DE69030710D1 - Kryogene Leistungshalbleitervorrichtung - Google Patents
Kryogene LeistungshalbleitervorrichtungInfo
- Publication number
- DE69030710D1 DE69030710D1 DE69030710T DE69030710T DE69030710D1 DE 69030710 D1 DE69030710 D1 DE 69030710D1 DE 69030710 T DE69030710 T DE 69030710T DE 69030710 T DE69030710 T DE 69030710T DE 69030710 D1 DE69030710 D1 DE 69030710D1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor device
- power semiconductor
- cryogenic power
- cryogenic
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/44—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements the complete device being wholly immersed in a fluid other than air
- H01L23/445—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements the complete device being wholly immersed in a fluid other than air the fluid being a liquefied gas, e.g. in a cryogenic vessel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/429,532 US5126830A (en) | 1989-10-31 | 1989-10-31 | Cryogenic semiconductor power devices |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69030710D1 true DE69030710D1 (de) | 1997-06-19 |
DE69030710T2 DE69030710T2 (de) | 1997-12-11 |
Family
ID=23703655
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69030710T Expired - Fee Related DE69030710T2 (de) | 1989-10-31 | 1990-10-25 | Kryogene Leistungshalbleitervorrichtung |
Country Status (6)
Country | Link |
---|---|
US (1) | US5126830A (de) |
EP (1) | EP0426371B1 (de) |
JP (1) | JPH0671056B2 (de) |
CA (1) | CA2021606A1 (de) |
DE (1) | DE69030710T2 (de) |
IL (1) | IL96051A (de) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5323293A (en) * | 1992-12-18 | 1994-06-21 | International Business Machines Corporation | Arrangement for placing central processors and memory in a cryo cooled chamber |
DE4320803C2 (de) * | 1993-06-23 | 2001-06-28 | Inst Luft & Kaeltetechnik Ggmbh | Lageunabhängiges Sensor-Kühlsystem |
DE4332156A1 (de) * | 1993-09-22 | 1995-03-30 | Inst Luft Kaeltetech Gem Gmbh | Einrichtung zur autarken Kühlung hochtemperatursupraleitender Bauteile, vorzugsweise Sensoren |
US5625548A (en) * | 1994-08-10 | 1997-04-29 | American Superconductor Corporation | Control circuit for cryogenically-cooled power electronics employed in power conversion systems |
US6172550B1 (en) * | 1996-08-16 | 2001-01-09 | American Superconducting Corporation | Cryogenically-cooled switching circuit |
US6163064A (en) * | 1996-08-16 | 2000-12-19 | American Superconductor Corporation | Apparatus for improved operation of MOSFET devices in cryogenic environments |
US6798083B2 (en) * | 2000-03-15 | 2004-09-28 | Otward M. Mueller | Cryogenic power conversion for fuel cell systems especially for vehicles |
JP3813098B2 (ja) * | 2002-02-14 | 2006-08-23 | 三菱電機株式会社 | 電力用半導体モジュール |
US11917794B2 (en) * | 2020-10-30 | 2024-02-27 | Advanced Micro Devices, Inc. | Separating temperature domains in cooled systems |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL191525C (nl) * | 1977-02-02 | 1995-08-21 | Shinkokai Zaidan Hojin Handot | Halfgeleiderinrichting omvattende een stroomkanaalgebied van een eerste geleidingstype dat wordt omsloten door een van een stuurelektrode voorzien stuurgebied van het tweede geleidingstype. |
JPS53127272A (en) * | 1977-04-13 | 1978-11-07 | Semiconductor Res Found | Electrostatic induction transistor |
US4472727A (en) * | 1983-08-12 | 1984-09-18 | At&T Bell Laboratories | Carrier freezeout field-effect device |
JPS62216255A (ja) * | 1986-03-17 | 1987-09-22 | Fujitsu Ltd | 浸漬沸騰冷却モジユ−ル |
JPH0797615B2 (ja) * | 1986-08-20 | 1995-10-18 | 株式会社東芝 | 超低温冷却用容器 |
US4734820A (en) * | 1987-04-16 | 1988-03-29 | Ncr Corporation | Cryogenic packaging scheme |
JPS63289974A (ja) * | 1987-05-22 | 1988-11-28 | Hitachi Ltd | 低温保冷装置 |
DE3883873T2 (de) * | 1987-06-30 | 1994-01-05 | Sumitomo Electric Industries | Trägerelement für Halbleiterapparat. |
JPS6439047A (en) * | 1987-08-05 | 1989-02-09 | Agency Ind Science Techn | Semiconductor device |
JP2681288B2 (ja) * | 1988-11-02 | 1997-11-26 | 富士通株式会社 | 超伝導素子用パッケージ |
-
1989
- 1989-10-31 US US07/429,532 patent/US5126830A/en not_active Expired - Fee Related
-
1990
- 1990-07-19 CA CA002021606A patent/CA2021606A1/en not_active Abandoned
- 1990-10-17 IL IL96051A patent/IL96051A/xx not_active IP Right Cessation
- 1990-10-24 JP JP2284538A patent/JPH0671056B2/ja not_active Expired - Lifetime
- 1990-10-25 EP EP90311693A patent/EP0426371B1/de not_active Expired - Lifetime
- 1990-10-25 DE DE69030710T patent/DE69030710T2/de not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US5126830A (en) | 1992-06-30 |
JPH0671056B2 (ja) | 1994-09-07 |
IL96051A0 (en) | 1991-07-18 |
JPH03184364A (ja) | 1991-08-12 |
CA2021606A1 (en) | 1991-05-01 |
DE69030710T2 (de) | 1997-12-11 |
EP0426371A1 (de) | 1991-05-08 |
EP0426371B1 (de) | 1997-05-14 |
IL96051A (en) | 1993-08-18 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |