US20110021011A1 - Carbon materials for carbon implantation - Google Patents
Carbon materials for carbon implantation Download PDFInfo
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- US20110021011A1 US20110021011A1 US12/842,006 US84200610A US2011021011A1 US 20110021011 A1 US20110021011 A1 US 20110021011A1 US 84200610 A US84200610 A US 84200610A US 2011021011 A1 US2011021011 A1 US 2011021011A1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0605—Carbon
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/48—Ion implantation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
- H01L21/2236—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase from or into a plasma phase
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/06—Sources
- H01J2237/08—Ion sources
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/31701—Ion implantation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
Definitions
- the present disclosure relates to ion implantation methods and systems, and more particularly, to carbon materials for carbon ion implantation in such systems.
- Ion implantation is used in integrated circuit fabrication to accurately introduce controlled amounts of dopant impurities into semiconductor wafers and is one of the processes of microelectronic/semiconductor manufacturing.
- an ion source ionizes a desired dopant element gas, and the ions are extracted from the source in the form of an ion beam of desired energy. Extraction is achieved by applying a high voltage across suitably-shaped extraction electrodes, which incorporate apertures for passage of the extracted beam.
- the ion beam is then directed at the surface of a workpiece, such as a semiconductor wafer, in order to implant the workpiece with the dopant element.
- the ions of the beam penetrate the surface of the workpiece to form a region of desired conductivity.
- ion sources are used in ion implantation systems, including the Freeman and Bernas types that employ thermoelectrodes and are powered by an electric arc, microwave types using a magnetron, indirectly heated cathode (IHC) sources, and RF plasma sources, all of which typically operate in a vacuum.
- the ion source generates ions by introducing electrons into a vacuum arc chamber (hereinafter “chamber”) filled with the dopant gas (commonly referred to as the “feedstock gas”). Collisions of the electrons with atoms and molecules in the dopant gas result in the creation of ionized plasma consisting of positive and negative dopant ions.
- An extraction electrode with a negative or positive bias will respectively allow the positive or negative ions to pass through an aperture as a collimated ion beam, which is accelerated towards the target material.
- carbon which is known to inhibit diffusion, is implanted into the target material to produce a desired effect in the integrated circuit device.
- the carbon is generally implanted from a feedstock gas such as carbon monoxide or carbon dioxide.
- a feedstock gas such as carbon monoxide or carbon dioxide.
- the use of carbon monoxide or carbon dioxide gases can result in oxidation of the metal surfaces within the plasma source (arc chamber) of the ion implanter tool, and can also result in carbon residues depositing on electrical insulators. These phenomena reduce the performance of the implanter tool, thereby resulting in the need to perform frequent maintenance. Oxidation can result in inefficiencies in the implantation process.
- Frequency and duration of preventive maintenance is one performance factor of an ion implantation tool. As a general tendency the tool PM frequency and duration should be decreased.
- the parts of the ion implanter tool that require the most maintenance include the ion source, which is generally serviced after approximately 50 to 300 hours of operation, depending on operating conditions; the extraction electrodes and high voltage insulators, which are usually cleaned after a few hundred hours of operation; and the pumps and vacuum lines of vacuum systems associated with the tool. Additionally, the filament of the ion source is often replaced on a regular basis.
- feedstock molecules dosed into an arc chamber would be ionized and fragmented without substantial interaction with the arc chamber itself or any other components of the ion implanter.
- feedstock gas ionization and fragmentation can results in such undesirable effects as arc chamber components etching or sputtering, deposition on arc chamber surfaces, redistribution of arc chamber wall material, etc.
- the use of carbon monoxide or carbon dioxide gases can result in carbon deposition within the chamber. This can be a contributor to ion beam instability, and may eventually cause premature failure of the ion source.
- the residue also forms on the high voltage components of the ion implanter tool, such as the source insulator or the surfaces of the extraction electrodes, causing energetic high voltage sparking.
- Such sparks are another contributor to beam instability, and the energy released by these sparks can damage sensitive electronic components, leading to increased equipment failures and poor mean time between failures (MTBF).
- various materials can accumulate on components during extended ion implantation processes. Once enough tungsten is accumulated, the power used to maintain temperature sufficient to meet the beam current setpoint may not be sustainable. This causes loss of ion beam current, which leads to conditions that warrant the replacement of the ion source. The resultant performance degradation and short lifespan of the ion source reduces productivity of the ion implanter tool.
- Yet another cause of ion source failure is the erosion (or sputtering) of material.
- metallic materials such as tungsten (e.g., the cathode of an IHC source or the filament of a Bernas source) are sputtered by ions in the plasma of the arc chamber. Because sputtering is dominated by the heaviest ions in the plasma, the sputtering effect may worsen as ion mass increases. In fact, continued sputtering of material “thins” the cathode eventually leading to formation of a hole in the cathode (“cathode punch-through” in the case of IHC), or for the case of the Bernas source, creates an opening in the filament. Performance and lifetime of the ion source are greatly reduced as a result. The art thus continues to seek methods that can maintain a balance between the accumulation and erosion of material on the cathode to prolong the ion source life.
- the present disclosure relates to a method of implanting carbon ions into a target substrate.
- This method comprises: ionizing a carbon-containing dopant material to produce a plasma having ions; and implanting the ions into the target substrate.
- the present disclosure relates to another method of implanting carbon ions into a target substrate.
- This method comprises: ionizing a carbon-containing dopant material to produce a plasma having ions; co-flowing an additional gas or series of gases with the carbon-containing dopant material; and implanting the ions into the target substrate.
- the carbon-containing dopant material is of the formula C w F x O y H z , wherein w, x, y and z are as defined above.
- the present disclosure relates to a method of improving the efficiency of an ion implanter tool.
- This method comprises: selecting a carbon-containing dopant material of the formula C w F x O y H z for use in the ion implanter tool in a chamber, wherein w, x, y and z are as defined above; ionizing the carbon-containing dopant material; and implanting a carbon ion from the ionized carbon-containing dopant material using the ion implanter tool.
- the selecting of the material of the formula C w F x O y H z minimizes the amount of carbon and/or non-carbon elements deposited in the chamber after the implanting of the carbon ion. In doing so, the performance of the ion source is optimized.
- carbon ions are implanted from a feedstock source material into the target material of a substrate via an ion implantation process.
- an ion source generates the carbon ions by introducing electrons into a vacuum arc chamber filled with a carbon-containing dopant gas as the feedstock material.
- the chamber has tungsten walls on which a filament electrode and a repeller electrode are mounted and separated from the walls by ceramic insulators. Collisions of the electrons with molecules in the carbon-containing dopant gas result in the creation of ionized plasma consisting of positive carbon ions. The ions are then collimated into an ion beam, which is accelerated towards the target material.
- the beam may be directed through a mask having a plurality of openings therein to implant the carbon ions in the desired configuration.
- the present disclosure is not limited in this regard as other means of implanting carbon ions are within the scope of the present disclosure.
- the present disclosure is not limited to the implantation of carbon ions, as any ion other than carbon (or in addition to carbon) can be selected for implantation.
