KR890015422A - 반도체 장치 - Google Patents
반도체 장치Info
- Publication number
- KR890015422A KR890015422A KR1019890004252A KR890004252A KR890015422A KR 890015422 A KR890015422 A KR 890015422A KR 1019890004252 A KR1019890004252 A KR 1019890004252A KR 890004252 A KR890004252 A KR 890004252A KR 890015422 A KR890015422 A KR 890015422A
- Authority
- KR
- South Korea
- Prior art keywords
- semiconductor device
- semiconductor
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/405—Resistive arrangements, e.g. resistive or semi-insulating field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/408—Electrodes ; Multistep manufacturing processes therefor with an insulating layer with a particular dielectric or electrostatic property, e.g. with static charges or for controlling trapped charges or moving ions, or with a plate acting on the insulator potential or the insulator charges, e.g. for controlling charges effect or potential distribution in the insulating layer, or with a semi-insulating layer contacting directly the semiconductor surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/47—Schottky barrier electrodes
- H01L29/475—Schottky barrier electrodes on AIII-BV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/8611—Planar PN junction diodes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/14—Schottky barrier contacts
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63-80173 | 1988-03-31 | ||
JP63080173A JPH0817229B2 (ja) | 1988-03-31 | 1988-03-31 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR890015422A true KR890015422A (ko) | 1989-10-30 |
KR920006429B1 KR920006429B1 (ko) | 1992-08-06 |
Family
ID=13710947
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019890004252A KR920006429B1 (ko) | 1988-03-31 | 1989-03-31 | 반도체 장치 |
Country Status (3)
Country | Link |
---|---|
US (2) | US4980749A (ko) |
JP (1) | JPH0817229B2 (ko) |
KR (1) | KR920006429B1 (ko) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0618276B2 (ja) * | 1988-11-11 | 1994-03-09 | サンケン電気株式会社 | 半導体装置 |
US5594237A (en) * | 1995-02-24 | 1997-01-14 | The Whitaker Corporation | PIN detector having improved linear response |
JP2741745B2 (ja) * | 1995-03-24 | 1998-04-22 | 工業技術院長 | 半導体電極形成方法および装置 |
JP3681236B2 (ja) * | 1996-10-28 | 2005-08-10 | 沖電気工業株式会社 | 半導体装置 |
JP3180776B2 (ja) * | 1998-09-22 | 2001-06-25 | 日本電気株式会社 | 電界効果型トランジスタ |
US6750156B2 (en) | 2001-10-24 | 2004-06-15 | Applied Materials, Inc. | Method and apparatus for forming an anti-reflective coating on a substrate |
US8901699B2 (en) | 2005-05-11 | 2014-12-02 | Cree, Inc. | Silicon carbide junction barrier Schottky diodes with suppressed minority carrier injection |
US7662698B2 (en) * | 2006-11-07 | 2010-02-16 | Raytheon Company | Transistor having field plate |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3923975A (en) * | 1973-10-09 | 1975-12-02 | Cutler Hammer Inc | Tantalum-gallium arsenide schottky barrier semiconductor device |
JPS52129380A (en) * | 1976-04-23 | 1977-10-29 | Hitachi Ltd | Semiconductor device |
US4307132A (en) * | 1977-12-27 | 1981-12-22 | International Business Machines Corp. | Method for fabricating a contact on a semiconductor substrate by depositing an aluminum oxide diffusion barrier layer |
US4149307A (en) * | 1977-12-28 | 1979-04-17 | Hughes Aircraft Company | Process for fabricating insulated-gate field-effect transistors with self-aligned contacts |
JPS54118781A (en) * | 1978-03-08 | 1979-09-14 | Mitsubishi Electric Corp | Planar-type diode |
JPS55128875A (en) * | 1979-03-27 | 1980-10-06 | Nec Corp | Semiconductor device |
JPS59171157A (ja) * | 1983-03-18 | 1984-09-27 | Hitachi Ltd | 半導体装置 |
GB2176339A (en) * | 1985-06-10 | 1986-12-17 | Philips Electronic Associated | Semiconductor device with schottky junctions |
US4799100A (en) * | 1987-02-17 | 1989-01-17 | Siliconix Incorporated | Method and apparatus for increasing breakdown of a planar junction |
-
1988
- 1988-03-31 JP JP63080173A patent/JPH0817229B2/ja not_active Expired - Fee Related
-
1989
- 1989-03-07 US US07/319,951 patent/US4980749A/en not_active Expired - Lifetime
- 1989-03-31 KR KR1019890004252A patent/KR920006429B1/ko not_active IP Right Cessation
-
1990
- 1990-06-26 US US07/544,202 patent/US5006483A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US5006483A (en) | 1991-04-09 |
US4980749A (en) | 1990-12-25 |
KR920006429B1 (ko) | 1992-08-06 |
JPH0817229B2 (ja) | 1996-02-21 |
JPH01253270A (ja) | 1989-10-09 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
G160 | Decision to publish patent application | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20030711 Year of fee payment: 12 |
|
LAPS | Lapse due to unpaid annual fee |