JP2012508991A - 液体を制御された複数領域基板支持体による改良基板温度制御 - Google Patents
液体を制御された複数領域基板支持体による改良基板温度制御 Download PDFInfo
- Publication number
- JP2012508991A JP2012508991A JP2011543856A JP2011543856A JP2012508991A JP 2012508991 A JP2012508991 A JP 2012508991A JP 2011543856 A JP2011543856 A JP 2011543856A JP 2011543856 A JP2011543856 A JP 2011543856A JP 2012508991 A JP2012508991 A JP 2012508991A
- Authority
- JP
- Japan
- Prior art keywords
- flow path
- liquid
- temperature
- region
- substrate support
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000007788 liquid Substances 0.000 title claims abstract description 197
- 239000000758 substrate Substances 0.000 title claims abstract description 129
- 238000012545 processing Methods 0.000 claims abstract description 65
- 239000012530 fluid Substances 0.000 claims abstract description 44
- 238000004891 communication Methods 0.000 claims abstract description 41
- 238000006243 chemical reaction Methods 0.000 claims abstract description 33
- 238000012546 transfer Methods 0.000 claims abstract description 33
- 238000010438 heat treatment Methods 0.000 claims abstract description 28
- 238000000034 method Methods 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 14
- 230000004888 barrier function Effects 0.000 claims description 11
- 230000008021 deposition Effects 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 claims description 9
- 230000008569 process Effects 0.000 claims description 8
- 239000000945 filler Substances 0.000 claims description 6
- 239000011230 binding agent Substances 0.000 claims description 5
- 230000003247 decreasing effect Effects 0.000 claims description 5
- 239000003989 dielectric material Substances 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 5
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 5
- 239000004593 Epoxy Substances 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 239000004020 conductor Substances 0.000 claims description 4
- 238000001020 plasma etching Methods 0.000 claims description 4
- 229920001296 polysiloxane Polymers 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 229910052582 BN Inorganic materials 0.000 claims description 3
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- 238000005219 brazing Methods 0.000 claims description 2
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 claims description 2
- 239000010935 stainless steel Substances 0.000 claims description 2
- 229910001220 stainless steel Inorganic materials 0.000 claims description 2
- 239000007769 metal material Substances 0.000 claims 2
- 229910000838 Al alloy Inorganic materials 0.000 claims 1
- 238000009826 distribution Methods 0.000 description 9
- 238000005530 etching Methods 0.000 description 9
- 238000000151 deposition Methods 0.000 description 8
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 6
- 238000009616 inductively coupled plasma Methods 0.000 description 6
- 239000002826 coolant Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000012809 cooling fluid Substances 0.000 description 1
- 239000000110 cooling liquid Substances 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 239000013529 heat transfer fluid Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 238000005065 mining Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003121 nonmonotonic effect Effects 0.000 description 1
- 239000010702 perfluoropolyether Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 229920002545 silicone oil Polymers 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3471—Introduction of auxiliary energy into the plasma
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
- C23C16/463—Cooling of the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
- H01J2237/2001—Maintaining constant desired temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Plasma & Fusion (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
【解決手段】プラズマ処理装置の反応チャンバ内で用いる基板支持体が開示されている。基板支持体は、ベース部材と、ベース部材の上に位置する熱伝導部材とを備える。熱伝導部材は、複数の領域を有しており、熱伝導部材の各領域は、個別に加熱および冷却される。熱伝導部材の上には、静電チャックが配置される。静電チャックは、プラズマ処理装置の反応チャンバ内で基板を支持するための支持面を有する。冷液源および温液源が、各領域の流路と流体連通している。バルブ構成は、流路内を循環する温液および冷液の混合比を調節することにより、液体の温度を独立的に制御するよう動作可能である。別の実施形態では、供給ラインおよび移送ラインに沿って配置された加熱素子が、液体源からの液体を、流路に循環する前に加熱する。
【選択図】図6
Description
Claims (20)
- プラズマ処理装置の反応チャンバ内で用いる基板支持体であって、
ベース部材と、
前記ベース部材の上に位置する熱伝導部材であって、第1の流路を内部に備えた第1の領域と、第2の流路を内部に備えた第2の領域とを少なくとも含む複数の領域を有し、前記熱伝導部材の前記第1および第2の領域を個別に加熱および冷却するために、前記流路を通して液体を循環させることが可能である熱伝導部材と、
前記熱伝導部材の上に位置する静電チャックであって、前記プラズマ処理装置の前記反応チャンバ内で基板を支持するための支持面を有する静電チャックと、
前記第1および第2の流路と流体連通した冷液源および温液源と、
前記第1および第2の流路内を循環する前記温液および前記冷液の混合比を調節することにより、前記第1および第2の領域内の前記液体の温度を独立的に制御するよう動作可能なバルブ構成と、
前記第1および第2の流路内の前記温液および前記冷液の前記混合比を調節することによって前記第1および第2の領域内の前記温度を独立的に制御するために、前記バルブ構成を制御する制御部と
を備える基板支持体。 - 請求項1に記載の基板支持体であって、さらに、
前記第1および第2の領域の温度を測定して、入力信号を前記制御部に供給するよう適合された前記第1の領域の第1の温度センサおよび前記第2の領域の第2の温度センサと、
前記第1および第2の領域を隔てる熱バリアと、
前記熱伝導部材と前記ベース部材との間に位置し、約0.1W/m−Kから約4W/m−Kまでの熱伝導率を有し、約1ミルから約200ミルまでの厚さを有する結合材と
を備える基板支持体。 - 請求項1に記載の基板支持体であって、
前記冷液源は、≧−10℃の温度に前記冷液を維持し、前記温液源は、≦150℃の温度に前記温液を維持し、前記温液の温度は、前記冷液の温度よりも高い基板支持体。 - 請求項2に記載の基板支持体であって、前記熱伝導部材は円板であり、各領域は、前記円板の中心に対して異なる半径方向距離に同心円状に配置され、前記熱バリアは環状チャネルである基板支持体。
- 請求項4に記載の基板支持体であって、前記環状チャネルは空であるか、もしくは、約0.1から約4.0W/m−Kまでの熱伝導率を有するエポキシ、シリコーン、または、その他の材料で満たされる基板支持体。
- 請求項4に記載の基板支持体であって、前記環状チャネルは、前記熱伝導部材の厚さ全体を通して伸びるか、もしくは、前記熱伝導部材の厚さの一部を通して伸びる基板支持体。
- 請求項2に記載の基板支持体であって、前記結合材は、シリコーンまたはエポキシで構成され、酸化アルミニウム、窒化ホウ素、酸化シリコン、アルミニウム、または、シリコンを含む1または複数の充填材を含有するか、もしくは、前記結合材は、金属ろう材で構成される基板支持体。
- 請求項1に記載の基板支持体であって、前記熱伝導部材は、アルミニウムまたはアルミニウム合金で構成されるか、もしくは、ステンレス鋼、酸化アルミニウム、または、酸化イットリウムで構成される基板支持体。
- プラズマ処理中に半導体基板の方位角方向の温度を制御する方法であって、
請求項1の基板支持体上に前記基板を支持する工程であって、前記基板は、前記複数の領域と熱的に接触する工程と、
前記第1および第2の流路に前記液体を流す工程と、
