HK1176462A1 - Isolated transistors and diodes and isolation and termination structures for semiconductor die - Google Patents
Isolated transistors and diodes and isolation and termination structures for semiconductor dieInfo
- Publication number
- HK1176462A1 HK1176462A1 HK13103771.4A HK13103771A HK1176462A1 HK 1176462 A1 HK1176462 A1 HK 1176462A1 HK 13103771 A HK13103771 A HK 13103771A HK 1176462 A1 HK1176462 A1 HK 1176462A1
- Authority
- HK
- Hong Kong
- Prior art keywords
- diodes
- isolation
- semiconductor die
- termination structures
- isolated transistors
- Prior art date
Links
- 238000002955 isolation Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
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- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/8613—Mesa PN junction diodes
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/866—Zener diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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US12/072,615 US7667268B2 (en) | 2002-08-14 | 2008-02-27 | Isolated transistor |
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EP (1) | EP2248162A4 (fr) |
JP (1) | JP5449203B2 (fr) |
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CN (2) | CN102037562B (fr) |
HK (1) | HK1176462A1 (fr) |
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Families Citing this family (104)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7834421B2 (en) * | 2002-08-14 | 2010-11-16 | Advanced Analogic Technologies, Inc. | Isolated diode |
US7956391B2 (en) | 2002-08-14 | 2011-06-07 | Advanced Analogic Technologies, Inc. | Isolated junction field-effect transistor |
US7812403B2 (en) * | 2002-08-14 | 2010-10-12 | Advanced Analogic Technologies, Inc. | Isolation structures for integrated circuit devices |
US8513087B2 (en) * | 2002-08-14 | 2013-08-20 | Advanced Analogic Technologies, Incorporated | Processes for forming isolation structures for integrated circuit devices |
US8089129B2 (en) * | 2002-08-14 | 2012-01-03 | Advanced Analogic Technologies, Inc. | Isolated CMOS transistors |
US7902630B2 (en) * | 2002-08-14 | 2011-03-08 | Advanced Analogic Technologies, Inc. | Isolated bipolar transistor |
US7825488B2 (en) | 2006-05-31 | 2010-11-02 | Advanced Analogic Technologies, Inc. | Isolation structures for integrated circuits and modular methods of forming the same |
US7667268B2 (en) * | 2002-08-14 | 2010-02-23 | Advanced Analogic Technologies, Inc. | Isolated transistor |
US20080197408A1 (en) * | 2002-08-14 | 2008-08-21 | Advanced Analogic Technologies, Inc. | Isolated quasi-vertical DMOS transistor |
US7939420B2 (en) * | 2002-08-14 | 2011-05-10 | Advanced Analogic Technologies, Inc. | Processes for forming isolation structures for integrated circuit devices |
KR100867977B1 (ko) | 2006-10-11 | 2008-11-10 | 한국과학기술원 | 인도시아닌 그린 혈중 농도 역학을 이용한 조직 관류 분석장치 및 그를 이용한 조직 관류 분석방법 |
US8030731B2 (en) * | 2007-03-28 | 2011-10-04 | Advanced Analogic Technologies, Inc. | Isolated rectifier diode |
US7737526B2 (en) * | 2007-03-28 | 2010-06-15 | Advanced Analogic Technologies, Inc. | Isolated trench MOSFET in epi-less semiconductor sustrate |
KR101035596B1 (ko) * | 2007-12-28 | 2011-05-19 | 매그나칩 반도체 유한회사 | 딥 트렌치 구조를 갖는 반도체 소자 |
US8298889B2 (en) | 2008-12-10 | 2012-10-30 | Semiconductor Components Industries, Llc | Process of forming an electronic device including a trench and a conductive structure therein |
JP5537814B2 (ja) * | 2009-01-06 | 2014-07-02 | ラピスセミコンダクタ株式会社 | 半導体装置、及びその製造方法 |
US7943445B2 (en) | 2009-02-19 | 2011-05-17 | International Business Machines Corporation | Asymmetric junction field effect transistor |
CN101521203B (zh) * | 2009-04-07 | 2010-08-04 | 电子科技大学 | 一种半导体横向器件和高压器件 |
TWI405332B (zh) | 2010-03-10 | 2013-08-11 | Macronix Int Co Ltd | 接面場效應電晶體元件 |
US9293577B2 (en) * | 2010-03-30 | 2016-03-22 | Volterra Semiconductor LLC | LDMOS with no reverse recovery |
CN102270580A (zh) * | 2010-06-04 | 2011-12-07 | 和舰科技(苏州)有限公司 | 一种制造高压nmos管的方法 |
JP5834200B2 (ja) * | 2010-06-07 | 2015-12-16 | パナソニックIpマネジメント株式会社 | 半導体装置 |
US8462477B2 (en) * | 2010-09-13 | 2013-06-11 | Analog Devices, Inc. | Junction field effect transistor for voltage protection |
JP5581977B2 (ja) * | 2010-11-03 | 2014-09-03 | 株式会社デンソー | 半導体装置の製造方法 |
US8629026B2 (en) | 2010-11-12 | 2014-01-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Source tip optimization for high voltage transistor devices |
JP5504187B2 (ja) * | 2011-01-26 | 2014-05-28 | 株式会社東芝 | 半導体装置及びその製造方法 |
US8618583B2 (en) * | 2011-05-16 | 2013-12-31 | International Business Machines Corporation | Junction gate field effect transistor structure having n-channel |
JP5743831B2 (ja) * | 2011-09-29 | 2015-07-01 | 株式会社東芝 | 半導体装置 |
US8518764B2 (en) * | 2011-10-24 | 2013-08-27 | Freescale Semiconductor, Inc. | Semiconductor structure having a through substrate via (TSV) and method for forming |
JP5739826B2 (ja) * | 2012-01-23 | 2015-06-24 | 株式会社東芝 | 半導体装置 |
JP5964091B2 (ja) * | 2012-03-12 | 2016-08-03 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
JP6001309B2 (ja) * | 2012-04-17 | 2016-10-05 | エスアイアイ・セミコンダクタ株式会社 | 半導体装置 |
US9236472B2 (en) | 2012-04-17 | 2016-01-12 | Freescale Semiconductor, Inc. | Semiconductor device with integrated breakdown protection |
US8853780B2 (en) * | 2012-05-07 | 2014-10-07 | Freescale Semiconductor, Inc. | Semiconductor device with drain-end drift diminution |
WO2013176950A1 (fr) * | 2012-05-25 | 2013-11-28 | Microsemi Soc Corp. | Transistors mos durcis tid et procédé de fabrication |
US9093517B2 (en) | 2012-05-25 | 2015-07-28 | Microsemi SoC Corporation | TID hardened and single event transient single event latchup resistant MOS transistors and fabrication process |
US9231083B2 (en) * | 2012-06-29 | 2016-01-05 | Freescal Semiconductor Inc. | High breakdown voltage LDMOS device |
US8921934B2 (en) | 2012-07-11 | 2014-12-30 | Taiwan Semiconductor Manufacturing Company, Ltd. | FinFET with trench field plate |
JP6132539B2 (ja) * | 2012-12-13 | 2017-05-24 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
US9378958B2 (en) | 2012-12-28 | 2016-06-28 | United Microelectronics Corporation | Electrostatic discharge protection structure and fabricating method thereof |
US8890250B2 (en) * | 2012-12-28 | 2014-11-18 | United Microelectronics Corporation | Electrostatic discharge protection structure |
CN103050541B (zh) * | 2013-01-06 | 2015-08-19 | 上海华虹宏力半导体制造有限公司 | 一种射频ldmos器件及其制造方法 |
US9490322B2 (en) | 2013-01-23 | 2016-11-08 | Freescale Semiconductor, Inc. | Semiconductor device with enhanced 3D resurf |
JP2014170831A (ja) | 2013-03-04 | 2014-09-18 | Seiko Epson Corp | 回路装置及び電子機器 |
JP2014203851A (ja) * | 2013-04-01 | 2014-10-27 | 株式会社東芝 | 半導体装置及びその製造方法 |
CN104241354B (zh) * | 2013-06-09 | 2018-03-06 | 中芯国际集成电路制造(上海)有限公司 | Ldmos晶体管及其形成方法 |
CN105409006B (zh) * | 2013-07-16 | 2019-02-19 | 松下知识产权经营株式会社 | 半导体装置 |
US9076863B2 (en) * | 2013-07-17 | 2015-07-07 | Texas Instruments Incorporated | Semiconductor structure with a doped region between two deep trench isolation structures |
US9059278B2 (en) * | 2013-08-06 | 2015-06-16 | International Business Machines Corporation | High voltage lateral double-diffused metal oxide semiconductor field effect transistor (LDMOSFET) having a deep fully depleted drain drift region |
CN104425344B (zh) * | 2013-08-28 | 2017-06-13 | 中芯国际集成电路制造(上海)有限公司 | 半导体结构及其形成方法 |
