JP6937281B2 - 半導体装置 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims description 230
- 239000012535 impurity Substances 0.000 claims description 66
- 239000004020 conductor Substances 0.000 claims description 12
- 230000004888 barrier function Effects 0.000 description 29
- 239000000758 substrate Substances 0.000 description 25
- 229910052751 metal Inorganic materials 0.000 description 11
- 239000002184 metal Substances 0.000 description 11
- 238000000034 method Methods 0.000 description 10
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 5
- 229910052785 arsenic Inorganic materials 0.000 description 5
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 5
- 229910052796 boron Inorganic materials 0.000 description 5
- 229910052698 phosphorus Inorganic materials 0.000 description 5
- 239000011574 phosphorus Substances 0.000 description 5
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- 229910000838 Al alloy Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000002457 bidirectional effect Effects 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- -1 tungsten nitride Chemical class 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005549 size reduction Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/87—Thyristor diodes, e.g. Shockley diodes, break-over diodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0259—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using bipolar transistors as protective elements
- H01L27/0262—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using bipolar transistors as protective elements including a PNP transistor and a NPN transistor, wherein each of said transistors has its base coupled to the collector of the other transistor, e.g. silicon controlled rectifier [SCR] devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/535—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including internal interconnections, e.g. cross-under constructions
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- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
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Description
第1の実施形態の半導体装置は、第1の面と第2の面を有する半導体層と、半導体層の中に設けられた第1導電型の第1の半導体領域と、半導体層の中に設けられ、第1の半導体領域と第1の面との間に位置する第2導電型の第2の半導体領域と、半導体層の中に設けられ、第2の半導体領域と第1の面との間に位置し、第1の半導体領域よりも第1導電型不純物濃度の低い第1導電型の第3の半導体領域と、半導体層の中に設けられ、第3の半導体領域と第1の面との間に位置し、第2の半導体領域よりも第2導電型不純物濃度の高い第2導電型の第4の半導体領域と、半導体層の中に設けられ、第1の半導体領域と第1の面との間に設けられ、第3の半導体領域との間に第2の半導体領域を挟む第1導電型の第5の半導体領域と、半導体層の第1の面の側に設けられ、第3の半導体領域と第4の半導体領域に電気的に接続された第1の電極と、半導体層の第2の面の側に設けられ、前記第1の半導体領域と電気的に接続された第2の電極と、半導体層の第1の面の側に設けられ、第2の半導体領域と第5の半導体領域とを電気的に接続する導電層と、を備える。
第2の実施形態の半導体装置は、第1の面と第2の面を有する半導体層と、半導体層の中に設けられた第1導電型の第1の半導体領域と、半導体層の中に設けられ、第1の半導体領域と前記第1の面との間に位置する第2導電型の第2の半導体領域と、半導体層の中に設けられ、第2の半導体領域と第1の面との間に位置し、第1の半導体領域よりも第1導電型不純物濃度の低い第1導電型の第3の半導体領域と、半導体層の中に設けられ、第3の半導体領域と第1の面との間に位置し、第2の半導体領域よりも第2導電型不純物濃度の高い第2導電型の第4の半導体領域と、半導体層の中に設けられ、第1の半導体領域と第1の面との間に設けられ、第1の半導体領域に接する導電体と、導電体と半導体層との間に設けられた絶縁層と、半導体層の第1の面の側に設けられ、第3の半導体領域と第4の半導体領域に電気的に接続された第1の電極と、半導体層の第2の面の側に設けられ、第1の半導体領域と電気的に接続された第2の電極と、半導体層の第1の面の側に設けられ、第2の半導体領域と前記導電体とを電気的に接続する導電層と、を備える。
12 カソード電極(第1の電極)
14 アノード電極(第2の電極)
16 配線層(導電層)
20 基板領域(第1の半導体領域)
22 アノード領域(第2の半導体領域)
24 カソード領域(第3の半導体領域)
26 第1のコンタクト領域(第4の半導体領域)
30 接続領域(第5の半導体領域)
36 第1のバリア領域(第6の半導体領域)
38 第2のバリア領域(第7の半導体領域)
40 埋め込み接続層(導電体)
42 絶縁層
100 ESD保護ダイオード(半導体装置)
200 ESD保護ダイオード(半導体装置)
P1 第1の面
P2 第2の面
Claims (7)
- 第1の面と第2の面を有する半導体層と、
前記半導体層の中に設けられた第1導電型の第1の半導体領域と、
前記半導体層の中に設けられ、前記第1の半導体領域と前記第1の面との間に位置する第2導電型の第2の半導体領域と、
前記半導体層の中に設けられ、前記第2の半導体領域と前記第1の面との間に位置し、前記第1の半導体領域よりも第1導電型不純物濃度の低い第1導電型の第3の半導体領域と、
前記半導体層の中に設けられ、前記第3の半導体領域と前記第1の面との間に位置し、前記第2の半導体領域よりも第2導電型不純物濃度の高い第2導電型の第4の半導体領域と、
前記半導体層の中に設けられ、前記第1の半導体領域と前記第1の面との間に設けられ、前記第3の半導体領域との間に前記第2の半導体領域を挟む第1導電型の第5の半導体領域と、
前記半導体層の前記第1の面の側に設けられ、前記第3の半導体領域と前記第4の半導体領域に電気的に接続された第1の電極と、
前記半導体層の前記第2の面の側に設けられ、前記第1の半導体領域と電気的に接続された第2の電極と、
前記半導体層の前記第1の面の側に設けられ、前記第2の半導体領域と前記第5の半導体領域とを電気的に接続する導電層と、
を備える半導体装置。 - 前記第1の半導体領域と前記第2の半導体領域との間に設けられ、前記第2の半導体領域よりも第2導電型不純物濃度の高い第2導電型の第6の半導体領域を、更に備える請求項1記載の半導体装置。
- 前記第5の半導体領域と前記第2の半導体領域との間に設けられ、前記第2の半導体領域よりも第2導電型不純物濃度の高い第2導電型の第7の半導体領域を、更に備える請求項1又は請求項2記載の半導体装置。
- 前記第5の半導体領域は前記第1の半導体領域と接し、前記第5の半導体領域は前記第1の面と接する請求項1ないし請求項3いずれか一項記載の半導体装置。
- 第1の面と第2の面を有する半導体層と、
前記半導体層の中に設けられた第1導電型の第1の半導体領域と、
前記半導体層の中に設けられ、前記第1の半導体領域と前記第1の面との間に位置する第2導電型の第2の半導体領域と、
前記半導体層の中に設けられ、前記第2の半導体領域と前記第1の面との間に位置し、前記第1の半導体領域よりも第1導電型不純物濃度の低い第1導電型の第3の半導体領域と、
前記半導体層の中に設けられ、前記第3の半導体領域と前記第1の面との間に位置し、前記第2の半導体領域よりも第2導電型不純物濃度の高い第2導電型の第4の半導体領域と、
前記半導体層の中に設けられ、前記第1の半導体領域と前記第1の面との間に設けられ、前記第1の半導体領域に接する導電体と、
前記導電体と前記半導体層との間に設けられた絶縁層と、
前記半導体層の前記第1の面の側に設けられ、前記第3の半導体領域と前記第4の半導体領域に電気的に接続された第1の電極と、
前記半導体層の前記第2の面の側に設けられ、前記第1の半導体領域と電気的に接続された第2の電極と、
前記半導体層の前記第1の面の側に設けられ、前記第2の半導体領域と前記導電体とを電気的に接続する導電層と、
を備える半導体装置。 - 前記第1の半導体領域と前記第2の半導体領域との間に設けられ、前記第2の半導体領域よりも第2導電型不純物濃度の高い第2導電型の第6の半導体領域を、更に備える請求項5記載の半導体装置。
- 前記導電体は、前記第2の半導体領域を貫通する請求項5又は請求項6記載の半導体装置。
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US16/255,970 US10896903B2 (en) | 2018-09-14 | 2019-01-24 | Semiconductor device |
CN201910112743.0A CN110911500B (zh) | 2018-09-14 | 2019-02-13 | 半导体装置 |
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CN1976028B (zh) * | 2005-11-28 | 2012-02-29 | 株式会社东芝 | Esd保护元件 |
WO2007135694A1 (en) * | 2006-05-18 | 2007-11-29 | Stmicroelectronics S.R.L. | Three- terminal power device with high switching speed and manufacturing process |
JP2008172165A (ja) * | 2007-01-15 | 2008-07-24 | Toshiba Corp | 半導体装置 |
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US20200091134A1 (en) | 2020-03-19 |
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