IT1317516B1 - Dispositivo integrato con struttura d'isolamento a trench e relativoprocesso di realizzazione. - Google Patents

Dispositivo integrato con struttura d'isolamento a trench e relativoprocesso di realizzazione.

Info

Publication number
IT1317516B1
IT1317516B1 IT2000MI001044A ITMI20001044A IT1317516B1 IT 1317516 B1 IT1317516 B1 IT 1317516B1 IT 2000MI001044 A IT2000MI001044 A IT 2000MI001044A IT MI20001044 A ITMI20001044 A IT MI20001044A IT 1317516 B1 IT1317516 B1 IT 1317516B1
Authority
IT
Italy
Prior art keywords
realization
integrated device
insulation structure
trench insulation
relative process
Prior art date
Application number
IT2000MI001044A
Other languages
English (en)
Inventor
Salvatore Leonardi
Original Assignee
St Microelectronics Srl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by St Microelectronics Srl filed Critical St Microelectronics Srl
Priority to IT2000MI001044A priority Critical patent/IT1317516B1/it
Publication of ITMI20001044A0 publication Critical patent/ITMI20001044A0/it
Priority to US09/853,833 priority patent/US6798037B2/en
Publication of ITMI20001044A1 publication Critical patent/ITMI20001044A1/it
Application granted granted Critical
Publication of IT1317516B1 publication Critical patent/IT1317516B1/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/763—Polycrystalline semiconductor regions

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)
  • Pressure Sensors (AREA)
IT2000MI001044A 2000-05-11 2000-05-11 Dispositivo integrato con struttura d'isolamento a trench e relativoprocesso di realizzazione. IT1317516B1 (it)

Priority Applications (2)

Application Number Priority Date Filing Date Title
IT2000MI001044A IT1317516B1 (it) 2000-05-11 2000-05-11 Dispositivo integrato con struttura d'isolamento a trench e relativoprocesso di realizzazione.
US09/853,833 US6798037B2 (en) 2000-05-11 2001-05-10 Isolation trench structure for integrated devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT2000MI001044A IT1317516B1 (it) 2000-05-11 2000-05-11 Dispositivo integrato con struttura d'isolamento a trench e relativoprocesso di realizzazione.

Publications (3)

Publication Number Publication Date
ITMI20001044A0 ITMI20001044A0 (it) 2000-05-11
ITMI20001044A1 ITMI20001044A1 (it) 2001-11-11
IT1317516B1 true IT1317516B1 (it) 2003-07-09

Family

ID=11445026

Family Applications (1)

Application Number Title Priority Date Filing Date
IT2000MI001044A IT1317516B1 (it) 2000-05-11 2000-05-11 Dispositivo integrato con struttura d'isolamento a trench e relativoprocesso di realizzazione.

Country Status (2)

Country Link
US (1) US6798037B2 (it)
IT (1) IT1317516B1 (it)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7454760B2 (en) * 2002-04-22 2008-11-18 Rosebud Lms, Inc. Method and software for enabling n-way collaborative work over a network of computers
US20080197408A1 (en) * 2002-08-14 2008-08-21 Advanced Analogic Technologies, Inc. Isolated quasi-vertical DMOS transistor
US7667268B2 (en) * 2002-08-14 2010-02-23 Advanced Analogic Technologies, Inc. Isolated transistor
US8513087B2 (en) * 2002-08-14 2013-08-20 Advanced Analogic Technologies, Incorporated Processes for forming isolation structures for integrated circuit devices
US7741661B2 (en) * 2002-08-14 2010-06-22 Advanced Analogic Technologies, Inc. Isolation and termination structures for semiconductor die
US8089129B2 (en) * 2002-08-14 2012-01-03 Advanced Analogic Technologies, Inc. Isolated CMOS transistors
US7825488B2 (en) * 2006-05-31 2010-11-02 Advanced Analogic Technologies, Inc. Isolation structures for integrated circuits and modular methods of forming the same
US7812403B2 (en) * 2002-08-14 2010-10-12 Advanced Analogic Technologies, Inc. Isolation structures for integrated circuit devices
US7939420B2 (en) * 2002-08-14 2011-05-10 Advanced Analogic Technologies, Inc. Processes for forming isolation structures for integrated circuit devices
US7834421B2 (en) * 2002-08-14 2010-11-16 Advanced Analogic Technologies, Inc. Isolated diode
US7956391B2 (en) * 2002-08-14 2011-06-07 Advanced Analogic Technologies, Inc. Isolated junction field-effect transistor
US7902630B2 (en) * 2002-08-14 2011-03-08 Advanced Analogic Technologies, Inc. Isolated bipolar transistor
US6815714B1 (en) * 2003-02-20 2004-11-09 National Semiconductor Corporation Conductive structure in a semiconductor material
JP4326835B2 (ja) * 2003-05-20 2009-09-09 三菱電機株式会社 半導体装置、半導体装置の製造方法及び半導体装置の製造プロセス評価方法
DE102004004512B4 (de) * 2004-01-23 2008-07-10 Atmel Germany Gmbh Integrierte Schaltung mit lateraler dielektrischer Isolation aktiver Bereiche über elektrisch kontaktiertem vergrabenem Material und Herstellungsverfahren
US20060076629A1 (en) * 2004-10-07 2006-04-13 Hamza Yilmaz Semiconductor devices with isolation and sinker regions containing trenches filled with conductive material
US7256119B2 (en) * 2005-05-20 2007-08-14 Semiconductor Components Industries, L.L.C. Semiconductor device having trench structures and method
KR100867977B1 (ko) 2006-10-11 2008-11-10 한국과학기술원 인도시아닌 그린 혈중 농도 역학을 이용한 조직 관류 분석장치 및 그를 이용한 조직 관류 분석방법
US7550361B2 (en) * 2007-01-02 2009-06-23 International Business Machines Corporation Trench structure and method for co-alignment of mixed optical and electron beam lithographic fabrication levels
US7737526B2 (en) * 2007-03-28 2010-06-15 Advanced Analogic Technologies, Inc. Isolated trench MOSFET in epi-less semiconductor sustrate
US8138570B2 (en) * 2007-03-28 2012-03-20 Advanced Analogic Technologies, Inc. Isolated junction field-effect transistor
US8652925B2 (en) 2010-07-19 2014-02-18 International Business Machines Corporation Method of fabricating isolated capacitors and structure thereof
US8921202B2 (en) 2011-01-07 2014-12-30 Vanguard International Semiconductor Corporation Semiconductor device and fabrication method thereof
US10262997B2 (en) * 2017-09-14 2019-04-16 Vanguard International Semiconductor Corporation High-voltage LDMOSFET devices having polysilicon trench-type guard rings

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4980747A (en) * 1986-12-22 1990-12-25 Texas Instruments Inc. Deep trench isolation with surface contact to substrate
JPH05109886A (ja) * 1991-10-17 1993-04-30 N M B Semiconductor:Kk フイールドシールド分離構造の半導体装置およびその製造方法
US5665633A (en) * 1995-04-06 1997-09-09 Motorola, Inc. Process for forming a semiconductor device having field isolation

Also Published As

Publication number Publication date
ITMI20001044A1 (it) 2001-11-11
US20020008299A1 (en) 2002-01-24
ITMI20001044A0 (it) 2000-05-11
US6798037B2 (en) 2004-09-28

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