IT1234517B - Dispositivo a semiconduttore bipolare di potenza e procedimento per la sua fabbricazione - Google Patents
Dispositivo a semiconduttore bipolare di potenza e procedimento per la sua fabbricazioneInfo
- Publication number
- IT1234517B IT1234517B IT8806611A IT661188A IT1234517B IT 1234517 B IT1234517 B IT 1234517B IT 8806611 A IT8806611 A IT 8806611A IT 661188 A IT661188 A IT 661188A IT 1234517 B IT1234517 B IT 1234517B
- Authority
- IT
- Italy
- Prior art keywords
- procedure
- manufacture
- semiconductor device
- power semiconductor
- bipolar power
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66272—Silicon vertical transistors
- H01L29/66295—Silicon vertical transistors with main current going through the whole silicon substrate, e.g. power bipolar transistor
- H01L29/66303—Silicon vertical transistors with main current going through the whole silicon substrate, e.g. power bipolar transistor with multi-emitter, e.g. interdigitated, multi-cellular or distributed emitter
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0804—Emitter regions of bipolar transistors
- H01L29/0813—Non-interconnected multi-emitter structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41708—Emitter or collector electrodes for bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42304—Base electrodes for bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
- Thyristors (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IT8806611A IT1234517B (it) | 1988-05-05 | 1988-05-05 | Dispositivo a semiconduttore bipolare di potenza e procedimento per la sua fabbricazione |
| US07/344,568 US5032887A (en) | 1988-05-05 | 1989-04-28 | Bipolar power semiconductor device and process for its manufacture |
| DE68917197T DE68917197T2 (de) | 1988-05-05 | 1989-05-03 | Bipolarer Leistungshalbleiteranordnung und Verfahren zur ihrer Herstellung. |
| JP1113519A JPH0216740A (ja) | 1988-05-05 | 1989-05-03 | パイポーラパワー半導体デバイス及びその製造方法 |
| EP89830186A EP0341221B1 (en) | 1988-05-05 | 1989-05-03 | Bipolar power semiconductor device and process for its manufacture |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IT8806611A IT1234517B (it) | 1988-05-05 | 1988-05-05 | Dispositivo a semiconduttore bipolare di potenza e procedimento per la sua fabbricazione |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| IT8806611A0 IT8806611A0 (it) | 1988-05-05 |
| IT1234517B true IT1234517B (it) | 1992-05-19 |
Family
ID=11121393
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT8806611A IT1234517B (it) | 1988-05-05 | 1988-05-05 | Dispositivo a semiconduttore bipolare di potenza e procedimento per la sua fabbricazione |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US5032887A (it) |
| EP (1) | EP0341221B1 (it) |
| JP (1) | JPH0216740A (it) |
| DE (1) | DE68917197T2 (it) |
| IT (1) | IT1234517B (it) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0490514A (ja) * | 1990-08-02 | 1992-03-24 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
| FR2687843A1 (fr) * | 1992-02-24 | 1993-08-27 | Motorola Semiconducteurs | Transistor bipolaire lateral pnp et procede de fabrication. |
| EP0666600B1 (en) * | 1994-02-02 | 1999-09-15 | ROHM Co., Ltd. | Power bipolar transistor |
| SE516226C2 (sv) * | 1995-04-10 | 2001-12-03 | Forskarpatent I Linkoeping Ab | Bipolära transistorer med extra bas-kollektor- och bas- emitterstrukturer |
| GB0318146D0 (en) | 2003-08-02 | 2003-09-03 | Zetex Plc | Bipolar transistor with a low saturation voltage |
| US7598521B2 (en) * | 2004-03-29 | 2009-10-06 | Sanyo Electric Co., Ltd. | Semiconductor device in which the emitter resistance is reduced |
| WO2011077181A1 (en) * | 2009-12-21 | 2011-06-30 | Nxp B.V. | Semiconductor device with multilayer contact and method of manufacturing the same |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3381183A (en) * | 1965-06-21 | 1968-04-30 | Rca Corp | High power multi-emitter transistor |
| US4008484A (en) * | 1968-04-04 | 1977-02-15 | Fujitsu Ltd. | Semiconductor device having multilayered electrode structure |
| US3843425A (en) * | 1971-04-05 | 1974-10-22 | Rca Corp | Overlay transistor employing highly conductive semiconductor grid and method for making |
| US4291319A (en) * | 1976-05-19 | 1981-09-22 | National Semiconductor Corporation | Open base bipolar transistor protective device |
| JPS5397379A (en) * | 1977-02-07 | 1978-08-25 | Fujitsu Ltd | Transistor |
| US4581626A (en) * | 1977-10-25 | 1986-04-08 | General Electric Company | Thyristor cathode and transistor emitter structures with insulator islands |
| US4417265A (en) * | 1981-03-26 | 1983-11-22 | National Semiconductor Corporation | Lateral PNP power transistor |
| JPS57160160A (en) * | 1981-03-27 | 1982-10-02 | Nippon Denso Co Ltd | Semiconductor device |
| JPS5943830B2 (ja) * | 1981-10-23 | 1984-10-24 | 株式会社東芝 | 圧接型半導体装置 |
| FR2545654B1 (fr) * | 1983-05-03 | 1985-09-13 | Fairchild Camera Instr Co | Composant semi-conducteur de puissance, et procede pour la fabrication |
| JPS601846A (ja) * | 1983-06-18 | 1985-01-08 | Toshiba Corp | 多層配線構造の半導体装置とその製造方法 |
| JPS60132366A (ja) * | 1983-12-21 | 1985-07-15 | Toshiba Corp | 半導体装置 |
| DE3573357D1 (en) * | 1984-12-27 | 1989-11-02 | Siemens Ag | Semiconductor power switch |
| US4656496A (en) * | 1985-02-04 | 1987-04-07 | National Semiconductor Corporation | Power transistor emitter ballasting |
| JPS6236305U (it) * | 1985-08-20 | 1987-03-04 |
-
1988
- 1988-05-05 IT IT8806611A patent/IT1234517B/it active
-
1989
- 1989-04-28 US US07/344,568 patent/US5032887A/en not_active Expired - Lifetime
- 1989-05-03 DE DE68917197T patent/DE68917197T2/de not_active Expired - Fee Related
- 1989-05-03 EP EP89830186A patent/EP0341221B1/en not_active Expired - Lifetime
- 1989-05-03 JP JP1113519A patent/JPH0216740A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| EP0341221B1 (en) | 1994-08-03 |
| DE68917197T2 (de) | 1995-03-16 |
| EP0341221A2 (en) | 1989-11-08 |
| DE68917197D1 (de) | 1994-09-08 |
| US5032887A (en) | 1991-07-16 |
| IT8806611A0 (it) | 1988-05-05 |
| EP0341221A3 (en) | 1990-08-22 |
| JPH0216740A (ja) | 1990-01-19 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| TA | Fee payment date (situation as of event date), data collected since 19931001 |
Effective date: 19970530 |