O1CCOC2=CSC=C21 GKWLILHTTGWKLQ-UHFFFAOYSA-N 0.000 claims description 8
- 239000002041 carbon nanotube Substances 0.000 claims description 8
- 229910021393 carbon nanotube Inorganic materials 0.000 claims description 8
- 229920000123 polythiophene Polymers 0.000 claims description 8
- 229920000767 polyaniline Polymers 0.000 claims description 7
- 229920000414 polyfuran Polymers 0.000 claims description 7
- 229920000069 polyphenylene sulfide Polymers 0.000 claims description 7
- 229920000128 polypyrrole Polymers 0.000 claims description 7
- 229910052708 sodium Inorganic materials 0.000 claims description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 6
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 5
- 229920000265 Polyparaphenylene Polymers 0.000 claims description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 5
- 229910052749 magnesium Inorganic materials 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 5
- 239000002074 nanoribbon Substances 0.000 claims description 5
- 238000007789 sealing Methods 0.000 claims description 5
- 229920000329 polyazepine Polymers 0.000 claims description 4
- 229920000323 polyazulene Polymers 0.000 claims description 4
- XWUCFAJNVTZRLE-UHFFFAOYSA-N 7-thiabicyclo[2.2.1]hepta-1,3,5-triene Chemical compound C1=C(S2)C=CC2=C1 XWUCFAJNVTZRLE-UHFFFAOYSA-N 0.000 claims description 3
- UJOBWOGCFQCDNV-UHFFFAOYSA-N Carbazole Natural products C1=CC=C2C3=CC=CC=C3NC2=C1 UJOBWOGCFQCDNV-UHFFFAOYSA-N 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 229920001088 polycarbazole Polymers 0.000 claims description 3
- 229920002098 polyfluorene Polymers 0.000 claims description 3
- 229920000417 polynaphthalene Polymers 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 88
- 238000002310 reflectometry Methods 0.000 description 16
- 238000000034 method Methods 0.000 description 15
- 102100036464 Activated RNA polymerase II transcriptional coactivator p15 Human genes 0.000 description 12
- 101000713904 Homo sapiens Activated RNA polymerase II transcriptional coactivator p15 Proteins 0.000 description 12
- 229910004444 SUB1 Inorganic materials 0.000 description 12
- 239000002904 solvent Substances 0.000 description 12
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 11
- 238000002474 experimental method Methods 0.000 description 11
- 229910052750 molybdenum Inorganic materials 0.000 description 11
- 239000011733 molybdenum Substances 0.000 description 11
- 239000010936 titanium Substances 0.000 description 10
- 238000002834 transmittance Methods 0.000 description 10
- 239000011651 chromium Substances 0.000 description 8
- 239000010949 copper Substances 0.000 description 8
- 238000000576 coating method Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 229920005989 resin Polymers 0.000 description 7
- 239000011347 resin Substances 0.000 description 7
- 238000001878 scanning electron micrograph Methods 0.000 description 7
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 6
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 6
- 230000008901 benefit Effects 0.000 description 6
- 229910052738 indium Inorganic materials 0.000 description 6
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 6
- 239000000843 powder Substances 0.000 description 6
- 229910052719 titanium Inorganic materials 0.000 description 6
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 5
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 5
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 5
- 229920000144 PEDOT:PSS Polymers 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 238000005245 sintering Methods 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 4
- 229910001316 Ag alloy Inorganic materials 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 4
- 239000000470 constituent Substances 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 238000002156 mixing Methods 0.000 description 4
- 239000011368 organic material Substances 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 239000002356 single layer Substances 0.000 description 4
- 238000004528 spin coating Methods 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- 229910017008 AsF 6 Inorganic materials 0.000 description 3
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 3
- 229910052779 Neodymium Inorganic materials 0.000 description 3
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000002042 Silver nanowire Substances 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- 239000002318 adhesion promoter Substances 0.000 description 3
- UBSJOWMHLJZVDJ-UHFFFAOYSA-N aluminum neodymium Chemical compound [Al].[Nd] UBSJOWMHLJZVDJ-UHFFFAOYSA-N 0.000 description 3
- 125000004432 carbon atom Chemical group C* 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000006185 dispersion Substances 0.000 description 3
- 238000004299 exfoliation Methods 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 3
- 229920000553 poly(phenylenevinylene) Polymers 0.000 description 3
- 229920001467 poly(styrenesulfonates) Polymers 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000000779 smoke Substances 0.000 description 3
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 3
- MIOPJNTWMNEORI-GMSGAONNSA-N (S)-camphorsulfonic acid Chemical compound C1C[C@@]2(CS(O)(=O)=O)C(=O)C[C@@H]1C2(C)C MIOPJNTWMNEORI-GMSGAONNSA-N 0.000 description 2
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 2
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 2
- 229910020366 ClO 4 Inorganic materials 0.000 description 2
- 101000785063 Homo sapiens Serine-protein kinase ATM Proteins 0.000 description 2
- 101000597183 Homo sapiens Telomere length regulation protein TEL2 homolog Proteins 0.000 description 2
- 101001057127 Homo sapiens Transcription factor ETV7 Proteins 0.000 description 2
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 239000004734 Polyphenylene sulfide Substances 0.000 description 2
- 229910001260 Pt alloy Inorganic materials 0.000 description 2
- 229910004438 SUB2 Inorganic materials 0.000 description 2
- 101100311330 Schizosaccharomyces pombe (strain 972 / ATCC 24843) uap56 gene Proteins 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- 102100039580 Transcription factor ETV6 Human genes 0.000 description 2
- 102100027263 Transcription factor ETV7 Human genes 0.000 description 2