- the carbon atom is separated from the remainder of the molecule, thereby resulting in an ionized plasma that includes positive carbon ions.
- the positive carbon ions may be singular, or they may form clusters of two or more carbon atoms.
- molecular ions of the form C a F b O c H d + may be formed in order to co-implant multiple atomic species simultaneously.
- implanting an ion such as CF + may eliminate a later F + implant.
- the carbon dopant material can be used to produce non-carbon ions for implantation.
- An example would be the implantation of F + .
- the benefit is that a second dopant material containing fluorine may not be required.
- the ratios of C, F, O, and H are chosen to optimize ion source life and beam current. While the use of carbon achieves specific integrated circuit device characteristics, the carbon will deposit within the ion source chamber of the ion implanter, causing electrical shorts or particle generation. Additionally, the carbon can cause sputtering of the cathode (IHC source) or filament (Bernas source), resulting in shortened ion source life.
- IHC source cathode
- filament Billernas source
- the presence of oxygen within the dopant material helps to minimize the deposition of carbon by oxidizing carbon deposits to form CO or CO2. However, the oxygen can also oxidize components of the ion source, such as the cathode or the filament.
- the C w F x O y H z source gas comprises COF 2 .
- COF 2 is used as the source gas
- the molecule is ionized in the arc chamber, and C + ions are separated via mass analysis and then implanted into the target material.
- O and F ions and neutrals are also present.
- the oxygen helps to minimize carbon deposits, while the fluorine serves to keep the cathode or filament from forming an oxide surface layer. In this manner, the performance of the ion source is greatly improved.
- the present disclosure also contemplates the simultaneous flowing of C w F x O y H z material(s) with oxygen or an oxygen-containing gas such as air to modify or control the ratios of C, F, O, and H, thereby further modifying or controlling the amount of carbon ions implanted and optimizing the trade-off between carbon ions implanted and oxide formation.
- the C w F x O y H z can be co-flowed with COF 2 , CO 2 , CO, or any other oxygen-containing gas.
- COF 2 co-flowing of COF 2 or similar gases balances the deposition of the carbon ion with the coating of the arc chamber and etching.
- the present disclosure additionally contemplates the simultaneous flowing of C w F x O y H z material(s) with gases such as fluorine and hydrogen or dilution with inert gases such as nitrogen, argon, xenon, helium, combinations of the foregoing, and the like.
- gases such as fluorine and hydrogen or dilution with inert gases such as nitrogen, argon, xenon, helium, combinations of the foregoing, and the like.
- inert gases helps to sustain a plasma when flowing dopant gases.
- the amount of carbon implanted is maximized and the amounts of non-carbon elements are minimized with regard to the deposition thereof within the chamber. In such manner, the efficiency of the implanter tool can be improved. Additionally, the downtime of such a tool (for maintenance, cleaning, and the like) can also be reduced.
- the C w F x O y H z material could be flowed simultaneously with up to four additional gases.
- gases include, but are not limited to, (1) CO+F 2 +H 2 +O 2 ; (2) CO+COF 2 +H 2 ; and (3) CF 4 +CH 4 +O 2 .
- the present disclosure is not limited in this regard as other gases are within the scope of the present invention.
Abstract
Description
- The benefit of priority to U.S. Provisional Patent Application No. 61/227,875 filed Jul. 23, 2009 in the names of Joseph D. Sweeney, Oleg Byl and Robert Kaim for “Carbon Materials for Carbon Implantation” is hereby claimed under 35 USC 119. The disclosure of such U.S. Provisional Patent Application No. 61/227,875 is hereby incorporated herein by reference, in its entirety.
- The present disclosure relates to ion implantation methods and systems, and more particularly, to carbon materials for carbon ion implantation in such systems.
- Ion implantation is used in integrated circuit fabrication to accurately introduce controlled amounts of dopant impurities into semiconductor wafers and is one of the processes of microelectronic/semiconductor manufacturing. In such implantation systems, an ion source ionizes a desired dopant element gas, and the ions are extracted from the source in the form of an ion beam of desired energy. Extraction is achieved by applying a high voltage across suitably-shaped extraction electrodes, which incorporate apertures for passage of the extracted beam. The ion beam is then directed at the surface of a workpiece, such as a semiconductor wafer, in order to implant the workpiece with the dopant element. The ions of the beam penetrate the surface of the workpiece to form a region of desired conductivity.
- Several types of ion sources are used in ion implantation systems, including the Freeman and Bernas types that employ thermoelectrodes and are powered by an electric arc, microwave types using a magnetron, indirectly heated cathode (IHC) sources, and RF plasma sources, all of which typically operate in a vacuum. In any system, the ion source generates ions by introducing electrons into a vacuum arc chamber (hereinafter “chamber”) filled with the dopant gas (commonly referred to as the “feedstock gas”). Collisions of the electrons with atoms and molecules in the dopant gas result in the creation of ionized plasma consisting of positive and negative dopant ions. An extraction electrode with a negative or positive bias will respectively allow the positive or negative ions to pass through an aperture as a collimated ion beam, which is accelerated towards the target material.
- In many ion implantation systems, carbon, which is known to inhibit diffusion, is implanted into the target material to produce a desired effect in the integrated circuit device. The carbon is generally implanted from a feedstock gas such as carbon monoxide or carbon dioxide. The use of carbon monoxide or carbon dioxide gases can result in oxidation of the metal surfaces within the plasma source (arc chamber) of the ion implanter tool, and can also result in carbon residues depositing on electrical insulators. These phenomena reduce the performance of the implanter tool, thereby resulting in the need to perform frequent maintenance. Oxidation can result in inefficiencies in the implantation process.
- Frequency and duration of preventive maintenance (PM) is one performance factor of an ion implantation tool. As a general tendency the tool PM frequency and duration should be decreased. The parts of the ion implanter tool that require the most maintenance include the ion source, which is generally serviced after approximately 50 to 300 hours of operation, depending on operating conditions; the extraction electrodes and high voltage insulators, which are usually cleaned after a few hundred hours of operation; and the pumps and vacuum lines of vacuum systems associated with the tool. Additionally, the filament of the ion source is often replaced on a regular basis.
- Ideally, feedstock molecules dosed into an arc chamber would be ionized and fragmented without substantial interaction with the arc chamber itself or any other components of the ion implanter. In reality, feedstock gas ionization and fragmentation can results in such undesirable effects as arc chamber components etching or sputtering, deposition on arc chamber surfaces, redistribution of arc chamber wall material, etc. In particular, the use of carbon monoxide or carbon dioxide gases can result in carbon deposition within the chamber. This can be a contributor to ion beam instability, and may eventually cause premature failure of the ion source. The residue also forms on the high voltage components of the ion implanter tool, such as the source insulator or the surfaces of the extraction electrodes, causing energetic high voltage sparking. Such sparks are another contributor to beam instability, and the energy released by these sparks can damage sensitive electronic components, leading to increased equipment failures and poor mean time between failures (MTBF).
