JP2008270723A - 薄膜トランジスタ - Google Patents
薄膜トランジスタ Download PDFInfo
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- JP2008270723A JP2008270723A JP2008007887A JP2008007887A JP2008270723A JP 2008270723 A JP2008270723 A JP 2008270723A JP 2008007887 A JP2008007887 A JP 2008007887A JP 2008007887 A JP2008007887 A JP 2008007887A JP 2008270723 A JP2008270723 A JP 2008270723A
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- Prior art keywords
- gate insulating
- thin film
- insulating layer
- oxide
- film transistor
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- 239000010409 thin film Substances 0.000 title claims abstract description 68
- 239000000758 substrate Substances 0.000 claims abstract description 70
- 239000004065 semiconductor Substances 0.000 claims abstract description 31
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 16
- 229910052738 indium Inorganic materials 0.000 claims abstract description 14
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 13
- 239000010408 film Substances 0.000 claims description 37
- -1 hafnium aluminate Chemical class 0.000 claims description 12
- 239000004372 Polyvinyl alcohol Substances 0.000 claims description 9
- 229920002451 polyvinyl alcohol Polymers 0.000 claims description 9
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 8
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 8
- 239000004793 Polystyrene Substances 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 150000001875 compounds Chemical class 0.000 claims description 6
- 239000004642 Polyimide Substances 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 5
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 claims description 5
- 229920000058 polyacrylate Polymers 0.000 claims description 5
- 229920001721 polyimide Polymers 0.000 claims description 5
- 229920002223 polystyrene Polymers 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 5
- 239000004593 Epoxy Substances 0.000 claims description 4
- 229920001665 Poly-4-vinylphenol Polymers 0.000 claims description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052735 hafnium Inorganic materials 0.000 claims description 4
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 4
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 4
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 4
- 229920000728 polyester Polymers 0.000 claims description 4
- 229910001936 tantalum oxide Inorganic materials 0.000 claims description 4
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 142
- 239000000463 material Substances 0.000 description 21
- 238000004544 sputter deposition Methods 0.000 description 16
- 238000000034 method Methods 0.000 description 13
- 239000011701 zinc Substances 0.000 description 11
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 10
- 238000005229 chemical vapour deposition Methods 0.000 description 10
- 229920003023 plastic Polymers 0.000 description 9
- 239000004033 plastic Substances 0.000 description 9
- 238000009413 insulation Methods 0.000 description 8
- 238000001771 vacuum deposition Methods 0.000 description 8
- 239000013078 crystal Substances 0.000 description 6
- 238000000151 deposition Methods 0.000 description 6
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 238000004050 hot filament vapor deposition Methods 0.000 description 5
