JP6141356B2 - 半導体デバイス上に共形酸化物層を形成するための方法 - Google Patents
半導体デバイス上に共形酸化物層を形成するための方法 Download PDFInfo
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- JP6141356B2 JP6141356B2 JP2015109727A JP2015109727A JP6141356B2 JP 6141356 B2 JP6141356 B2 JP 6141356B2 JP 2015109727 A JP2015109727 A JP 2015109727A JP 2015109727 A JP2015109727 A JP 2015109727A JP 6141356 B2 JP6141356 B2 JP 6141356B2
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Description
Claims (15)
- 半導体基板上の酸化物層を処理する方法であって、
イオン発生領域を有するプラズマ反応チャンバ内の基板支持部上に酸化すべき基板を置くこと、
前記プラズマ反応チャンバ中にプロセスガスを導入すること、及び
約−50℃〜100℃の範囲内の温度で前記基板を積極的に冷却しながら、水平表面厚さ及び側壁厚さを有する酸化物層を前記基板上に形成するために、同じプラズマ反応チャンバの前記イオン発生領域であって、前記基板の上2cmよりも大きい範囲にある前記イオン発生領域内にプラズマを発生させること
を含む方法。 - 前記基板温度を、前記酸化物層の形成中に約−25℃〜75℃の範囲内の温度に積極的に冷却する、請求項1に記載の方法。
- 前記基板温度を、前記酸化物層の形成中に約0℃〜50℃の範囲内の温度に積極的に冷却する、請求項1に記載の方法。
- 前記基板温度を積極的に冷却することが、前記基板支持部を通して冷却剤を流すことを含む、請求項1に記載の方法。
- 前記基板支持部が、複数の冷却流路を具備した表面を備え、前記基板温度を積極的に冷却することが、前記基板支持部の前記表面に前記基板を接触させることを含む、請求項4に記載の方法。
- 前記基板支持部が、前記冷却流路に冷却剤を供給する一連の通路をさらに備える、請求項5に記載の方法。
- 前記基板温度を積極的に冷却することが、前記プラズマ反応チャンバ中に対流ガスを流すことを含む、請求項4に記載の方法。
- 前記対流ガスがヘリウムを含む、請求項7に記載の方法。
- 前記対流ガスが約500sccm〜約3000sccmの範囲内の流量を含む、請求項7に記載の方法。
- 半導体基板上に酸化物層を形成する方法であって、
プラズマ反応装置の、イオン発生領域を有するチャンバ内の基板支持部上に、酸化すべき基板を置くこと、
チャンバ中にプロセスガスを導入すること、及び
約100℃未満の温度に前記基板を積極的に冷却しながら、前記基板上に酸化物層を形成するために、同じチャンバの前記イオン発生領域であって、前記基板の上2cmよりも大きい範囲にある前記イオン発生領域内でプラズマを発生させること
を含む方法。 - 前記プラズマが酸素種を含み、前記基板を積極的に冷却することにより、前記酸素種の付着係数を増加させる、請求項10に記載の方法。
- 前記基板を積極的に冷却することが、前記反応装置へ対流ガスを流すことを含む、請求項10に記載の方法。
- 前記基板を積極的に冷却することが、前記基板と前記基板支持部との間に冷却剤を循環させることを含む、請求項10に記載の方法。
- 前記冷却剤がヘリウムを含む、請求項13に記載の方法。
- 前記冷却剤が第2の希ガスをさらに含む、請求項14に記載の方法。
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JP2012216667A (ja) * | 2011-03-31 | 2012-11-08 | Tokyo Electron Ltd | プラズマ処理方法 |
US20140034632A1 (en) * | 2012-08-01 | 2014-02-06 | Heng Pan | Apparatus and method for selective oxidation at lower temperature using remote plasma source |
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US10535505B2 (en) * | 2016-11-11 | 2020-01-14 | Lam Research Corporation | Plasma light up suppression |
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