JP2007081593A - 発振器、pll回路および受信機、送信機 - Google Patents
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- 239000004065 semiconductor Substances 0.000 claims description 13
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03L—AUTOMATIC CONTROL, STARTING, SYNCHRONISATION OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
- H03L7/00—Automatic control of frequency or phase; Synchronisation
- H03L7/06—Automatic control of frequency or phase; Synchronisation using a reference signal applied to a frequency- or phase-locked loop
- H03L7/16—Indirect frequency synthesis, i.e. generating a desired one of a number of predetermined frequencies using a frequency- or phase-locked loop
- H03L7/18—Indirect frequency synthesis, i.e. generating a desired one of a number of predetermined frequencies using a frequency- or phase-locked loop using a frequency divider or counter in the loop
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1206—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification
- H03B5/1212—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification the amplifier comprising a pair of transistors, wherein an output terminal of each being connected to an input terminal of the other, e.g. a cross coupled pair
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1228—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the amplifier comprising one or more field effect transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1237—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator
- H03B5/124—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1237—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator
- H03B5/1262—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising switched elements
- H03B5/1265—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising switched elements switched capacitors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/20—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising resistance and either capacitance or inductance, e.g. phase-shift oscillator
- H03B5/24—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising resistance and either capacitance or inductance, e.g. phase-shift oscillator active element in amplifier being semiconductor device
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03L—AUTOMATIC CONTROL, STARTING, SYNCHRONISATION OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
- H03L7/00—Automatic control of frequency or phase; Synchronisation
- H03L7/06—Automatic control of frequency or phase; Synchronisation using a reference signal applied to a frequency- or phase-locked loop
- H03L7/08—Details of the phase-locked loop
- H03L7/099—Details of the phase-locked loop concerning mainly the controlled oscillator of the loop
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/06—Receivers
- H04B1/16—Circuits
- H04B1/26—Circuits for superheterodyne receivers
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/06—Receivers
- H04B1/16—Circuits
- H04B1/26—Circuits for superheterodyne receivers
- H04B1/28—Circuits for superheterodyne receivers the receiver comprising at least one semiconductor device having three or more electrodes
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B2200/00—Indexing scheme relating to details of oscillators covered by H03B
- H03B2200/003—Circuit elements of oscillators
- H03B2200/005—Circuit elements of oscillators including measures to switch a capacitor
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B2201/00—Aspects of oscillators relating to varying the frequency of the oscillations
- H03B2201/02—Varying the frequency of the oscillations by electronic means
- H03B2201/025—Varying the frequency of the oscillations by electronic means the means being an electronic switch for switching in or out oscillator elements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03J—TUNING RESONANT CIRCUITS; SELECTING RESONANT CIRCUITS