- 229910003437 indium oxide Inorganic materials 0.000 description 5
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 5
- 238000007733 ion plating Methods 0.000 description 5
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 5
- 230000005669 field effect Effects 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 238000001755 magnetron sputter deposition Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000011787 zinc oxide Substances 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000002349 favourable effect Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 238000000608 laser ablation Methods 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 3
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 3
- 239000011112 polyethylene naphthalate Substances 0.000 description 3
- 239000004926 polymethyl methacrylate Substances 0.000 description 3
- 229910052718 tin Inorganic materials 0.000 description 3
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 3
- 229910001887 tin oxide Inorganic materials 0.000 description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 2
- 239000004695 Polyether sulfone Substances 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- CXKCTMHTOKXKQT-UHFFFAOYSA-N cadmium oxide Inorganic materials [Cd]=O CXKCTMHTOKXKQT-UHFFFAOYSA-N 0.000 description 2
- CFEAAQFZALKQPA-UHFFFAOYSA-N cadmium(2+);oxygen(2-) Chemical compound [O-2].[Cd+2] CFEAAQFZALKQPA-UHFFFAOYSA-N 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 238000000313 electron-beam-induced deposition Methods 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 239000003365 glass fiber Substances 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000013081 microcrystal Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000002159 nanocrystal Substances 0.000 description 2
- 239000004417 polycarbonate Substances 0.000 description 2
- 229920000515 polycarbonate Polymers 0.000 description 2
- 229920006393 polyether sulfone Polymers 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 238000003980 solgel method Methods 0.000 description 2
- 239000011135 tin Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229920002284 Cellulose triacetate Polymers 0.000 description 1
- 229920000089 Cyclic olefin copolymer Polymers 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 229910004541 SiN Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NNLVGZFZQQXQNW-ADJNRHBOSA-N [(2r,3r,4s,5r,6s)-4,5-diacetyloxy-3-[(2s,3r,4s,5r,6r)-3,4,5-triacetyloxy-6-(acetyloxymethyl)oxan-2-yl]oxy-6-[(2r,3r,4s,5r,6s)-4,5,6-triacetyloxy-2-(acetyloxymethyl)oxan-3-yl]oxyoxan-2-yl]methyl acetate Chemical compound O([C@@H]1O[C@@H]([C@H]([C@H](OC(C)=O)[C@H]1OC(C)=O)O[C@H]1[C@@H]([C@@H](OC(C)=O)[C@H](OC(C)=O)[C@@H](COC(C)=O)O1)OC(C)=O)COC(=O)C)[C@@H]1[C@@H](COC(C)=O)O[C@@H](OC(C)=O)[C@H](OC(C)=O)[C@H]1OC(C)=O NNLVGZFZQQXQNW-ADJNRHBOSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- IEJHYFOJNUCIBD-UHFFFAOYSA-N cadmium(2+) indium(3+) oxygen(2-) Chemical compound [O-2].[Cd+2].[In+3] IEJHYFOJNUCIBD-UHFFFAOYSA-N 0.000 description 1
