JP2010267813A - 発光素子及びその製造方法 - Google Patents
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- 238000000034 method Methods 0.000 title claims abstract description 33
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 15
- 239000002184 metal Substances 0.000 claims abstract description 86
- 229910052751 metal Inorganic materials 0.000 claims abstract description 86
- 239000000758 substrate Substances 0.000 claims abstract description 56
- 239000004065 semiconductor Substances 0.000 claims abstract description 7
- 239000013078 crystal Substances 0.000 claims description 14
- 238000005520 cutting process Methods 0.000 claims description 11
- 238000000926 separation method Methods 0.000 claims description 8
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 claims description 4
- 238000005304 joining Methods 0.000 claims description 4
- 230000005496 eutectics Effects 0.000 claims description 3
- 230000004048 modification Effects 0.000 description 9
- 238000012986 modification Methods 0.000 description 9
- 235000012431 wafers Nutrition 0.000 description 8
- 238000001020 plasma etching Methods 0.000 description 7
- 230000007547 defect Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 238000005452 bending Methods 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 230000000903 blocking effect Effects 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 239000004793 Polystyrene Substances 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 229920002223 polystyrene Polymers 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000005253 cladding Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229920001400 block copolymer Polymers 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
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Abstract
【解決手段】半導体からなる発光層を有する積層体と、前記積層体に付設された第1の接合金属層と、基板と、前記基板に付設され、前記第1の接合金属層と接合界面において接合された第2の接合金属層と、を備え、前記第1の接合金属層の前記接合界面側における平面サイズと、前記第2の接合金属層の前記接合界面側における平面サイズと、のうちいずれかは、前記基板の平面サイズよりも小さいことを特徴とする発光素子及びその製造方法が提供される。
【選択図】図1
Description
しかしながら、このようにして形成された厚い接合金属層をダイシングする切断工程の量産性が高いとは言えず、また歩留りにも改善が必要である。
図1は、第1の実施形態にかかる発光素子の模式断面図である。
半導体からなる発光層20を有する積層体25と、基板27と、が接合金属層を介して接合されている。すなわち、積層体25の一方の面25aに付設された第1の接合金属層26と、基板27に付設された第2の接合金属層28と、が接合界面32において接合されている。第2の接合金属層28は、導電性を有する基板27を介してp側電極29へ接続されている。
GaAsなどからなる結晶成長基板30上に、GaAsバッファ層(図示せず)、n型GaAsコンタクト層14(1×1018cm−3、厚さ0.1μm)、n型In0.5(Ga0.3Al0.7)0.5Pからなる電流拡散層16(4×1017cm−3、厚さ2μm)、n型InAlPからなるn型クラッド層18(4×1017cm−3、厚さ0.6μm)、発光層20、InAlPからなるp型クラッド層22(2×1017cm−3、厚さ0.6μm)、p型In0.5(Ga0.3Al0.7)0.5Pからなる層、In0.5(Ga0.7Al0.3)0.5P層、p型Ga0.5Al0.5Asからなるp型コンタクト層24(9×1018cm−3,厚さ0.4μm)、n型InAlPからなるストッパ層(図示せず)などを、この順序でMOCVD(Metal Organic Chemical Vapor Deposition:有機金属気相成長)法などを用いて結晶成長する(図2(a))。
図3(a)はダイシング法の場合のチップ外観歩留り、図3(b)はスクライブ法の場合のチップ外観歩留り、のグラフ図である。縦軸はチップの外観歩留り(%)、金属層厚さ(μm)である。なお、接合金属層の切断部近傍の折れ曲がり、接合金属層の積層体からのメクレ、及び積層体クラックなどが所定の大きさ以上となると、外観不良と判定される。基板27の裏面のp側電極29の厚さT1は0.36μm、第2の接合金属層28の厚さT2は0.42μm、とし固定とする。
