KR910007151A - 대전력 반도체장치 - Google Patents

대전력 반도체장치

Info

Publication number: KR910007151A
Authority: KR; South Korea
Prior art keywords: semiconductor device; high power; power semiconductor; semiconductor; power
Prior art date: 1989-09-11

Application number

KR1019900014271A

Other languages

English (en)

Other versions

KR940008343B1 (ko

Inventor

마코토 히데시마

Original Assignee

가부시키가이샤 도시바

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1989-09-11

Filing date

1990-09-10

Publication date

1991-04-30

1990-09-10 Application filed by 가부시키가이샤 도시바 filed Critical 가부시키가이샤 도시바

1991-04-30 Publication of KR910007151A publication Critical patent/KR910007151A/ko

1994-09-12 Application granted granted Critical

1994-09-12 Publication of KR940008343B1 publication Critical patent/KR940008343B1/ko

Links

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/10—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers
- H01L25/11—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group H01L29/00
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]

Landscapes

Engineering & Computer Science (AREA)
Power Engineering (AREA)
Microelectronics & Electronic Packaging (AREA)
Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Computer Hardware Design (AREA)
Inverter Devices (AREA)

KR1019900014271A 1989-09-11 1990-09-10 대전력 반도체장치 KR940008343B1 (ko)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
JP23524089A JPH0671063B2 (ja)	1989-09-11	1989-09-11	大電力半導体装置
JP1-235240		1989-09-11

Publications (2)

Publication Number	Publication Date
KR910007151A true KR910007151A (ko)	1991-04-30
KR940008343B1 KR940008343B1 (ko)	1994-09-12

Family

ID=16983156

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
KR1019900014271A KR940008343B1 (ko)	1989-09-11	1990-09-10	대전력 반도체장치

Country Status (4)

Country	Link
EP (1)	EP0417747B1 (ko)
JP (1)	JPH0671063B2 (ko)
KR (1)	KR940008343B1 (ko)
DE (1)	DE69017322T2 (ko)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
DE4240501A1 (de) *	1992-12-02	1994-06-09	Export Contor Ausenhandelsgese	Leistungshalbleiter-Schaltungsanordnung
ES2078171B1 (es) *	1993-12-28	1998-01-16	Smartpack Tecnologia S A	Procedimiento de fabricacion de modulos de potencia con elementos semiconductores.
EP0669653A1 (de) *	1994-02-21	1995-08-30	ABB Management AG	Leistungshalbleitermodul sowie Schaltungsanordnung mit mindestens zwei Leistungshalbleitermoduln
DE10326321A1 (de)	2003-06-11	2005-01-13	Compact Dynamics Gmbh	Elektronische Baugruppe zum Schalten elektrischer Leistung
JP2010010698A (ja) *	2009-08-25	2010-01-14	Mitsubishi Electric Corp	半導体装置
KR101443987B1 (ko) *	2012-12-31	2014-09-23	삼성전기주식회사	반도체 모듈 패키지
JP6109630B2 (ja) *	2013-04-16	2017-04-05	株式会社日立製作所	半導体素子及び電力変換装置の配線構造
JP6094392B2 (ja) *	2013-06-11	2017-03-15	株式会社デンソー	半導体装置
JP6320433B2 (ja) *	2014-02-11	2018-05-09	三菱電機株式会社	電力用半導体モジュール
JP6331543B2 (ja) *	2014-03-24	2018-05-30	日産自動車株式会社	ハーフブリッジパワー半導体モジュール及びその製造方法
JP6269417B2 (ja) *	2014-09-26	2018-01-31	三菱電機株式会社	半導体装置
JP7215265B2 (ja) *	2019-03-19	2023-01-31	富士電機株式会社	半導体ユニット、半導体モジュール及び半導体装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
DE2718967A1 (de) *	1976-03-17	1978-11-09	Siemens Ag	Stromrichterbaueinheit
DE3241508A1 (de) *	1982-11-10	1984-05-10	Brown, Boveri & Cie Ag, 6800 Mannheim	Leistungstransistor-modul
JPS6081660U (ja) *	1983-11-10	1985-06-06	富士電機株式会社	ダ−リントントランジスタ
JPH0436230Y2 (ko) *	1985-12-19	1992-08-26
US4907068A (en) *	1987-01-21	1990-03-06	Siemens Aktiengesellschaft	Semiconductor arrangement having at least one semiconductor body
DE3717489A1 (de) *	1987-05-23	1988-12-01	Asea Brown Boveri	Leistungshalbleitermodul und verfahren zur herstellung des moduls
JPH073851B2 (ja) *	1988-01-28	1995-01-18	富士電機株式会社	パワートランジスタの並列接続方法