- In another instance of undesirable deposition, various materials (such as tungsten) can accumulate on components during extended ion implantation processes. Once enough tungsten is accumulated, the power used to maintain temperature sufficient to meet the beam current setpoint may not be sustainable. This causes loss of ion beam current, which leads to conditions that warrant the replacement of the ion source. The resultant performance degradation and short lifespan of the ion source reduces productivity of the ion implanter tool.
- Yet another cause of ion source failure is the erosion (or sputtering) of material. For example, metallic materials such as tungsten (e.g., the cathode of an IHC source or the filament of a Bernas source) are sputtered by ions in the plasma of the arc chamber. Because sputtering is dominated by the heaviest ions in the plasma, the sputtering effect may worsen as ion mass increases. In fact, continued sputtering of material “thins” the cathode eventually leading to formation of a hole in the cathode (“cathode punch-through” in the case of IHC), or for the case of the Bernas source, creates an opening in the filament. Performance and lifetime of the ion source are greatly reduced as a result. The art thus continues to seek methods that can maintain a balance between the accumulation and erosion of material on the cathode to prolong the ion source life.
- In one aspect, the present disclosure relates to a method of implanting carbon ions into a target substrate. This method comprises: ionizing a carbon-containing dopant material to produce a plasma having ions; and implanting the ions into the target substrate. The carbon-containing dopant material is of the formula CwFxOyHz wherein if w=1, then x>0 and y and z can take any value, and wherein if w>1 then x or y is >0, and z can take any value.
- In another aspect, the present disclosure relates to another method of implanting carbon ions into a target substrate. This method comprises: ionizing a carbon-containing dopant material to produce a plasma having ions; co-flowing an additional gas or series of gases with the carbon-containing dopant material; and implanting the ions into the target substrate. The carbon-containing dopant material is of the formula CwFxOyHz, wherein w, x, y and z are as defined above.
- In another aspect, the present disclosure relates to a method of improving the efficiency of an ion implanter tool. This method comprises: selecting a carbon-containing dopant material of the formula CwFxOyHz for use in the ion implanter tool in a chamber, wherein w, x, y and z are as defined above; ionizing the carbon-containing dopant material; and implanting a carbon ion from the ionized carbon-containing dopant material using the ion implanter tool. The selecting of the material of the formula CwFxOyHz minimizes the amount of carbon and/or non-carbon elements deposited in the chamber after the implanting of the carbon ion. In doing so, the performance of the ion source is optimized.
- Other aspects, features and embodiments of the present disclosure will be more fully apparent from the ensuing description and appended claims.
- In accordance with the present disclosure, carbon ions are implanted from a feedstock source material into the target material of a substrate via an ion implantation process. In one exemplary embodiment, an ion source generates the carbon ions by introducing electrons into a vacuum arc chamber filled with a carbon-containing dopant gas as the feedstock material. The chamber has tungsten walls on which a filament electrode and a repeller electrode are mounted and separated from the walls by ceramic insulators. Collisions of the electrons with molecules in the carbon-containing dopant gas result in the creation of ionized plasma consisting of positive carbon ions. The ions are then collimated into an ion beam, which is accelerated towards the target material. The beam may be directed through a mask having a plurality of openings therein to implant the carbon ions in the desired configuration. The present disclosure is not limited in this regard as other means of implanting carbon ions are within the scope of the present disclosure. Furthermore, the present disclosure is not limited to the implantation of carbon ions, as any ion other than carbon (or in addition to carbon) can be selected for implantation.
- In any embodiment, to generate the carbon ions, the carbon-containing dopant material has the formula CwFxOyHz wherein if w=1, then x>0 and y and z can take any value, and wherein if w>1 then x or y is >0, and z can take any value. The carbon atom is separated from the remainder of the molecule, thereby resulting in an ionized plasma that includes positive carbon ions. The positive carbon ions may be singular, or they may form clusters of two or more carbon atoms. Alternatively, molecular ions of the form CaFbOcHd +, wherein a>0, and b, c, and d can have any value, may be formed in order to co-implant multiple atomic species simultaneously. For example, implanting an ion such as CF+ may eliminate a later F+ implant. For cases in which co-implantation of species compromises the integrated circuit quality or performance, the carbon dopant material can be used to produce non-carbon ions for implantation. An example would be the implantation of F+. The benefit is that a second dopant material containing fluorine may not be required.
- The ratios of C, F, O, and H (as denoted by w, x, y, and z) are chosen to optimize ion source life and beam current. While the use of carbon achieves specific integrated circuit device characteristics, the carbon will deposit within the ion source chamber of the ion implanter, causing electrical shorts or particle generation. Additionally, the carbon can cause sputtering of the cathode (IHC source) or filament (Bernas source), resulting in shortened ion source life. The presence of oxygen within the dopant material helps to minimize the deposition of carbon by oxidizing carbon deposits to form CO or CO2. However, the oxygen can also oxidize components of the ion source, such as the cathode or the filament. The oxidation of these components may degrade the performance of the ion implant tool, thereby leading to frequent maintenance requirements. By adding fluorine to the dopant source, the oxidation of the cathode or filament can be minimized. However, fluorine can also react with the metallic walls of the arc chamber (usually tungsten or molybdenum), forming gases of the formula WF, or MoFx wherein x=1-6. When these gases contact the cathode or filament, they tend to react and deposit tungsten. While this is beneficial in that it can help balance any sputtering due to the ions within the plasma, it may be desirable to add some hydrogen to the molecule to balance the tungsten deposition rate (hydrogen will restrict the ability of the fluorine from reacting with the metallic walls to form the metal fluorides that subsequently cause metal deposition on the cathode or filament).
- In one embodiment, the CwFxOyHz source gas comprises COF2. When COF2 is used as the source gas, the molecule is ionized in the arc chamber, and C+ ions are separated via mass analysis and then implanted into the target material. Within the arc chamber, O and F ions and neutrals are also present. The oxygen helps to minimize carbon deposits, while the fluorine serves to keep the cathode or filament from forming an oxide surface layer. In this manner, the performance of the ion source is greatly improved.
- The present disclosure also contemplates the simultaneous flowing of CwFxOyHz material(s) with oxygen or an oxygen-containing gas such as air to modify or control the ratios of C, F, O, and H, thereby further modifying or controlling the amount of carbon ions implanted and optimizing the trade-off between carbon ions implanted and oxide formation. In particular, the CwFxOyHz can be co-flowed with COF2, CO2, CO, or any other oxygen-containing gas. Without being bound by theory, it is contemplated that the co-flowing of COF2 or similar gases balances the deposition of the carbon ion with the coating of the arc chamber and etching.
- The present disclosure additionally contemplates the simultaneous flowing of CwFxOyHz material(s) with gases such as fluorine and hydrogen or dilution with inert gases such as nitrogen, argon, xenon, helium, combinations of the foregoing, and the like. The use of inert gases helps to sustain a plasma when flowing dopant gases.