前記第1の領域の温度を測定し、前記第1の領域の前記温度が前記第1の領域の目標温度よりも低い場合に、前記冷液に対する前記温液の前記混合比を高くすることによって、前記第1の流路を流れる前記液体の前記温度を上昇させ、前記第1の領域の前記温度が前記目標温度よりも高い場合に、前記冷液に対する前記温液の前記混合比を低くすることによって、前記第1の流路を流れる前記液体の前記温度を低下させる工程と、
前記第2の領域の温度を測定し、前記第2の領域の前記温度が前記第2の領域の目標温度よりも低い場合に、前記冷液に対する前記温液の前記混合比を高くすることによって、前記第2の流路を流れる前記液体の前記温度を上昇させ、前記第2の領域の前記温度が前記目標温度よりも高い場合に、前記冷液に対する前記温液の前記混合比を低くすることによって、前記第2の流路を流れる前記液体の前記温度を低下させる工程と
を備え、
各領域内の方位角方向の温度差は、5℃未満である方法。 - 請求項9に記載の方法であって、前記複数の領域にわたる前記方位角方向の温度差は、0.5℃未満であり、前記基板にわたる半径方向の温度プロファイルは、(a)前記基板全体にわたって温度が均一であるプロファイルと、(b)前記基板にわたって温度が非均一で、前記基板の中央部領域が前記基板の縁部領域よりも熱いまたは冷たいプロファイルとの間で段階的に変更可能である方法。
- 請求項9に記載の方法であって、前記第1の領域の前記目標温度および前記第2の領域の前記目標温度は、(a)基板半径に沿って単調に上昇または低下するか、もしくは、(b)前記基板半径に沿って非単調に上昇または低下する方法。
- 請求項9に記載の方法であって、さらに、
前記反応チャンバ内に処理ガスを導入する工程と、
前記処理ガスをプラズマ状態に励起する工程と、
前記プラズマで前記基板を処理する工程と
を備え、
前記プラズマで前記基板を処理する工程は、(a)半導体材料、金属、または、誘電材料の層のプラズマエッチング、または、(b)導電材料または誘電材料の蒸着を含む方法。 - プラズマ処理装置であって、請求項1に記載の半導体基板支持体を備え、前記プラズマ処理装置は、半導体、金属、または、誘電材料をエッチングするよう適合されたプラズマエッチャ、もしくは、導電材料または誘電材料を蒸着するよう適合された蒸着チャンバであるプラズマ処理装置。
- プラズマ処理装置の反応チャンバ内で用いる基板支持体であって、
ベース部材と、
前記ベース部材の上に位置する熱伝導部材であって、第1の流路を備えた第1の領域と、第2の流路を備えた第2の領域とを有し、前記流路は、前記熱伝導部材の各領域を個別に加熱および冷却するために液体を循環させるよう適合されている熱伝導部材と、
前記第1の流路と流体連通する第1の共通ラインと、
前記第2の流路と流体連通する第2の共通ラインと、
前記第1の共通ラインと温液源からの第1の供給ラインとに流体連通し、前記温液源から前記第1の共通ラインに流れる温液の流量を制御するよう動作可能な第1のバルブと、
前記第1の共通ラインと冷液源からの第2の供給ラインとに流体連通し、前記冷液源から前記第1の共通ラインに流れる冷液の流量を制御するよう動作可能な第2のバルブと、
前記第2の共通ラインと前記温液源からの前記第1の供給ラインとに流体連通し、前記第2の共通ラインに流れる前記温液の流量を制御するよう動作可能な第3のバルブと、
前記第2の共通ラインと前記冷液源からの前記第2の供給ラインとに流体連通し、前記第2の共通ラインに流れる前記冷液の流量を制御するよう動作可能な第4のバルブと、
(a)前記第1の流路に対する前記温液および前記冷液の第1の混合比を調節するために前記第1のバルブおよび前記第2のバルブを、ならびに、(b)前記第2の流路に対する前記温液および前記冷液の第2の混合比を調節するために前記第3のバルブおよび前記第4のバルブを、独立的に制御するよう動作可能な制御部と、
前記熱伝導部材の上に位置する静電チャックであって、前記プラズマ処理装置の前記反応チャンバ内で基板を支持するための支持面を有する静電チャックと
を備える基板支持体。 - 請求項14に記載の基板支持体であって、
前記熱伝導部材は、第3の流路を備えた第3の領域と、第4の流路を備えた第4の領域と、第5の流路を備えた第5の領域とを有し、
前記基板支持体は、さらに、
前記第3の流路と流体連通する第3の共通ラインと、
前記第4の流路と流体連通する第4の共通ラインと、
前記第5の流路と流体連通する第5の共通ラインと、
前記第3の共通ラインと前記温液源からの前記第1の供給ラインとに流体連通し、前記第3の共通ラインに流れる前記温液の流量を制御するよう動作可能な第5のバルブと、
前記第3の共通ラインと前記冷液源からの前記第2の供給ラインとに流体連通し、前記第3の共通ラインに流れる前記冷液の流量を制御するよう動作可能な第6のバルブと、
前記第4の共通ラインと前記温液源からの前記第1の供給ラインとに流体連通し、前記第4の共通ラインに流れる前記温液の流量を制御するよう動作可能な第7のバルブと、
前記第4の共通ラインと前記冷液源からの前記第2の供給ラインとに流体連通し、前記第4の共通ラインに流れる前記冷液の流量を制御するよう動作可能な第8のバルブと、
前記第5の共通ラインと前記温液源からの前記第1の供給ラインとに流体連通し、前記第5の共通ラインに流れる前記温液の流量を制御するよう動作可能な第9のバルブと、
前記第5の共通ラインと前記冷液源からの前記第2の供給ラインとに流体連通し、前記第5の共通ラインに流れる前記冷液の流量を制御するよう動作可能な第10のバルブと
を備え、
前記制御部は、さらに、
(c)前記第3の流路に対する前記温液および前記冷液の第3の混合比を調節するために前記第5のバルブおよび前記第6のバルブを、
(d)前記第4の流路に対する前記温液および前記冷液の第4の混合比を調節するために前記第7のバルブおよび前記第8のバルブを、
(e)前記第5の流路に対する前記温液および前記冷液の第5の混合比を調節するために前記第9のバルブおよび前記第10のバルブを、独立的に制御するよう動作可能である基板支持体。 - 請求項14に記載の基板支持体であって、前記熱伝導部材は円板であり、各領域は、前記円板の中心に対して異なる半径方向距離に同心円状に配置されている基板支持体。
- 請求項16に記載の基板支持体であって、前記第1の流路、前記第2の流路、前記第3の流路、前記第4の流路、および、前記第5の流路は、戻りラインに流体連通しており、前記戻りラインは、前記温液源および/または前記冷液源に流体連通している基板支持体。
- プラズマ処理装置の反応チャンバ内で用いる基板支持体であって、
ベース部材と、
前記ベース部材の上に位置する熱伝導部材であって、第1の流路を備えた第1の領域と、第2の流路を備えた第2の領域とを有し、前記流路は、前記熱伝導部材の各領域を個別に加熱および冷却するために液体を循環させるよう適合されている熱伝導部材と、
前記第1の流路および液体源と流体連通する供給ラインと、
前記供給ラインに沿って配置され、前記液体が前記第1の流路に循環される前に、前記液体源から流れる前記液体を第1の温度に加熱するよう適合された第1の加熱素子と、
前記第1の流路および前記第2の流路と流体連通し、前記液体を前記第1の流路から前記第2の流路に流すよう適合された第1の移送ラインと、
前記第1の移送ラインに沿って配置され、前記第2の流路に循環する前に、前記液体を第2の温度に加熱するよう適合された第2の加熱素子と、
各加熱素子への電力を調節することによって各領域の温度を独立的に制御するように各加熱素子を制御する制御部と、
前記熱伝導部材の上に位置する静電チャックであって、前記プラズマ処理装置の前記反応チャンバ内で基板を支持するための支持面を有する静電チャックと
を備える基板支持体。 - 請求項18に記載の基板支持体であって、
前記熱伝導部材は、第3の流路を備えた第3の領域と、第4の流路を備えた第4の領域と、第5の流路を備えた第5の領域とを有し、
前記基板支持体は、さらに、
前記第2の流路および前記第3の流路と流体連通し、前記液体を前記第2の流路から前記第3の流路に流すよう適合された第2の移送ラインと、
前記第2の移送ラインに沿って配置され、前記第3の流路に循環する前に、前記液体を第3の温度に加熱するよう適合された第3の加熱素子と、
前記第3の流路および前記第4の流路と流体連通し、前記液体を前記第3の流路から前記第4の流路に流すよう適合された第3の移送ラインと、
前記第3の移送ラインに沿って配置され、前記第4の流路に循環する前に、前記液体を第4の温度に加熱するよう適合された第4の加熱素子と、
前記第4の流路および前記第5の流路と流体連通し、前記液体を前記第4の流路から前記第5の流路に流すよう適合された第4の移送ラインと、
前記第4の移送ラインに沿って配置され、前記第5の流路に循環する前に、前記液体を第5の温度に加熱するよう適合された第5の加熱素子と、
前記第5の流路および前記液体源と流体連通し、前記液体を前記第5の流路から前記液体源に流すよう適合された戻りラインと
を備える基板支持体。 - 請求項18に記載の基板支持体であって、さらに、各領域の温度を測定して入力信号を前記制御部に供給するよう適合された温度センサを各領域に備え、前記第1の移送ラインは、前記液体を前記第1の流路から前記第2の流路に順方向または逆方向で流すよう適合される基板支持体。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/292,081 | 2008-11-12 | ||
US12/292,081 US20100116788A1 (en) | 2008-11-12 | 2008-11-12 | Substrate temperature control by using liquid controlled multizone substrate support |
PCT/IB2009/054876 WO2010055441A2 (en) | 2008-11-12 | 2009-11-03 | Improved substrate temperature control by using liquid controlled multizone substrate support |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012508991A true JP2012508991A (ja) | 2012-04-12 |
JP5546552B2 JP5546552B2 (ja) | 2014-07-09 |
Family
ID=42164256
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011543856A Active JP5546552B2 (ja) | 2008-11-12 | 2009-11-03 | 液体を制御された複数領域基板支持体による改良基板温度制御 |
Country Status (7)
Country | Link |
---|---|
US (1) | US20100116788A1 (ja) |
EP (1) | EP2366039A4 (ja) |
JP (1) | JP5546552B2 (ja) |
KR (2) | KR20160141873A (ja) |
CN (2) | CN105603376A (ja) |
TW (2) | TWI589719B (ja) |
WO (1) | WO2010055441A2 (ja) |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20160006693A (ko) * | 2013-05-07 | 2016-01-19 | 어플라이드 머티어리얼스, 인코포레이티드 | 최소의 크로스토크를 갖는 열적으로 격리된 구역들을 갖는 정전 척 |
KR20160049071A (ko) * | 2014-10-24 | 2016-05-09 | 세메스 주식회사 | 웨이퍼 지지용 척 구조물 |
JP2017506828A (ja) * | 2014-02-12 | 2017-03-09 | アクセリス テクノロジーズ, インコーポレイテッド | 広温度範囲チャックに対する複数流体冷却システム |
JP2017519373A (ja) * | 2014-05-16 | 2017-07-13 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | ペデスタルの流体による熱制御 |
JP2017208562A (ja) * | 2012-04-26 | 2017-11-24 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | Escの接着剤の浸食を防止するための方法及び装置 |
