GB2184288A - Oxidation inhibition of copper bonding pads using palladium - Google Patents

Oxidation inhibition of copper bonding pads using palladium Download PDF

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Publication number
GB2184288A
GB2184288A GB08614593A GB8614593A GB2184288A GB 2184288 A GB2184288 A GB 2184288A GB 08614593 A GB08614593 A GB 08614593A GB 8614593 A GB8614593 A GB 8614593A GB 2184288 A GB2184288 A GB 2184288A
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United Kingdom
Prior art keywords
copper
layer
angstroms
palladium
bonding
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GB08614593A
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GB8614593D0 (en
Inventor
Hem P Takiar
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National Semiconductor Corp
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National Semiconductor Corp
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Publication of GB8614593D0 publication Critical patent/GB8614593D0/en
Publication of GB2184288A publication Critical patent/GB2184288A/en
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    • H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19043—Component type being a resistor

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Wire Bonding (AREA)
GB08614593A 1985-12-16 1986-06-16 Oxidation inhibition of copper bonding pads using palladium Withdrawn GB2184288A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US80944385A 1985-12-16 1985-12-16

Publications (2)

Publication Number Publication Date
GB8614593D0 GB8614593D0 (en) 1986-07-23
GB2184288A true GB2184288A (en) 1987-06-17

Family

ID=25201346

Family Applications (1)

Application Number Title Priority Date Filing Date
GB08614593A Withdrawn GB2184288A (en) 1985-12-16 1986-06-16 Oxidation inhibition of copper bonding pads using palladium

Country Status (4)

Country Link
JP (1) JPS62145758A (de)
DE (1) DE3640248A1 (de)
FR (1) FR2591802A1 (de)
GB (1) GB2184288A (de)

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0308971A2 (de) * 1987-09-24 1989-03-29 Kabushiki Kaisha Toshiba Lötstelle und Verfahren zu ihrer Bewerkstelligung
EP0426246A1 (de) * 1989-11-01 1991-05-08 Koninklijke Philips Electronics N.V. Verbindungsstruktur
EP0589678A2 (de) * 1992-09-23 1994-03-30 Dow Corning Corporation Hermetischer Schutz für integrierte Schaltungen
EP0966045A1 (de) * 1997-06-11 1999-12-22 Micronas Intermetall GmbH Verfahren zum Herstellen einer Halbleiteranordnung mit strukturierter Metallisierung
WO2001001478A1 (de) * 1999-06-28 2001-01-04 Unaxis Balzers Aktiengellschaft Bauteil und verfahren zu dessen herstellung
WO2001008213A1 (en) * 1999-07-27 2001-02-01 International Business Machines Corporation REDUCED ELECTROMIGRATION AND STRESS INDUCED MIGRATION OF Cu WIRES BY SURFACE COATING
US6218732B1 (en) * 1998-09-15 2001-04-17 Texas Instruments Incorporated Copper bond pad process
WO2001035462A1 (en) * 1999-11-05 2001-05-17 Atmel Corporation Metal redistribution layer having solderable pads and wire bondable pads
GB2360295A (en) * 2000-03-15 2001-09-19 Ford Global Tech Inc Palladium and palladium/copper membranes for use in fuel cells
EP1139413A2 (de) * 2000-03-24 2001-10-04 Texas Instruments Incorporated Verfahren zum Drahtbonden
US6423642B1 (en) 1998-03-13 2002-07-23 Semitool, Inc. Reactor for processing a semiconductor wafer
US7026721B2 (en) * 1999-11-18 2006-04-11 Taiwan Semiconductor Manufacturing Company, Ltd. Method of improving copper pad adhesion
US7176576B2 (en) 2000-03-03 2007-02-13 Micron Technology, Inc. Conductive connection forming methods, oxidation reducing methods, and integrated circuits formed thereby
US7217325B2 (en) 1999-01-22 2007-05-15 Semitool, Inc. System for processing a workpiece
WO2008078268A1 (en) * 2006-12-27 2008-07-03 Nxp B.V. Semiconductor component with inertly encapsulated metal surface layers
US8354692B2 (en) 2006-03-15 2013-01-15 Infineon Technologies Ag Vertical semiconductor power switch, electronic component and methods of producing the same

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3823347A1 (de) * 1988-07-09 1990-01-11 Semikron Elektronik Gmbh Leistungs-halbleiterelement
JPH0448627U (de) * 1990-06-01 1992-04-24
DE4225138A1 (de) * 1992-07-30 1994-02-03 Daimler Benz Ag Multichipmodul und Verfahren zu dessen Herstellung
US6759597B1 (en) 1998-02-02 2004-07-06 International Business Machines Corporation Wire bonding to dual metal covered pad surfaces
JP3165129B2 (ja) * 1999-02-26 2001-05-14 日本発条株式会社 熱電発電用熱電変換モジュールブロック
JP2012069691A (ja) * 2010-09-22 2012-04-05 Toshiba Corp 半導体装置とその製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0034785A2 (de) * 1980-02-25 1981-09-02 International Business Machines Corporation Verfahren zum Reduzieren der Interdiffusion von Leitern und/oder Halbleitern im Kontakt miteinander