1989
- 1989-09-11 JP JP23524089A patent/JPH0671063B2/ja not_active Expired - Lifetime
1990
- 1990-09-10 KR KR1019900014271A patent/KR940008343B1/ko not_active IP Right Cessation
- 1990-09-11 DE DE69017322T patent/DE69017322T2/de not_active Expired - Fee Related
- 1990-09-11 EP EP19900117523 patent/EP0417747B1/en not_active Expired - Lifetime

Also Published As

Publication number	Publication date
EP0417747A2 (en)	1991-03-20
DE69017322D1 (de)	1995-04-06
EP0417747A3 (en)	1991-08-21
DE69017322T2 (de)	1995-08-03
JPH0671063B2 (ja)	1994-09-07
KR940008343B1 (ko)	1994-09-12
JPH0397257A (ja)	1991-04-23
EP0417747B1 (en)	1995-03-01

Legal Events

Date	Code	Title	Description
1990-09-10	A201	Request for examination
1994-01-10	E902	Notification of reason for refusal
1994-08-18	G160	Decision to publish patent application
1994-11-30	E701	Decision to grant or registration of patent right
1995-02-09	GRNT	Written decision to grant
2009-08-27	FPAY	Annual fee payment	Payment date: 20090827 Year of fee payment: 16
2010-09-11	EXPY	Expiration of term

Publication	Publication Date	Title
KR900011017A (ko)	1990-07-11	반도체장치
DE68926256D1 (de)	1996-05-23	Komplementäre Halbleiteranordnung
DE69032496D1 (de)	1998-08-27	Leistungshalbleiteranordnung
KR900007100A (ko)	1990-05-09	반도체장치
DE68928312D1 (de)	1997-10-16	Leistungshalbleitervorrichtung
KR900008703A (ko)	1990-06-03	반도체 장치
DE69031790D1 (de)	1998-01-22	Ein-Chip-Halbleitervorrichtung
DE68928176D1 (de)	1997-08-21	Leistungshalbleitervorrichtung
DE69026972D1 (de)	1996-06-20	Halbleiterlaservorrichtung
DE69024680D1 (de)	1996-02-22	Halbleiter-Speichereinrichtung
KR900001037A (ko)	1990-01-30	반도체 장치
DE69131235D1 (de)	1999-06-17	Halbleitende Hochleistungsverstärkervorrichtung
KR910007151A (ko)	1991-04-30	대전력 반도체장치
DE69030930D1 (de)	1997-07-24	Halbleiterlaservorrichtung
DE69032303D1 (de)	1998-06-18	Halbleiter-Speichereinrichtung
DE69033794D1 (de)	2001-10-18	Halbleiteranordnung
DE69321966D1 (de)	1998-12-10	Leistungs-Halbleiterbauelement
DE69031609D1 (de)	1997-11-27	Halbleiteranordnung
DE69030710D1 (de)	1997-06-19	Kryogene Leistungshalbleitervorrichtung
DE69026487D1 (de)	1996-05-15	Kartenartige Halbleiteranordnung
DE68928760D1 (de)	1998-09-03	Halbleitervorrichtung
KR900702572A (ko)	1990-12-07	반도체 장치
DE69029226D1 (de)	1997-01-09	Halbleiteranordnung
KR890015422A (ko)	1989-10-30	반도체 장치
KR890015471A (ko)	1989-10-30	반도체 장치