- H03J2200/00—Indexing scheme relating to tuning resonant circuits and selecting resonant circuits
- H03J2200/10—Tuning of a resonator by means of digitally controlled capacitor bank
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- Engineering & Computer Science (AREA)
- Computer Networks & Wireless Communication (AREA)
- Signal Processing (AREA)
- Power Engineering (AREA)
- Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
- Stabilization Of Oscillater, Synchronisation, Frequency Synthesizers (AREA)
- Superheterodyne Receivers (AREA)
- Transmitters (AREA)
Abstract
【解決手段】 可変容量回路230、230Aの静電容量を可変することによって電圧制御型発振器21の発振周波数が変更される。可変容量回路230は、制御信号によって静電容量が連続的に変更可能な複数の可変容量素子60〜64と、可変容量素子のそれぞれに対応しており静電容量が固定の複数のコンデンサ50〜54と、可変容量素子とこれに対応するコンデンサとからなる組合せ回路を一組として複数の可変容量素子60〜64と複数のコンデンサ50〜54のそれぞれの選択的な接続の有無を組合せ回路を単位として切り替える複数のスイッチ71〜74、81〜84とを備えている。
【選択図】 図2
Description
14 低雑音増幅器(LNA)
16 ミキサ
20 局部発振器(LO)
21 電圧制御型発振器(VCO)
26 中間周波フィルタ(IFフィルタ)
28 中間周波増幅器(IFA)
32 信号処理部
36 スピーカ
40 制御部
42 操作部
44 表示部
50〜54 コンデンサ
60〜64 可変容量素子
71〜74、81〜84 スイッチ
220 インダクタ
230、230A 可変容量回路
Claims (13)
- 可変容量回路の静電容量を可変することによって発振周波数が変更可能な発振器であって、
前記可変容量回路は、
制御信号によって静電容量が連続的に変更可能な複数の可変容量素子と、
前記可変容量素子のそれぞれに対応しており、静電容量が固定の複数のコンデンサと、
前記可変容量素子とこれに対応する前記コンデンサとからなる組合せ回路を一組として、前記複数の可変容量素子と前記複数のコンデンサのそれぞれの選択的な接続の有無を、前記組合せ回路を単位として切り替える複数のスイッチと、
を備えることを特徴とする発振器。 - 請求項1において、
前記組合せ回路は、少なくとも一組が前記スイッチを介さずに常時接続されていることを特徴とする発振器。 - 請求項1または2において、
前記複数のスイッチの断続状態を切り替えることにより発振周波数の粗調整を行い、前記制御信号によって前記可変容量素子の静電容量を変更することにより発振周波数の微調整を行うことを特徴とする発振器。 - 請求項1または2において、
前記複数のスイッチの断続状態を切り替えることにより、互いに一部がオーバーラップした複数の発振周波数帯域のいずれかが選択され、
前記制御信号によって前記可変容量素子の静電容量を変更することにより、選択された発振周波数帯域内における発振周波数の調整が行われることを特徴とする発振器。 - 請求項1〜4のいずれかにおいて、
前記複数のスイッチのそれぞれは、前記組合せ回路を構成する前記可変容量素子と前記コンデンサのそれぞれについて個別に設けられており、1つの組の前記組合せ回路に対応する複数の前記スイッチの断続状態を同時に切り替えることを特徴とする発振器。 - 請求項1〜4のいずれかにおいて、
前記複数のスイッチのそれぞれは、前記組合せ回路毎に設けられていることを特徴とする発振器。 - 請求項1〜6のいずれかにおいて、
前記可変容量回路とともに共振回路を構成するインダクタと、前記共振回路に接続される増幅素子とを備えることを特徴とする発振器。 - 請求項7において、
CMOSプロセスあるいはMOSプロセスを用いて、前記インダクタを含む全ての構成部品を半導体基板上に一体形成することを特徴とする発振器。 - 請求項7において、
CMOSプロセスあるいはMOSプロセスを用いて、前記インダクタ以外の全ての構成部品を半導体基板上に一体形成することを特徴とする発振器。 - 請求項1〜9のいずれかに記載の発振器を位相同期ループ内に含むことを特徴とするPLL回路。
- 請求項10において、
前記発振器と、
前記発振器の出力信号を外部から設定可能な分周比nで分周して出力する可変分周器と、
前記可変分周器の出力信号と所定の基準周波数信号との位相比較を行う位相比較器と、
前記位相比較器の出力を平滑して前記制御信号としての制御電圧を生成するローパスフィルタと、
を備えることを特徴とするPLL回路。 - 請求項11に記載のPLL回路と、
前記PLL回路から出力される発振信号と、アンテナを介して受信した受信信号とを混合するミキサと、
前記ミキサの出力信号に含まれる所定周波数成分を抽出するフィルタと、
前記フィルタを通した後の信号に対して所定の復調処理を行う復調回路と、
前記PLL回路に含まれる前記可変分周器の分周比nを設定することにより、受信周波数の設定、変更を行う制御部と、
を備えることを特徴とする受信機。 - 請求項11に記載のPLL回路と、
前記PLL回路から出力される発振信号を搬送波として送信信号を生成してアンテナから送信する送信回路と、
前記PLL回路に含まれる前記可変分周器の分周比nを設定することにより、送信周波数の設定、変更を行う制御部と、
を備えることを特徴とする送信機。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005264631A JP2007081593A (ja) | 2005-09-13 | 2005-09-13 | 発振器、pll回路および受信機、送信機 |
GB0805210A GB2443784A (en) | 2005-09-13 | 2006-06-27 | Oscillator, pll circuit, receiver and transmitter |
CN200680033593.5A CN101263651A (zh) | 2005-09-13 | 2006-06-27 | 振荡器、pll电路和接收机、发送机 |
US12/065,603 US20090128240A1 (en) | 2005-09-13 | 2006-06-27 | Oscillator, pll circuit, receiver and transmitter |
PCT/JP2006/312765 WO2007032137A1 (ja) | 2005-09-13 | 2006-06-27 | 発振器、pll回路および受信機、送信機 |
Applications Claiming Priority (1)
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JP2005264631A JP2007081593A (ja) | 2005-09-13 | 2005-09-13 | 発振器、pll回路および受信機、送信機 |
Publications (1)
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JP2007081593A true JP2007081593A (ja) | 2007-03-29 |
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JP2005264631A Pending JP2007081593A (ja) | 2005-09-13 | 2005-09-13 | 発振器、pll回路および受信機、送信機 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20090128240A1 (ja) |
JP (1) | JP2007081593A (ja) |
CN (1) | CN101263651A (ja) |
GB (1) | GB2443784A (ja) |
WO (1) | WO2007032137A1 (ja) |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
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KR100872278B1 (ko) | 2007-08-31 | 2008-12-05 | 삼성전기주식회사 | 전압 제어 발진기 |
JP2009010599A (ja) * | 2007-06-27 | 2009-01-15 | Panasonic Corp | デジタル制御発振回路、周波数シンセサイザ、それを用いた無線通信機器及びその制御方法 |
JP2010541321A (ja) * | 2007-09-21 | 2010-12-24 | クゥアルコム・インコーポレイテッド | 調整可能位相を有する信号生成器 |
JP2012505599A (ja) * | 2008-10-09 | 2012-03-01 | アルテラ コーポレイション | 発振回路内で構成要素を接続するオプションコンダクタを提供する技術 |
US8385474B2 (en) | 2007-09-21 | 2013-02-26 | Qualcomm Incorporated | Signal generator with adjustable frequency |
US8446976B2 (en) | 2007-09-21 | 2013-05-21 | Qualcomm Incorporated | Signal generator with adjustable phase |
JP2013541869A (ja) * | 2010-08-22 | 2013-11-14 | クローネ メステヒニーク ゲゼルシヤフト ミツト ベシユレンクテル ハフツング | 広帯域の周波数ランプを形成する高周波出力信号を発生させるための回路装置 |
US8963611B2 (en) | 2009-06-19 | 2015-02-24 | Qualcomm Incorporated | Power and impedance measurement circuits for a wireless communication device |
US9000847B2 (en) | 2009-08-19 | 2015-04-07 | Qualcomm Incorporated | Digital tunable inter-stage matching circuit |
US9143172B2 (en) | 2009-06-03 | 2015-09-22 | Qualcomm Incorporated | Tunable matching circuits for power amplifiers |
US9559639B2 (en) | 2009-08-19 | 2017-01-31 | Qualcomm Incorporated | Protection circuit for power amplifier |
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EP2169828B1 (en) * | 2008-09-25 | 2017-03-22 | ams AG | Variable capacitance circuit and method for providing a variable capacitance |
JP4927156B2 (ja) * | 2009-11-25 | 2012-05-09 | シャープ株式会社 | テレビ放送受信装置、テレビ放送受信装置の制御方法、制御プログラムおよびこれを記録した記録媒体 |
JP5558929B2 (ja) * | 2010-06-04 | 2014-07-23 | 株式会社ユーシン | タッチセンサ |
US9225060B2 (en) * | 2011-07-18 | 2015-12-29 | The Johns Hopkins University | System and method for impedance matching in antennas |
JP6295572B2 (ja) * | 2013-09-30 | 2018-03-20 | セイコーエプソン株式会社 | 回路装置、発振器、電子機器及び移動体 |
CN104579196B (zh) * | 2015-01-28 | 2018-06-05 | 中国科学院微电子研究所 | 一种射频信号放大器 |
US9755575B1 (en) * | 2016-03-02 | 2017-09-05 | Qualcomm Incorporated | Variable frequency RC oscillator |
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-
2005
- 2005-09-13 JP JP2005264631A patent/JP2007081593A/ja active Pending
-
2006
- 2006-06-27 WO PCT/JP2006/312765 patent/WO2007032137A1/ja active Application Filing
- 2006-06-27 US US12/065,603 patent/US20090128240A1/en not_active Abandoned
- 2006-06-27 GB GB0805210A patent/GB2443784A/en not_active Withdrawn
- 2006-06-27 CN CN200680033593.5A patent/CN101263651A/zh active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH0515519U (ja) * | 1991-07-31 | 1993-02-26 | 株式会社ケンウツド | 電圧制御発振回路 |
JPH09252220A (ja) * | 1996-03-15 | 1997-09-22 | Murata Mfg Co Ltd | 電圧制御発振器 |
JP2001320235A (ja) * | 2000-05-09 | 2001-11-16 | Matsushita Electric Ind Co Ltd | 電圧制御発振器 |
JP2004015387A (ja) * | 2002-06-06 | 2004-01-15 | Matsushita Electric Ind Co Ltd | 電圧制御型発振器及び周波数シンセサイザ |
Cited By (13)
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US8963611B2 (en) | 2009-06-19 | 2015-02-24 | Qualcomm Incorporated | Power and impedance measurement circuits for a wireless communication device |
US9000847B2 (en) | 2009-08-19 | 2015-04-07 | Qualcomm Incorporated | Digital tunable inter-stage matching circuit |
US9559639B2 (en) | 2009-08-19 | 2017-01-31 | Qualcomm Incorporated | Protection circuit for power amplifier |
JP2013541869A (ja) * | 2010-08-22 | 2013-11-14 | クローネ メステヒニーク ゲゼルシヤフト ミツト ベシユレンクテル ハフツング | 広帯域の周波数ランプを形成する高周波出力信号を発生させるための回路装置 |
Also Published As
Publication number | Publication date |
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CN101263651A (zh) | 2008-09-10 |
GB2443784A (en) | 2008-05-14 |
GB0805210D0 (en) | 2008-04-30 |
WO2007032137A1 (ja) | 2007-03-22 |
US20090128240A1 (en) | 2009-05-21 |
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