図4(a)は第1の変形例、図4(b)は第2の変形例、及び図4(c)は第3の変形例、の模式断面図である。
これらの変形例では、発光層20を含む積層体25の平面サイズは基板27の平面サイズよりも小さい。すなわち、積層体25の外縁は基板27の外縁よりも内側に位置している。このために、発光層20の端部近傍におけるダイシングやスクライブなどによる破砕層を抑制容易であり、安定したダイオード特性を得ることができる。
本実施形態は、チップの上面の光取り出し面に微小凹凸18aを有する。微小凹凸18aはグレイデッドインデックス(GI)領域として作用し、光取り出し効率を高めることができる。
さらに、n側電極34は、パッド電極34aと細線電極34bとを有している。パッド電極34aの中央部の下方には、p型電流ブロック層12が設けられキャリアの注入が抑制されている。
結晶成長基板30と、n型コンタクト層14と、の間にはp型In0.5(Ga0.3Al0.7)0.5Pからなる電流ブロック層12(2×1017cm−3、厚さ0.2μm)が設けられている(図6(a))。第1の実施形態のように、積層体25の面25a上に設けられ、凹部26cを有する第1の接合金属層26と、基板27上に設けられた第2の接合金属層28と、が重ね合わされたのち加圧加熱により接合される(図6(b))。
Claims (5)
- 半導体からなる発光層を有する積層体と、
前記積層体に付設された第1の接合金属層と、
基板と、
前記基板に付設され、前記第1の接合金属層と接合界面において接合された第2の接合金属層と、
を備え、
前記第1の接合金属層の前記接合界面側における平面サイズと、前記第2の接合金属層の前記接合界面側における平面サイズと、のうちいずれかは、前記基板の平面サイズよりも小さいことを特徴とする発光素子。 - 前記発光層の平面サイズは、前記基板の前記平面サイズよりも小さいことを特徴とする請求項1記載の発光素子。
- 前記基板は、Si、SiC、GaAs、及びGaPのいずれかからなり、
前記第1の接合金属は、Au、Auを含む多層金属、及びAuを含む共晶金属、のいずれかを含み、
前記第2の接合金属は、Au、Auを含む多層金属、及びAuを含む共晶金属、のいずれかを含むことを特徴とする請求項1または2に記載の発光素子。 - 結晶成長基板の上に発光層を有する積層体を形成する工程と、
前記積層体の上に第1の接合金属層を形成する工程と、
基板の上に第2の接合金属層を形成する工程と、
前記第1の接合金属層の表面及び前記第2の接合金属層の表面のうちいずれかに凹部を形成したのち、前記第1の接合金属層と前記第2の接合金属層とを重ね合わせた状態で加熱して接合する工程と、
前記接合する工程ののち、前記結晶成長基板を除去する工程と、
前記凹部内を通りかつ前記基板に略垂直な面が切断面となるように、前記基板を切断する工程と、
を備えたことを特徴とする発光素子の製造方法。 - 前記結晶成長基板を除去する工程ののち、前記凹部と連続する離間領域を設けて前記積層体を互いに分離する工程をさらに備え、
前記切断する工程は、前記略垂直な面が前記積層体の前記離間領域をさらに通るように前記基板を切断する工程を含むことを特徴とする請求項4記載の発光素子の製造方法。
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US12/563,562 US8618562B2 (en) | 2009-05-14 | 2009-09-21 | Light emitting device and method for manufacturing same |
TW098141363A TWI404237B (zh) | 2009-05-14 | 2009-12-03 | 發光元件及其製造方法 |
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WO2016056171A1 (ja) * | 2014-10-06 | 2016-04-14 | 信越半導体株式会社 | 半導体発光素子 |
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KR101163838B1 (ko) * | 2009-10-19 | 2012-07-09 | 엘지이노텍 주식회사 | 반도체 발광소자 및 그 제조방법 |
US8754424B2 (en) | 2011-08-29 | 2014-06-17 | Micron Technology, Inc. | Discontinuous patterned bonds for semiconductor devices and associated systems and methods |
US10622342B2 (en) | 2017-11-08 | 2020-04-14 | Taiwan Semiconductor Manufacturing Company Ltd. | Stacked LED structure and associated manufacturing method |
WO2023242185A1 (en) * | 2022-06-14 | 2023-12-21 | Ams-Osram International Gmbh | Method for producing a semiconductor device and semiconductor device |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH0613715A (ja) * | 1992-06-26 | 1994-01-21 | Rohm Co Ltd | 端面発光素子およびその製法 |
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TW201103168A (en) | 2011-01-16 |
TWI404237B (zh) | 2013-08-01 |
US8618562B2 (en) | 2013-12-31 |
US20100289046A1 (en) | 2010-11-18 |
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