US9006825B1 (en) * | 2013-09-27 | 2015-04-14 | Mediatek Inc. | MOS device with isolated drain and method for fabricating the same |
US9177952B2 (en) * | 2013-10-15 | 2015-11-03 | Freescale Semiconductor, Inc. | ESD protection with asymmetrical bipolar-based device |
CN104638003B (zh) * | 2013-11-14 | 2019-04-09 | 上海华虹宏力半导体制造有限公司 | 射频ldmos器件及工艺方法 |
WO2015077361A1 (fr) | 2013-11-21 | 2015-05-28 | Microsemi SoC Corporation | Dispositif à haute tension fabriqué en utilisant des procédés à basse tension |
CN104701365B (zh) * | 2013-12-05 | 2018-02-16 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件及其形成方法 |
US9543379B2 (en) | 2014-03-18 | 2017-01-10 | Nxp Usa, Inc. | Semiconductor device with peripheral breakdown protection |
JP2016001671A (ja) * | 2014-06-12 | 2016-01-07 | サンケン電気株式会社 | 半導体装置 |
TWI578537B (zh) * | 2014-08-01 | 2017-04-11 | 旺宏電子股份有限公司 | 高壓半導體元件 |
US9425304B2 (en) | 2014-08-21 | 2016-08-23 | Vishay-Siliconix | Transistor structure with improved unclamped inductive switching immunity |
JP6355481B2 (ja) * | 2014-08-25 | 2018-07-11 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
US10121889B2 (en) | 2014-08-29 | 2018-11-06 | Macronix International Co., Ltd. | High voltage semiconductor device |
KR102143520B1 (ko) * | 2014-09-17 | 2020-08-11 | 삼성전자 주식회사 | 펌핑 캐패시터 |
CN105720098B (zh) * | 2014-12-02 | 2019-01-29 | 中芯国际集成电路制造(上海)有限公司 | Nldmos及其制作方法 |
CN105810583B (zh) * | 2014-12-30 | 2019-03-15 | 无锡华润上华科技有限公司 | 横向绝缘栅双极型晶体管的制造方法 |
KR102354463B1 (ko) | 2015-01-09 | 2022-01-24 | 삼성전자주식회사 | 레트로그레이드 채널을 갖는 반도체 소자 및 그 제조방법 |
US9806148B2 (en) * | 2015-04-07 | 2017-10-31 | Texas Instruments Incorporated | Device isolator with reduced parasitic capacitance |
CN106298768B (zh) * | 2015-06-10 | 2019-03-19 | 联华电子股份有限公司 | 半导体元件及半导体元件的操作方法 |
KR101692625B1 (ko) * | 2015-06-18 | 2017-01-03 | 주식회사 동부하이텍 | 고비저항 기판 상에 형성된 반도체 소자 및 무선 주파수 모듈 |
KR101666753B1 (ko) * | 2015-06-18 | 2016-10-14 | 주식회사 동부하이텍 | 고비저항 기판 상에 형성된 반도체 소자 및 무선 주파수 모듈 |
JP2017045884A (ja) * | 2015-08-27 | 2017-03-02 | ルネサスエレクトロニクス株式会社 | 半導体装置および半導体装置の製造方法 |
US10217860B2 (en) * | 2015-09-11 | 2019-02-26 | Nxp Usa, Inc. | Partially biased isolation in semiconductor devices |
US9722097B2 (en) | 2015-09-16 | 2017-08-01 | Vanguard International Semiconductor Corporation | Semiconductor device and method for manufacturing the same |
US10446695B2 (en) * | 2015-10-21 | 2019-10-15 | United Silicone Carbide, Inc. | Planar multi-implanted JFET |
TWI594334B (zh) * | 2015-11-12 | 2017-08-01 | 世界先進積體電路股份有限公司 | 半導體裝置及其製造方法 |
CN107026082B (zh) * | 2016-02-02 | 2019-11-19 | 璟茂科技股份有限公司 | 功率整流二极管的制法 |
JP6591312B2 (ja) * | 2016-02-25 | 2019-10-16 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
US9871135B2 (en) | 2016-06-02 | 2018-01-16 | Nxp Usa, Inc. | Semiconductor device and method of making |
TWI693713B (zh) * | 2016-07-22 | 2020-05-11 | 立積電子股份有限公司 | 半導體結構 |
CN107785366B (zh) * | 2016-08-31 | 2020-04-14 | 无锡华润上华科技有限公司 | 集成有结型场效应晶体管的器件及其制造方法 |
US10032766B2 (en) * | 2016-09-16 | 2018-07-24 | Globalfoundries Singapore Pte. Ltd. | VDMOS transistors, BCD devices including VDMOS transistors, and methods for fabricating integrated circuits with such devices |
US10347621B2 (en) * | 2016-10-12 | 2019-07-09 | Texas Instruments Incorporated | Electrostatic discharge guard ring with snapback protection |
US9905687B1 (en) | 2017-02-17 | 2018-02-27 | Nxp Usa, Inc. | Semiconductor device and method of making |
JP6416969B2 (ja) * | 2017-04-13 | 2018-10-31 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
CN107359208A (zh) * | 2017-04-24 | 2017-11-17 | 杭州立昂微电子股份有限公司 | 一种肖特基势垒二极管及其制造方法 |
US10043826B1 (en) * | 2017-07-26 | 2018-08-07 | Qualcomm Incorporated | Fully depleted silicon on insulator integration |
CN108039361A (zh) * | 2017-12-08 | 2018-05-15 | 深圳市晶特智造科技有限公司 | 半导体功率器件、半导体功率器件的终端结构及其制作方法 |
TWI667788B (zh) * | 2018-03-23 | 2019-08-01 | 世界先進積體電路股份有限公司 | 半導體結構及其製造方法 |
CN110350018B (zh) * | 2018-04-02 | 2023-05-26 | 世界先进积体电路股份有限公司 | 半导体结构及其制造方法 |
US10607880B2 (en) * | 2018-08-30 | 2020-03-31 | Nxp Usa, Inc. | Die with buried doped isolation region |
US11069804B2 (en) * | 2018-08-31 | 2021-07-20 | Alpha And Omega Semiconductor (Cayman) Ltd. | Integration of HVLDMOS with shared isolation region |
JP6937281B2 (ja) * | 2018-09-14 | 2021-09-22 | 株式会社東芝 | 半導体装置 |
CN109616518B (zh) * | 2018-12-13 | 2022-08-23 | 中国科学院微电子研究所 | 一种mos栅控晶闸管 |
JP7195167B2 (ja) * | 2019-02-08 | 2022-12-23 | ルネサスエレクトロニクス株式会社 | 半導体装置及び半導体装置の製造方法 |
TWI732182B (zh) * | 2019-02-23 | 2021-07-01 | 世界先進積體電路股份有限公司 | 半導體裝置及其形成方法 |
CN110024134B (zh) | 2019-02-28 | 2020-06-26 | 长江存储科技有限责任公司 | 具有增大的击穿电压的高电压半导体器件及其制造方法 |
US10892320B2 (en) | 2019-04-30 | 2021-01-12 | Vanguard International Semiconductor Corporation | Semiconductor devices having stacked trench gate electrodes overlapping a well region |
JP7227110B2 (ja) * | 2019-09-18 | 2023-02-21 | 株式会社東芝 | 半導体装置 |
US11552190B2 (en) * | 2019-12-12 | 2023-01-10 | Analog Devices International Unlimited Company | High voltage double-diffused metal oxide semiconductor transistor with isolated parasitic bipolar junction transistor region |
US11049957B1 (en) * | 2020-04-16 | 2021-06-29 | Monolithic Power Systems, Inc. | LDMOS device with sinker link |
TWI730814B (zh) * | 2020-06-16 | 2021-06-11 | 力晶積成電子製造股份有限公司 | 絕緣閘雙極電晶體結構及其製造方法 |
TWI773254B (zh) * | 2021-04-19 | 2022-08-01 | 立錡科技股份有限公司 | 高壓元件及其製造方法 |
CN114744049B (zh) * | 2022-06-13 | 2022-09-27 | 瑞能半导体科技股份有限公司 | 碳化硅mosfet半导体器件及制作方法 |
CN115188832B (zh) * | 2022-07-11 | 2023-04-14 | 东莞市金誉半导体有限公司 | 一种高压jfet器件及其制备方法 |
CN114975601A (zh) * | 2022-07-28 | 2022-08-30 | 合肥晶合集成电路股份有限公司 | 一种半导体器件及其制作方法 |
Family Cites Families (116)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4269636A (en) * | 1978-12-29 | 1981-05-26 | Harris Corporation | Method of fabricating self-aligned bipolar transistor process and device utilizing etching and self-aligned masking |
JPS5824018B2 (ja) * | 1979-12-21 | 1983-05-18 | 富士通株式会社 | バイポ−ラicの製造方法 |
FR2498812A1 (fr) * | 1981-01-27 | 1982-07-30 | Thomson Csf | Structure de transistors dans un circuit integre et son procede de fabrication |
US4454647A (en) | 1981-08-27 | 1984-06-19 | International Business Machines Corporation | Isolation for high density integrated circuits |
JPS58100441A (ja) | 1981-12-10 | 1983-06-15 | Toshiba Corp | 半導体装置の製造方法 |
US4655875A (en) * | 1985-03-04 | 1987-04-07 | Hitachi, Ltd. | Ion implantation process |
US6740958B2 (en) | 1985-09-25 | 2004-05-25 | Renesas Technology Corp. | Semiconductor memory device |
US4819052A (en) * | 1986-12-22 | 1989-04-04 | Texas Instruments Incorporated | Merged bipolar/CMOS technology using electrically active trench |
US4980747A (en) * | 1986-12-22 | 1990-12-25 | Texas Instruments Inc. | Deep trench isolation with surface contact to substrate |
JPS63173360A (ja) * | 1987-01-13 | 1988-07-16 | Nec Corp | 半導体記憶装置 |
US5156989A (en) * | 1988-11-08 | 1992-10-20 | Siliconix, Incorporated | Complementary, isolated DMOS IC technology |
US5410175A (en) | 1989-08-31 | 1995-04-25 | Hamamatsu Photonics K.K. | Monolithic IC having pin photodiode and an electrically active element accommodated on the same semi-conductor substrate |
JP2662446B2 (ja) * | 1989-12-11 | 1997-10-15 | キヤノン株式会社 | 記録ヘッド及び記録ヘッド用素子基板 |
JP3093771B2 (ja) * | 1990-03-22 | 2000-10-03 | 沖電気工業株式会社 | 半導体記憶装置 |
US5386136A (en) * | 1991-05-06 | 1995-01-31 | Siliconix Incorporated | Lightly-doped drain MOSFET with improved breakdown characteristics |