JP2018503965A (ja) * | 2014-11-26 | 2018-02-08 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 比例式熱流体送達システムを使用した基板キャリア |
KR20180028400A (ko) * | 2015-08-06 | 2018-03-16 | 어플라이드 머티어리얼스, 인코포레이티드 | 웨이퍼 프로세싱 시스템들을 위한 열 관리 시스템들 및 방법들 |
JP2020505764A (ja) * | 2017-01-16 | 2020-02-20 | イーアールエス エレクトロニック ゲーエムベーハーERS electronic GmbH | 基板の温度を制御するための装置及びその製造方法 |
JP2021184461A (ja) * | 2020-05-22 | 2021-12-02 | サムス カンパニー リミテッド | 静電チャック及びその製造方法と基板処理装置 |
KR20220052998A (ko) * | 2019-08-27 | 2022-04-28 | 와틀로 일렉트릭 매뉴팩츄어링 컴파니 | 반도체 웨이퍼 홀더를 위한 열 디퓨저 |
KR102688227B1 (ko) * | 2022-02-28 | 2024-07-26 | 주식회사 이에스티 | 세라믹 시트 타입 저온 정전척 |
Families Citing this family (169)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8221580B2 (en) * | 2005-10-20 | 2012-07-17 | Applied Materials, Inc. | Plasma reactor with wafer backside thermal loop, two-phase internal pedestal thermal loop and a control processor governing both loops |
CN101921987A (zh) * | 2009-06-10 | 2010-12-22 | 鸿富锦精密工业(深圳)有限公司 | 溅镀镀膜装置 |
US8637794B2 (en) | 2009-10-21 | 2014-01-28 | Lam Research Corporation | Heating plate with planar heating zones for semiconductor processing |
US9111729B2 (en) | 2009-12-03 | 2015-08-18 | Lam Research Corporation | Small plasma chamber systems and methods |
KR101644673B1 (ko) * | 2009-12-15 | 2016-08-01 | 램 리써치 코포레이션 | Cd 균일성을 향상시키기 위한 기판 온도의 조절 |
US9338871B2 (en) * | 2010-01-29 | 2016-05-10 | Applied Materials, Inc. | Feedforward temperature control for plasma processing apparatus |
US8916793B2 (en) | 2010-06-08 | 2014-12-23 | Applied Materials, Inc. | Temperature control in plasma processing apparatus using pulsed heat transfer fluid flow |
US9190289B2 (en) | 2010-02-26 | 2015-11-17 | Lam Research Corporation | System, method and apparatus for plasma etch having independent control of ion generation and dissociation of process gas |
US9324576B2 (en) | 2010-05-27 | 2016-04-26 | Applied Materials, Inc. | Selective etch for silicon films |
US8880227B2 (en) | 2010-05-27 | 2014-11-04 | Applied Materials, Inc. | Component temperature control by coolant flow control and heater duty cycle control |
US8608852B2 (en) * | 2010-06-11 | 2013-12-17 | Applied Materials, Inc. | Temperature controlled plasma processing chamber component with zone dependent thermal efficiencies |
US9155181B2 (en) | 2010-08-06 | 2015-10-06 | Lam Research Corporation | Distributed multi-zone plasma source systems, methods and apparatus |
US9967965B2 (en) | 2010-08-06 | 2018-05-08 | Lam Research Corporation | Distributed, concentric multi-zone plasma source systems, methods and apparatus |
US8999104B2 (en) | 2010-08-06 | 2015-04-07 | Lam Research Corporation | Systems, methods and apparatus for separate plasma source control |
US9449793B2 (en) | 2010-08-06 | 2016-09-20 | Lam Research Corporation | Systems, methods and apparatus for choked flow element extraction |
US8501283B2 (en) * | 2010-10-19 | 2013-08-06 | Lam Research Corporation | Methods for depositing bevel protective film |
US8791392B2 (en) | 2010-10-22 | 2014-07-29 | Lam Research Corporation | Methods of fault detection for multiplexed heater array |
US8546732B2 (en) | 2010-11-10 | 2013-10-01 | Lam Research Corporation | Heating plate with planar heater zones for semiconductor processing |
US10283321B2 (en) | 2011-01-18 | 2019-05-07 | Applied Materials, Inc. | Semiconductor processing system and methods using capacitively coupled plasma |
US8999856B2 (en) | 2011-03-14 | 2015-04-07 | Applied Materials, Inc. | Methods for etch of sin films |
US9064815B2 (en) | 2011-03-14 | 2015-06-23 | Applied Materials, Inc. | Methods for etch of metal and metal-oxide films |
US9307578B2 (en) | 2011-08-17 | 2016-04-05 | Lam Research Corporation | System and method for monitoring temperatures of and controlling multiplexed heater array |
US10388493B2 (en) | 2011-09-16 | 2019-08-20 | Lam Research Corporation | Component of a substrate support assembly producing localized magnetic fields |
TWI495757B (zh) * | 2011-09-16 | 2015-08-11 | Kern Energy Entpr Co Ltd | 薄膜製程設備及其製作流程 |
US10274270B2 (en) | 2011-10-27 | 2019-04-30 | Applied Materials, Inc. | Dual zone common catch heat exchanger/chiller |
US10256123B2 (en) | 2011-10-27 | 2019-04-09 | Applied Materials, Inc. | Component temperature control using a combination of proportional control valves and pulsed valves |
US9177762B2 (en) | 2011-11-16 | 2015-11-03 | Lam Research Corporation | System, method and apparatus of a wedge-shaped parallel plate plasma reactor for substrate processing |
US10283325B2 (en) | 2012-10-10 | 2019-05-07 | Lam Research Corporation | Distributed multi-zone plasma source systems, methods and apparatus |
US8872525B2 (en) | 2011-11-21 | 2014-10-28 | Lam Research Corporation | System, method and apparatus for detecting DC bias in a plasma processing chamber |
US9508530B2 (en) | 2011-11-21 | 2016-11-29 | Lam Research Corporation | Plasma processing chamber with flexible symmetric RF return strap |
US9083182B2 (en) | 2011-11-21 | 2015-07-14 | Lam Research Corporation | Bypass capacitors for high voltage bias power in the mid frequency RF range |
US9396908B2 (en) | 2011-11-22 | 2016-07-19 | Lam Research Corporation | Systems and methods for controlling a plasma edge region |
US9263240B2 (en) * | 2011-11-22 | 2016-02-16 | Lam Research Corporation | Dual zone temperature control of upper electrodes |
US10586686B2 (en) | 2011-11-22 | 2020-03-10 | Law Research Corporation | Peripheral RF feed and symmetric RF return for symmetric RF delivery |
US8898889B2 (en) | 2011-11-22 | 2014-12-02 | Lam Research Corporation | Chuck assembly for plasma processing |
CN104024477B (zh) * | 2011-11-23 | 2016-05-18 | 朗姆研究公司 | 多区域气体注入上电极*** |
KR102074632B1 (ko) * | 2011-11-23 | 2020-02-06 | 램 리써치 코포레이션 | 상부 전극들의 이중 존 온도 제어 |