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical compound CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 description 2
- 229910052783 alkali metal Inorganic materials 0.000 description 2
- 150000001340 alkali metals Chemical class 0.000 description 2
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 description 2
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical class C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 239000011575 calcium Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-terpineol Natural products CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 235000011187 glycerol Nutrition 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- 239000000178 monomer Substances 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 230000033116 oxidation-reduction process Effects 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 101150018444 sub2 gene Proteins 0.000 description 2
- 229940116411 terpineol Drugs 0.000 description 2
- FYSNRJHAOHDILO-UHFFFAOYSA-N thionyl chloride Chemical compound ClS(Cl)=O FYSNRJHAOHDILO-UHFFFAOYSA-N 0.000 description 2
- 125000002088 tosyl group Chemical group [H]C1=C([H])C(=C([H])C([H])=C1C([H])([H])[H])S(*)(=O)=O 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- WYTZZXDRDKSJID-UHFFFAOYSA-N (3-aminopropyl)triethoxysilane Chemical compound CCO[Si](OCC)(OCC)CCCN WYTZZXDRDKSJID-UHFFFAOYSA-N 0.000 description 1
- DAFHKNAQFPVRKR-UHFFFAOYSA-N (3-hydroxy-2,2,4-trimethylpentyl) 2-methylpropanoate Chemical compound CC(C)C(O)C(C)(C)COC(=O)C(C)C DAFHKNAQFPVRKR-UHFFFAOYSA-N 0.000 description 1
- YJUUZFWMKJBVFJ-UHFFFAOYSA-N 1,3-dimethylimidazolidin-4-one Chemical compound CN1CN(C)C(=O)C1 YJUUZFWMKJBVFJ-UHFFFAOYSA-N 0.000 description 1
- BNHGVULTSGNVIX-UHFFFAOYSA-N 1-(2-ethoxyethoxy)ethanol Chemical compound CCOCCOC(C)O BNHGVULTSGNVIX-UHFFFAOYSA-N 0.000 description 1
- SHRGCOIDGUJGJI-UHFFFAOYSA-N 1-(3-methoxypropoxy)propan-1-ol Chemical compound CCC(O)OCCCOC SHRGCOIDGUJGJI-UHFFFAOYSA-N 0.000 description 1
- DERRBYAQLSWULJ-UHFFFAOYSA-N 1-methoxypentan-1-ol Chemical compound CCCCC(O)OC DERRBYAQLSWULJ-UHFFFAOYSA-N 0.000 description 1
- CUDYYMUUJHLCGZ-UHFFFAOYSA-N 2-(2-methoxypropoxy)propan-1-ol Chemical compound COC(C)COC(C)CO CUDYYMUUJHLCGZ-UHFFFAOYSA-N 0.000 description 1
- NGNBDVOYPDDBFK-UHFFFAOYSA-N 2-[2,4-di(pentan-2-yl)phenoxy]acetyl chloride Chemical compound CCCC(C)C1=CC=C(OCC(Cl)=O)C(C(C)CCC)=C1 NGNBDVOYPDDBFK-UHFFFAOYSA-N 0.000 description 1
- 125000000022 2-aminoethyl group Chemical group [H]C([*])([H])C([H])([H])N([H])[H] 0.000 description 1
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 1
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 1
- YIWUKEYIRIRTPP-UHFFFAOYSA-N 2-ethylhexan-1-ol Chemical compound CCCCC(CC)CO YIWUKEYIRIRTPP-UHFFFAOYSA-N 0.000 description 1
- OXYZDRAJMHGSMW-UHFFFAOYSA-N 3-chloropropyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)CCCCl OXYZDRAJMHGSMW-UHFFFAOYSA-N 0.000 description 1
- KNTKCYKJRSMRMZ-UHFFFAOYSA-N 3-chloropropyl-dimethoxy-methylsilane Chemical compound CO[Si](C)(OC)CCCCl KNTKCYKJRSMRMZ-UHFFFAOYSA-N 0.000 description 1