JP3798808B2 (ja) * | 1991-09-27 | 2006-07-19 | ハリス・コーポレーション | 高いアーリー電壓,高周波性能及び高降伏電壓特性を具備した相補型バイポーラトランジスター及びその製造方法 |
EP0537684B1 (fr) * | 1991-10-15 | 1998-05-20 | Texas Instruments Incorporated | Transistor MOS double-diffusé latéral et sa méthode de fabrication |
JPH05109886A (ja) * | 1991-10-17 | 1993-04-30 | N M B Semiconductor:Kk | フイールドシールド分離構造の半導体装置およびその製造方法 |
US5856695A (en) * | 1991-10-30 | 1999-01-05 | Harris Corporation | BiCMOS devices |
US5374569A (en) | 1992-09-21 | 1994-12-20 | Siliconix Incorporated | Method for forming a BiCDMOS |
US5324973A (en) * | 1993-05-03 | 1994-06-28 | Motorola Inc. | Semiconductor SRAM with trench transistors |
US5420061A (en) * | 1993-08-13 | 1995-05-30 | Micron Semiconductor, Inc. | Method for improving latchup immunity in a dual-polysilicon gate process |
US5892264A (en) * | 1993-10-04 | 1999-04-06 | Harris Corporation | High frequency analog transistors, method of fabrication and circuit implementation |
JP3252569B2 (ja) * | 1993-11-09 | 2002-02-04 | 株式会社デンソー | 絶縁分離基板及びそれを用いた半導体装置及びその製造方法 |
US5498554A (en) * | 1994-04-08 | 1996-03-12 | Texas Instruments Incorporated | Method of making extended drain resurf lateral DMOS devices |
US5438005A (en) * | 1994-04-13 | 1995-08-01 | Winbond Electronics Corp. | Deep collection guard ring |
US5506431A (en) * | 1994-05-16 | 1996-04-09 | Thomas; Mammen | Double poly trenched channel accelerated tunneling electron (DPT-CATE) cell, for memory applications |
US5684305A (en) * | 1995-06-07 | 1997-11-04 | Harris Corporation | Pilot transistor for quasi-vertical DMOS device |
EP0788660B1 (fr) * | 1995-07-19 | 2001-10-17 | Koninklijke Philips Electronics N.V. | Composant a semiconducteur de type transistor lateral dmos haute tension |
FR2744285B1 (fr) | 1996-01-25 | 1998-03-06 | Commissariat Energie Atomique | Procede de transfert d'une couche mince d'un substrat initial sur un substrat final |
JPH09252049A (ja) * | 1996-03-15 | 1997-09-22 | Mitsubishi Electric Corp | 多層埋め込みトレンチアイソレーション |
JP3575908B2 (ja) * | 1996-03-28 | 2004-10-13 | 株式会社東芝 | 半導体装置 |
US5807783A (en) * | 1996-10-07 | 1998-09-15 | Harris Corporation | Surface mount die by handle replacement |
KR100205609B1 (ko) | 1997-01-06 | 1999-07-01 | 윤종용 | 정전기 보호 소자 |
US6163052A (en) * | 1997-04-04 | 2000-12-19 | Advanced Micro Devices, Inc. | Trench-gated vertical combination JFET and MOSFET devices |
US6011297A (en) * | 1997-07-18 | 2000-01-04 | Advanced Micro Devices,Inc. | Use of multiple slots surrounding base region of a bipolar junction transistor to increase cumulative breakdown voltage |
US6171982B1 (en) * | 1997-12-26 | 2001-01-09 | Canon Kabushiki Kaisha | Method and apparatus for heat-treating an SOI substrate and method of preparing an SOI substrate by using the same |
US5914523A (en) * | 1998-02-17 | 1999-06-22 | National Semiconductor Corp. | Semiconductor device trench isolation structure with polysilicon bias voltage contact |
KR100282710B1 (ko) * | 1998-03-12 | 2001-02-15 | 윤종용 | 바이폴라 트랜지스터의 제조 방법 및 그 구조 |
US6331456B1 (en) * | 1998-05-04 | 2001-12-18 | Texas Instruments - Acer Incorporated | Fipos method of forming SOI CMOS structure |
US6013936A (en) * | 1998-08-06 | 2000-01-11 | International Business Machines Corporation | Double silicon-on-insulator device and method therefor |
US20010013636A1 (en) * | 1999-01-22 | 2001-08-16 | James S. Dunn | A self-aligned, sub-minimum isolation ring |
US6316336B1 (en) | 1999-03-01 | 2001-11-13 | Richard A. Blanchard | Method for forming buried layers with top-side contacts and the resulting structure |
US6225674B1 (en) * | 1999-04-02 | 2001-05-01 | Motorola, Inc. | Semiconductor structure and method of manufacture |