CN103205717B (zh) * | 2012-01-13 | 2016-12-21 | 鸿富锦精密工业(深圳)有限公司 | 盖体 |
US9324589B2 (en) | 2012-02-28 | 2016-04-26 | Lam Research Corporation | Multiplexed heater array using AC drive for semiconductor processing |
US8809747B2 (en) | 2012-04-13 | 2014-08-19 | Lam Research Corporation | Current peak spreading schemes for multiplexed heated array |
US9267739B2 (en) | 2012-07-18 | 2016-02-23 | Applied Materials, Inc. | Pedestal with multi-zone temperature control and multiple purge capabilities |
US9631273B2 (en) * | 2012-07-25 | 2017-04-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Apparatus for dielectric deposition process |
US9373517B2 (en) | 2012-08-02 | 2016-06-21 | Applied Materials, Inc. | Semiconductor processing with DC assisted RF power for improved control |
US9132436B2 (en) | 2012-09-21 | 2015-09-15 | Applied Materials, Inc. | Chemical control features in wafer process equipment |
US9018022B2 (en) | 2012-09-24 | 2015-04-28 | Lam Research Corporation | Showerhead electrode assembly in a capacitively coupled plasma processing apparatus |
US9157730B2 (en) | 2012-10-26 | 2015-10-13 | Applied Materials, Inc. | PECVD process |
US10049948B2 (en) | 2012-11-30 | 2018-08-14 | Lam Research Corporation | Power switching system for ESC with array of thermal control elements |
US9916998B2 (en) | 2012-12-04 | 2018-03-13 | Applied Materials, Inc. | Substrate support assembly having a plasma resistant protective layer |
US9685356B2 (en) | 2012-12-11 | 2017-06-20 | Applied Materials, Inc. | Substrate support assembly having metal bonded protective layer |
CN103898449B (zh) * | 2012-12-27 | 2017-06-06 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 用于调节托盘温度的腔室及半导体加工设备 |
US9358702B2 (en) | 2013-01-18 | 2016-06-07 | Applied Materials, Inc. | Temperature management of aluminium nitride electrostatic chuck |
US8970114B2 (en) * | 2013-02-01 | 2015-03-03 | Lam Research Corporation | Temperature controlled window of a plasma processing chamber component |
US10256079B2 (en) | 2013-02-08 | 2019-04-09 | Applied Materials, Inc. | Semiconductor processing systems having multiple plasma configurations |
US9362130B2 (en) | 2013-03-01 | 2016-06-07 | Applied Materials, Inc. | Enhanced etching processes using remote plasma sources |
US9669653B2 (en) | 2013-03-14 | 2017-06-06 | Applied Materials, Inc. | Electrostatic chuck refurbishment |
US9887121B2 (en) | 2013-04-26 | 2018-02-06 | Applied Materials, Inc. | Protective cover for electrostatic chuck |
US9677177B2 (en) | 2013-10-24 | 2017-06-13 | Applied Materials, Inc. | Substrate support with quadrants |
US9622375B2 (en) * | 2013-12-31 | 2017-04-11 | Applied Materials, Inc. | Electrostatic chuck with external flow adjustments for improved temperature distribution |
US9520315B2 (en) | 2013-12-31 | 2016-12-13 | Applied Materials, Inc. | Electrostatic chuck with internal flow adjustments for improved temperature distribution |
CN103792842B (zh) * | 2014-01-22 | 2016-08-17 | 清华大学 | 一种可用于功率场空间分布精细控制的基台及控制方法 |
CN103792974B (zh) * | 2014-01-22 | 2015-12-02 | 清华大学 | 一种可快速精细调节温度场空间分布的加热盘及控制方法 |
CN103757608B (zh) * | 2014-01-22 | 2016-05-11 | 清华大学 | 一种用于调节温度和功率空间分布的梯度阻抗模块 |
CN103726034B (zh) * | 2014-01-22 | 2017-01-25 | 清华大学 | 用于工艺腔室的基台及其控制方法、托盘及其设计方法 |
US9299537B2 (en) | 2014-03-20 | 2016-03-29 | Applied Materials, Inc. | Radial waveguide systems and methods for post-match control of microwaves |
US9903020B2 (en) | 2014-03-31 | 2018-02-27 | Applied Materials, Inc. | Generation of compact alumina passivation layers on aluminum plasma equipment components |
US9309598B2 (en) | 2014-05-28 | 2016-04-12 | Applied Materials, Inc. | Oxide and metal removal |
US9543171B2 (en) | 2014-06-17 | 2017-01-10 | Lam Research Corporation | Auto-correction of malfunctioning thermal control element in a temperature control plate of a semiconductor substrate support assembly that includes deactivating the malfunctioning thermal control element and modifying a power level of at least one functioning thermal control element |
US11302520B2 (en) * | 2014-06-28 | 2022-04-12 | Applied Materials, Inc. | Chamber apparatus for chemical etching of dielectric materials |
US9496167B2 (en) | 2014-07-31 | 2016-11-15 | Applied Materials, Inc. | Integrated bit-line airgap formation and gate stack post clean |
KR102411194B1 (ko) | 2014-09-04 | 2022-06-20 | 삼성전자주식회사 | 냉매의 양방향 흐름이 가능한 정전척 어셈블리 및 이를 구비한 반도체 제조장치 |
US9613822B2 (en) | 2014-09-25 | 2017-04-04 | Applied Materials, Inc. | Oxide etch selectivity enhancement |
US9966240B2 (en) | 2014-10-14 | 2018-05-08 | Applied Materials, Inc. | Systems and methods for internal surface conditioning assessment in plasma processing equipment |
US9355922B2 (en) | 2014-10-14 | 2016-05-31 | Applied Materials, Inc. | Systems and methods for internal surface conditioning in plasma processing equipment |
US11637002B2 (en) | 2014-11-26 | 2023-04-25 | Applied Materials, Inc. | Methods and systems to enhance process uniformity |
US10573496B2 (en) | 2014-12-09 | 2020-02-25 | Applied Materials, Inc. | Direct outlet toroidal plasma source |
US10224210B2 (en) | 2014-12-09 | 2019-03-05 | Applied Materials, Inc. | Plasma processing system with direct outlet toroidal plasma source |
US11257693B2 (en) * | 2015-01-09 | 2022-02-22 | Applied Materials, Inc. | Methods and systems to improve pedestal temperature control |
US20160225652A1 (en) | 2015-02-03 | 2016-08-04 | Applied Materials, Inc. | Low temperature chuck for plasma processing systems |
US9728437B2 (en) | 2015-02-03 | 2017-08-08 | Applied Materials, Inc. | High temperature chuck for plasma processing systems |