- XDLMVUHYZWKMMD-UHFFFAOYSA-N 3-trimethoxysilylpropyl 2-methylprop-2-enoate Chemical compound CO[Si](OC)(OC)CCCOC(=O)C(C)=C XDLMVUHYZWKMMD-UHFFFAOYSA-N 0.000 description 1
- 125000000590 4-methylphenyl group Chemical group [H]C1=C([H])C(=C([H])C([H])=C1*)C([H])([H])[H] 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- LCGLNKUTAGEVQW-UHFFFAOYSA-N Dimethyl ether Chemical compound COC LCGLNKUTAGEVQW-UHFFFAOYSA-N 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- REYJJPSVUYRZGE-UHFFFAOYSA-N Octadecylamine Chemical compound CCCCCCCCCCCCCCCCCCN REYJJPSVUYRZGE-UHFFFAOYSA-N 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 1
- IHWJXGQYRBHUIF-UHFFFAOYSA-N [Ag].[Pt] Chemical compound [Ag].[Pt] IHWJXGQYRBHUIF-UHFFFAOYSA-N 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 229920005822 acrylic binder Polymers 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 125000001931 aliphatic group Chemical group 0.000 description 1
- 150000001338 aliphatic hydrocarbons Chemical class 0.000 description 1
- 125000003545 alkoxy group Chemical group 0.000 description 1
- 150000005215 alkyl ethers Chemical class 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- ZIXLDMFVRPABBX-UHFFFAOYSA-N alpha-methylcyclopentanone Natural products CC1CCCC1=O ZIXLDMFVRPABBX-UHFFFAOYSA-N 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 239000003125 aqueous solvent Substances 0.000 description 1
- 150000001491 aromatic compounds Chemical class 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000007833 carbon precursor Substances 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- BGTOWKSIORTVQH-UHFFFAOYSA-N cyclopentanone Chemical compound O=C1CCCC1 BGTOWKSIORTVQH-UHFFFAOYSA-N 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 description 1
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 description 1
- SZXQTJUDPRGNJN-UHFFFAOYSA-N dipropylene glycol Chemical compound OCCCOCCCO SZXQTJUDPRGNJN-UHFFFAOYSA-N 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- KWKXNDCHNDYVRT-UHFFFAOYSA-N dodecylbenzene Chemical compound CCCCCCCCCCCCC1=CC=CC=C1 KWKXNDCHNDYVRT-UHFFFAOYSA-N 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- FWDBOZPQNFPOLF-UHFFFAOYSA-N ethenyl(triethoxy)silane Chemical compound CCO[Si](OCC)(OCC)C=C FWDBOZPQNFPOLF-UHFFFAOYSA-N 0.000 description 1
- NKSJNEHGWDZZQF-UHFFFAOYSA-N ethenyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)C=C NKSJNEHGWDZZQF-UHFFFAOYSA-N 0.000 description 1
- WOXXJEVNDJOOLV-UHFFFAOYSA-N ethenyl-tris(2-methoxyethoxy)silane Chemical compound COCCO[Si](OCCOC)(OCCOC)C=C WOXXJEVNDJOOLV-UHFFFAOYSA-N 0.000 description 1
- 125000005678 ethenylene group Chemical group [H]C([*:1])=C([H])[*:2] 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- SBRXLTRZCJVAPH-UHFFFAOYSA-N ethyl(trimethoxy)silane Chemical compound CC[Si](OC)(OC)OC SBRXLTRZCJVAPH-UHFFFAOYSA-N 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- IFZUFHWISBKFJP-UHFFFAOYSA-N n'-[4-[dimethoxy(methyl)silyl]oxybutyl]ethane-1,2-diamine Chemical compound CO[Si](C)(OC)OCCCCNCCN IFZUFHWISBKFJP-UHFFFAOYSA-N 0.000 description 1
- 239000002106 nanomesh Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 229920001225 polyester resin Polymers 0.000 description 1
