JP2012517684A - 半導体プロセスシステムにおけるイオンソース(イオン源)のクリーニング - Google Patents
半導体プロセスシステムにおけるイオンソース(イオン源)のクリーニング Download PDFInfo
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- JP2012517684A JP2012517684A JP2011550109A JP2011550109A JP2012517684A JP 2012517684 A JP2012517684 A JP 2012517684A JP 2011550109 A JP2011550109 A JP 2011550109A JP 2011550109 A JP2011550109 A JP 2011550109A JP 2012517684 A JP2012517684 A JP 2012517684A
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Classifications
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
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- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/18—Vacuum locks ; Means for obtaining or maintaining the desired pressure within the vessel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/06—Sources
- H01J2237/08—Ion sources
- H01J2237/0815—Methods of ionisation
- H01J2237/082—Electron beam
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/22—Treatment of data
Abstract
【選択図】図7
Description
3F2(g)+W(s)→WF6(g) (1)
6F(g)+W(s)→WF6(g) (2)
同様に、(3)のようなクリーニングガスとアークチャンバのタングステン材料との間の反応があってもよい。
3XeF2+W→3Xe+WF6 (3)
これに代えて、WF6(またはWF5またはWF4)は、システムに直接供給されてもよい。
WF6→W+3F2 (4)
2WF5→2W+5F2 (5)
WF4→W+2F2 (6)
WF6(g)+2W(s)→3WF2(g) (7)
2WF6(g)+W(s)→3WF4(g) (8)
5WF6(g)+W(s)→6WF5(g) (9)
2XeF2(g)+Si(s)→2Xe(g)+SiF4(g) (10)
シリコン/XeF2反応は、活性化(換言すればプラズマまたは加熱)無しで起こる。XeF2とSiの反応速度は、XeF2とSiO2の反応速度より大変大きく、XeF2はSiとの反応に対して選択的である。
3XeF2(g)+2B(s)→3Xe(g)+2BF3(g) (11)
XeF2の砒素、リンおよびゲルマニウムへのエッチャントとしての使用は本発明により予期され、下記の反応を含んでよい。
5XeF2(g)+2As(s)→5Xe(g)+2AsF5(g) (12)
5XeF2(g)+2P(s)→5Xe(g)+2PF5(g) (13)
2XeF2(g)+Ge(s)→2Xe(g)+GeF4(g) (14)
このような反応はエネルギー活性化を含んでまたは含まずに実行されてよい。
5XeF2(g)+2P(s)→5Xe(g)+2PF5(g)
合成エンタルピー(kJ/mol)は、Lange's Handbook of Chemistry(第14版)から取られ、反応時の放熱を決定するためにここにリストされる。XeF2(−164)、Xe(0)、P(0)およびPF5(−1594.4)
Claims (8)
- イオンインプランテーションシステム内の間接加熱カソードソースの状態を制御する方法であって、
(a)予め定められた時間におけるカソードバイアス電力を測定することで、前記間接加熱カソードソースの消費電力を決定することと、
(b)前記予め定められた時間における前記消費電力と初期電力とを比較することと、(c)この比較に応じて、前記間接加熱カソードの状態を制御するために(i)または(ii)の修正動作を行うこととを備え、
(i)の修正動作は、もし前記予め定められた時間の前記消費電力が前記初期電力よりも高ければ、前記間接加熱カソードをエッチングすることであり、
(ii)の修正動作は、もし前記予め定められた時間の前記消費電力が前記初期電力よりも低ければ、前記間接加熱カソードを再生することである、方法。 - (c)(i)の修正動作におけるエッチングは、エッチングに十分となるような低から中温度条件下で、前記間接加熱カソードを操作することを含む、請求項1に記載の方法。
- (c)(ii)の修正動作における再生は、前記間接加熱カソード上にプラズマ状態でフッ素化ガスを流すことを含む、請求項1に記載の方法。