- By adjusting the ratios of elements in and generating carbon ions from a carbon-containing dopant gas having the formula CwFxOyHz (and optionally co-flowing the dopant gas with COF2, CO2, CO, (or another carbon-containing molecule) fluorine, hydrogen, nitrogen, argon, or the like), the amount of carbon implanted is maximized and the amounts of non-carbon elements are minimized with regard to the deposition thereof within the chamber. In such manner, the efficiency of the implanter tool can be improved. Additionally, the downtime of such a tool (for maintenance, cleaning, and the like) can also be reduced.
- Furthermore, the CwFxOyHz material could be flowed simultaneously with up to four additional gases. Such gases include, but are not limited to, (1) CO+F2+H2+O2; (2) CO+COF2+H2; and (3) CF4+CH4+O2. The present disclosure is not limited in this regard as other gases are within the scope of the present invention.
- Although this disclosure has included various detailed embodiments, it will be understood by those of skill in the art that various changes may be made and equivalents may be substituted for elements thereof without departing from the scope of the disclosure. In addition, modifications may be made to adapt a particular situation or material to the teachings of the invention without departing from the essential scope thereof. Therefore, it is intended that the disclosure not be limited to the particular embodiments disclosed in the above detailed description, but that the disclosure will include all embodiments falling within the spirit and scope of the foregoing description.
Claims (16)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/842,006 US20110021011A1 (en) | 2009-07-23 | 2010-07-22 | Carbon materials for carbon implantation |
US13/682,416 US20130078790A1 (en) | 2009-07-23 | 2012-11-20 | Carbon materials for carbon implantation |
US15/354,076 US10497569B2 (en) | 2009-07-23 | 2016-11-17 | Carbon materials for carbon implantation |
US16/659,004 US20200051819A1 (en) | 2009-07-23 | 2019-10-21 | Carbon materials for carbon implantation |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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US22787509P | 2009-07-23 | 2009-07-23 | |
US12/842,006 US20110021011A1 (en) | 2009-07-23 | 2010-07-22 | Carbon materials for carbon implantation |
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US15/354,076 Active US10497569B2 (en) | 2009-07-23 | 2016-11-17 | Carbon materials for carbon implantation |
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US16/659,004 Abandoned US20200051819A1 (en) | 2009-07-23 | 2019-10-21 | Carbon materials for carbon implantation |
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Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20130019797A1 (en) * | 2011-07-14 | 2013-01-24 | Sen Corporation | Impurity-doped layer formation apparatus and electrostatic chuck protection method |
WO2013040369A1 (en) * | 2011-09-16 | 2013-03-21 | Varian Semiconductor Equipment Associates, Inc. | Technique for ion implanting a target |
WO2013122986A1 (en) * | 2012-02-14 | 2013-08-22 | Advanced Technology Materials, Inc. | Carbon dopant gas and co-flow for implant beam and source life performance improvement |
EP2677058A1 (en) | 2012-06-20 | 2013-12-25 | Praxair Technology, Inc. | Gas compositions. |
EP2677057A1 (en) | 2012-06-20 | 2013-12-25 | Praxair Technology, Inc. | Methods for extending ion source life and improving ion source performance during carbon implantation |
US8916067B2 (en) | 2011-10-19 | 2014-12-23 | The Aerospace Corporation | Carbonaceous nano-scaled materials having highly functionalized surface |
KR20150096767A (en) * | 2012-12-21 | 2015-08-25 | 프랙스에어 테크놀로지, 인코포레이티드 | Storage and sub-atmospheric delivery of dopant compositions for carbon ion implantation |
US10090133B2 (en) | 2014-03-03 | 2018-10-02 | Praxair Technology, Inc. | Boron-containing dopant compositions, systems and methods of use thereof for improving ion beam current and performance during boron ion implantation |
US10497569B2 (en) | 2009-07-23 | 2019-12-03 | Entegris, Inc. | Carbon materials for carbon implantation |
US11450504B2 (en) * | 2018-11-01 | 2022-09-20 | Applied Materials, Inc. | GeH4/Ar plasma chemistry for ion implant productivity enhancement |
US11756772B2 (en) | 2019-06-06 | 2023-09-12 | Axcelis Technologies, Inc. | System and method for extending a lifetime of an ion source for molecular carbon implants |
Citations (41)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3602778A (en) * | 1967-09-25 | 1971-08-31 | Hitachi Ltd | Zener diode and method of making the same |
US3615203A (en) * | 1968-03-08 | 1971-10-26 | Sony Corp | Method for the preparation of groups iii{14 v single crystal semiconductors |
US3625749A (en) * | 1966-04-06 | 1971-12-07 | Matsushita Electronics Corp | Method for deposition of silicon dioxide films |
US3658586A (en) * | 1969-04-11 | 1972-04-25 | Rca Corp | Epitaxial silicon on hydrogen magnesium aluminate spinel single crystals |
US3725749A (en) * | 1971-06-30 | 1973-04-03 | Monsanto Co | GaAS{11 {11 {11 P{11 {11 ELECTROLUMINESCENT DEVICE DOPED WITH ISOELECTRONIC IMPURITIES |
US4100310A (en) * | 1975-01-20 | 1978-07-11 | Hitachi, Ltd. | Method of doping inpurities |
US4128733A (en) * | 1977-12-27 | 1978-12-05 | Hughes Aircraft Company | Multijunction gallium aluminum arsenide-gallium arsenide-germanium solar cell and process for fabricating same |
US4600801A (en) * | 1984-11-02 | 1986-07-15 | Sovonics Solar Systems | Fluorinated, p-doped microcrystalline silicon semiconductor alloy material |
US5077143A (en) * | 1987-05-14 | 1991-12-31 | The Secretary Of State For Defence In Her Britannic Majesty's Government Of The United Kingtom Of Great Britain And Northern Ireland | Silicon electroluminescent device |
US5436180A (en) * | 1994-02-28 | 1995-07-25 | Motorola, Inc. | Method for reducing base resistance in epitaxial-based bipolar transistor |
US5441901A (en) * | 1993-10-05 | 1995-08-15 | Motorola, Inc. | Method for forming a carbon doped silicon semiconductor device having a narrowed bandgap characteristic |
US6135128A (en) * | 1998-03-27 | 2000-10-24 | Eaton Corporation | Method for in-process cleaning of an ion source |
US20020014407A1 (en) * | 2000-07-10 | 2002-02-07 | Allen Lisa P. | System and method for improving thin films by gas cluster ion beam processing |