- 239000004645 polyester resin Substances 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 239000011970 polystyrene sulfonate Substances 0.000 description 1
- 229960002796 polystyrene sulfonate Drugs 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- HNJBEVLQSNELDL-UHFFFAOYSA-N pyrrolidin-2-one Chemical compound O=C1CCCN1 HNJBEVLQSNELDL-UHFFFAOYSA-N 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 150000003839 salts Chemical group 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 125000001424 substituent group Chemical group 0.000 description 1
- HXJUTPCZVOIRIF-UHFFFAOYSA-N sulfolane Chemical compound O=S1(=O)CCCC1 HXJUTPCZVOIRIF-UHFFFAOYSA-N 0.000 description 1
- 125000001273 sulfonato group Chemical group [O-]S(*)(=O)=O 0.000 description 1
- 125000000542 sulfonic acid group Chemical group 0.000 description 1
- 238000001308 synthesis method Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- YODZTKMDCQEPHD-UHFFFAOYSA-N thiodiglycol Chemical compound OCCSCCO YODZTKMDCQEPHD-UHFFFAOYSA-N 0.000 description 1
- 229950006389 thiodiglycol Drugs 0.000 description 1
- JOXIMZWYDAKGHI-UHFFFAOYSA-N toluene-4-sulfonic acid Chemical compound CC1=CC=C(S(O)(=O)=O)C=C1 JOXIMZWYDAKGHI-UHFFFAOYSA-N 0.000 description 1
- JXUKBNICSRJFAP-UHFFFAOYSA-N triethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CCO[Si](OCC)(OCC)CCCOCC1CO1 JXUKBNICSRJFAP-UHFFFAOYSA-N 0.000 description 1
- ZIBGPFATKBEMQZ-UHFFFAOYSA-N triethylene glycol Chemical compound OCCOCCOCCO ZIBGPFATKBEMQZ-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
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Abstract
【解決手段】本発明の一実施形態にかかる電極は、導電性物質及び仕事関数が5.0eV以上であるドーパントを含む。導電性物質は、反射率が80%以上である金属粒子、炭素同素体、導電性高分子または金属ナノワイヤーのうち、いずれか一つまたはこれらの混合物で、仕事関数が5.0eV以上であるドーパントは、パラジウム(Pd)、ニッケル(Ni)、白金(Pt)、セレニウム(Se)、金(Au)、コバルト(Co)、イリジウム(Ir)またはオスミウム(Os)のうち、いずれか一つまたはこれらの混合物である。
【選択図】図5
Description
本発明の一実施形態にかかる導電性物質は、電極の導電性を表す役割を果たし、反射率が90%以上である金属粒子、炭素同素体、導電性高分子または金属ナノワイヤーを使用することができる。
本発明の一実施形態によれば、電極の仕事関数を増加させるために、仕事関数が5.0eV以上であるドーパントを含む。仕事関数が5.0eV以上であるドーパントは、パラジウム(Pd)、ニッケル(Ni)、白金(Pt)、セレニウム(Se)、金(Au)、コバルト(Co)、イリジウム(Ir)またはオスミウム(Os)を例に挙げることができる。パラジウム(Pd)の仕事関数は、5.22〜5.6eV、ニッケル(Ni)の仕事関数は5.04〜5.35eV、白金(Pt)の仕事関数は5.12〜5.93eV、セレニウム(Se)の仕事関数は5.9eV、金(Au)の仕事関数は5.1〜5.47eV、コバルト(Co)の仕事関数は5.0eV、イリジウム(Ir)の仕事関数は5.0〜5.67eV、そしてオスミウム(Os)の仕事関数は5.93eVである。本発明の一実施形態にかかる仕事関数が5.0eV以上であるドーパントには、前述のドーパントのうち、少なくとも1種または2種以上の混合物を使用することができる。
本発明の溶媒は、前述の導電性物質を分散させ、コーティングされる組成物の粘度を調節するための用途として使用される。溶媒は、親水性または疏水性溶媒を使用することができる。親水性溶媒の例には、水;エタノール、メタノール、イソプロピルアルコール、ブタノール、2−エチルヘキシルアルコール、メトキシペンタノール、ブトキシエタノール、エトキシエトキシエタノール、ブトキシエトキシエタノール、メトキシプロポキシプロパノール、テキサノール(texanol)、アルファ−テルピネオール(α−terpineol)のようなテルピネオールなどのアルコール類;テトラヒドロフラン(THF);グリセロール、アルキレングリコール、例えば、エチレングリコール、トリエチレングリコール、ポリエチレングリコール、プロピレングリコール、ジプロピレングリコール、ジヘキシレングリコールまたはこれらのアルキルエーテル(一例として、プロピレングリコールメチルエーテル(PGME)、ジエチレングリコールブチルエーテル、ジエチレングリコールエチルエーテル、ジプロピレングリコールメチルエーテル、ジヘキシレングリコールエチルエーテル);グリセリン、N−メチルピロリドン(N−methyl−2−pyrrolidinone、NMP)、2-ピロリドン、アセチルアセトン、1,3-ジメチルイミダゾリノン、チオジグリコール、ジメチルスルホキシド(dimethyl sulfoxid,DMSO)、N,N−ジメチルアセトアミド(N,N−dimethyl acetamide,DMAc))、ジメチルホルムアミド(dimethylformamide,DMF))、スルホラン、ジエタノールアミン、トリエタノールアミンより選択される有機溶媒を単独で使用するか、またはこれらのうち、2種以上の混合物を使用することができる。
本発明の一実施形態にかかる電極組成物は、高分子樹脂をさらに含むことができる。高分子樹脂は、導電性物質を接着、結束または分散する役割を果たす。高分子樹脂は、アクリル系樹脂、ポリイミド樹脂、フェノール樹脂、カルド界樹脂、スチレン樹脂、ノボラック樹脂、またはポリエステル樹脂のうち、1種または2種以上の混合物でありうる。また、これらの樹脂は、酸基またはエポキシ基を含有した化合物でありうる。
本発明の一実施形態にかかる電極組成物は、接着増進剤(adhesion promoter)またはレベリング剤などの添加剤をさらに含むことができる。
図5は、第1の実施形態にかかる有機発光素子を示した断面図で、図6は、本発明の第2の実施形態にかかる有機発光表示装置を示した断面図で、図7は、本発明の第3の実施形態にかかる有機発光表示装置を示した断面図であり、図8は、本発明の第4の実施形態にかかる液晶表示装置を示した断面図である。
銀粉末が68重量%を占める銀ペースト100重量%に0.3重量%のパラジウム粉末を混合して、電極組成物を製造した。基板上にスピンコーティング法でコーティングし200℃で熱処理して電極を形成した。このとき、パラジウム粉末の含量比を0.6及び2重量%で別にして、追加に電極をさらに形成した。
銀粉末が68重量%を占める銀ペースト100重量%に0、0.3、0.6及び2重量%のパラジウム粉末をそれぞれ混合して、電極組成物を製造した。基板上に電極組成物をそれぞれスピンコーティング法でコーティングし、200℃で熱処理して電極を形成した。
<比較例>
基板上にアノードでITO電極を蒸着し、ITO電極上に正孔輸送層、発光層、電子輸送層、電子注入層及びカソードであるアルミニウム電極を順次に形成して、素子を製造した。このとき、ITO電極の仕事関数は、4.7eVであった。
基板上に銀ナノワイヤー1重量%が分散された炭素ナノチューブ分散液にPEDOT:PSS導電性高分子を混合し、2重量%のパラジウム粉末を混合して、電極組成物を製造した。基板上に電極組成物をスピンコーティング法でコーティングし、200℃で熱処理してアノード電極を形成した。アノード電極上に正孔輸送層、発光層、電子輸送層、電子注入層及びカソードであるアルミニウム電極を順次に形成して素子を製造した。このとき、製造された電極の仕事関数は、5.0eVであった。
ANO 第1電極
EML 有機膜層
CAT 第2電極
Claims (20)
- 導電性物質及び仕事関数が5.0eV以上であるドーパントを含む電極。
- 前記導電性物質は、反射率が80%以上である金属粒子、炭素同素体、導電性高分子または金属ナノワイヤーのうち、いずれか一つまたはこれらの混合物である請求項1に記載の電極。
- 前記反射率が80%以上である金属粒子は、ナトリウム(Na)、銀(Ag)、アルミニウム(Al)、マグネシウム(Mg)、錫(Sn)または金(Au)のうち、いずれか一つまたはこれらの混合物である請求項2に記載の電極。
- 前記炭素同素体は、還元型酸化グラフェン(rGO)、非酸化グラフェン(graphene)、グラフェンナノリボンまたは炭素ナノチューブ(CNT)のうち、いずれか一つまたはこれらの混合物である請求項2に記載の電極。
- 前記仕事関数が5.0eV以上であるドーパントは、パラジウム(Pd)、ニッケル(Ni)、白金(Pt)、セレニウム(Se)、金(Au)、コバルト(Co)、イリジウム(Ir)またはオスミウム(Os)のうち、いずれか一つまたはこれらの混合物である請求項1に記載の電極。
- 前記電極の仕事関数は、4.8eV以上である請求項1に記載の電極。
- 前記導電性高分子は、ポリフルオレン(polyfluorene)、ポリフェニレン(polyphenylene)、ポリピレン(polypyrene)、ポリアズレン(polyazulene)、ポリナフタレン(polynaphthalene)、ポリアセチレン(polyacetylene,PAC)、ポリ−p−フェニレンビニレン(poly(p−phenylene vinylene,PPV)のように、ヘテロ原子を含まない導電性高分子;ポリピロール(polypyrrole,PPY)、ポリカルバゾール(polycarbazole)、ポリインドール(polyindole)、ポリアゼピン(polyzepine)、ポリチエニレンビニレン(poly(thienylene vinylene)、ポリアニリン(polyaniline,PANI)などのように、ヘテロ原子として窒素(N)を含む導電性高分子;ポリチオフェン(poly(thiophene),PT)、ポリ(p−フェニレンスルフィド(poly(p−phenylenesulfide,PPS)、ポリ(3,4−エチレンジオキシチオフェン(poly(3,4−ethylenedioxy thiophene,PEDOT)のように、ヘテロ原子として黄(S)を含む導電性高分子;ポリフラン(polyfuran)のように、ヘテロ原子として酸素(O)を含む導電性高分子またはこれらの導電性高分子に他の物質がドーピングされている導電性物質のうち、いずれか一つまたはこれらの混合物である請求項1に記載の電極。
- 前記電極は、高分子樹脂をさらに含む請求項1に記載の電極。
- 導電性物質及び仕事関数が5.0eV以上であるドーパントを有する第1電極と、
前記第1電極上の発光層を有する有機膜層と、
前記有機膜層上の第2電極とを含む有機発光素子。 - 前記導電性物質は、反射率が80%以上である金属粒子、炭素同素体、導電性高分子または金属ナノワイヤーである請求項9に記載の有機発光素子。
- 前記反射率が80%以上である金属粒子は、ナトリウム(Na)、銀(Ag)、アルミニウム(Al)、マグネシウム(Mg)、錫(Sn)または金(Au)のうち、いずれか一つまたはこれらの混合物である請求項10に記載の有機発光素子。
- 前記炭素同素体は、還元型酸化グラフェン(rGO)、非酸化グラフェン(graphene)、グラフェンナノリボンまたは炭素ナノチューブ(CNT)のうち、いずれか一つまたはこれらの混合物である請求項10に記載の有機発光素子。
- 前記仕事関数が5.0eV以上であるドーパントは、パラジウム(Pd)、ニッケル(Ni)、白金(Pt)、セレニウム(Se)、金(Au)、コバルト(Co)、イリジウム(Ir)またはオスミウム(Os)のうち、いずれか一つまたはこれらの混合物である請求項9に記載の有機発光素子。
- 前記第1電極の仕事関数は、4.8eV以上である請求項9に記載の有機発光素子。