EP1043775B1 (fr) * | 1999-04-06 | 2006-06-14 | STMicroelectronics S.r.l. | Circuit intégré de puissance ayant un courant vertical et son procédé de fabrication |
US6225181B1 (en) * | 1999-04-19 | 2001-05-01 | National Semiconductor Corp. | Trench isolated bipolar transistor structure integrated with CMOS technology |
US6144086A (en) | 1999-04-30 | 2000-11-07 | International Business Machines Corporation | Structure for improved latch-up using dual depth STI with impurity implant |
KR100300069B1 (ko) * | 1999-05-10 | 2001-09-26 | 김영환 | 반도체 소자 및 그 제조방법 |
US6798024B1 (en) * | 1999-07-01 | 2004-09-28 | Intersil Americas Inc. | BiCMOS process with low temperature coefficient resistor (TCRL) |
JP2001135719A (ja) * | 1999-11-01 | 2001-05-18 | Denso Corp | 半導体装置の素子分離構造 |
US6448124B1 (en) | 1999-11-12 | 2002-09-10 | International Business Machines Corporation | Method for epitaxial bipolar BiCMOS |
US6489653B2 (en) * | 1999-12-27 | 2002-12-03 | Kabushiki Kaisha Toshiba | Lateral high-breakdown-voltage transistor |
US6835627B1 (en) * | 2000-01-10 | 2004-12-28 | Analog Devices, Inc. | Method for forming a DMOS device and a DMOS device |
US6399990B1 (en) * | 2000-03-21 | 2002-06-04 | International Business Machines Corporation | Isolated well ESD device |
IT1316871B1 (it) * | 2000-03-31 | 2003-05-12 | St Microelectronics Srl | Dispositivo elettronico integrato monoliticamente e relativo processodi fabbricazione |
IT1317516B1 (it) * | 2000-05-11 | 2003-07-09 | St Microelectronics Srl | Dispositivo integrato con struttura d'isolamento a trench e relativoprocesso di realizzazione. |
US6663167B2 (en) * | 2000-05-15 | 2003-12-16 | Jeffrey O. Phillips | Collapsible shelter/camper/storage unit with a suspended floor |
JP4984345B2 (ja) * | 2000-06-21 | 2012-07-25 | 富士電機株式会社 | 半導体装置 |
SE518797C2 (sv) * | 2000-07-19 | 2002-11-19 | Ericsson Telefon Ab L M | Effekt-LDMOS-transistor innefattande ett flertal parallellkopplade transistorsegment med olika tröskelspänningar |
JP2002094063A (ja) * | 2000-09-11 | 2002-03-29 | Toshiba Corp | 半導体装置 |
US6849871B2 (en) * | 2000-10-20 | 2005-02-01 | International Business Machines Corporation | Fully-depleted-collector silicon-on-insulator (SOI) bipolar transistor useful alone or in SOI BiCMOS |
JP2002198436A (ja) | 2000-12-25 | 2002-07-12 | Sanyo Electric Co Ltd | 半導体集積回路装置およびその製造方法 |
JP2002198439A (ja) | 2000-12-26 | 2002-07-12 | Sharp Corp | 半導体装置および携帯電子機器 |
US6600199B2 (en) | 2000-12-29 | 2003-07-29 | International Business Machines Corporation | Deep trench-buried layer array and integrated device structures for noise isolation and latch up immunity |
EP1220323A3 (fr) * | 2000-12-31 | 2007-08-15 | Texas Instruments Incorporated | LDMOS ayant une zone de fonctionnement sûr améliorée |
JP2002237575A (ja) * | 2001-02-08 | 2002-08-23 | Sharp Corp | 半導体装置及びその製造方法 |
US20020117714A1 (en) * | 2001-02-28 | 2002-08-29 | Linear Technology Corporation | High voltage MOS transistor |
TW475250B (en) * | 2001-03-14 | 2002-02-01 | Taiwan Semiconductor Mfg | ESD protection circuit to be used in high-frequency input/output port with low capacitance load |
JP4811895B2 (ja) * | 2001-05-02 | 2011-11-09 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
JP2003100862A (ja) * | 2001-09-21 | 2003-04-04 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
US6563181B1 (en) * | 2001-11-02 | 2003-05-13 | Motorola, Inc. | High frequency signal isolation in a semiconductor device |
KR100456691B1 (ko) | 2002-03-05 | 2004-11-10 | 삼성전자주식회사 | 이중격리구조를 갖는 반도체 소자 및 그 제조방법 |
JP2004039866A (ja) * | 2002-07-03 | 2004-02-05 | Toshiba Corp | 半導体装置及びその製造方法 |
US7179691B1 (en) * | 2002-07-29 | 2007-02-20 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for four direction low capacitance ESD protection |
US6867462B2 (en) * | 2002-08-09 | 2005-03-15 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device using an SOI substrate and having a trench isolation and method for fabricating the same |
US6900091B2 (en) * | 2002-08-14 | 2005-05-31 | Advanced Analogic Technologies, Inc. | Isolated complementary MOS devices in epi-less substrate |
US7741661B2 (en) * | 2002-08-14 | 2010-06-22 | Advanced Analogic Technologies, Inc. | Isolation and termination structures for semiconductor die |
US7825488B2 (en) | 2006-05-31 | 2010-11-02 | Advanced Analogic Technologies, Inc. | Isolation structures for integrated circuits and modular methods of forming the same |
US7956391B2 (en) * | 2002-08-14 | 2011-06-07 | Advanced Analogic Technologies, Inc. | Isolated junction field-effect transistor |
US7902630B2 (en) | 2002-08-14 | 2011-03-08 | Advanced Analogic Technologies, Inc. | Isolated bipolar transistor |
US7834421B2 (en) * | 2002-08-14 | 2010-11-16 | Advanced Analogic Technologies, Inc. | Isolated diode |
US6943426B2 (en) * | 2002-08-14 | 2005-09-13 | Advanced Analogic Technologies, Inc. | Complementary analog bipolar transistors with trench-constrained isolation diffusion |
US20080197408A1 (en) * | 2002-08-14 | 2008-08-21 | Advanced Analogic Technologies, Inc. | Isolated quasi-vertical DMOS transistor |
US7939420B2 (en) | 2002-08-14 | 2011-05-10 | Advanced Analogic Technologies, Inc. | Processes for forming isolation structures for integrated circuit devices |
US8089129B2 (en) | 2002-08-14 | 2012-01-03 | Advanced Analogic Technologies, Inc. | Isolated CMOS transistors |
US7667268B2 (en) * | 2002-08-14 | 2010-02-23 | Advanced Analogic Technologies, Inc. | Isolated transistor |
US6855985B2 (en) * | 2002-09-29 | 2005-02-15 | Advanced Analogic Technologies, Inc. | Modular bipolar-CMOS-DMOS analog integrated circuit & power transistor technology |
US7719054B2 (en) * | 2006-05-31 | 2010-05-18 | Advanced Analogic Technologies, Inc. | High-voltage lateral DMOS device |
US7576388B1 (en) * | 2002-10-03 | 2009-08-18 | Fairchild Semiconductor Corporation | Trench-gate LDMOS structures |
SE0303099D0 (sv) * | 2003-11-21 | 2003-11-21 | Infineon Technologies Ag | Method in the fabrication of a monolithically integrated high frequency circuit |
US7205584B2 (en) * | 2003-12-22 | 2007-04-17 | Micron Technology, Inc. | Image sensor for reduced dark current |
US20050179111A1 (en) * | 2004-02-12 | 2005-08-18 | Iwen Chao | Semiconductor device with low resistive path barrier |
WO2005078801A1 (fr) * | 2004-02-17 | 2005-08-25 | Nanyang Technological University | Procede et dispositif de photodetection sensible a la longueur d'onde |
US7304354B2 (en) * | 2004-02-17 | 2007-12-04 | Silicon Space Technology Corp. | Buried guard ring and radiation hardened isolation structures and fabrication methods |
JP4429036B2 (ja) * | 2004-02-27 | 2010-03-10 | 富士通マイクロエレクトロニクス株式会社 | 半導体装置の製造方法 |
TWI231986B (en) | 2004-03-22 | 2005-05-01 | Sunplus Technology Co Ltd | ESD protection device for high voltage and negative voltage tolerance |
TWI256676B (en) * | 2004-03-26 | 2006-06-11 | Siliconix Inc | Termination for trench MIS device having implanted drain-drift region |
US7009271B1 (en) * | 2004-04-13 | 2006-03-07 | Advanced Micro Devices, Inc. | Memory device with an alternating Vss interconnection |
US7183610B2 (en) * | 2004-04-30 | 2007-02-27 | Siliconix Incorporated | Super trench MOSFET including buried source electrode and method of fabricating the same |
JP4592340B2 (ja) | 2004-06-29 | 2010-12-01 | 三洋電機株式会社 | 半導体装置の製造方法 |
JP2006074012A (ja) * | 2004-08-06 | 2006-03-16 | Renesas Technology Corp | 双方向型静電気放電保護素子 |