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4188438A (en) * 1975-06-02 1980-02-12 National Semiconductor Corporation Antioxidant coating of copper parts for thermal compression gang bonding of semiconductive devices
IT1075077B (it) * 1977-03-08 1985-04-22 Ates Componenti Elettron Metodo pr realizzare contatti su semiconduttori
US4652336A (en) * 1984-09-20 1987-03-24 Siemens Aktiengesellschaft Method of producing copper platforms for integrated circuits

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0034785A2 (de) * 1980-02-25 1981-09-02 International Business Machines Corporation Verfahren zum Reduzieren der Interdiffusion von Leitern und/oder Halbleitern im Kontakt miteinander

Cited By (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0308971A3 (en) * 1987-09-24 1990-10-10 Kabushiki Kaisha Toshiba Bump and method of manufacturing the same
EP0308971A2 (de) * 1987-09-24 1989-03-29 Kabushiki Kaisha Toshiba Lötstelle und Verfahren zu ihrer Bewerkstelligung
EP0426246A1 (de) * 1989-11-01 1991-05-08 Koninklijke Philips Electronics N.V. Verbindungsstruktur
EP0589678A2 (de) * 1992-09-23 1994-03-30 Dow Corning Corporation Hermetischer Schutz für integrierte Schaltungen
EP0589678A3 (de) * 1992-09-23 1995-04-12 Dow Corning Hermetischer Schutz für integrierte Schaltungen.
US5825078A (en) * 1992-09-23 1998-10-20 Dow Corning Corporation Hermetic protection for integrated circuits
EP0966045A1 (de) * 1997-06-11 1999-12-22 Micronas Intermetall GmbH Verfahren zum Herstellen einer Halbleiteranordnung mit strukturierter Metallisierung
US6423642B1 (en) 1998-03-13 2002-07-23 Semitool, Inc. Reactor for processing a semiconductor wafer
US6218732B1 (en) * 1998-09-15 2001-04-17 Texas Instruments Incorporated Copper bond pad process
US7217325B2 (en) 1999-01-22 2007-05-15 Semitool, Inc. System for processing a workpiece
WO2001001478A1 (de) * 1999-06-28 2001-01-04 Unaxis Balzers Aktiengellschaft Bauteil und verfahren zu dessen herstellung
US7468320B2 (en) 1999-07-27 2008-12-23 International Business Machines Corporation Reduced electromigration and stressed induced migration of copper wires by surface coating
US6342733B1 (en) 1999-07-27 2002-01-29 International Business Machines Corporation Reduced electromigration and stressed induced migration of Cu wires by surface coating
WO2001008213A1 (en) * 1999-07-27 2001-02-01 International Business Machines Corporation REDUCED ELECTROMIGRATION AND STRESS INDUCED MIGRATION OF Cu WIRES BY SURFACE COATING
WO2001035462A1 (en) * 1999-11-05 2001-05-17 Atmel Corporation Metal redistribution layer having solderable pads and wire bondable pads
US6762117B2 (en) 1999-11-05 2004-07-13 Atmel Corporation Method of fabricating metal redistribution layer having solderable pads and wire bondable pads
US6577008B2 (en) 1999-11-05 2003-06-10 Atmel Corporation Metal redistribution layer having solderable pads and wire bondable pads
US7026721B2 (en) * 1999-11-18 2006-04-11 Taiwan Semiconductor Manufacturing Company, Ltd. Method of improving copper pad adhesion
US7176576B2 (en) 2000-03-03 2007-02-13 Micron Technology, Inc. Conductive connection forming methods, oxidation reducing methods, and integrated circuits formed thereby
US7220663B2 (en) 2000-03-03 2007-05-22 Micron Technology, Inc. Conductive connection forming methods, oxidation reducing methods, and integrated circuits formed thereby
US7329607B2 (en) * 2000-03-03 2008-02-12 Micron Technology, Inc. Conductive connection forming methods, oxidation reducing methods, and integrated circuits formed thereby
GB2360295B (en) * 2000-03-15 2004-02-25 Ford Global Tech Inc Palladium and Palladium/copper thin flat membranes
GB2360295A (en) * 2000-03-15 2001-09-19 Ford Global Tech Inc Palladium and palladium/copper membranes for use in fuel cells
US6800555B2 (en) 2000-03-24 2004-10-05 Texas Instruments Incorporated Wire bonding process for copper-metallized integrated circuits
EP1139413A3 (de) * 2000-03-24 2002-06-12 Texas Instruments Incorporated Verfahren zum Drahtbonden
EP1139413A2 (de) * 2000-03-24 2001-10-04 Texas Instruments Incorporated Verfahren zum Drahtbonden
US8354692B2 (en) 2006-03-15 2013-01-15 Infineon Technologies Ag Vertical semiconductor power switch, electronic component and methods of producing the same
WO2008078268A1 (en) * 2006-12-27 2008-07-03 Nxp B.V. Semiconductor component with inertly encapsulated metal surface layers

Also Published As

Publication number Publication date
DE3640248A1 (de) 1987-06-19
GB8614593D0 (en) 1986-07-23
FR2591802A1 (fr) 1987-06-19
JPS62145758A (ja) 1987-06-29

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