- BEQNOZDXPONEMR-UHFFFAOYSA-N cadmium;oxotin Chemical compound [Cd].[Sn]=O BEQNOZDXPONEMR-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 229920000840 ethylene tetrafluoroethylene copolymer Polymers 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000007644 letterpress printing Methods 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- KYKLWYKWCAYAJY-UHFFFAOYSA-N oxotin;zinc Chemical compound [Zn].[Sn]=O KYKLWYKWCAYAJY-UHFFFAOYSA-N 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920003208 poly(ethylene sulfide) Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 229920005672 polyolefin resin Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920002620 polyvinyl fluoride Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910001930 tungsten oxide Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78609—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device for preventing leakage current
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thin Film Transistor (AREA)
- Formation Of Insulating Films (AREA)
Abstract
【解決手段】絶縁基板上に少なくとも、ゲート電極、ゲート絶縁層、酸化物を含む半導体層が順次積層され、前記半導体層上にソース電極とドレイン電極が設けられた薄膜トランジスタであって、前記ゲート絶縁層が前記絶縁基板に接する下部層と前記下部層上に設けられた少なくとも一層以上の上部層からなり、且つ前記下部層はIn、Zn、Gaのいずれか1種の元素を含む酸化物であることを特徴とする。
【選択図】図1
Description
絶縁基板10としてPEN基材(帝人デュポン社製Q65 厚さ125μm)上に、DCマグネトロンスパッタ装置を用いてITOを100nm成膜し、フォトリソグラフィー法を用いてゲート電極11を形成した。次にRFマグネトロンスパッタ法を用いてIn―Ga―Zn―O系酸化物からなる絶縁基板10と接する下部ゲート絶縁層12a(膜厚100nm)、SiONからなる上部ゲート絶縁層12b(膜厚200nm)、In―Ga―Zn―O系酸化物からなる半導体層13(膜厚40nm)を連続成膜した。下部ゲート絶縁層12aの抵抗値は3.2×1014Ω・cmであった。表1にスパッタ法による成膜条件を示す。さらにEB(ElectronBeam)マスク蒸着によりAlソース電極14とドレイン電極15を膜厚150nmとして形成し、薄膜トランジスタ素子1を得た(図1)。ここでソース/ドレイン電極間のチャネル長は0.2mmであり、チャネル幅は2mmであった。また、膜厚は触針式膜厚計(ULVAC製 Dektak6M)で測定した。
図1において下部ゲート絶縁層12a(膜厚150nm)、上部ゲート絶縁層12b(膜厚150nm)の膜厚以外は実施例1と同様に作製し、薄膜トランジスタ素子2を得た。下部ゲート絶縁層12aの抵抗値は2.8×1014Ω・cmであった。
図1において下部ゲート絶縁層12a(膜厚200nm)、上部ゲート絶縁層12b(膜厚100nm)の膜厚以外は実施例1と同様に作製し、薄膜トランジスタ素子3を得た。下部ゲート絶縁層12aの抵抗値は3.2×1014Ω・cmであった。
図1において下部ゲート絶縁層12a(膜厚225nm)、上部ゲート絶縁層12b(膜厚75nm)の膜厚以外は実施例1と同様に作製し、薄膜トランジスタ素子4を得た。下部ゲート絶縁層12aの抵抗値は3.2×1014Ω・cmであった。
図1において下部ゲート絶縁層12a(膜厚240nm)、上部ゲート絶縁層12b(膜厚60nm)の膜厚以外は実施例1と同様に作製し、薄膜トランジスタ素子5を得た。下部ゲート絶縁層12aの抵抗値は4.0×1014Ω・cmであった。
図1において下部ゲート絶縁層12a(膜厚200nm)、上部ゲート絶縁層12b(膜厚100nm)の膜厚および上部ゲート絶縁層12bの成膜条件以外は実施例1と同様に作製し、薄膜トランジスタ素子6を得た。表2にスパッタ法による成膜条件を示す。下部ゲート絶縁層12aの抵抗値は2.2×1010Ω・cmであった。
図1において下部ゲート絶縁層12a(膜厚200nm)、上部ゲート絶縁層12b(膜厚100nm)の膜厚および上部ゲート絶縁層12bの成膜条件以外は実施例1と同様に作製し、薄膜トランジスタ素子7を得た。表3にスパッタ法による成膜条件を示す。
下部ゲート絶縁層12aの抵抗値は2.2×109Ω・cmであった。
図1においてゲート絶縁層12としてSiON(膜厚300nm)を単層で形成した以外は、実施例1と同様に作製し、薄膜トランジスタ素子8を得た(図3)。表4にスパッタ法による成膜条件を示す。ゲート絶縁層12の抵抗値は3.6×1014Ω・cmであった。
11 ゲート電極
12 ゲート絶縁層
12a 下部ゲート絶縁層
12b 上部ゲート絶縁層
13 半導体層
14 ソース電極
15 ドレイン電極
Claims (8)
- 絶縁基板上に少なくとも、ゲート電極、ゲート絶縁層、酸化物を含む半導体層が順次積層され、前記半導体層上にソース電極とドレイン電極が設けられた薄膜トランジスタであって、前記ゲート絶縁層が前記絶縁基板に接する下部層と前記下部層上に設けられた少なくとも一層以上の上部層からなり、且つ前記下部層はIn、Zn、Gaのいずれか1種の元素を含む酸化物であることを特徴とする薄膜トランジスタ。
- 絶縁基板上に少なくとも、ゲート電極、ゲート絶縁層が順次積層され、前記ゲート絶縁層上にソース電極とドレイン電極が設けられ、少なくとも前記ソース電極と前記ドレイン電極との間の前記ゲート絶縁層上に酸化物を含む半導体層が設けられた薄膜トランジスタであって、前記ゲート絶縁層が前記絶縁基板に接する下部層と前記下部層上に設けられた少なくとも一層以上の上部層からなり、且つ前記下部層はIn、Zn、Gaのいずれか1種の元素を含む酸化物であることを特徴とする薄膜トランジスタ。
- 前記上部層の少なくとも一層が、酸化シリコン、窒化シリコン、シリコンオキシナイトライド、酸化アルミニウム、酸化タンタル、酸化イットリウム、酸化ハフニウム、ハフニウムアルミネート、酸化ジルコニア、酸化チタンのいずれか1種の化合物を含むことを特徴とする請求項1または2に記載の薄膜トランジスタ。
- 前記上部層の少なくとも一層が、ポリアクリレート、ポリビニルアルコール、ポリスチレン、ポリイミド、ポリエステル、エポキシ、ポリビニルフェノール、ポリビニルアルコールのいずれか1種の化合物を含むことを特徴とする請求項1または2に記載の薄膜トランジスタ。
- 前記下部層の膜厚が、ゲート絶縁層全体の膜厚の2/3以下であることを特徴とする請求項1乃至4のいずれかに記載の薄膜トランジスタ。
- 前記下部層の膜厚が、2nm以上200nm以下であることを特徴とする請求項1乃至4のいずれかに記載の薄膜トランジスタ。
- 前記下部層の抵抗率が1010Ω・cm以上であることを特徴とする請求項1乃至6のいずれかに記載の薄膜トランジスタ。
- 前記絶縁基板が可撓性基板であることを特徴とする請求項1乃至7のいずれかに記載の薄膜トランジスタ。
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