JP2011176321A - 転写リソグラフィ・プロセスのための自動液体ディスペンス方法およびシステム - Google Patents
転写リソグラフィ・プロセスのための自動液体ディスペンス方法およびシステム Download PDFInfo
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Abstract
【解決手段】平板状の物質または転写リソグラフィ・プロセス用の半導体ウエハを含む基板の表面に液体をディスペンスする自動液体ディスペンス方法とシステムが開示されている。本ディスペンス方法は液体ディスペンサ・チップと基板との間の相対的な動きを生成する基板ステージと液体ディスペンサを使用する。さらに、パターン化されていない平坦なテンプレートを用いて基板表面を平坦にする方法と装置も開示されている。
【選択図】図3
Description
1.発明の分野
本発明は一般に転写リソグラフィ(imprint lithography)・プロセスに適用することができる液体ディスペンス・システムおよびディスペンス方法に関する。
転写リソグラフィは、サイズが50nm未満のフィーチャを基板に印刷することができる技法である。転写リソグラフィは、100nm未満のレジームにおける半導体製造のための選択肢として、フォトリソグラフィに取って代わる潜在力を有している。いくつかの転写リソグラフィ・プロセスが1990年代の間に導入されたが、それらのほとんどは、フォトリソグラフィに取って代わる実際的な代用として使用できない複数の限界を有している。これら従来技術の限界として、例えば温度による変化が大きいこと、高圧を必要とすること、およびフレキシブル・テンプレートを使用しなければならないことが挙げられる。
基板にパターンを形成する方法は、基板へ光硬化液を設けることによって達成される。光硬化液は光が存在する中で化学変化する組成物である。化学変化をもたらす光には、紫外光(例えば、約300nmと約400nmの間の波長を有する光)、化学光、可視光、赤外光、および電子ビーム源およびx線源などの放射源がある。化学変化は様々な形で現われる。化学変化には、他にもあるが、重合をもたらすあらゆる化学反応が含まれている。実施形態の中には、化学変化によって、レンズを形成している組成物内に、化学重合反応を開始させることができる開始剤を形成している実施態様もある。
本明細書に示す実施形態は、一般にシステム、デバイス、および小型デバイスの製造に関連する製造プロセスに関している。より詳細には、本明細書に示す実施形態は、システム、デバイス、および転写リソグラフィに関連するプロセスに関している。例えば、これらの実施形態は、半導体ウェハなどの基板上に極めて小さいフィーチャを転写することの応用を有している。これらの実施形態が、上記の応用の他に、例えば費用有効性の高い超小型電気機械システム(すなわちMEMS:Micro-Electro-Mechanical System)の製造など、他のタスクへの応用を有していることを理解すべきである。また、実施形態は、これには限らないが、データ記憶用パターン化磁気媒体、マイクロ光学デバイス、生物および化学デバイス、X線光学デバイス等を始めとする他の種類のデバイスの製造に対する応用を有している。
R-SiCl3+3H2O=>R-Si(OH)3+3HCl
によって記述することができる。反応を容易にするために、テンプレートの温度を、温度制御チャックを介して所望の反応温度にすることができる。次に、所定時間の間、反応容器に前駆体が供給される。テンプレート温度、前駆体濃度、流れ幾何学等の反応パラメータは、特定の前駆体とテンプレート基板の組合せに合せることができる。
1.気泡をテンプレートと基板の間にトラップさせてはならない。
2.粒子の発生を最小にするために、ディスペンサ・チップと基板の間の直接接触を回避しなければならない。
3.テンプレートと基板の間のギャップを充填するために必要な圧力を最小にしなければならない。
4.テンプレート−基板界面の非一様な局部変形を小さくするために、非一様な液体ビルドアップおよび/または圧力勾配を最小にしなければならない。
5.ディスペンス液体の浪費を最小にしなければならない。
Vd=Vd/td(ディスペンスボリューム/ディスペンス周期) (1)
Vs=L/td(線の長さ/ディスペンス周期) (2)
Vd=aL(「a」は、線パターンの断面積) (3)
したがって
Vd=aVs (4)
初期の線パターンの幅は、通常、ディスペンサのチップ・サイズによって決まる。チップ・ディスペンサは固定されている。一実施形態では、液体ディスペンス・コントローラ1111(図11に示す)を使用して、ディスペンスされる液体のボリューム(Vd)および液体をディスペンスするために要する時間(td)が制御されている。Vdおよびtdが一定であると仮定すると、線の長さを長くすることにより、パターン化される線の断面の高さが低くなる。パターン長さの延長は、周期パターンの空間周波数を増加させることによって達成される。パターンの高さを低くすることにより、転写プロセス中に変位する液体の量が少なくなる。同じディスペンス線に接続された複数のチップを使用することにより、単一ディスペンサ・チップの場合と比較して、長さの長い線パターンをより速く形成することができる。一実施形態では、吐出ベース液体デリバリ・システムは、液体容器1101、入口チューブ1102、入口弁1103、出口弁1104、シリンジ1105、シリンジ・アクチュエータ1106、ディスペンサ・チップ1107、Xステージ・アクチュエータ1109、Yステージ・アクチュエータ1110、ディスペンサ・コントローラ1111、XYステージコントローラ1112および主制御コンピュータ1113を備えている。適切な吐出ベース・ディスペンサは、Hamilton社から購入することができる。
1. オーバレイ誤差測定ツールは、同一平面上ではない2つのオーバレイ・マークに焦点を合せることができなければならない。
2. オーバレイ誤差補正ツールは、テンプレートと基板の間に液体の薄層が存在している状態で、テンプレートおよび基板をXおよびYに相対的に移動させることができなければならない。