US7335948B2 (en) * | 2004-08-23 | 2008-02-26 | Enpirion, Inc. | Integrated circuit incorporating higher voltage devices and low voltage devices therein |
US20060076629A1 (en) * | 2004-10-07 | 2006-04-13 | Hamza Yilmaz | Semiconductor devices with isolation and sinker regions containing trenches filled with conductive material |
JP4959140B2 (ja) * | 2005-02-04 | 2012-06-20 | 株式会社日立超エル・エス・アイ・システムズ | 半導体装置 |
CN2821868Y (zh) * | 2005-05-19 | 2006-09-27 | 崇贸科技股份有限公司 | 具有隔离结构的mos场效应晶体管 |
JP4519716B2 (ja) | 2005-06-02 | 2010-08-04 | 富士通セミコンダクター株式会社 | 整流回路用ダイオードを有する半導体装置 |
US7719080B2 (en) | 2005-06-20 | 2010-05-18 | Teledyne Scientific & Imaging, Llc | Semiconductor device with a conduction enhancement layer |
TWI256673B (en) * | 2005-09-05 | 2006-06-11 | United Microelectronics Corp | High voltage metal oxide semiconductor and fabricating method thereof |
US20070132056A1 (en) * | 2005-12-09 | 2007-06-14 | Advanced Analogic Technologies, Inc. | Isolation structures for semiconductor integrated circuit substrates and methods of forming the same |
US20070158779A1 (en) * | 2006-01-12 | 2007-07-12 | International Business Machines Corporation | Methods and semiconductor structures for latch-up suppression using a buried damage layer |
US7718481B2 (en) * | 2006-04-17 | 2010-05-18 | International Business Machines Corporation | Semiconductor structure and method of manufacture |
US7626243B2 (en) * | 2006-08-04 | 2009-12-01 | Advanced Analogic Technologies, Inc. | ESD protection for bipolar-CMOS-DMOS integrated circuit devices |
US7737526B2 (en) * | 2007-03-28 | 2010-06-15 | Advanced Analogic Technologies, Inc. | Isolated trench MOSFET in epi-less semiconductor sustrate |
US8030731B2 (en) | 2007-03-28 | 2011-10-04 | Advanced Analogic Technologies, Inc. | Isolated rectifier diode |
US7541247B2 (en) * | 2007-07-16 | 2009-06-02 | International Business Machines Corporation | Guard ring structures for high voltage CMOS/low voltage CMOS technology using LDMOS (lateral double-diffused metal oxide semiconductor) device fabrication |
US7683427B2 (en) * | 2007-09-18 | 2010-03-23 | United Microelectronics Corp. | Laterally diffused metal-oxide-semiconductor device and method of making the same |
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2008
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2009
- 2009-02-25 CN CN200980115026.8A patent/CN102037562B/zh not_active Expired - Fee Related
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- 2009-02-25 WO PCT/US2009/001187 patent/WO2009108311A2/fr active Application Filing
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Also Published As
Publication number | Publication date |
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EP2248162A4 (fr) | 2015-08-12 |
TWI415262B (zh) | 2013-11-11 |
US20110260246A1 (en) | 2011-10-27 |
TW200945589A (en) | 2009-11-01 |
KR20130103640A (ko) | 2013-09-23 |
CN102867843B (zh) | 2015-05-20 |
KR20140065485A (ko) | 2014-05-29 |
CN102037562B (zh) | 2014-11-26 |
US8664715B2 (en) | 2014-03-04 |
JP2011514675A (ja) | 2011-05-06 |
KR101303405B1 (ko) | 2013-09-05 |
KR101363663B1 (ko) | 2014-02-14 |
CN102867843A (zh) | 2013-01-09 |
WO2009108311A3 (fr) | 2009-10-22 |
EP2248162A2 (fr) | 2010-11-10 |
KR20120115600A (ko) | 2012-10-18 |
KR101483404B1 (ko) | 2015-01-15 |
JP5449203B2 (ja) | 2014-03-19 |
US7667268B2 (en) | 2010-02-23 |
CN102037562A (zh) | 2011-04-27 |
US20100133611A1 (en) | 2010-06-03 |
KR20110007109A (ko) | 2011-01-21 |
US20080191277A1 (en) | 2008-08-14 |
US8659116B2 (en) | 2014-02-25 |
WO2009108311A2 (fr) | 2009-09-03 |
KR101456408B1 (ko) | 2014-11-04 |
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