JP2010512649A - プラズマ浸漬イオン注入プロセス - Google Patents
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- 238000000034 method Methods 0.000 title claims abstract description 97
- 230000008569 process Effects 0.000 title claims abstract description 52
- 238000005468 ion implantation Methods 0.000 title claims abstract description 23
- 238000007654 immersion Methods 0.000 title claims abstract description 15
- 239000007789 gas Substances 0.000 claims abstract description 150
- 239000000758 substrate Substances 0.000 claims abstract description 91
- 150000002500 ions Chemical class 0.000 claims abstract description 67
- 239000000203 mixture Substances 0.000 claims abstract description 43
- 239000012495 reaction gas Substances 0.000 claims abstract description 18
- 239000001257 hydrogen Substances 0.000 claims abstract description 11
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 11
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 10
- 239000006227 byproduct Substances 0.000 claims description 12
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 8
- 239000011261 inert gas Substances 0.000 claims description 7
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 238000005086 pumping Methods 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- 238000009826 distribution Methods 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000002411 adverse Effects 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 4
- -1 hydrogen ions Chemical class 0.000 description 4
- 229920000642 polymer Polymers 0.000 description 4
- 239000007943 implant Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910002601 GaN Inorganic materials 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000010494 dissociation reaction Methods 0.000 description 2
- 230000005593 dissociations Effects 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 108010000020 Platelet Factor 3 Proteins 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000007086 side reaction Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
- H01L21/2236—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase from or into a plasma phase
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
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Abstract
【解決手段】 一実施形態において、プラズマ浸漬イオン注入プロセスによって基板内にイオンを注入する方法は、処理チャンバ内に基板を準備するステップと、反応ガスと還元ガスを含むガス混合物をチャンバ内に供給するステップと、ガス混合物からのイオンを基板内に注入するステップとを含んでいる。他の実施形態において、方法は、処理チャンバ内に基板を準備するステップと、反応ガスと水素含有還元ガスを含むガス混合物をチャンバ内に供給するステップと、ガス混合物からのイオンを基板内に注入するステップとを含んでいる。
【選択図】 図1A
Description
[0001]本発明の実施形態は、一般的には、半導体製造プロセスとデバイスの分野に関し、より詳細には、プラズマ浸漬イオン注入プロセスによって基板内にイオンを注入する方法に関する。
[0002]集積回路は、基板(例えば、半導体ウエハ)上に形成される百万を超えるマイクロ電界効果型トランジスタ(例えば、相補型金属酸化半導体(CMOS)電界効果型トランジスタ)を含み、回路内で様々な機能を行うように協調することができるものである。CMOSトランジスタは、基板内に形成されるソース領域とドレイン領域の間に配置されるゲート構造を備えている。ゲート構造は、一般に、ゲート電極とゲート誘電体層を備えている。ゲート電極は、ゲート誘電体層の下のドレイン領域とソース領域の間に形成されるチャンネル領域において荷電キャリアの流れを制御するようにゲート誘電体層の上に配置される。
Claims (27)
- プラズマ浸漬イオン注入プロセスによって基板内にイオンを注入する方法であって:
処理チャンバ内に基板を準備するステップと;
該チャンバ内に反応ガスと還元ガスを含むガス混合物からプラズマを生成させるステップと;
該基板内に該プラズマからのイオンを注入するステップと;
を含む、前記方法。 - 該反応ガスが、BF3、B2H6、BCl3、P2H5、PH3、GaN、AsF5、又はPF3の少なくとも一つを含む、請求項1に記載の方法。
- 該還元ガスが、SiH4、B2H6、NH3、又はH2の少なくとも一つを含む、請求項1に記載の方法。
- プラズマを生成させる該ステップが:
該処理チャンバ内に該ガス混合物とともに窒素含有ガスを供給する工程;
を更に含む、請求項1に記載の方法。 - 該窒素含有ガスが、NO、NO2、NH3、N2又はN2Oの少なくとも一つを含む、請求項4に記載の方法。
- プラズマを生成させる該ステップが:
該反応ガスを約5sccm〜約600sccmで供給する工程と;
該還元ガスを約0sccm〜約500sccmで供給する工程と;
を更に含む、請求項1に記載の方法。 - 該反応ガスが、BF3であり、該還元ガスが、SiH4ガスである、請求項1に記載の方法。
- 該反応ガスが、BF3とB2H6であり、該還元ガスが、SiH4ガスである、請求項1に記載の方法。
- 該反応ガスが、BF3であり、該還元ガスが、B2H6ガスである、請求項1に記載の方法。
- 該ガス混合物を供給する該ステップが:
該処理チャンバ内に該ガス混合物とともに不活性ガスを供給する工程であって、該不活性ガスが、Ar、He、Xe、Kr又はN2の少なくとも一つを含む、前記工程;
を更に含む、請求項1に記載の方法。 - イオンを注入する該ステップが:
RF源電力を印加する工程と;
RFバイアス電力を印加する工程と;
を更に含む、請求項1に記載の方法。 - RFを印加する該ステップが:
RF源電力を約50ワット〜2000ワットで印加する工程と;
RFバイアス電力を約50ワット〜11000ワットで印加する工程と;
を更に含む、請求項10に記載の方法。 - 該プラズマを生成させる該ステップが:
該還元ガスと該反応ガスから解離したイオンの一部とを反応させる工程;
を更に含む、請求項1に記載の方法。 - 該処理チャンバからポンプで排出する揮発性ガスを形成するステップ;
を更に含む、請求項13に記載の方法。 - 注入する該ステップが:
該基板表面から約10オングストローム〜約800オングストロームの深さで該基板内に該イオンを注入する工程;
を更に含む、請求項1に記載の方法。 - 該反応ガスと該還元ガスが、約1:0.01〜約1:0.5のガス流量比で供給される、請求項1に記載の方法。
- 該還元ガスが、水素含有ガスである、請求項1に記載の方法。
- プラズマ浸漬イオン注入プロセスによって基板内にイオンを注入する方法であって:
処理チャンバ内に基板を準備するステップと;
該チャンバ内に反応ガスと水素含有還元ガスを含むガス混合物を供給するステップと;
該ガス混合物からプラズマを形成するステップと;
該ガス混合物から該基板内にイオンを注入するステップと;
を含む、前記方法。 - 該反応ガスが、BF3、B2H6、BCl3、P2H5、PH3、GaN、AsF5、又はPF3の少なくとも一つを含む、請求項18に記載の方法。
- 該水素含有還元ガスが、SiH4又はB2H6ガスの少なくとも一つを含む、請求項18に記載の方法。
- ガス混合物を供給する該ステップが:
該チャンバ内に窒素含有ガスを供給する工程;
を更に含む、請求項18に記載の方法。 - 該窒素含有ガスが、NO、NO2、NH3、N2又はN2Oの少なくとも一つを含む、請求項21に記載の方法。
- プラズマ浸漬イオン注入プロセスによって基板内にイオンを注入する方法であって、
処理チャンバ内に基板を準備するステップと;
反応ガスとSiH4、B2H6、NH3、及びH2を含む群より選ばれる水素含有還元ガス含むガス混合物を該チャンバ内に供給するステップと;
RF電力を印加して、プラズマを形成させるステップと;
該ガス混合物をイオン種として解離させるステップであって、該還元ガスからの該イオン種がイオン種の第一部分と反応する工程と、該チャンバから副生成物をポンプで排出する工程とを含む、前記ステップと;
該ガス混合物からの該イオン種の第二部分を該基板内に注入するステップと;
を含む、前記方法。 - 該反応ガスが、BF3である、請求項23に記載の方法。
- 該イオンの該第二部分が、Bイオンである、請求項24に記載の方法。
- イオン種の該第一部分が、Fイオンである、請求項24に記載の方法。
- 該還元ガスからの該イオン種が、Hイオンである、請求項23に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/608,357 US7732309B2 (en) | 2006-12-08 | 2006-12-08 | Plasma immersed ion implantation process |
US11/608,357 | 2006-12-08 | ||
PCT/US2007/086848 WO2008073845A1 (en) | 2006-12-08 | 2007-12-07 | Plasma immersed ion implantation process |
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JP2010512649A true JP2010512649A (ja) | 2010-04-22 |
JP2010512649A5 JP2010512649A5 (ja) | 2010-12-02 |
JP5331703B2 JP5331703B2 (ja) | 2013-10-30 |
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JP2009540505A Expired - Fee Related JP5331703B2 (ja) | 2006-12-08 | 2007-12-07 | プラズマ浸漬イオン注入プロセス |
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US (3) | US7732309B2 (ja) |
JP (1) | JP5331703B2 (ja) |
KR (1) | KR101502431B1 (ja) |
CN (2) | CN102522324B (ja) |
TW (1) | TWI375260B (ja) |
WO (1) | WO2008073845A1 (ja) |
Cited By (3)
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JP2012507866A (ja) * | 2008-10-31 | 2012-03-29 | アプライド マテリアルズ インコーポレイテッド | P3iチャンバにおける共形ドープの改善 |
WO2013164940A1 (ja) * | 2012-05-01 | 2013-11-07 | 東京エレクトロン株式会社 | 被処理基体にドーパントを注入する方法、及びプラズマドーピング装置 |
JP2016529704A (ja) * | 2013-07-18 | 2016-09-23 | ヴァリアン セミコンダクター イクイップメント アソシエイツ インコーポレイテッド | 注入システムのイオンビーム品質を改善する方法 |
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SG2014011944A (en) | 2005-08-30 | 2014-08-28 | Advanced Tech Materials | Boron ion implantation using alternative fluorinated boron precursors, and formation of large boron hydrides for implantation |
US7732309B2 (en) | 2006-12-08 | 2010-06-08 | Applied Materials, Inc. | Plasma immersed ion implantation process |
WO2010120805A2 (en) | 2009-04-13 | 2010-10-21 | Applied Materials, Inc. | Modification of magnetic properties of films using ion and neutral beam implantation |
US8598022B2 (en) | 2009-10-27 | 2013-12-03 | Advanced Technology Materials, Inc. | Isotopically-enriched boron-containing compounds, and methods of making and using same |
US8062965B2 (en) * | 2009-10-27 | 2011-11-22 | Advanced Technology Materials, Inc. | Isotopically-enriched boron-containing compounds, and methods of making and using same |
JP5919195B2 (ja) * | 2009-10-27 | 2016-05-18 | インテグリス・インコーポレーテッド | イオン注入システムおよび方法 |
TWI466179B (zh) * | 2010-02-26 | 2014-12-21 | Advanced Tech Materials | 用以增進離子植入系統中之離子源的壽命及性能之方法與設備 |
KR101902022B1 (ko) | 2010-08-30 | 2018-09-27 | 엔테그리스, 아이엔씨. | 고체 물질로부터 화합물 또는 그의 중간체를 제조하기 위한 장치 및 방법, 및 이러한 화합물과 중간체를 사용하는 방법 |
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Also Published As
Publication number | Publication date |
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US20110053360A1 (en) | 2011-03-03 |
WO2008073845A1 (en) | 2008-06-19 |
KR101502431B1 (ko) | 2015-03-13 |
JP5331703B2 (ja) | 2013-10-30 |
CN101558183B (zh) | 2012-03-14 |
CN102522324B (zh) | 2015-09-02 |
TW200832523A (en) | 2008-08-01 |
US7838399B2 (en) | 2010-11-23 |
CN101558183A (zh) | 2009-10-14 |
US20080138967A1 (en) | 2008-06-12 |
US20080138968A1 (en) | 2008-06-12 |
TWI375260B (en) | 2012-10-21 |
CN102522324A (zh) | 2012-06-27 |
US8273624B2 (en) | 2012-09-25 |
KR20090085705A (ko) | 2009-08-07 |
US7732309B2 (en) | 2010-06-08 |
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