US6346452B1 (en) * | 1999-05-03 | 2002-02-12 | National Semiconductor Corporation | Method for controlling an N-type dopant concentration depth profile in bipolar transistor epitaxial layers |
US20020018897A1 (en) * | 2000-03-08 | 2002-02-14 | Christian Kuckertz | Plasma-treated materials |
US20020155724A1 (en) * | 2001-04-19 | 2002-10-24 | Kabushiki Kaisha Toshiba | Dry etching method and apparatus |
US20030023118A1 (en) * | 2001-05-23 | 2003-01-30 | Toshihiko Kanayama | Carborane supercluster and method of producing same |
US6518184B1 (en) * | 2002-01-18 | 2003-02-11 | Intel Corporation | Enhancement of an interconnect |
US20040166612A1 (en) * | 2002-06-05 | 2004-08-26 | Applied Materials, Inc. | Fabrication of silicon-on-insulator structure using plasma immersion ion implantation |
US20040235280A1 (en) * | 2003-05-20 | 2004-11-25 | Keys Patrick H. | Method of forming a shallow junction |
US6835414B2 (en) * | 2001-07-27 | 2004-12-28 | Unaxis Balzers Aktiengesellschaft | Method for producing coated substrates |
US20050191816A1 (en) * | 2004-02-26 | 2005-09-01 | Vanderpool Aaron O. | Implanting carbon to form P-type source drain extensions |
US20060097193A1 (en) * | 2002-06-26 | 2006-05-11 | Horsky Thomas N | Ion implantation device and a method of semiconductor manufacturing by the implantation of boron hydride cluster ions |
US20070148888A1 (en) * | 2005-12-09 | 2007-06-28 | Krull Wade A | System and method for the manufacture of semiconductor devices by the implantation of carbon clusters |
WO2007127865A2 (en) * | 2006-04-26 | 2007-11-08 | Advanced Technology Materials, Inc. | Cleaning of semiconductor processing systems |
US7446326B2 (en) * | 2005-08-31 | 2008-11-04 | Varian Semiconductor Equipment Associates, Inc. | Technique for improving ion implanter productivity |
US20080299749A1 (en) * | 2006-12-06 | 2008-12-04 | Jacobson Dale C | Cluster ion implantation for defect engineering |
US20080305598A1 (en) * | 2007-06-07 | 2008-12-11 | Horsky Thomas N | Ion implantation device and a method of semiconductor manufacturing by the implantation of ions derived from carborane molecular species |
US7553758B2 (en) * | 2006-09-18 | 2009-06-30 | Samsung Electronics Co., Ltd. | Method of fabricating interconnections of microelectronic device using dual damascene process |
US7572482B2 (en) * | 2006-04-14 | 2009-08-11 | Bae Systems Information And Electronic Systems Integration Inc. | Photo-patterned carbon electronics |
US20100224264A1 (en) * | 2005-06-22 | 2010-09-09 | Advanced Technology Materials, Inc. | Apparatus and process for integrated gas blending |
US20110079241A1 (en) * | 2009-10-01 | 2011-04-07 | Ashwini Sinha | Method for ion source component cleaning |
US7943204B2 (en) * | 2005-08-30 | 2011-05-17 | Advanced Technology Materials, Inc. | Boron ion implantation using alternative fluorinated boron precursors, and formation of large boron hydrides for implantation |
US7947582B2 (en) * | 2009-02-27 | 2011-05-24 | Tel Epion Inc. | Material infusion in a trap layer structure using gas cluster ion beam processing |
US20110143527A1 (en) * | 2009-12-14 | 2011-06-16 | Varian Semiconductor Equipment Associates, Inc. | Techniques for generating uniform ion beam |
US8013312B2 (en) * | 2006-11-22 | 2011-09-06 | Semequip, Inc. | Vapor delivery system useful with ion sources and vaporizer for use in such system |
US20120108044A1 (en) * | 2009-10-27 | 2012-05-03 | Advanced Technology Materials, Inc. | Isotopically-enriched boron-containing compounds, and methods of making and using same |
US20120119113A1 (en) * | 2010-11-17 | 2012-05-17 | Axcelis Technologies, Inc. | Implementation of CO-Gases for Germanium and Boron Ion Implants |
US8187971B2 (en) * | 2009-11-16 | 2012-05-29 | Tel Epion Inc. | Method to alter silicide properties using GCIB treatment |
US8237136B2 (en) * | 2009-10-08 | 2012-08-07 | Tel Epion Inc. | Method and system for tilting a substrate during gas cluster ion beam processing |
US8252651B2 (en) * | 2010-03-18 | 2012-08-28 | Renesas Electronics Corporation | Method of manufacturing semiconductor device |
Family Cites Families (98)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6482262B1 (en) | 1959-10-10 | 2002-11-19 | Asm Microchemistry Oy | Deposition of transition metal carbides |
JPS588071A (en) | 1981-07-08 | 1983-01-18 | Nippon Iyakuhin Kogyo Kk | Preparation of 2-benzothiazolinone-3-acetic acid amide derivative or its pharmacologically active salt |
US4369031A (en) | 1981-09-15 | 1983-01-18 | Thermco Products Corporation | Gas control system for chemical vapor deposition system |
US4459427A (en) | 1981-10-31 | 1984-07-10 | The British Petroleum Company P.L.C. | Process for the conversion of an alkane to a mixture of an alcohol and a ketone |
US4619729A (en) | 1984-02-14 | 1986-10-28 | Energy Conversion Devices, Inc. | Microwave method of making semiconductor members |
JPS60221566A (en) | 1984-04-18 | 1985-11-06 | Agency Of Ind Science & Technol | Thin film forming device |
US4722978A (en) | 1985-08-30 | 1988-02-02 | The B. F. Goodrich Company | Allyl terminated macromolecular monomers of polyethers |
US4680358A (en) | 1985-11-08 | 1987-07-14 | The B F Goodrich Company | Styryl terminated macromolecular monomers of polyethers |
JPS6315228A (en) | 1986-07-08 | 1988-01-22 | Asahi Glass Co Ltd | Electrochromic element |
JPH0772167B2 (en) | 1986-09-04 | 1995-08-02 | サントリー株式会社 | Process for producing 4-amino-3-hydroxybutyric acid derivative |
US4851255A (en) | 1986-12-29 | 1989-07-25 | Air Products And Chemicals, Inc. | Ion implant using tetrafluoroborate |
JPS6483147A (en) | 1987-09-25 | 1989-03-28 | Olympus Optical Co | Manufacture of chemical sensitivity field effect transistor |
JPH01225117A (en) | 1988-03-04 | 1989-09-08 | Nippon Telegr & Teleph Corp <Ntt> | Method and device for manufacturing semiconductor device |
JP2699549B2 (en) | 1988-06-03 | 1998-01-19 | 日産化学工業株式会社 | Method for producing 4-benzoyl-5-hydroxypyrazoles |
EP0405855A3 (en) * | 1989-06-30 | 1991-10-16 | Hitachi, Ltd. | Ion implanting apparatus and process for fabricating semiconductor integrated circuit device by using the same apparatus |
JPH04112441A (en) | 1990-08-31 | 1992-04-14 | Toshiba Corp | Ion implantation device and its cleaning method |