US9881805B2 (en) | 2015-03-02 | 2018-01-30 | Applied Materials, Inc. | Silicon selective removal |
CN104947088B (zh) * | 2015-06-16 | 2017-11-14 | 清华大学 | 调节温度场和/或等离子场的阻抗可控模块 |
US9741593B2 (en) | 2015-08-06 | 2017-08-22 | Applied Materials, Inc. | Thermal management systems and methods for wafer processing systems |
US9691645B2 (en) | 2015-08-06 | 2017-06-27 | Applied Materials, Inc. | Bolted wafer chuck thermal management systems and methods for wafer processing systems |
US9349605B1 (en) | 2015-08-07 | 2016-05-24 | Applied Materials, Inc. | Oxide etch selectivity systems and methods |
US10504700B2 (en) | 2015-08-27 | 2019-12-10 | Applied Materials, Inc. | Plasma etching systems and methods with secondary plasma injection |
US9805963B2 (en) * | 2015-10-05 | 2017-10-31 | Lam Research Corporation | Electrostatic chuck with thermal choke |
JP6584286B2 (ja) * | 2015-10-26 | 2019-10-02 | 日本発條株式会社 | ヒータユニット |
US10020218B2 (en) | 2015-11-17 | 2018-07-10 | Applied Materials, Inc. | Substrate support assembly with deposited surface features |
US10690414B2 (en) * | 2015-12-11 | 2020-06-23 | Lam Research Corporation | Multi-plane heater for semiconductor substrate support |
US10446419B2 (en) * | 2016-03-11 | 2019-10-15 | Toshiba Memory Corporation | Semiconductor manufacturing apparatus |
US10764966B2 (en) | 2016-05-10 | 2020-09-01 | Lam Research Corporation | Laminated heater with different heater trace materials |
US10667379B2 (en) * | 2016-05-10 | 2020-05-26 | Lam Research Corporation | Connections between laminated heater and heater voltage inputs |
US10522371B2 (en) | 2016-05-19 | 2019-12-31 | Applied Materials, Inc. | Systems and methods for improved semiconductor etching and component protection |
US10504754B2 (en) | 2016-05-19 | 2019-12-10 | Applied Materials, Inc. | Systems and methods for improved semiconductor etching and component protection |
US9865484B1 (en) | 2016-06-29 | 2018-01-09 | Applied Materials, Inc. | Selective etch using material modification and RF pulsing |
US10062575B2 (en) | 2016-09-09 | 2018-08-28 | Applied Materials, Inc. | Poly directional etch by oxidation |
US10629473B2 (en) | 2016-09-09 | 2020-04-21 | Applied Materials, Inc. | Footing removal for nitride spacer |
US10546729B2 (en) | 2016-10-04 | 2020-01-28 | Applied Materials, Inc. | Dual-channel showerhead with improved profile |
US9934942B1 (en) | 2016-10-04 | 2018-04-03 | Applied Materials, Inc. | Chamber with flow-through source |
US10062585B2 (en) | 2016-10-04 | 2018-08-28 | Applied Materials, Inc. | Oxygen compatible plasma source |
US10062579B2 (en) | 2016-10-07 | 2018-08-28 | Applied Materials, Inc. | Selective SiN lateral recess |
US9947549B1 (en) | 2016-10-10 | 2018-04-17 | Applied Materials, Inc. | Cobalt-containing material removal |
KR101958636B1 (ko) * | 2016-10-31 | 2019-03-18 | 세메스 주식회사 | 기판 지지 장치 및 이를 가지는 기판 처리 설비, 그리고 기판 처리 방법 |
US9768034B1 (en) | 2016-11-11 | 2017-09-19 | Applied Materials, Inc. | Removal methods for high aspect ratio structures |
US10163696B2 (en) | 2016-11-11 | 2018-12-25 | Applied Materials, Inc. | Selective cobalt removal for bottom up gapfill |
US10242908B2 (en) | 2016-11-14 | 2019-03-26 | Applied Materials, Inc. | Airgap formation with damage-free copper |
US10026621B2 (en) | 2016-11-14 | 2018-07-17 | Applied Materials, Inc. | SiN spacer profile patterning |
KR101910347B1 (ko) * | 2016-12-05 | 2018-10-23 | 주식회사 글로벌스탠다드테크놀로지 | 반도체 제조설비의 고도화 온도제어장치 |
US10566206B2 (en) | 2016-12-27 | 2020-02-18 | Applied Materials, Inc. | Systems and methods for anisotropic material breakthrough |
US10431429B2 (en) | 2017-02-03 | 2019-10-01 | Applied Materials, Inc. | Systems and methods for radial and azimuthal control of plasma uniformity |
US10403507B2 (en) | 2017-02-03 | 2019-09-03 | Applied Materials, Inc. | Shaped etch profile with oxidation |
US10043684B1 (en) | 2017-02-06 | 2018-08-07 | Applied Materials, Inc. | Self-limiting atomic thermal etching systems and methods |
US10319739B2 (en) | 2017-02-08 | 2019-06-11 | Applied Materials, Inc. | Accommodating imperfectly aligned memory holes |
US20180233321A1 (en) * | 2017-02-16 | 2018-08-16 | Lam Research Corporation | Ion directionality esc |
US10943834B2 (en) | 2017-03-13 | 2021-03-09 | Applied Materials, Inc. | Replacement contact process |
CN106893982A (zh) * | 2017-03-30 | 2017-06-27 | 京东方科技集团股份有限公司 | 一种冷却板和蒸镀装置 |
CN110462812A (zh) * | 2017-03-31 | 2019-11-15 | 朗姆研究公司 | 具有灵活的晶片温度控制的静电卡盘 |
US10319649B2 (en) | 2017-04-11 | 2019-06-11 | Applied Materials, Inc. | Optical emission spectroscopy (OES) for remote plasma monitoring |
US11276559B2 (en) | 2017-05-17 | 2022-03-15 | Applied Materials, Inc. | Semiconductor processing chamber for multiple precursor flow |
US11276590B2 (en) | 2017-05-17 | 2022-03-15 | Applied Materials, Inc. | Multi-zone semiconductor substrate supports |
US10049891B1 (en) | 2017-05-31 | 2018-08-14 | Applied Materials, Inc. | Selective in situ cobalt residue removal |
US10497579B2 (en) | 2017-05-31 | 2019-12-03 | Applied Materials, Inc. | Water-free etching methods |
US10920320B2 (en) | 2017-06-16 | 2021-02-16 | Applied Materials, Inc. | Plasma health determination in semiconductor substrate processing reactors |
US10541246B2 (en) | 2017-06-26 | 2020-01-21 | Applied Materials, Inc. | 3D flash memory cells which discourage cross-cell electrical tunneling |
US10727080B2 (en) | 2017-07-07 | 2020-07-28 | Applied Materials, Inc. | Tantalum-containing material removal |
US10541184B2 (en) | 2017-07-11 | 2020-01-21 | Applied Materials, Inc. | Optical emission spectroscopic techniques for monitoring etching |
US10354889B2 (en) | 2017-07-17 | 2019-07-16 | Applied Materials, Inc. | Non-halogen etching of silicon-containing materials |
