JP2011119673A - 非線形素子、該非線形素子を有する表示装置および該表示装置を有する電子機器 - Google Patents
非線形素子、該非線形素子を有する表示装置および該表示装置を有する電子機器 Download PDFInfo
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- JP2011119673A JP2011119673A JP2010239780A JP2010239780A JP2011119673A JP 2011119673 A JP2011119673 A JP 2011119673A JP 2010239780 A JP2010239780 A JP 2010239780A JP 2010239780 A JP2010239780 A JP 2010239780A JP 2011119673 A JP2011119673 A JP 2011119673A
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- electrode
- oxide semiconductor
- semiconductor layer
- insulating film
- diode
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- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
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Abstract
【解決手段】水素濃度が5×1019/cm3以下である酸化物半導体を有する薄膜トランジスタにおいて、酸化物半導体に接するソース電極の仕事関数φmsと、酸化物半導体に接するドレイン電極の仕事関数φmdと、酸化物半導体の電子親和力χが、φms≦χ<φmdの関係になるように構成する。また、薄膜トランジスタのゲート電極とドレイン電極を電気的に接続することで、さらに整流特性の良い非線形素子を実現することができる。
【選択図】図4
Description
本実施の形態では、酸化物半導体を用いた非線形素子の一形態として、仕事関数差を利用したダイオードについて、図1を参照して説明する。
φmc≦χ<φma・・・式1
本実施の形態では、図4を用いて非線形素子の一形態として実施の形態1で説明した2端子型ダイオードを、電界効果型トランジスタ、例えば薄膜トランジスタを用いて3端子型ダイオードとする例について説明する。
φms≦χ<φmd・・・式2
本実施の形態では、本発明の一態様である、実施の形態2に示したダイオードの構造の一例について、図6を用いて説明する。本実施の形態にて説明するダイオードは、電界効果型トランジスタ、例えば薄膜トランジスタのソース電極またはドレイン電極にゲート電極が接続されたものである。
本実施の形態では、非線形素子の一態様であるダイオードの一例であって、実施の形態3とは異なる構造のものについて、図8を用いて説明する。本実施の形態にて説明するダイオードは、電界効果型トランジスタ、例えば薄膜トランジスタのソースまたはドレインにゲートが接続されたものである。
本実施の形態では、非線形素子の一態様であるダイオードの一例であって、実施の形態3及び実施の形態4とは異なる構造のものについて、図10を用いて説明する。本実施の形態にて説明するダイオードは、電界効果型トランジスタ、例えば薄膜トランジスタのソースまたはドレインにゲートが接続されたものである。
本実施の形態では、図6に示すダイオード接続された薄膜トランジスタの作製工程について、図12を用いて説明する。
本実施の形態では、実施の形態6とは異なる形態の酸化物半導体膜を有するダイオード接続された薄膜トランジスタとその作製方法について、図12及び図13を用いて説明する。
本実施の形態では、図6に示すダイオード接続された薄膜トランジスタの作製工程であって、実施の形態6とは異なるものについて、図12を用いて説明する。
上記実施の形態にて説明したダイオードなどの非線形素子は、半導体装置に適用することができる。半導体装置として、例えば表示装置を挙げることができる。
実施の形態9で説明した保護回路を有する表示装置は、電子機器に適用することができる。
103 絶縁膜
105 電極
106 電極
107 酸化物半導体層
108 基板温度
109 電極
111 ゲート絶縁膜
113 電極
115 電極
117 絶縁膜
119 コンタクトホール
121 コンタクトホール
123 コンタクトホール
125 配線
129 配線
131 配線
132 配線
133 薄膜トランジスタ
141 薄膜トランジスタ
143 薄膜トランジスタ
145 薄膜トランジスタ
151 酸化物半導体層
153 鎖線部
155 非晶質領域
157 結晶粒
200 基板
201 画素部
202 入力端子
203 入力端子
204 保護回路
205 保護回路
206 保護回路
207 保護回路
208 配線
209 配線
211 保護ダイオード
212 保護ダイオード
213 保護ダイオード
214 保護ダイオード
215 配線
216 保護ダイオード
217 保護ダイオード
220 保護ダイオード
221 保護ダイオード
222 容量素子
223 容量素子
224 抵抗素子
225 配線
230 保護ダイオード
231 保護ダイオード
232 保護ダイオード
233 保護ダイオード
234 保護ダイオード
235 保護ダイオード
236 保護ダイオード
237 保護ダイオード
238 抵抗素子
240 抵抗素子
241 抵抗素子
242 保護ダイオード
243 配線
300 筐体
301 支持台
302 表示部
310 壁
311 筐体
312 表示部
313 表示部
314 操作キー
315 リモコン操作機
320 本体
321 筐体
322 表示部
323 キーボード
324 外部接続ポート
325 ポインティングデバイス
601 基板
603 絶縁膜
605 電極
607 酸化物半導体層
609 電極
611 ゲート絶縁膜
613 電極
615 電極
617 絶縁膜
625 配線
629 配線
633 薄膜トランジスタ
701 基板
703 絶縁膜
705 導電層
707 酸化物半導体層
709 導電層
711 絶縁膜
801 アノード
802 酸化物半導体
803 カソード
813 フェルミレベル
820 準位
821 エネルギー障壁
822 伝導帯
823 エネルギー障壁
851 曲線
852 曲線
211a n型薄膜トランジスタ
211b n型薄膜トランジスタ
239A 配線
239B 配線
Claims (16)
- 基板上に形成される第1の電極と、
前記第1の電極上に接して形成される二次イオン質量分析法で検出される水素濃度が5×1019/cm3以下である酸化物半導体層と、
前記酸化物半導体層上に接して形成される第2の電極と、を有し、
前記第1の電極の仕事関数φma、前記酸化物半導体層の電子親和力χ、前記第2の電極の仕事関数φmcが、φmc≦χ<φmaであることを特徴とする非線形素子。 - 請求項1において、
前記第1の電極材料が、タングステン(W)、モリブデン(Mo)、クロム(Cr)、鉄(Fe)または酸化インジウム錫(ITO)であることを特徴とする非線形素子。 - 請求項1または請求項2のいずれか一において、
前記第2の電極材料が、チタン(Ti)、イットリウム(Y)、アルミニウム(Al)、マグネシウム(Mg)、銀(Ag)またはジルコニウム(Zr)であることを特徴とする非線形素子。 - 請求項1乃至請求項3のいずれか一において、
前記第1の電極の仕事関数φmaと前記酸化物半導体層の電子親和力χの差が0.2eV以上であることを特徴とする非線形素子。 - 請求項1乃至請求項4のいずれか一において、
前記酸化物半導体層は、キャリア濃度が5×1014/cm3以下であることを特徴とする非線形素子。 - 請求項1乃至請求項5のいずれか一に記載の非線形素子を有する保護回路が設けられた表示装置。
- 請求項6に記載の表示装置が用いられた電子機器。
- 基板上に形成される第1の電極と、
前記第1の電極上に接して形成される二次イオン質量分析法で検出される水素濃度が5×1019/cm3以下である酸化物半導体層と、
前記酸化物半導体層上に接して形成される第2の電極と、
前記第1の電極、前記酸化物半導体層、及び前記第2の電極を覆うゲート絶縁膜と、
前記ゲート絶縁膜に接して形成され、前記第1の電極、前記酸化物半導体層、及び前記第2の電極を介して対向する複数の第3の電極と、を有し、
前記複数の第3の電極は、前記第1の電極と接続されており、
前記第1の電極の仕事関数φmd、前記酸化物半導体層の電子親和力χ、前記第2の電極の仕事関数φmsが、φms≦χ<φmdであることを特徴とする非線形素子。 - 請求項8において、
前記第1の電極材料が、タングステン(W)、モリブデン(Mo)、クロム(Cr)、鉄(Fe)または酸化インジウム錫(ITO)であることを特徴とする非線形素子。 - 請求項8乃至請求項9のいずれか一において、
前記第2の電極材料が、チタン(Ti)、イットリウム(Y)、アルミニウム(Al)、マグネシウム(Mg)、銀(Ag)またはジルコニウム(Zr)であることを特徴とする非線形素子。 - 請求項8乃至請求項10のいずれか一において、
前記酸化物半導体層は、キャリア濃度が5×1014/cm3以下であることを特徴とする非線形素子。 - 請求項8乃至請求項11のいずれか一において、
前記第1の電極の仕事関数φmdと前記酸化物半導体層の電子親和力χの差が0.2eV以上であることを特徴とする非線形素子。 - 請求項8乃至請求項12のいずれか一において、
前記ゲート絶縁膜は、少なくとも前記酸化物半導体層に接する部分が酸化物絶縁膜であることを特徴とする非線形素子。 - 請求項8乃至請求項13のいずれか一において、
前記酸化物絶縁膜は酸化シリコン膜であり、
前記酸化シリコン膜は、窒化シリコンにより覆われていることを特徴とする非線形素子。 - 請求項8乃至請求項14のいずれか一に記載の非線形素子を有する保護回路が設けられた表示装置。
- 請求項15に記載の表示装置が用いられた電子機器。
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JP2015111636A (ja) * | 2013-12-06 | 2015-06-18 | 日亜化学工業株式会社 | 発光装置及び発光装置の製造方法 |
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TW201533881A (zh) | 2015-09-01 |
JP5667834B2 (ja) | 2015-02-12 |
US9385114B2 (en) | 2016-07-05 |
US8492806B2 (en) | 2013-07-23 |
TWI431673B (zh) | 2014-03-21 |
TW201419391A (zh) | 2014-05-16 |
JP2015092601A (ja) | 2015-05-14 |
WO2011052437A1 (en) | 2011-05-05 |
US8791456B2 (en) | 2014-07-29 |
TW201207910A (en) | 2012-02-16 |
JP2013016827A (ja) | 2013-01-24 |
US20140327002A1 (en) | 2014-11-06 |
JP5160693B2 (ja) | 2013-03-13 |
JP5984905B2 (ja) | 2016-09-06 |
TWI496198B (zh) | 2015-08-11 |
US20130222955A1 (en) | 2013-08-29 |
TWI555164B (zh) | 2016-10-21 |
US20110101338A1 (en) | 2011-05-05 |
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