JPH05254808A (en) | 1992-03-10 | 1993-10-05 | Semiconductor Energy Lab Co Ltd | Preparation of boron nitride |
JPH0680681A (en) | 1992-07-15 | 1994-03-22 | Nippon Kayaku Co Ltd | Phosphonium compound and electrophotographic toner using the same |
US5347460A (en) | 1992-08-25 | 1994-09-13 | International Business Machines Corporation | Method and system employing optical emission spectroscopy for monitoring and controlling semiconductor fabrication |
EP0656668B1 (en) | 1993-06-23 | 1999-03-31 | Toray Industries, Inc. | Cell electrode, secondary cell using the cell electrode, and method for manufacturing the cell electrode |
JPH0790201A (en) | 1993-09-22 | 1995-04-04 | Hokko Chem Ind Co Ltd | Underwater antifouling coating compound |
JP2889098B2 (en) | 1993-10-13 | 1999-05-10 | 株式会社本山製作所 | Specific gas supply control device |
US5497006A (en) | 1994-11-15 | 1996-03-05 | Eaton Corporation | Ion generating source for use in an ion implanter |
US5977552A (en) | 1995-11-24 | 1999-11-02 | Applied Materials, Inc. | Boron ion sources for ion implantation apparatus |
US5993766A (en) | 1996-05-20 | 1999-11-30 | Advanced Technology Materials, Inc. | Gas source and dispensing system |
JP3077591B2 (en) | 1996-06-20 | 2000-08-14 | 日本電気株式会社 | CVD apparatus and CVD film forming method |
GB2317265A (en) | 1996-09-13 | 1998-03-18 | Aea Technology Plc | Radio frequency plasma generator |
JPH10251592A (en) | 1997-03-07 | 1998-09-22 | Kansai Paint Co Ltd | Coating composition and application thereof |
US6080297A (en) | 1996-12-06 | 2000-06-27 | Electron Transfer Technologies, Inc. | Method and apparatus for constant composition delivery of hydride gases for semiconductor processing |
US5834371A (en) | 1997-01-31 | 1998-11-10 | Tokyo Electron Limited | Method and apparatus for preparing and metallizing high aspect ratio silicon semiconductor device contacts to reduce the resistivity thereof |
US5948322A (en) | 1997-04-10 | 1999-09-07 | Advanced Technology Materials, Inc. | Source reagents for MOCVD formation of non-linear optically active metal borate films and optically active metal borate films formed therefrom |
US5943594A (en) | 1997-04-30 | 1999-08-24 | International Business Machines Corporation | Method for extended ion implanter source lifetime with control mechanism |
US6001172A (en) | 1997-08-05 | 1999-12-14 | Advanced Technology Materials, Inc. | Apparatus and method for the in-situ generation of dopants |
US6018065A (en) | 1997-11-10 | 2000-01-25 | Advanced Technology Materials, Inc. | Method of fabricating iridium-based materials and structures on substrates, iridium source reagents therefor |
AU1051899A (en) | 1997-11-12 | 1999-05-31 | Nikon Corporation | Exposure apparatus, apparatus for manufacturing devices, and method of manufacturing exposure apparatuses |
US6096467A (en) | 1997-11-19 | 2000-08-01 | Mita Industrial Co., Ltd. | Positive charging color toner |
US6614082B1 (en) | 1999-01-29 | 2003-09-02 | Micron Technology, Inc. | Fabrication of semiconductor devices with transition metal boride films as diffusion barriers |
US6376664B1 (en) | 1999-03-17 | 2002-04-23 | The Ohio State University | Cyclic bis-benzimidazole ligands and metal complexes thereof |
US6464891B1 (en) * | 1999-03-17 | 2002-10-15 | Veeco Instruments, Inc. | Method for repetitive ion beam processing with a carbon containing ion beam |
US6221169B1 (en) | 1999-05-10 | 2001-04-24 | Axcelis Technologies, Inc. | System and method for cleaning contaminated surfaces in an ion implanter |
EP2426693A3 (en) * | 1999-12-13 | 2013-01-16 | Semequip, Inc. | Ion source |
US6772781B2 (en) | 2000-02-04 | 2004-08-10 | Air Liquide America, L.P. | Apparatus and method for mixing gases |
WO2001075188A2 (en) | 2000-03-30 | 2001-10-11 | Tokyo Electron Limited | Method of and apparatus for gas injection |
US6420304B1 (en) | 2000-04-20 | 2002-07-16 | China Petrochemical Development Corporation | Polymer-supported carbonylation catalyst and its use |
ATE333471T1 (en) | 2000-06-19 | 2006-08-15 | Kimberly Clark Co | NEW PHOTO INITIATORS |
KR20000072651A (en) | 2000-08-08 | 2000-12-05 | 이관호 | Novel plant species ssamchoo and breeding method thereof |
US7223676B2 (en) | 2002-06-05 | 2007-05-29 | Applied Materials, Inc. | Very low temperature CVD process with independently variable conformality, stress and composition of the CVD layer |
US7094670B2 (en) | 2000-08-11 | 2006-08-22 | Applied Materials, Inc. | Plasma immersion ion implantation process |
US6887337B2 (en) | 2000-09-19 | 2005-05-03 | Xactix, Inc. | Apparatus for etching semiconductor samples and a source for providing a gas by sublimation thereto |
US6333272B1 (en) | 2000-10-06 | 2001-12-25 | Lam Research Corporation | Gas distribution apparatus for semiconductor processing |
US20020058385A1 (en) | 2000-10-26 | 2002-05-16 | Taiji Noda | Semiconductor device and method for manufacturing the same |
US6939409B2 (en) | 2000-12-18 | 2005-09-06 | Sumitomo Precision Products Co., Ltd. | Cleaning method and etching method |
KR100412129B1 (en) | 2001-04-30 | 2003-12-31 | 주식회사 하이닉스반도체 | Method for forming junction in semiconductor device |
US6685803B2 (en) | 2001-06-22 | 2004-02-03 | Applied Materials, Inc. | Plasma treatment of processing gases |
US6718126B2 (en) | 2001-09-14 | 2004-04-06 | Applied Materials, Inc. | Apparatus and method for vaporizing solid precursor for CVD or atomic layer deposition |
WO2003057667A2 (en) | 2001-12-31 | 2003-07-17 | The Ohio State University Research Foundation | Strapped and modified bis (benzimidazole) diamides for asymmetric catalysts and other applications |
GB2387022B (en) | 2002-03-28 | 2005-12-21 | Applied Materials Inc | Monatomic boron ion source and method |
US6617175B1 (en) | 2002-05-08 | 2003-09-09 | Advanced Technology Materials, Inc. | Infrared thermopile detector system for semiconductor process monitoring and control |
US7138768B2 (en) | 2002-05-23 | 2006-11-21 | Varian Semiconductor Equipment Associates, Inc. | Indirectly heated cathode ion source |
US20040002202A1 (en) | 2002-06-26 | 2004-01-01 | Horsky Thomas Neil | Method of manufacturing CMOS devices by the implantation of N- and P-type cluster ions |
US7192486B2 (en) | 2002-08-15 | 2007-03-20 | Applied Materials, Inc. | Clog-resistant gas delivery system |
KR100464935B1 (en) | 2002-09-17 | 2005-01-05 | 주식회사 하이닉스반도체 | Method of fabricating semiconductor device with ultra-shallow super-steep-retrograde epi-channel by Boron-fluoride compound doping |
US7080545B2 (en) | 2002-10-17 | 2006-07-25 | Advanced Technology Materials, Inc. | Apparatus and process for sensing fluoro species in semiconductor processing systems |
US6908846B2 (en) | 2002-10-24 | 2005-06-21 | Lam Research Corporation | Method and apparatus for detecting endpoint during plasma etching of thin films |
US20040110351A1 (en) | 2002-12-05 | 2004-06-10 | International Business Machines Corporation | Method and structure for reduction of junction capacitance in a semiconductor device and formation of a uniformly lowered threshold voltage device |
EP1584104A4 (en) | 2002-12-12 | 2010-05-26 | Tel Epion Inc | Re-crystallization of semiconductor surface film and doping of semiconductor by energetic cluster irradiation |
WO2006062536A2 (en) | 2004-12-03 | 2006-06-15 | Epion Corporation | Formation of ultra-shallow junctions by gas-cluster ion irridation |
US6780896B2 (en) | 2002-12-20 | 2004-08-24 | Kimberly-Clark Worldwide, Inc. | Stabilized photoinitiators and applications thereof |
JP4619951B2 (en) | 2003-08-25 | 2011-01-26 | パナソニック株式会社 | Method for forming impurity introduction layer |
JP2005093518A (en) | 2003-09-12 | 2005-04-07 | Matsushita Electric Ind Co Ltd | Control method and apparatus of dopant introduction |
US7780747B2 (en) | 2003-10-14 | 2010-08-24 | Advanced Technology Materials, Inc. | Apparatus and method for hydrogen generation from gaseous hydride |
CN1964620B (en) | 2003-12-12 | 2010-07-21 | 山米奎普公司 | Control of steam from solid subliming |
GB2412488B (en) | 2004-03-26 | 2007-03-28 | Applied Materials Inc | Ion sources |
US20050260354A1 (en) | 2004-05-20 | 2005-11-24 | Varian Semiconductor Equipment Associates, Inc. | In-situ process chamber preparation methods for plasma ion implantation systems |
KR100599358B1 (en) * | 2004-06-30 | 2006-07-12 | 한국과학기술연구원 | Method and Apparatus for Treating Metal Surfaces to Improve Hydrophobic Property |
US7819981B2 (en) | 2004-10-26 | 2010-10-26 | Advanced Technology Materials, Inc. | Methods for cleaning ion implanter components |
US20060115591A1 (en) | 2004-11-29 | 2006-06-01 | Olander W K | Pentaborane(9) storage and delivery |
US20060115590A1 (en) | 2004-11-29 | 2006-06-01 | Tokyo Electron Limited; International Business Machines Corporation | Method and system for performing in-situ cleaning of a deposition system |
US7438079B2 (en) | 2005-02-04 | 2008-10-21 | Air Products And Chemicals, Inc. | In-line gas purity monitoring and control system |
US9523688B2 (en) | 2005-03-07 | 2016-12-20 | Laurence Faure | Diagnosis method and treatment for cancer using liv21 proteins and E2F1/E2F4 biomarkers |
US20100112795A1 (en) | 2005-08-30 | 2010-05-06 | Advanced Technology Materials, Inc. | Method of forming ultra-shallow junctions for semiconductor devices |
US20070178678A1 (en) | 2006-01-28 | 2007-08-02 | Varian Semiconductor Equipment Associates, Inc. | Methods of implanting ions and ion sources used for same |
US20070178679A1 (en) | 2006-01-28 | 2007-08-02 | Varian Semiconductor Equipment Associates, Inc. | Methods of implanting ions and ion sources used for same |
JP5117405B2 (en) | 2006-01-30 | 2013-01-16 | アドバンスド テクノロジー マテリアルズ,インコーポレイテッド | Nanoporous carbon material and system and method using the same |
CN101432841B (en) | 2006-04-26 | 2013-06-26 | 艾克塞利斯科技公司 | Methods and systems for trapping ion beam particles and focusing an ion beam |
WO2007134183A2 (en) | 2006-05-13 | 2007-11-22 | Advanced Technology Materials, Inc. | Chemical reagent delivery system utilizing ionic liquid storage medium |
JP2009540533A (en) | 2006-06-12 | 2009-11-19 | セムイクウィップ・インコーポレーテッド | Evaporator |
KR20080033561A (en) | 2006-10-12 | 2008-04-17 | 삼성전자주식회사 | Method of doping a substrate |
US7642150B2 (en) | 2006-11-08 | 2010-01-05 | Varian Semiconductor Equipment Associates, Inc. | Techniques for forming shallow junctions |
US7586109B2 (en) * | 2007-01-25 | 2009-09-08 | Varian Semiconductor Equipment Associates, Inc. | Technique for improving the performance and extending the lifetime of an ion source with gas dilution |
KR20090127366A (en) | 2007-03-30 | 2009-12-10 | 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 | Method of forming ultra-shallow junctions for semiconductor devices |
US7794798B2 (en) | 2007-09-29 | 2010-09-14 | Tel Epion Inc. | Method for depositing films using gas cluster ion beam processing |
CN101981661A (en) * | 2008-02-11 | 2011-02-23 | 高级技术材料公司 | Ion source cleaning in semiconductor processing systems |
KR20100029539A (en) | 2008-09-08 | 2010-03-17 | 연세대학교 산학협력단 | Carbon doping method using the plasma |
TWM352859U (en) | 2008-10-13 | 2009-03-11 | Chen Fu Chou | Electrostatic and electromagnetic wave elimination device |
US20110021011A1 (en) | 2009-07-23 | 2011-01-27 | Advanced Technology Materials, Inc. | Carbon materials for carbon implantation |
JP5826524B2 (en) | 2010-07-16 | 2015-12-02 | 住友重機械工業株式会社 | Plasma doping apparatus and plasma doping method |
KR20140133571A (en) * | 2012-02-14 | 2014-11-19 | 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 | Carbon dopant gas and co-flow for implant beam and source life performance improvement |
-
2010
- 2010-07-22 US US12/842,006 patent/US20110021011A1/en not_active Abandoned
- 2010-07-23 TW TW103145279A patent/TWI636483B/en active
- 2010-07-23 TW TW099124371A patent/TWI478200B/en active
-
2012
- 2012-11-20 US US13/682,416 patent/US20130078790A1/en not_active Abandoned
-
2016
- 2016-11-17 US US15/354,076 patent/US10497569B2/en active Active
-
2019
- 2019-10-21 US US16/659,004 patent/US20200051819A1/en not_active Abandoned
Patent Citations (43)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3625749A (en) * | 1966-04-06 | 1971-12-07 | Matsushita Electronics Corp | Method for deposition of silicon dioxide films |
US3602778A (en) * | 1967-09-25 | 1971-08-31 | Hitachi Ltd | Zener diode and method of making the same |
US3615203A (en) * | 1968-03-08 | 1971-10-26 | Sony Corp | Method for the preparation of groups iii{14 v single crystal semiconductors |
US3658586A (en) * | 1969-04-11 | 1972-04-25 | Rca Corp | Epitaxial silicon on hydrogen magnesium aluminate spinel single crystals |
US3725749A (en) * | 1971-06-30 | 1973-04-03 | Monsanto Co | GaAS{11 {11 {11 P{11 {11 ELECTROLUMINESCENT DEVICE DOPED WITH ISOELECTRONIC IMPURITIES |
US4100310A (en) * | 1975-01-20 | 1978-07-11 | Hitachi, Ltd. | Method of doping inpurities |
US4128733A (en) * | 1977-12-27 | 1978-12-05 | Hughes Aircraft Company | Multijunction gallium aluminum arsenide-gallium arsenide-germanium solar cell and process for fabricating same |
US4600801A (en) * | 1984-11-02 | 1986-07-15 | Sovonics Solar Systems | Fluorinated, p-doped microcrystalline silicon semiconductor alloy material |
US5077143A (en) * | 1987-05-14 | 1991-12-31 | The Secretary Of State For Defence In Her Britannic Majesty's Government Of The United Kingtom Of Great Britain And Northern Ireland | Silicon electroluminescent device |
US5441901A (en) * | 1993-10-05 | 1995-08-15 | Motorola, Inc. | Method for forming a carbon doped silicon semiconductor device having a narrowed bandgap characteristic |
US5436180A (en) * | 1994-02-28 | 1995-07-25 | Motorola, Inc. | Method for reducing base resistance in epitaxial-based bipolar transistor |
US6135128A (en) * | 1998-03-27 | 2000-10-24 | Eaton Corporation | Method for in-process cleaning of an ion source |
US6346452B1 (en) * | 1999-05-03 | 2002-02-12 | National Semiconductor Corporation | Method for controlling an N-type dopant concentration depth profile in bipolar transistor epitaxial layers |
US20020018897A1 (en) * | 2000-03-08 | 2002-02-14 | Christian Kuckertz | Plasma-treated materials |
US20020014407A1 (en) * | 2000-07-10 | 2002-02-07 | Allen Lisa P. | System and method for improving thin films by gas cluster ion beam processing |
US20020155724A1 (en) * | 2001-04-19 | 2002-10-24 | Kabushiki Kaisha Toshiba | Dry etching method and apparatus |
US20030023118A1 (en) * | 2001-05-23 | 2003-01-30 | Toshihiko Kanayama | Carborane supercluster and method of producing same |
US6835414B2 (en) * | 2001-07-27 | 2004-12-28 | Unaxis Balzers Aktiengesellschaft | Method for producing coated substrates |
US6518184B1 (en) * | 2002-01-18 | 2003-02-11 | Intel Corporation | Enhancement of an interconnect |
US7135775B2 (en) * | 2002-01-18 | 2006-11-14 | Intel Corporation | Enhancement of an interconnect |
US20040166612A1 (en) * | 2002-06-05 | 2004-08-26 | Applied Materials, Inc. | Fabrication of silicon-on-insulator structure using plasma immersion ion implantation |
US20060097193A1 (en) * | 2002-06-26 | 2006-05-11 | Horsky Thomas N | Ion implantation device and a method of semiconductor manufacturing by the implantation of boron hydride cluster ions |
US20040235280A1 (en) * | 2003-05-20 | 2004-11-25 | Keys Patrick H. | Method of forming a shallow junction |
US20050191816A1 (en) * | 2004-02-26 | 2005-09-01 | Vanderpool Aaron O. | Implanting carbon to form P-type source drain extensions |
US20100224264A1 (en) * | 2005-06-22 | 2010-09-09 | Advanced Technology Materials, Inc. | Apparatus and process for integrated gas blending |
US7943204B2 (en) * | 2005-08-30 | 2011-05-17 | Advanced Technology Materials, Inc. | Boron ion implantation using alternative fluorinated boron precursors, and formation of large boron hydrides for implantation |
US7446326B2 (en) * | 2005-08-31 | 2008-11-04 | Varian Semiconductor Equipment Associates, Inc. | Technique for improving ion implanter productivity |
US20070148888A1 (en) * | 2005-12-09 | 2007-06-28 | Krull Wade A | System and method for the manufacture of semiconductor devices by the implantation of carbon clusters |
US7572482B2 (en) * | 2006-04-14 | 2009-08-11 | Bae Systems Information And Electronic Systems Integration Inc. | Photo-patterned carbon electronics |
WO2007127865A2 (en) * | 2006-04-26 | 2007-11-08 | Advanced Technology Materials, Inc. | Cleaning of semiconductor processing systems |
US7553758B2 (en) * | 2006-09-18 | 2009-06-30 | Samsung Electronics Co., Ltd. | Method of fabricating interconnections of microelectronic device using dual damascene process |
US8013312B2 (en) * | 2006-11-22 | 2011-09-06 | Semequip, Inc. | Vapor delivery system useful with ion sources and vaporizer for use in such system |
US20080299749A1 (en) * | 2006-12-06 | 2008-12-04 | Jacobson Dale C | Cluster ion implantation for defect engineering |
US7919402B2 (en) * | 2006-12-06 | 2011-04-05 | Semequip, Inc. | Cluster ion implantation for defect engineering |
US20080305598A1 (en) * | 2007-06-07 | 2008-12-11 | Horsky Thomas N | Ion implantation device and a method of semiconductor manufacturing by the implantation of ions derived from carborane molecular species |
US7947582B2 (en) * | 2009-02-27 | 2011-05-24 | Tel Epion Inc. | Material infusion in a trap layer structure using gas cluster ion beam processing |
US20110079241A1 (en) * | 2009-10-01 | 2011-04-07 | Ashwini Sinha | Method for ion source component cleaning |
US8237136B2 (en) * | 2009-10-08 | 2012-08-07 | Tel Epion Inc. | Method and system for tilting a substrate during gas cluster ion beam processing |
US20120108044A1 (en) * | 2009-10-27 | 2012-05-03 | Advanced Technology Materials, Inc. | Isotopically-enriched boron-containing compounds, and methods of making and using same |
US8187971B2 (en) * | 2009-11-16 | 2012-05-29 | Tel Epion Inc. | Method to alter silicide properties using GCIB treatment |
US20110143527A1 (en) * | 2009-12-14 | 2011-06-16 | Varian Semiconductor Equipment Associates, Inc. | Techniques for generating uniform ion beam |
US8252651B2 (en) * | 2010-03-18 | 2012-08-28 | Renesas Electronics Corporation | Method of manufacturing semiconductor device |
US20120119113A1 (en) * | 2010-11-17 | 2012-05-17 | Axcelis Technologies, Inc. | Implementation of CO-Gases for Germanium and Boron Ion Implants |
Non-Patent Citations (1)
Title |
---|
Jacques Pelletier & André Anders, Plasma-Based Ion Implantation and Deposition: A Review of Physics, Technology, and Applications, IEEE Transactions on Plasma Science, Vol. 33, No. 6, December 2005, pp. 1944-1959. * |
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Also Published As
Publication number | Publication date |
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TWI636483B (en) | 2018-09-21 |
TWI478200B (en) | 2015-03-21 |
US20170069499A1 (en) | 2017-03-09 |
US20200051819A1 (en) | 2020-02-13 |
US10497569B2 (en) | 2019-12-03 |
TW201115617A (en) | 2011-05-01 |
TW201513161A (en) | 2015-04-01 |
US20130078790A1 (en) | 2013-03-28 |
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