US10170336B1 (en) | 2017-08-04 | 2019-01-01 | Applied Materials, Inc. | Methods for anisotropic control of selective silicon removal |
US10043674B1 (en) | 2017-08-04 | 2018-08-07 | Applied Materials, Inc. | Germanium etching systems and methods |
US10297458B2 (en) | 2017-08-07 | 2019-05-21 | Applied Materials, Inc. | Process window widening using coated parts in plasma etch processes |
US10283324B1 (en) | 2017-10-24 | 2019-05-07 | Applied Materials, Inc. | Oxygen treatment for nitride etching |
US10128086B1 (en) | 2017-10-24 | 2018-11-13 | Applied Materials, Inc. | Silicon pretreatment for nitride removal |
US11107708B2 (en) * | 2017-11-14 | 2021-08-31 | Taiwan Semiconductor Manufacturing Company, Ltd. | Heating platform, thermal treatment and manufacturing method |
US10256112B1 (en) | 2017-12-08 | 2019-04-09 | Applied Materials, Inc. | Selective tungsten removal |
US10903054B2 (en) | 2017-12-19 | 2021-01-26 | Applied Materials, Inc. | Multi-zone gas distribution systems and methods |
US11328909B2 (en) | 2017-12-22 | 2022-05-10 | Applied Materials, Inc. | Chamber conditioning and removal processes |
US10854426B2 (en) | 2018-01-08 | 2020-12-01 | Applied Materials, Inc. | Metal recess for semiconductor structures |
US10510564B2 (en) * | 2018-01-10 | 2019-12-17 | Lam Research Corporation | Dynamic coolant mixing manifold |
US10679870B2 (en) | 2018-02-15 | 2020-06-09 | Applied Materials, Inc. | Semiconductor processing chamber multistage mixing apparatus |
US10964512B2 (en) | 2018-02-15 | 2021-03-30 | Applied Materials, Inc. | Semiconductor processing chamber multistage mixing apparatus and methods |
TWI716818B (zh) | 2018-02-28 | 2021-01-21 | 美商應用材料股份有限公司 | 形成氣隙的系統及方法 |
US10593560B2 (en) | 2018-03-01 | 2020-03-17 | Applied Materials, Inc. | Magnetic induction plasma source for semiconductor processes and equipment |
US10319600B1 (en) | 2018-03-12 | 2019-06-11 | Applied Materials, Inc. | Thermal silicon etch |
US10497573B2 (en) | 2018-03-13 | 2019-12-03 | Applied Materials, Inc. | Selective atomic layer etching of semiconductor materials |
US10573527B2 (en) | 2018-04-06 | 2020-02-25 | Applied Materials, Inc. | Gas-phase selective etching systems and methods |
US10490406B2 (en) | 2018-04-10 | 2019-11-26 | Appled Materials, Inc. | Systems and methods for material breakthrough |
US10699879B2 (en) | 2018-04-17 | 2020-06-30 | Applied Materials, Inc. | Two piece electrode assembly with gap for plasma control |
US10886137B2 (en) | 2018-04-30 | 2021-01-05 | Applied Materials, Inc. | Selective nitride removal |
US10755941B2 (en) | 2018-07-06 | 2020-08-25 | Applied Materials, Inc. | Self-limiting selective etching systems and methods |
US10872778B2 (en) | 2018-07-06 | 2020-12-22 | Applied Materials, Inc. | Systems and methods utilizing solid-phase etchants |
US10672642B2 (en) | 2018-07-24 | 2020-06-02 | Applied Materials, Inc. | Systems and methods for pedestal configuration |
US11049755B2 (en) | 2018-09-14 | 2021-06-29 | Applied Materials, Inc. | Semiconductor substrate supports with embedded RF shield |
US10892198B2 (en) | 2018-09-14 | 2021-01-12 | Applied Materials, Inc. | Systems and methods for improved performance in semiconductor processing |
US11062887B2 (en) | 2018-09-17 | 2021-07-13 | Applied Materials, Inc. | High temperature RF heater pedestals |
US11417534B2 (en) | 2018-09-21 | 2022-08-16 | Applied Materials, Inc. | Selective material removal |
US11682560B2 (en) | 2018-10-11 | 2023-06-20 | Applied Materials, Inc. | Systems and methods for hafnium-containing film removal |
US11121002B2 (en) | 2018-10-24 | 2021-09-14 | Applied Materials, Inc. | Systems and methods for etching metals and metal derivatives |
US11437242B2 (en) | 2018-11-27 | 2022-09-06 | Applied Materials, Inc. | Selective removal of silicon-containing materials |
JP2020105590A (ja) * | 2018-12-27 | 2020-07-09 | キオクシア株式会社 | 基板処理装置および基板処理方法 |
US10770421B2 (en) * | 2018-12-29 | 2020-09-08 | Micron Technology, Inc. | Bond chucks having individually-controllable regions, and associated systems and methods |
US11721527B2 (en) | 2019-01-07 | 2023-08-08 | Applied Materials, Inc. | Processing chamber mixing systems |
US10920319B2 (en) | 2019-01-11 | 2021-02-16 | Applied Materials, Inc. | Ceramic showerheads with conductive electrodes |
JP2021149467A (ja) * | 2020-03-18 | 2021-09-27 | 株式会社Kelk | 温度制御システム |
CN111441038B (zh) * | 2020-03-20 | 2023-08-22 | 华南理工大学 | 一种基于化学气相沉积法的纳米材料打印机 |
CN111415887A (zh) * | 2020-03-27 | 2020-07-14 | 宁波润华全芯微电子设备有限公司 | 一种晶圆加热装置 |
CN113512665B (zh) * | 2021-07-14 | 2021-12-21 | 上海铂世光半导体科技有限公司 | 一种合金材料的特殊水道设计的散热台 |
CN118382720A (zh) * | 2021-10-29 | 2024-07-23 | 朗姆研究公司 | 控制喷头冷却的热传导性调节 |
WO2023239585A1 (en) * | 2022-06-07 | 2023-12-14 | Lam Research Corporation | Substrate temperature control with integrated thermoelectric cooling system |
CN116313946B (zh) * | 2023-05-24 | 2023-10-17 | 长鑫存储技术有限公司 | 温度调节***及调节方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006522452A (ja) * | 2003-03-31 | 2006-09-28 | ラム リサーチ コーポレーション | 温度制御された基板支持体表面を有する基板支持体 |
JP2008522446A (ja) * | 2004-12-02 | 2008-06-26 | ラム リサーチ コーポレイション | 空間温度分布の制御方法及び装置 |
Family Cites Families (44)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4948458A (en) * | 1989-08-14 | 1990-08-14 | Lam Research Corporation | Method and apparatus for producing magnetically-coupled planar plasma |
JPH0718438A (ja) * | 1993-06-17 | 1995-01-20 | Anelva Corp | 静電チャック装置 |
US5538529A (en) * | 1993-09-10 | 1996-07-23 | Bion Technologies, Inc. | Bioconverted nutrient rich humus |
JPH0863236A (ja) * | 1994-08-22 | 1996-03-08 | Komatsu Electron Kk | 温度制御装置 |
US5938943A (en) * | 1995-07-28 | 1999-08-17 | Applied Materials, Inc. | Near Substrate reactant Homogenization apparatus |