3. オーバレイ誤差補正ツールは、テンプレートと基板の間に液体の薄層が存在している状態で、シータ誤差を補償することができなければならない。
4. オーバレイ誤差補正ツールは、倍率誤差を補償することができなければならない。
d=p1/(Δw×2n) (8)
上式で、Δw=wf−ws、wf=1/λminおよびws=1/λmaxである。
・ケース1 WW0:局部最小がw1に存在する場合。したがってw1=周期振動の半分、故にd=0.5/(w1×2n)
・ケース2 WW1:局部最大がw2に存在する場合。したがってw2=周期振動の1周期、故にd=1/(w2×2n)
hp=[(h1+h2+h3)/3]−hs (9)
で与えられる。プローブの位置が分かれば((xi、yi)、ただしx軸およびy軸は基板表面上)、基板に対するテンプレートの相対配向を、x−y軸が基板の頂部表面上に位置しているフレームに対するテンプレート表面に垂直をなす単位ベクトル(n)で表すことができる。
n=r/‖r‖ (10)
上式で、r=[(x3、y3、h3)−(x1、y1、h1)]×[(x2、y2、h2)−(x1、y1、h1)]である。n=(001)Tまたはh1=h2=h3のとき、2つの平面の間の完全な配向アライメントが達成される。
Claims (2)
- 基板の表面を平らにする方法であって、
基板の少なくとも一部に活性化光硬化液を塗布するステップと、
塗布された活性化光硬化液がギャップを実質的に充填するように、テンプレートが基板に対して間隔を隔てて配置され、テンプレートと基板の間にギャップが生成されるように、実質的にパターン化されていない平らなテンプレートおよび基板を互いに間隔を隔てて位置決めするステップと、
テンプレートと基板表面が実質的に平行になるようにテンプレートを調整するステップと、
活性化光の照射によって活性化光硬化液が実質的に硬化させるように、活性化光硬化液に活性化光を照射するステップと、
テンプレートと硬化した活性化光硬化液を分離するステップと、
から構成されることを特徴とする方法。 - 基板を平らにするためのシステムであって、
頂部フレームと、
頂部フレームに結合された配向ステージであって、配向ステージが、
使用中、第1の配向軸の周りにピボットするようになされた第1のたわみ部材と、
使用中、第2の配向軸の周りにピボットするようになされた、第1のたわみ部材に結合された第2のたわみ部材と、
使用中、第2のたわみ部材に結合され、パターン化されたテンプレートを保持するサポートとを備え、パターン化されたテンプレートがサポート中に配置されて、パターン化されたテンプレートが、使用中、第1および第2の配向軸が交差するピボット・ポイントの周りを移動するように、第2のたわみ部材が第1のたわみ部材に結合された配向ステージと、
サポート中に配置される、実質的に平らなパターン化されていないテンプレートと、
配向ステージの下側に位置付けされた、基板を支持するようになされた基板ステージと、
から構成されることを特徴とするシステム。
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JP2011181944A (ja) * | 2006-04-18 | 2011-09-15 | Canon Inc | インプリント方法およびインプリント装置 |
JP2013089663A (ja) * | 2011-10-14 | 2013-05-13 | Canon Inc | インプリント装置、それを用いた物品の製造方法 |
JP2013214627A (ja) * | 2012-04-03 | 2013-10-17 | Dainippon Printing Co Ltd | ナノインプリント用マスターテンプレート及びレプリカテンプレートの製造方法 |
JP2014229883A (ja) * | 2013-05-27 | 2014-12-08 | キヤノン株式会社 | インプリント方法、インプリント装置及びデバイス製造方法 |
JP2016131257A (ja) * | 2016-04-06 | 2016-07-21 | 大日本印刷株式会社 | ナノインプリント用マスターテンプレート及びレプリカテンプレートの製造方法 |
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US11320591B2 (en) | 2018-10-16 | 2022-05-03 | Magic Leap, Inc. | Methods and apparatuses for casting polymer products |
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EP2270592A2 (en) | 2011-01-05 |
US20080199816A1 (en) | 2008-08-21 |
WO2002006902A2 (en) | 2002-01-24 |
JP4740518B2 (ja) | 2011-08-03 |
EP1303793A2 (en) | 2003-04-23 |
KR20030079910A (ko) | 2003-10-10 |
EP2270592A3 (en) | 2011-11-30 |
US9223202B2 (en) | 2015-12-29 |
KR100827741B1 (ko) | 2008-05-07 |
CN1455888A (zh) | 2003-11-12 |
JP5325914B2 (ja) | 2013-10-23 |
AU2001277907A1 (en) | 2002-01-30 |
EP1303793B1 (en) | 2015-01-28 |
EP2270592B1 (en) | 2015-09-02 |
WO2002006902A3 (en) | 2002-10-03 |
JP2004504714A (ja) | 2004-02-12 |
US20020094496A1 (en) | 2002-07-18 |
CN1262883C (zh) | 2006-07-05 |
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