JP2009117428A - パワー半導体モジュールの製造方法、パワー半導体モジュールの製造装置、パワー半導体モジュール、及び接合方法 - Google Patents
パワー半導体モジュールの製造方法、パワー半導体モジュールの製造装置、パワー半導体モジュール、及び接合方法 Download PDFInfo
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Abstract
【解決手段】第1及び第2の絶縁基板と、第1及び第2の絶縁基板の対向する各面と直接又は他の素子を介して接合されたパワー半導体素子と、第1及び第2の絶縁基板を両側から挟み込むように接合時に流動性を有する接合材によりそれぞれ接合された第1及び第2の放熱体と、を含むパワー半導体モジュールを製造する際に、接合材に加えられる重みを弾性部材を用いて軽減させた状態で、第1の絶縁基板と第1の放熱体、及び第2の絶縁基板と第2の放熱体をそれぞれ接合する。
【選択図】図1
Description
Claims (15)
- 第1及び第2の絶縁基板と、前記第1及び第2の絶縁基板の対向する各面と直接又は他の素子を介して接合されたパワー半導体素子と、前記第1及び第2の絶縁基板を両側から挟み込むように接合時に流動性を有する接合材によりそれぞれ接合された第1及び第2の放熱体と、を含むパワー半導体モジュールの製造方法であって、
前記接合材に加えられる重量を弾性部材を用いて軽減させた状態で、前記第1の絶縁基板と前記第1の放熱体、及び前記第2の絶縁基板と前記第2の放熱体をそれぞれ接合する接合工程を含む、
ことを特徴とするパワー半導体モジュールの製造方法。 - 前記接合工程では、前記第1及び第2の放熱体との間に前記弾性部材を挿入した状態で、前記第1の絶縁基板と前記第1の放熱体、及び前記第2の絶縁基板と前記第2の放熱体をそれぞれ接合する、
ことを特徴とする請求項1に記載のパワー半導体モジュールの製造方法。 - 前記弾性部材は、自然長が前記第1及び第2の放熱体の間の距離よりも長いばねである、
ことを特徴とする請求項2に記載のパワー半導体モジュールの製造方法。 - 前記接合工程では、前記パワー半導体モジュールの上部に支持された前記弾性部材により前記第1又は第2の放熱体のうち上側の前記放熱体を吊り下げた状態で、前記第1の絶縁基板と前記第1の放熱体、及び前記第2の絶縁基板と前記第2の放熱体をそれぞれ接合する、
ことを特徴とする請求項1に記載のパワー半導体モジュールの製造方法。 - 前記第1及び第2の絶縁基板の間に弾性部材を挿入した状態で、前記パワー半導体素子と前記第1の絶縁基板、及び前記パワー半導体素子と前記第2の絶縁基板を接合時に流動性を有する接合材により接合する工程をさらに含む、
ことを特徴とする請求項1乃至4のいずれかに記載のパワー半導体モジュールの製造方法。 - 前記パワー半導体モジュールの上部に支持された弾性部材により前記第1及び第2の絶縁基板のうち上側の前記絶縁基板を吊り下げた状態で、前記パワー半導体素子と前記第1の絶縁基板、及び前記パワー半導体素子と前記第2の絶縁基板を接合時に流動性を有する接合材により接合する工程をさらに含む、
ことを特徴とする請求項1乃至4のいずれかに記載のパワー半導体モジュールの製造方法。 - 前記パワー半導体素子と前記第1の絶縁基板、及び前記パワー半導体素子と前記第2の絶縁基板の接合に用いられる接合材は、前記第1の絶縁基板と前記第1の放熱体、及び前記第2の絶縁基板と前記第2の放熱体の接合に用いられる接合材よりも溶融温度が高い、
ことを特徴とする請求項5又は6に記載のパワー半導体モジュールの製造方法。 - 前記パワー半導体モジュールは、前記パワー半導体素子の面であって、前記第1及び第2の絶縁基板と対向する各面と直接又は他の素子を介して接合時に流動性を有する接合材より接合された第1及び第2の電極板をさらに含み、
前記第1及び第2の電極板の間に弾性部材を挿入した状態で、前記パワー半導体素子と前記第1の電極板、及び前記パワー半導体素子と前記第1の電極板を前記第3の接合材により接合する工程をさらに含む、
ことを特徴とする請求項1乃至7のいずれかに記載のパワー半導体モジュールの製造方法。 - 前記パワー半導体素子と前記第1の電極板、及び前記パワー半導体素子と前記第1の電極板の接合に用いられる接合材は、前記第1の絶縁基板と前記第1の放熱体、及び前記第2の絶縁基板と前記第2の放熱体の接合に用いられる接合材よりも溶融温度が高い、
ことを特徴とする請求項8に記載のパワー半導体モジュールの製造方法。 - 前記接合材はハンダである、
ことを特徴とする請求項1乃至9のいずれかに記載のパワー半導体モジュールの製造方法。 - 前記第1及び第2の絶縁基板はそれぞれ、両面に金属箔が接合される、
ことを特徴とする請求項1乃至10のいずれかに記載のパワー半導体モジュールの製造方法。 - 第1及び第2の絶縁基板と、前記第1及び第2の絶縁基板の対向する各面と直接又は他の素子を介して接合されたパワー半導体素子と、前記第1及び第2の絶縁基板を両側から挟み込むように接合時に流動性を有する接合材によりそれぞれ接合された第1及び第2の放熱体と、を含むパワー半導体モジュールの製造装置であって、
前記第1の絶縁基板と前記第1の放熱体、及び前記第2の絶縁基板と前記第2の放熱体をそれぞれ接合する時に、前記接合材に加えられる重量を弾性部材を用いて軽減させる手段を含む、
ことを特徴とするパワー半導体モジュールの製造装置。 - 第1及び第2の絶縁基板と、
前記第1及び第2の絶縁基板の対向する各面と直接又は他の素子を介して接合されたパワー半導体素子と、
前記第1及び第2の絶縁基板を両側から挟み込むように接合時に流動性を有する接合材によりそれぞれ接合された第1及び第2の放熱体と、
前記第1及び第2の放熱体との間に設けられた、前記接合材に加えられる重量を軽減させる弾性部材と、を含む
ことを特徴とするパワー半導体モジュール。 - パワー半導体モジュールを構成する第1の部材と第2の部材とを、接合時に流動性を有する接合材により接合する接合方法であって、
前記第1の部材を前記第2の部材の上側に配置するとともに、前記第2の部材に掛かる前記第1の部材の重量を軽減させた状態で、前記接合材により前記第1及び第2の部材を接合することを特徴とする接合方法。 - 前記第1の部材を弾性部材により支持した状態で、前記接合材により前記第1及び第2の部材を接合することを特徴とする請求項14に記載の接合方法。
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