- 前記導電性高分子は、ポリフルオレン(polyfluorene)、ポリフェニレン(polyphenylene)、ポリピレン(polypyrene)、ポリアズレン(polyazulene)、ポリナフタレン(polynaphthalene)、ポリアセチレン(polyacetylene,PAC)、ポリ−p−フェニレンビニレン(poly(p−phenylene vinylene,PPV)のように、ヘテロ原子を含まない導電性高分子;ポリピロール(polypyrrole,PPY)、ポリカルバゾール(polycarbazole)、ポリインドール(polyindole)、ポリアゼピン(polyzepine)、ポリチエニレンビニレン(poly(thienylene vinylene)、ポリアニリン(polyaniline,PANI)などのように、ヘテロ原子として窒素(N)を含む導電性高分子;ポリチオフェン(poly(thiophene),PT)、ポリ(p−フェニレンスルフィド(poly(p−phenylenesulfide,PPS)、ポリ(3,4−エチレンジオキシチオフェン(poly(3,4−ethylenedioxy thiophene,PEDOT)のように、ヘテロ原子として黄(S)を含む導電性高分子;ポリフラン(polyfuran)のように、ヘテロ原子として酸素(O)を含む導電性高分子またはこれらの導電性高分子に他の物質がドーピングされている導電性物質のうち、いずれか一つまたはこれらの混合物である請求項9に記載の有機発光素子。
- 前記第1電極は、反射電極または透明電極である請求項9に記載の有機発光素子。
- 前記有機膜層は、正孔輸送層、電子輸送層、電子注入層をさらに含み、
前記第1電極は、前記正孔輸送層と接する請求項9に記載の有機発光素子。 - 前記第1電極は、高分子樹脂をさらに含む請求項9に記載の有機発光素子。
- 薄膜トランジスタを含む第1基板と、
前記第1基板と対向する第2基板と、
前記薄膜トランジスタ上に位置し、前記薄膜トランジスタに電気的に接続する請求項1ないし8のうち、いずれか1項に記載の電極と、
前記第1基板と前記第2基板との間に位置する液晶層とを含む液晶表示装置。 - 薄膜トランジスタを含む基板と、
前記薄膜トランジスタ上に位置し、前記薄膜トランジスタに電気的に接続する請求項9ないし18のうち、いずれか1項に記載の有機発光素子と、
前記有機発光素子上の封止層とを含む有機発光表示装置。
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CN111244307B (zh) * | 2018-11-29 | 2021-10-22 | Tcl科技集团股份有限公司 | 一种量子点发光二极管及其制备方法 |
KR20210005350A (ko) * | 2019-07-03 | 2021-01-14 | 삼성디스플레이 주식회사 | 표시 장치 및 표시 장치 제조 방법 |
Citations (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002507319A (ja) * | 1997-06-30 | 2002-03-05 | アヴェンティス・リサーチ・ウント・テクノロジーズ・ゲーエムベーハー・ウント・コー・カーゲー | 平坦な有機発光装置用の薄膜電極およびその製造方法 |
JP2005174832A (ja) * | 2003-12-12 | 2005-06-30 | Tadahiro Omi | 表示素子、その製造方法及び表示装置 |
JP2008033284A (ja) * | 2006-07-04 | 2008-02-14 | Semiconductor Energy Lab Co Ltd | 表示装置の作製方法 |
WO2010013520A1 (ja) * | 2008-07-30 | 2010-02-04 | 出光興産株式会社 | インデノピレン化合物、並びにそれを用いた有機薄膜太陽電池用材料および有機薄膜太陽電池 |
JP2010199079A (ja) * | 2010-04-19 | 2010-09-09 | Canon Inc | 有機el素子および表示装置 |
JP2013033872A (ja) * | 2011-08-03 | 2013-02-14 | Sumitomo Chemical Co Ltd | 有機エレクトロルミネッセンス素子 |
JP2013510397A (ja) * | 2009-11-03 | 2013-03-21 | フンダシオ インスティチュート デ サイエンセズ フォトニクス | 光電子デバイス用多層金属電極 |
JP2013077419A (ja) * | 2011-09-30 | 2013-04-25 | Mitsubishi Materials Corp | 有機エレクトロルミネッセンス素子の陽極用分散液、および有機エレクトロルミネッセンス素子の陽極の製造方法 |
JP2013114938A (ja) * | 2011-11-29 | 2013-06-10 | Fujifilm Corp | 積層体、及び有機電界発光装置 |
JP2013527974A (ja) * | 2010-03-04 | 2013-07-04 | ガーディアン・インダストリーズ・コーポレーション | カーボンナノチューブ及びナノワイヤー複合体を含有する透明導電性コーティングを含む電子デバイス、及びその製造方法 |
KR20130116752A (ko) * | 2012-04-16 | 2013-10-24 | 홍익대학교 산학협력단 | 산소 플라즈마 방식을 이용한 다중 전극을 가지는 바텀-이미션 방법의 유기전계발광소자의 제조방법 및 그 방법에 의한 유기전계발광소자 |
KR20130116750A (ko) * | 2012-04-16 | 2013-10-24 | 홍익대학교 산학협력단 | 다중 금속 박막의 투명전극을 이용한 탑-이미션 방법의 유기전계발광소자의 제조방법 및 그 방법에 의한 유기전계발광소자 |
JP2014120405A (ja) * | 2012-12-18 | 2014-06-30 | Showa Denko Kk | 光拡散反射性電極及び有機el素子 |
JP2015504446A (ja) * | 2011-10-04 | 2015-02-12 | 3533899 インコーポレーティッド | 正孔注入層および輸送層のための改善されたドーピング法 |
US20160260518A1 (en) * | 2015-03-06 | 2016-09-08 | Shin-Etsu Chemical Co., Ltd. | Conductive material and substrate |
CN106958017A (zh) * | 2010-12-07 | 2017-07-18 | 罗地亚管理公司 | 包括纳米结构体的导电聚合物膜、制备聚合物膜的方法以及包括该膜的电子装置 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0784565B2 (ja) * | 1984-08-20 | 1995-09-13 | 株式会社リコー | ジスアゾ化合物 |
EP2922099B1 (en) | 2005-08-12 | 2019-01-02 | Cambrios Film Solutions Corporation | Nanowires-based transparent conductors |
JP4946016B2 (ja) * | 2005-11-25 | 2012-06-06 | 富士ゼロックス株式会社 | 多色表示用光学組成物、光学素子、及び光学素子の表示方法 |
TWI427682B (zh) | 2006-07-04 | 2014-02-21 | Semiconductor Energy Lab | 顯示裝置的製造方法 |