US5740016A (en) * | 1996-03-29 | 1998-04-14 | Lam Research Corporation | Solid state temperature controlled substrate holder |
US5802856A (en) * | 1996-07-31 | 1998-09-08 | Stanford University | Multizone bake/chill thermal cycling module |
US5846375A (en) * | 1996-09-26 | 1998-12-08 | Micron Technology, Inc. | Area specific temperature control for electrode plates and chucks used in semiconductor processing equipment |
US6107608A (en) * | 1997-03-24 | 2000-08-22 | Micron Technology, Inc. | Temperature controlled spin chuck |
US6866094B2 (en) * | 1997-12-31 | 2005-03-15 | Temptronic Corporation | Temperature-controlled chuck with recovery of circulating temperature control fluid |
US6415858B1 (en) * | 1997-12-31 | 2002-07-09 | Temptronic Corporation | Temperature control system for a workpiece chuck |
JPH11329926A (ja) * | 1998-05-11 | 1999-11-30 | Dainippon Screen Mfg Co Ltd | 基板冷却装置および基板冷却方法 |
US5996353A (en) * | 1998-05-21 | 1999-12-07 | Applied Materials, Inc. | Semiconductor processing system with a thermoelectric cooling/heating device |
JP2000031253A (ja) * | 1998-07-10 | 2000-01-28 | Komatsu Ltd | 基板処理装置及び方法 |
AU5448200A (en) * | 1999-05-27 | 2000-12-18 | Matrix Integrated Systems, Inc. | Rapid heating and cooling of workpiece chucks |
JP2004507886A (ja) * | 2000-07-21 | 2004-03-11 | テンプトロニック コーポレイション | 温度制御された自動試験用熱プラットフォーム |
JP3817414B2 (ja) * | 2000-08-23 | 2006-09-06 | 株式会社日立製作所 | 試料台ユニットおよびプラズマ処理装置 |
JP5000842B2 (ja) * | 2001-03-02 | 2012-08-15 | 東京エレクトロン株式会社 | サセプタの駆動温度制御のための方法並びに装置 |
US7161121B1 (en) * | 2001-04-30 | 2007-01-09 | Lam Research Corporation | Electrostatic chuck having radial temperature control capability |
JP4549022B2 (ja) * | 2001-04-30 | 2010-09-22 | ラム リサーチ コーポレイション | ワーク支持体の表面を横切る空間温度分布を制御する方法および装置 |
US6795292B2 (en) * | 2001-05-15 | 2004-09-21 | Dennis Grimard | Apparatus for regulating temperature of a process kit in a semiconductor wafer-processing chamber |
US7160105B2 (en) * | 2001-06-01 | 2007-01-09 | Litrex Corporation | Temperature controlled vacuum chuck |
US7479304B2 (en) * | 2002-02-14 | 2009-01-20 | Applied Materials, Inc. | Gas distribution plate fabricated from a solid yttrium oxide-comprising substrate |
US6771086B2 (en) * | 2002-02-19 | 2004-08-03 | Lucas/Signatone Corporation | Semiconductor wafer electrical testing with a mobile chiller plate for rapid and precise test temperature control |
US6664738B2 (en) * | 2002-02-27 | 2003-12-16 | Hitachi, Ltd. | Plasma processing apparatus |
US6677167B2 (en) * | 2002-03-04 | 2004-01-13 | Hitachi High-Technologies Corporation | Wafer processing apparatus and a wafer stage and a wafer processing method |
US6767844B2 (en) * | 2002-07-03 | 2004-07-27 | Taiwan Semiconductor Manufacturing Co., Ltd | Plasma chamber equipped with temperature-controlled focus ring and method of operating |
TWI260725B (en) * | 2002-07-11 | 2006-08-21 | Temptronic Corp | Workpiece chuck with temperature control assembly having spacers between layers providing clearance for thermoelectric modules and method for supporting a workpiece with the workpiece chuck |
US7347901B2 (en) * | 2002-11-29 | 2008-03-25 | Tokyo Electron Limited | Thermally zoned substrate holder assembly |
US20040163601A1 (en) * | 2003-02-26 | 2004-08-26 | Masanori Kadotani | Plasma processing apparatus |
US7221553B2 (en) * | 2003-04-22 | 2007-05-22 | Applied Materials, Inc. | Substrate support having heat transfer system |
US7993460B2 (en) * | 2003-06-30 | 2011-08-09 | Lam Research Corporation | Substrate support having dynamic temperature control |
US7663860B2 (en) * | 2003-12-05 | 2010-02-16 | Tokyo Electron Limited | Electrostatic chuck |
US7244336B2 (en) * | 2003-12-17 | 2007-07-17 | Lam Research Corporation | Temperature controlled hot edge ring assembly for reducing plasma reactor etch rate drift |
CN100452306C (zh) * | 2004-01-30 | 2009-01-14 | 东京毅力科创株式会社 | 具有流体间隙的衬底保持器和制造衬底保持器的方法 |
US8038796B2 (en) * | 2004-12-30 | 2011-10-18 | Lam Research Corporation | Apparatus for spatial and temporal control of temperature on a substrate |
US7815740B2 (en) * | 2005-03-18 | 2010-10-19 | Tokyo Electron Limited | Substrate mounting table, substrate processing apparatus and substrate processing method |
US7789962B2 (en) * | 2005-03-31 | 2010-09-07 | Tokyo Electron Limited | Device and method for controlling temperature of a mounting table, a program therefor, and a processing apparatus including same |
US7429718B2 (en) * | 2005-08-02 | 2008-09-30 | Applied Materials, Inc. | Heating and cooling of substrate support |
US8709162B2 (en) * | 2005-08-16 | 2014-04-29 | Applied Materials, Inc. | Active cooling substrate support |
US8343280B2 (en) * | 2006-03-28 | 2013-01-01 | Tokyo Electron Limited | Multi-zone substrate temperature control system and method of operating |
US8226769B2 (en) * | 2006-04-27 | 2012-07-24 | Applied Materials, Inc. | Substrate support with electrostatic chuck having dual temperature zones |
US20080029032A1 (en) * | 2006-08-01 | 2008-02-07 | Sun Jennifer Y | Substrate support with protective layer for plasma resistance |
JP5032269B2 (ja) * | 2007-11-02 | 2012-09-26 | 東京エレクトロン株式会社 | 被処理基板の温度調節装置及び温度調節方法、並びにこれを備えたプラズマ処理装置 |
-
2008
- 2008-11-12 US US12/292,081 patent/US20100116788A1/en not_active Abandoned
-
2009
- 2009-11-03 KR KR1020167033652A patent/KR20160141873A/ko active Search and Examination
- 2009-11-03 KR KR1020117010737A patent/KR20110083666A/ko active Search and Examination
- 2009-11-03 WO PCT/IB2009/054876 patent/WO2010055441A2/en active Application Filing
- 2009-11-03 EP EP09825828.8A patent/EP2366039A4/en not_active Withdrawn
- 2009-11-03 CN CN201610088237.9A patent/CN105603376A/zh active Pending