- 前記フッ素化ガスは、XeF2、XeF4、XeF6、GeF4、SiF4、BF3、AsF5、AsF3、PF5、PF3、F2、TaF3、TaF5、WF6、WF5、WF4、NF3、IF5、IF7、KrF2、SF6、C2F6、CF4、ClF3、N2F4、N2F2、N3F、NFH2、NH2F、BrF3、C3F8、C4F8、C5F8、CHF3、CH2F2、CH3F、COF2、HF、C2HF5、C2H2F4、C2H3F3、C2H4F2、C2H5F、C3F6およびMoF6のうち、1または複数を含む、請求項3に記載の方法。
- (c)(ii)の修正動作の再生は、金属堆積が起こるのに十分な高温条件下で、前記間接加熱カソードを操作することを含む、請求項1に記載の方法。
- 前記フッ素化ガスは、XeF2およびN2F4のうち1または複数を含む、請求項4に記載の方法。
- イオンソースのアークチャンバ内にカソードを備えるイオンインプランテーションシステムを動作させて、前記イオンソースの動作効率を維持する方法であって、
(a)および(b)からなるグループから選択される条件下で、前記カソードとタングステン試薬とを接触させることを含み、
(a)の条件は、前記カソード上にタングステンの堆積を生じさせるような条件であり、
(b)の条件は、堆積された材料が前記カソードからエッチングされるような条件である方法。 - 1または複数の部材からイオン化に関連した堆積物を少なくとも部分的に除去するために、イオンインプランテーションシステムの当該1または複数の部材をクリーニングする方法であって、
(a)および(b)からなるグループから選択される条件下でシステムを通してクリーニングガスを流すことを含み、
(a)の条件は、カソード上に材料の堆積が生じるような条件であり、
(b)の条件は、前記カソードから堆積された材料のエッチングが生じるような条件である、方法。
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KR20140114735A (ko) * | 2013-03-19 | 2014-09-29 | 가부시키가이샤 에스이엔 | 이온주입장치 및 이온주입장치의 클리닝방법 |
JP2014182919A (ja) * | 2013-03-19 | 2014-09-29 | Sen Corp | イオン注入装置およびイオン注入装置のクリーニング方法 |
US10030304B2 (en) | 2013-03-19 | 2018-07-24 | Sumitomo Heavy Industries Ion Technology Co., Ltd. | Ion implantation apparatus and method of cleaning ion implantation apparatus |
KR102020684B1 (ko) | 2013-03-19 | 2019-09-10 | 스미도모쥬기가이 이온 테크놀로지 가부시키가이샤 | 이온주입장치 및 이온주입장치의 클리닝방법 |
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KR101822779B1 (ko) | 2018-01-26 |
KR20160128462A (ko) | 2016-11-07 |
CN101981661A (zh) | 2011-02-23 |
US20110259366A1 (en) | 2011-10-27 |
TW201530624A (zh) | 2015-08-01 |
SG188150A1 (en) | 2013-03-28 |
KR20110005683A (ko) | 2011-01-18 |
EP2248153A2 (en) | 2010-11-10 |
TW201005806A (en) | 2010-02-01 |
EP2248153A4 (en) | 2012-01-18 |
JP5433025B2 (ja) | 2014-03-05 |
KR101755970B1 (ko) | 2017-07-07 |
KR20150115960A (ko) | 2015-10-14 |
US20120058252A1 (en) | 2012-03-08 |
TWI573179B (zh) | 2017-03-01 |
JP6208109B2 (ja) | 2017-10-04 |
EP2248153B1 (en) | 2016-09-21 |
TWI619153B (zh) | 2018-03-21 |
TW201724209A (zh) | 2017-07-01 |
US9991095B2 (en) | 2018-06-05 |
WO2009102762A2 (en) | 2009-08-20 |
TWI494975B (zh) | 2015-08-01 |
JP5686423B2 (ja) | 2015-03-18 |
JP2011512015A (ja) | 2011-04-14 |
JP2015026623A (ja) | 2015-02-05 |
JP2014089968A (ja) | 2014-05-15 |
WO2009102762A3 (en) | 2009-11-12 |
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