KR101649224B1 (ko) | 2008-12-16 | 2016-08-18 | 엘지디스플레이 주식회사 | 백색 전면발광 유기전계발광 표시장치 |
CN103137870A (zh) | 2011-11-29 | 2013-06-05 | 海洋王照明科技股份有限公司 | 聚合物太阳能电池及其制备方法 |
KR101970570B1 (ko) | 2012-12-18 | 2019-04-19 | 엘지디스플레이 주식회사 | 유기발광다이오드 표시소자 및 그 제조방법 |
US9627691B2 (en) * | 2013-02-07 | 2017-04-18 | Ada Technologies, Inc. | Metalized, three-dimensional structured oxygen cathode materials for lithium/air batteries and method for making and using the same |
CN104218155A (zh) | 2013-05-30 | 2014-12-17 | 海洋王照明科技股份有限公司 | 一种有机电致发光器件及其制备方法 |
CN103606389B (zh) | 2013-10-28 | 2016-11-16 | 中国科学院长春光学精密机械与物理研究所 | 高导电性无机、金属掺杂多层结构透明导电薄膜的制备方法 |
JP2015035631A (ja) * | 2014-11-14 | 2015-02-19 | 株式会社村田製作所 | 積層セラミック電子部品 |
KR101694878B1 (ko) * | 2016-02-22 | 2017-01-10 | 삼성전자주식회사 | 도펀트로 도핑된 그라펜 및 이를 이용한 소자 |
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Patent Citations (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002507319A (ja) * | 1997-06-30 | 2002-03-05 | アヴェンティス・リサーチ・ウント・テクノロジーズ・ゲーエムベーハー・ウント・コー・カーゲー | 平坦な有機発光装置用の薄膜電極およびその製造方法 |
JP2005174832A (ja) * | 2003-12-12 | 2005-06-30 | Tadahiro Omi | 表示素子、その製造方法及び表示装置 |
JP2008033284A (ja) * | 2006-07-04 | 2008-02-14 | Semiconductor Energy Lab Co Ltd | 表示装置の作製方法 |
WO2010013520A1 (ja) * | 2008-07-30 | 2010-02-04 | 出光興産株式会社 | インデノピレン化合物、並びにそれを用いた有機薄膜太陽電池用材料および有機薄膜太陽電池 |
JP2013510397A (ja) * | 2009-11-03 | 2013-03-21 | フンダシオ インスティチュート デ サイエンセズ フォトニクス | 光電子デバイス用多層金属電極 |
JP2013527974A (ja) * | 2010-03-04 | 2013-07-04 | ガーディアン・インダストリーズ・コーポレーション | カーボンナノチューブ及びナノワイヤー複合体を含有する透明導電性コーティングを含む電子デバイス、及びその製造方法 |
JP2010199079A (ja) * | 2010-04-19 | 2010-09-09 | Canon Inc | 有機el素子および表示装置 |
CN106958017A (zh) * | 2010-12-07 | 2017-07-18 | 罗地亚管理公司 | 包括纳米结构体的导电聚合物膜、制备聚合物膜的方法以及包括该膜的电子装置 |
JP2013033872A (ja) * | 2011-08-03 | 2013-02-14 | Sumitomo Chemical Co Ltd | 有機エレクトロルミネッセンス素子 |
JP2013077419A (ja) * | 2011-09-30 | 2013-04-25 | Mitsubishi Materials Corp | 有機エレクトロルミネッセンス素子の陽極用分散液、および有機エレクトロルミネッセンス素子の陽極の製造方法 |
JP2015504446A (ja) * | 2011-10-04 | 2015-02-12 | 3533899 インコーポレーティッド | 正孔注入層および輸送層のための改善されたドーピング法 |
JP2013114938A (ja) * | 2011-11-29 | 2013-06-10 | Fujifilm Corp | 積層体、及び有機電界発光装置 |
KR20130116750A (ko) * | 2012-04-16 | 2013-10-24 | 홍익대학교 산학협력단 | 다중 금속 박막의 투명전극을 이용한 탑-이미션 방법의 유기전계발광소자의 제조방법 및 그 방법에 의한 유기전계발광소자 |
KR20130116752A (ko) * | 2012-04-16 | 2013-10-24 | 홍익대학교 산학협력단 | 산소 플라즈마 방식을 이용한 다중 전극을 가지는 바텀-이미션 방법의 유기전계발광소자의 제조방법 및 그 방법에 의한 유기전계발광소자 |
JP2014120405A (ja) * | 2012-12-18 | 2014-06-30 | Showa Denko Kk | 光拡散反射性電極及び有機el素子 |
US20160260518A1 (en) * | 2015-03-06 | 2016-09-08 | Shin-Etsu Chemical Co., Ltd. | Conductive material and substrate |
JP2016164241A (ja) * | 2015-03-06 | 2016-09-08 | 信越化学工業株式会社 | 導電性材料及び基板 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2020261446A1 (ja) * | 2019-06-26 | 2020-12-30 | シャープ株式会社 | 電界発光素子及び表示装置 |
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KR20180036905A (ko) | 2018-04-10 |
US10847742B2 (en) | 2020-11-24 |
CN107887524B (zh) | 2020-12-11 |
KR102601451B1 (ko) | 2023-11-13 |
US20180097196A1 (en) | 2018-04-05 |
CN107887524A (zh) | 2018-04-06 |
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