- 2009-11-03 CN CN2009801429632A patent/CN102197156A/zh active Pending
- 2009-11-03 JP JP2011543856A patent/JP5546552B2/ja active Active
- 2009-11-12 TW TW105114077A patent/TWI589719B/zh active
- 2009-11-12 TW TW098138394A patent/TWI546408B/zh active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006522452A (ja) * | 2003-03-31 | 2006-09-28 | ラム リサーチ コーポレーション | 温度制御された基板支持体表面を有する基板支持体 |
JP2008522446A (ja) * | 2004-12-02 | 2008-06-26 | ラム リサーチ コーポレイション | 空間温度分布の制御方法及び装置 |
Cited By (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2017208562A (ja) * | 2012-04-26 | 2017-11-24 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | Escの接着剤の浸食を防止するための方法及び装置 |
KR20190010731A (ko) * | 2013-05-07 | 2019-01-30 | 어플라이드 머티어리얼스, 인코포레이티드 | 최소의 크로스토크를 갖는 열적으로 격리된 구역들을 갖는 정전 척 |
KR102226167B1 (ko) * | 2013-05-07 | 2021-03-09 | 어플라이드 머티어리얼스, 인코포레이티드 | 최소의 크로스토크를 갖는 열적으로 격리된 구역들을 갖는 정전 척 |
JP2016526289A (ja) * | 2013-05-07 | 2016-09-01 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 最小限のクロストークで熱的に分離されたゾーンを有する静電チャック |
KR102295684B1 (ko) * | 2013-05-07 | 2021-08-27 | 어플라이드 머티어리얼스, 인코포레이티드 | 최소의 크로스토크를 갖는 열적으로 격리된 구역들을 갖는 정전 척 |
KR102305541B1 (ko) * | 2013-05-07 | 2021-09-24 | 어플라이드 머티어리얼스, 인코포레이티드 | 최소의 크로스토크를 갖는 열적으로 격리된 구역들을 갖는 정전 척 |
KR20170102051A (ko) * | 2013-05-07 | 2017-09-06 | 어플라이드 머티어리얼스, 인코포레이티드 | 최소의 크로스토크를 갖는 열적으로 격리된 구역들을 갖는 정전 척 |
KR20160006693A (ko) * | 2013-05-07 | 2016-01-19 | 어플라이드 머티어리얼스, 인코포레이티드 | 최소의 크로스토크를 갖는 열적으로 격리된 구역들을 갖는 정전 척 |
JP2018026571A (ja) * | 2013-05-07 | 2018-02-15 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 最小限のクロストークで熱的に分離されたゾーンを有する静電チャック |
JP2019083331A (ja) * | 2013-05-07 | 2019-05-30 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 最小限のクロストークで熱的に分離されたゾーンを有する静電チャック |
JP2017506828A (ja) * | 2014-02-12 | 2017-03-09 | アクセリス テクノロジーズ, インコーポレイテッド | 広温度範囲チャックに対する複数流体冷却システム |
JP2017519373A (ja) * | 2014-05-16 | 2017-07-13 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | ペデスタルの流体による熱制御 |
KR102307839B1 (ko) | 2014-10-24 | 2021-10-05 | 세메스 주식회사 | 웨이퍼 지지용 척 구조물 |
KR20160049071A (ko) * | 2014-10-24 | 2016-05-09 | 세메스 주식회사 | 웨이퍼 지지용 척 구조물 |
JP2018503965A (ja) * | 2014-11-26 | 2018-02-08 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 比例式熱流体送達システムを使用した基板キャリア |
JP7301903B2 (ja) | 2014-11-26 | 2023-07-03 | アプライド マテリアルズ インコーポレイテッド | 比例式熱流体送達システムを使用した基板キャリア |
JP2021132219A (ja) * | 2014-11-26 | 2021-09-09 | アプライド マテリアルズ インコーポレイテッドApplied Materials, Incorporated | 比例式熱流体送達システムを使用した基板キャリア |
US11615973B2 (en) | 2014-11-26 | 2023-03-28 | Applied Materials, Inc. | Substrate carrier using a proportional thermal fluid delivery system |
JP7072383B2 (ja) | 2014-11-26 | 2022-05-20 | アプライド マテリアルズ インコーポレイテッド | 比例式熱流体送達システムを使用した基板キャリア |
KR20180028400A (ko) * | 2015-08-06 | 2018-03-16 | 어플라이드 머티어리얼스, 인코포레이티드 | 웨이퍼 프로세싱 시스템들을 위한 열 관리 시스템들 및 방법들 |
KR102652012B1 (ko) | 2015-08-06 | 2024-03-27 | 어플라이드 머티어리얼스, 인코포레이티드 | 웨이퍼 프로세싱 시스템들을 위한 열 관리 시스템들 및 방법들 |
JP2020505764A (ja) * | 2017-01-16 | 2020-02-20 | イーアールエス エレクトロニック ゲーエムベーハーERS electronic GmbH | 基板の温度を制御するための装置及びその製造方法 |
KR20220052998A (ko) * | 2019-08-27 | 2022-04-28 | 와틀로 일렉트릭 매뉴팩츄어링 컴파니 | 반도체 웨이퍼 홀더를 위한 열 디퓨저 |
KR102524609B1 (ko) | 2019-08-27 | 2023-04-21 | 와틀로 일렉트릭 매뉴팩츄어링 컴파니 | 반도체 웨이퍼 홀더를 위한 열 디퓨저 |
JP2021184461A (ja) * | 2020-05-22 | 2021-12-02 | サムス カンパニー リミテッド | 静電チャック及びその製造方法と基板処理装置 |
JP7290687B2 (ja) | 2020-05-22 | 2023-06-13 | サムス カンパニー リミテッド | 静電チャック及びその製造方法と基板処理装置 |
KR102688227B1 (ko) * | 2022-02-28 | 2024-07-26 | 주식회사 이에스티 | 세라믹 시트 타입 저온 정전척 |
KR102688226B1 (ko) * | 2022-02-28 | 2024-07-26 | 주식회사 이에스티 | 코팅 타입 저온 정전척 |
Also Published As
Publication number | Publication date |
---|---|
KR20160141873A (ko) | 2016-12-09 |
WO2010055441A3 (en) | 2010-07-08 |
TWI589719B (zh) | 2017-07-01 |
TWI546408B (zh) | 2016-08-21 |
CN102197156A (zh) | 2011-09-21 |
TW201631190A (zh) | 2016-09-01 |
US20100116788A1 (en) | 2010-05-13 |
CN105603376A (zh) | 2016-05-25 |
KR20110083666A (ko) | 2011-07-20 |
JP5546552B2 (ja) | 2014-07-09 |
TW201033398A (en) | 2010-09-16 |
EP2366039A4 (en) | 2013-09-18 |
WO2010055441A2 (en) | 2010-05-20 |
EP2366039A2 (en) | 2011-09-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5546552B2 (ja) | 液体を制御された複数領域基板支持体による改良基板温度制御 | |
US12002661B2 (en) | Susceptor having cooling device | |
US10062587B2 (en) | Pedestal with multi-zone temperature control and multiple purge capabilities | |
JP6076246B2 (ja) | ゾーン依存熱効率性を備えた温度制御されたプラズマ処理チャンバ部品 | |
US8083855B2 (en) | Temperature control module using gas pressure to control thermal conductance between liquid coolant and component body | |
TWI780597B (zh) | 具有獨立隔離的加熱器區域的晶圓載體 | |
JP5006200B2 (ja) | 半導体処理の均一性を改善するための熱伝達システム | |
JP2022020732A (ja) | 極めて均一性が高い加熱基板支持アセンブリ | |
JP4969259B2 (ja) | プラズマ処理装置 | |
US20090194264A1 (en) | Substrate mounting table, substrate processing apparatus and substrate temperature control method | |
WO2014116434A1 (en) | Substrate processing chamber components incorporating anisotropic materials | |
US11784080B2 (en) | High temperature micro-zone electrostatic chuck | |
WO2022066240A1 (en) | Axially cooled metal showerheads for high temperature processes | |
US11482444B2 (en) | High temperature micro-zone electrostatic chuck | |
KR102632472B1 (ko) | 기판 지지대 및 그를 포함하는 기판처리장치 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20121024 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20131126 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140225 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20140430 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20140513 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5546552 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |