SG10201605686XA - Polishing Composition And Polishing Method Using The Same - Google Patents
Polishing Composition And Polishing Method Using The SameInfo
- Publication number
- SG10201605686XA SG10201605686XA SG10201605686XA SG10201605686XA SG10201605686XA SG 10201605686X A SG10201605686X A SG 10201605686XA SG 10201605686X A SG10201605686X A SG 10201605686XA SG 10201605686X A SG10201605686X A SG 10201605686XA SG 10201605686X A SG10201605686X A SG 10201605686XA
- Authority
- SG
- Singapore
- Prior art keywords
- polishing
- same
- composition
- polishing composition
- polishing method
- Prior art date
Links
- 238000005498 polishing Methods 0.000 title 2
- 238000000034 method Methods 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1436—Composite particles, e.g. coated particles
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02024—Mirror polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Composite Materials (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008023229 | 2008-02-01 | ||
JP2008151969 | 2008-06-10 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10201605686XA true SG10201605686XA (en) | 2016-08-30 |
Family
ID=40912840
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201605686XA SG10201605686XA (en) | 2008-02-01 | 2009-01-29 | Polishing Composition And Polishing Method Using The Same |
SG2013007075A SG188090A1 (en) | 2008-02-01 | 2009-01-29 | Polishing composition and polishing method using the same |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG2013007075A SG188090A1 (en) | 2008-02-01 | 2009-01-29 | Polishing composition and polishing method using the same |
Country Status (8)
Country | Link |
---|---|
US (1) | US10144849B2 (en) |
EP (1) | EP2237311A4 (en) |
JP (2) | JPWO2009096495A1 (en) |
KR (2) | KR101564676B1 (en) |
CN (2) | CN103131330B (en) |
SG (2) | SG10201605686XA (en) |
TW (1) | TWI554600B (en) |
WO (1) | WO2009096495A1 (en) |
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JP6411708B2 (en) * | 2011-06-14 | 2018-10-24 | 株式会社フジミインコーポレーテッド | Polishing composition |
JP6407503B2 (en) * | 2011-06-14 | 2018-10-17 | 株式会社フジミインコーポレーテッド | Polishing composition |
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US9579769B2 (en) | 2011-10-24 | 2017-02-28 | Fujimi Incorporated | Composition for polishing purposes, polishing method using same, and method for producing substrate |
DE112013004295T5 (en) * | 2012-08-31 | 2015-05-13 | Fujimi Incorporated | Polishing composition and method of making a substrate |
KR102226441B1 (en) * | 2013-02-13 | 2021-03-12 | 가부시키가이샤 후지미인코퍼레이티드 | Polishing composition, production method for polishing composition, and production method for polished article |
CN105264647B (en) * | 2013-06-07 | 2018-01-09 | 福吉米株式会社 | Silicon Wafer composition for polishing |
WO2015068672A1 (en) * | 2013-11-08 | 2015-05-14 | 東亞合成株式会社 | Wetting agent and polishing composition for semiconductor |
MY182263A (en) * | 2014-01-31 | 2021-01-18 | Hoya Corp | Method for manufacturing magnetic-disk substrate and method for manufacturing magnetic disk |
JP6376599B2 (en) * | 2014-12-26 | 2018-08-22 | 花王株式会社 | Silica dispersion |
WO2016132951A1 (en) * | 2015-02-19 | 2016-08-25 | 株式会社フジミインコーポレーテッド | Polishing composition |
TWI654293B (en) | 2015-03-17 | 2019-03-21 | 德商福斯石油股份公司 | Additive compositions and industrial process fluids |
JP6393228B2 (en) * | 2015-03-31 | 2018-09-19 | 株式会社フジミインコーポレーテッド | Polishing composition and method for producing polished article |
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KR102463863B1 (en) * | 2015-07-20 | 2022-11-04 | 삼성전자주식회사 | Polishing compositions and methods of manufacturing semiconductor devices using the same |
US9293339B1 (en) * | 2015-09-24 | 2016-03-22 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Method of polishing semiconductor substrate |
JP6728939B2 (en) * | 2016-04-27 | 2020-07-22 | 日立化成株式会社 | Abrasive, abrasive set, and method for polishing substrate |
JP6916192B2 (en) * | 2016-09-23 | 2021-08-11 | 株式会社フジミインコーポレーテッド | Polishing composition, polishing method using it, and manufacturing method of semiconductor substrate |
JP7153566B2 (en) | 2017-01-11 | 2022-10-14 | 株式会社フジミインコーポレーテッド | Polishing composition |
WO2018150856A1 (en) * | 2017-02-17 | 2018-08-23 | 株式会社フジミインコーポレーテッド | Polishing composition, method for producing same, and polishing method using polishing composition |
JP7209620B2 (en) | 2017-03-14 | 2023-01-20 | 株式会社フジミインコーポレーテッド | Polishing composition, method for producing same, method for polishing and method for producing substrate using same |
KR102634780B1 (en) * | 2017-04-17 | 2024-02-07 | 닛산 가가쿠 가부시키가이샤 | Polishing composition containing amphoteric surfactant |
CN109971358A (en) * | 2017-12-27 | 2019-07-05 | 安集微电子(上海)有限公司 | A kind of chemical mechanical polishing liquid |
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JP7128005B2 (en) * | 2018-03-26 | 2022-08-30 | 株式会社フジミインコーポレーテッド | Polishing composition |
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CN115160211B (en) * | 2022-06-23 | 2023-11-03 | 温州大学 | Green synthesis method of isoindolinone compound |
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-
2009
- 2009-01-29 WO PCT/JP2009/051510 patent/WO2009096495A1/en active Application Filing
- 2009-01-29 SG SG10201605686XA patent/SG10201605686XA/en unknown
- 2009-01-29 EP EP09705253A patent/EP2237311A4/en not_active Withdrawn
- 2009-01-29 CN CN201210587010.0A patent/CN103131330B/en not_active Expired - Fee Related
- 2009-01-29 CN CN2009801033315A patent/CN102084465A/en active Pending
- 2009-01-29 SG SG2013007075A patent/SG188090A1/en unknown
- 2009-01-29 KR KR1020147033389A patent/KR101564676B1/en active IP Right Grant
- 2009-01-29 KR KR1020107016583A patent/KR101564673B1/en active IP Right Grant
- 2009-01-29 JP JP2009551585A patent/JPWO2009096495A1/en active Pending
- 2009-01-29 US US12/864,811 patent/US10144849B2/en active Active
- 2009-02-02 TW TW098103228A patent/TWI554600B/en active
-
2013
- 2013-07-19 JP JP2013150331A patent/JP5695708B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
KR101564676B1 (en) | 2015-11-02 |
TWI554600B (en) | 2016-10-21 |
KR20100121469A (en) | 2010-11-17 |
SG188090A1 (en) | 2013-03-28 |
EP2237311A1 (en) | 2010-10-06 |
WO2009096495A1 (en) | 2009-08-06 |
KR101564673B1 (en) | 2015-10-30 |
CN103131330B (en) | 2015-09-23 |
KR20140146225A (en) | 2014-12-24 |
CN103131330A (en) | 2013-06-05 |
JPWO2009096495A1 (en) | 2011-05-26 |
EP2237311A4 (en) | 2011-11-30 |
TW200946660A (en) | 2009-11-16 |
JP2013251561A (en) | 2013-12-12 |
US20100301014A1 (en) | 2010-12-02 |
JP5695708B2 (en) | 2015-04-08 |
US10144849B2 (en) | 2018-12-04 |
CN102084465A (en) | 2011-06-01 |
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