HK1149630A1 - Colloidal silica with modified surface and polishing composition for cmp containing the same - Google Patents

Colloidal silica with modified surface and polishing composition for cmp containing the same

Info

Publication number
HK1149630A1
HK1149630A1 HK11103608.5A HK11103608A HK1149630A1 HK 1149630 A1 HK1149630 A1 HK 1149630A1 HK 11103608 A HK11103608 A HK 11103608A HK 1149630 A1 HK1149630 A1 HK 1149630A1
Authority
HK
Hong Kong
Prior art keywords
same
colloidal silica
polishing composition
modified surface
cmp containing
Prior art date
Application number
HK11103608.5A
Other languages
English (en)
Original Assignee
Adeka Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Adeka Corp filed Critical Adeka Corp
Publication of HK1149630A1 publication Critical patent/HK1149630A1/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/113—Silicon oxides; Hydrates thereof
    • C01B33/12—Silica; Hydrates thereof, e.g. lepidoic silicic acid
    • C01B33/14—Colloidal silica, e.g. dispersions, gels, sols
    • C01B33/146—After-treatment of sols
    • C01B33/149—Coating
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09C—TREATMENT OF INORGANIC MATERIALS, OTHER THAN FIBROUS FILLERS, TO ENHANCE THEIR PIGMENTING OR FILLING PROPERTIES ; PREPARATION OF CARBON BLACK  ; PREPARATION OF INORGANIC MATERIALS WHICH ARE NO SINGLE CHEMICAL COMPOUNDS AND WHICH ARE MAINLY USED AS PIGMENTS OR FILLERS
    • C09C1/00—Treatment of specific inorganic materials other than fibrous fillers; Preparation of carbon black
    • C09C1/28—Compounds of silicon
    • C09C1/30—Silicic acid
    • C09C1/3072—Treatment with macro-molecular organic compounds
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1436—Composite particles, e.g. coated particles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Dispersion Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Composite Materials (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Silicon Compounds (AREA)
HK11103608.5A 2008-03-24 2011-04-11 Colloidal silica with modified surface and polishing composition for cmp containing the same HK1149630A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2008075347 2008-03-24
PCT/JP2009/052467 WO2009119178A1 (ja) 2008-03-24 2009-02-16 表面改質コロイダルシリカおよびこれを含有するｃｍｐ用研磨組成物

Publications (1)

Publication Number Publication Date
HK1149630A1 true HK1149630A1 (en) 2011-10-07

Family

ID=41113386

Family Applications (1)

Application Number Title Priority Date Filing Date
HK11103608.5A HK1149630A1 (en) 2008-03-24 2011-04-11 Colloidal silica with modified surface and polishing composition for cmp containing the same

Country Status (6)

Country Link
JP (1) JP4521058B2 (xx)
KR (1) KR101180225B1 (xx)
CN (1) CN101981665B (xx)
HK (1) HK1149630A1 (xx)
TW (1) TWI439496B (xx)
WO (1) WO2009119178A1 (xx)

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JP5878020B2 (ja) * 2009-11-11 2016-03-08 株式会社クラレ 化学的機械的研磨用スラリー並びにそれを用いる基板の研磨方法
JP5481166B2 (ja) * 2009-11-11 2014-04-23 株式会社クラレ 化学的機械的研磨用スラリー
KR101243331B1 (ko) 2010-12-17 2013-03-13 솔브레인 주식회사 화학 기계적 연마 슬러리 조성물 및 이를 이용하는 반도체 소자의 제조 방법
US8435896B2 (en) * 2011-03-03 2013-05-07 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Stable, concentratable chemical mechanical polishing composition and methods relating thereto
US8440097B2 (en) * 2011-03-03 2013-05-14 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Stable, concentratable, water soluble cellulose free chemical mechanical polishing composition
EP2722872A4 (en) 2011-06-14 2015-04-29 Fujimi Inc POLISHING COMPOSITION
CN102504610B (zh) * 2011-09-22 2013-12-11 航天特种材料及工艺技术研究所 一种提高纳米SiO2在酚醛树脂溶液中分散性的方法
KR101147855B1 (ko) * 2011-10-13 2012-05-24 주식회사 한나노텍 구형의 실리카 코어-고분자 쉘 하이브리드 입자들의 제조방법
JP5882024B2 (ja) * 2011-11-01 2016-03-09 花王株式会社 研磨液組成物
CN102660195B (zh) * 2012-05-02 2014-04-02 常熟奥首光电材料有限公司 表面改性纳米磨料硅片抛光液
KR102154250B1 (ko) 2012-11-02 2020-09-09 가부시키가이샤 후지미인코퍼레이티드 연마용 조성물
JP6054149B2 (ja) * 2012-11-15 2016-12-27 株式会社フジミインコーポレーテッド 研磨用組成物
JP6057706B2 (ja) * 2012-12-28 2017-01-11 株式会社フジミインコーポレーテッド 研磨用組成物
KR101427883B1 (ko) * 2013-02-08 2014-08-07 주식회사 케이씨텍 표면 개질된 연마입자, 그의 제조 방법 및 그를 포함하는 슬러리 조성물
JP2015000877A (ja) * 2013-06-13 2015-01-05 株式会社Adeka 研磨用担持体、研磨液組成物及び研磨方法
JP6243671B2 (ja) * 2013-09-13 2017-12-06 株式会社フジミインコーポレーテッド 研磨用組成物
CN104528741B (zh) * 2014-12-17 2016-08-24 北京科技大学 一种有机改性纳米孔二氧化硅气凝胶及其制备方法
US9803109B2 (en) * 2015-02-03 2017-10-31 Cabot Microelectronics Corporation CMP composition for silicon nitride removal
US10723628B2 (en) 2015-07-10 2020-07-28 Evonik Operations Gmbh SiO2 containing dispersion with high salt stability
CN107922197B (zh) * 2015-07-10 2021-11-19 赢创运营有限公司 具有高盐稳定性的含金属氧化物的分散体
CN108291137B (zh) 2015-10-26 2021-01-12 赢创运营有限公司 使用二氧化硅流体获得矿物油的方法
KR102079041B1 (ko) * 2016-07-04 2020-02-20 오씨아이 주식회사 실리콘 기판 식각 용액
JP7153566B2 (ja) * 2017-01-11 2022-10-14 株式会社フジミインコーポレーテッド 研磨用組成物
JP6901297B2 (ja) * 2017-03-22 2021-07-14 株式会社フジミインコーポレーテッド 研磨用組成物
JP2020075830A (ja) * 2018-11-07 2020-05-21 三菱ケミカル株式会社 シリカゾルの製造方法及びシリカゾル中の中間生成物の抑制方法
CN109590820B (zh) * 2019-01-02 2021-07-06 中国科学院上海光学精密机械研究所 超硬激光晶体表面粗糙度的加工方法
US11198797B2 (en) * 2019-01-24 2021-12-14 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing compositions having stabilized abrasive particles for polishing dielectric substrates
KR20200143144A (ko) * 2019-06-14 2020-12-23 삼성전자주식회사 슬러리 조성물 및 이를 이용한 집적회로 소자의 제조 방법
JP2020203980A (ja) * 2019-06-17 2020-12-24 日本キャボット・マイクロエレクトロニクス株式会社 化学機械研磨組成物、リンス組成物、化学機械研磨方法及びリンス方法
JP7452963B2 (ja) * 2019-09-19 2024-03-19 株式会社フジミインコーポレーテッド ウェットブラスト用スラリー
KR102525287B1 (ko) 2019-10-18 2023-04-24 삼성에스디아이 주식회사 구리 막 연마용 ｃｍｐ 슬러리 조성물 및 이를 이용한 구리 막 연마 방법
KR20210079573A (ko) * 2019-12-20 2021-06-30 주식회사 케이씨텍 유기막 연마용 슬러리 조성물
JP2023005463A (ja) 2021-06-29 2023-01-18 株式会社フジミインコーポレーテッド 表面修飾コロイダルシリカおよびこれを含む研磨用組成物
CN113999520A (zh) * 2021-12-21 2022-02-01 中国人民解放军63919部队 一种透明橡胶气密材料及其制备方法和应用
CN114560468B (zh) * 2022-02-25 2022-09-16 金三江(肇庆)硅材料股份有限公司 一种化学机械抛光用二氧化硅及其制备方法和应用
US20230323158A1 (en) * 2022-03-24 2023-10-12 Cmc Materials, Inc. Dual additive polishing composition for glass substrates
TW202403007A (zh) * 2022-03-28 2024-01-16 日商Jsr 股份有限公司 研磨粒的製造方法、化學機械研磨用組成物及研磨方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3235864B2 (ja) * 1992-03-28 2001-12-04 触媒化成工業株式会社 無機酸化物コロイド粒子
EP1188714B1 (en) * 2000-01-25 2015-03-04 Nippon Aerosil Co., Ltd. Oxide powder and method for preparing the same, and product using the same
JP2005154222A (ja) * 2003-11-27 2005-06-16 Tokuyama Corp 微粒子状シリカ
JP4775260B2 (ja) * 2004-04-12 2011-09-21 日立化成工業株式会社 金属用研磨液及びこれを用いた研磨方法
JP2007299942A (ja) * 2006-04-28 2007-11-15 Fujifilm Corp 金属研磨用組成物及びそれを用いた化学的機械的研磨方法

Also Published As

Publication number Publication date
CN101981665B (zh) 2012-11-21
KR20100137537A (ko) 2010-12-30
TW200940606A (en) 2009-10-01
WO2009119178A1 (ja) 2009-10-01
JP4521058B2 (ja) 2010-08-11
CN101981665A (zh) 2011-02-23
TWI439496B (zh) 2014-06-01
JP2009256184A (ja) 2009-11-05
KR101180225B1 (ko) 2012-09-05

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Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20170216