JP5565147B2 - 半導体モジュールの製造方法 - Google Patents
半導体モジュールの製造方法 Download PDFInfo
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- JP5565147B2 JP5565147B2 JP2010149662A JP2010149662A JP5565147B2 JP 5565147 B2 JP5565147 B2 JP 5565147B2 JP 2010149662 A JP2010149662 A JP 2010149662A JP 2010149662 A JP2010149662 A JP 2010149662A JP 5565147 B2 JP5565147 B2 JP 5565147B2
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Description
本発明の第1実施形態について説明する。本実施形態では、本発明の一実施形態にかかる半導体モジュールの適用例として、三相モータ駆動用のインバータを例に挙げて説明する。
本発明の第2実施形態について説明する。本実施形態の半導体モジュール10は、第1実施形態に対して銅ブロック12を無くしたものであり、その他に関しては第1実施形態と同様であるため、第1実施形態と異なる部分についてのみ説明する。
本発明の第3実施形態について説明する。本実施形態の半導体モジュール10は、第1実施形態に対して冷却プレート18の構成を変更したものであり、その他に関しては第1実施形態と同様であるため、第1実施形態と異なる部分についてのみ説明する。
本発明の第4実施形態について説明する。本実施形態の半導体モジュール10は、第1実施形態に対して冷却プレート18の構成およびその形成方法を変更したものであり、その他に関しては第1実施形態と同様であるため、第1実施形態と異なる部分についてのみ説明する。
上記第4実施形態では、第1実施形態に示す銅ブロック12がある構造において、冷却フィン18bを樹脂モールド後に接続する場合について説明したが、第2実施形態に示す銅ブロック12が無い構造において、冷却フィン18bを樹脂モールド後に接続するようにしても良い。
3 三相モータ
4 昇圧回路
5 インバータ出力回路
10 半導体モジュール
11 半導体チップ
12 銅ブロック
13、14 第1、第2電気配線
15 制御端子
16 溶射絶縁膜
17 溶射アルミ膜
18 冷却プレート
18a 冷却フィン
19 樹脂モールド部
41、51、53、55 上アーム
42、52、54、56 下アーム
Claims (5)
- 冷却プレート(18)を用意し、該冷却プレート(18)の表面側に絶縁材を介して半導体パワー素子が形成された半導体チップ(11)を搭載したのち、樹脂モールド部(19)にてモールドして一体構造とする半導体モジュールの製造方法において、
前記冷却プレート(18)の表面に前記絶縁材として溶射絶縁膜(16)を形成する絶縁膜形成工程と、
前記溶射絶縁膜(16)における前記冷却プレート(18)とは反対側の面に溶射導体膜(17)を形成する導体膜形成工程と、
前記溶射導体膜(17)および前記冷却プレート(18)を電極として、これら前記溶射導体膜(17)と前記冷却プレート(18)との間に電圧を印加することにより、前記溶射導体膜(17)と前記冷却プレート(18)との間の絶縁が行われていることの検査を行う絶縁検査工程と、
前記絶縁検査工程にて絶縁が行われているものを用いて、前記溶射導体膜(17)の上に前記半導体チップ(11)を搭載したのち、前記樹脂モールド部(19)にてモールドして一体構造とする樹脂モールド工程と、を含んでいることを特徴とする半導体モジュールの製造方法。 - 前記樹脂モールド工程では、前記溶射導体膜(17)の表面に金属ブロック(12)を介して前記半導体チップ(11)を配置することを特徴とする請求項1に記載の半導体モジュールの製造方法。
- 前記樹脂モールド工程では、前記溶射導体膜(17)の表面に直接前記半導体チップ(11)を配置することを特徴とする請求項1に記載の半導体モジュールの製造方法。
- 前記冷却プレート(18)として、板状のプレート部(18a)のみによって構成されたものを用いることを特徴とする請求項1ないし3のいずれか1つに記載の半導体モジュールの製造方法。
- 前記溶射絶縁膜形成工程、前記絶縁膜形成工程、前記絶縁検査工程および前記樹脂モールド工程では、前記冷却プレート(18)のうちの板状のプレート部(18a)のみを用いて行い、前記樹脂モールド工程の後に、前記冷却プレート(18)のプレート部(18a)に対して冷却フィン(18a)を接続する工程を有していることを特徴とする請求項1ないし3のいずれか1つに記載の半導体モジュールの製造方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
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JP2010149662A JP5565147B2 (ja) | 2010-06-30 | 2010-06-30 | 半導体モジュールの製造方法 |
US13/173,334 US8629004B2 (en) | 2010-06-30 | 2011-06-30 | Method of manufacturing semiconductor modules and semiconductor module |
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JP2010149662A JP5565147B2 (ja) | 2010-06-30 | 2010-06-30 | 半導体モジュールの製造方法 |
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JP2012015287A JP2012015287A (ja) | 2012-01-19 |
JP5565147B2 true JP5565147B2 (ja) | 2014-08-06 |
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JP2010149662A Active JP5565147B2 (ja) | 2010-06-30 | 2010-06-30 | 半導体モジュールの製造方法 |
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Families Citing this family (12)
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EP2835823B1 (en) * | 2012-04-02 | 2019-09-11 | Fuji Electric Co., Ltd. | Power converter |
DE102014214784A1 (de) * | 2014-07-28 | 2016-02-11 | Continental Automotive Gmbh | Schaltungsträger, elektronische Baugruppe, Verfahren zum Herstellen eines Schaltungsträgers |
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