TWI256673B - High voltage metal oxide semiconductor and fabricating method thereof - Google Patents
High voltage metal oxide semiconductor and fabricating method thereofInfo
- Publication number
- TWI256673B TWI256673B TW94130276A TW94130276A TWI256673B TW I256673 B TWI256673 B TW I256673B TW 94130276 A TW94130276 A TW 94130276A TW 94130276 A TW94130276 A TW 94130276A TW I256673 B TWI256673 B TW I256673B
- Authority
- TW
- Taiwan
- Prior art keywords
- drift regions
- gate
- regions
- high voltage
- source
- Prior art date
Links
Landscapes
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
A high voltage MOS transistor comprising a substrate, a well, a gate insulating layer, a gate, two drift regions, a channel region, a source/drain region and an insulator is provided. The well is disposed in the substrate. The gate insulating layer is formed over the substrate. The gate is disposed over the gate insulating layer. The drift regions are located in the well beside the gate, wherein the gate has a width not more than that of the drift regions. The channel region is located between the drift regions, wherein the channel region has a width larger that of the drift regions. The source/drain regions are formed in the two drift regions respectively. The insulator is formed in the two drift regions and between the channel region and the source/drain regions. The insulator and the source/drain regions are surrounded by the two drift regions.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW94130276A TWI256673B (en) | 2005-09-05 | 2005-09-05 | High voltage metal oxide semiconductor and fabricating method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW94130276A TWI256673B (en) | 2005-09-05 | 2005-09-05 | High voltage metal oxide semiconductor and fabricating method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TWI256673B true TWI256673B (en) | 2006-06-11 |
| TW200713578A TW200713578A (en) | 2007-04-01 |
Family
ID=37614743
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW94130276A TWI256673B (en) | 2005-09-05 | 2005-09-05 | High voltage metal oxide semiconductor and fabricating method thereof |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TWI256673B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI415262B (en) * | 2008-02-27 | 2013-11-11 | Advanced Analogic Tech Inc | Isolated transistors and diodes and isolation and termination structures for semiconductor die |
| TWI584476B (en) * | 2011-08-25 | 2017-05-21 | 聯華電子股份有限公司 | High voltage metal-oxide-semiconductor transistor device and method of fabricating the same |
-
2005
- 2005-09-05 TW TW94130276A patent/TWI256673B/en active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI415262B (en) * | 2008-02-27 | 2013-11-11 | Advanced Analogic Tech Inc | Isolated transistors and diodes and isolation and termination structures for semiconductor die |
| TWI584476B (en) * | 2011-08-25 | 2017-05-21 | 聯華電子股份有限公司 | High voltage metal-oxide-semiconductor transistor device and method of fabricating the same |
Also Published As
| Publication number | Publication date |
|---|---|
| TW200713578A (en) | 2007-04-01 |
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