GB8614593D0 - Oxidation inhibition of copper bonding pads - Google Patents

Oxidation inhibition of copper bonding pads

Info

Publication number
GB8614593D0
GB8614593D0 GB868614593A GB8614593A GB8614593D0 GB 8614593 D0 GB8614593 D0 GB 8614593D0 GB 868614593 A GB868614593 A GB 868614593A GB 8614593 A GB8614593 A GB 8614593A GB 8614593 D0 GB8614593 D0 GB 8614593D0
Authority
GB
United Kingdom
Prior art keywords
copper
layer
aluminium
bonding
palladium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB868614593A
Other versions
GB2184288A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Semiconductor Corp
Original Assignee
National Semiconductor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by National Semiconductor Corp filed Critical National Semiconductor Corp
Publication of GB8614593D0 publication Critical patent/GB8614593D0/en
Publication of GB2184288A publication Critical patent/GB2184288A/en
Withdrawn legal-status Critical Current

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    • H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19043—Component type being a resistor

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Wire Bonding (AREA)

Abstract

A copper bonding pad structure for the tape automated bonding of semiconductor devices includes a palladium anti-oxidation layer 30 over the exposed copper. The palladium layer has a thickness in the range from about 80 to 300 Angstroms, and is particularly suitable for use since it has a very low diffusivity into copper, even at elevated temperatures. In the preferred embodiment, the copper bonding pad structure comprises an aluminium layer applied directly over an aluminium metallization pad 12, a nickel layer 22 applied directly over the aluminium layer, and an overlying copper layer 24. The nickel layer inhibits the migration of copper into the aluminium, while the copper layer with palladium may be bonded directly to copper bump tape. In an alternative embodiment, a copper bump is formed directly over the copper bonding pad, which allows for bonding to a flat copper bonding tape. <IMAGE>
GB08614593A 1985-12-16 1986-06-16 Oxidation inhibition of copper bonding pads using palladium Withdrawn GB2184288A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US80944385A 1985-12-16 1985-12-16

Publications (2)

Publication Number Publication Date
GB8614593D0 true GB8614593D0 (en) 1986-07-23
GB2184288A GB2184288A (en) 1987-06-17

Family

ID=25201346

Family Applications (1)

Application Number Title Priority Date Filing Date
GB08614593A Withdrawn GB2184288A (en) 1985-12-16 1986-06-16 Oxidation inhibition of copper bonding pads using palladium

Country Status (4)

Country Link
JP (1) JPS62145758A (en)
DE (1) DE3640248A1 (en)
FR (1) FR2591802A1 (en)
GB (1) GB2184288A (en)

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US4970571A (en) * 1987-09-24 1990-11-13 Kabushiki Kaisha Toshiba Bump and method of manufacturing the same
DE3823347A1 (en) * 1988-07-09 1990-01-11 Semikron Elektronik Gmbh Power semiconductor element
NL8902695A (en) * 1989-11-01 1991-06-03 Philips Nv INTERCONNECTION STRUCTURE.
JPH0448627U (en) * 1990-06-01 1992-04-24
DE4225138A1 (en) * 1992-07-30 1994-02-03 Daimler Benz Ag Multichip module and method for its production
US5825078A (en) * 1992-09-23 1998-10-20 Dow Corning Corporation Hermetic protection for integrated circuits
DE19724595A1 (en) * 1997-06-11 1998-12-17 Micronas Semiconductor Holding Structured metal layer production especially on MOS structure
US6759597B1 (en) 1998-02-02 2004-07-06 International Business Machines Corporation Wire bonding to dual metal covered pad surfaces
US6423642B1 (en) 1998-03-13 2002-07-23 Semitool, Inc. Reactor for processing a semiconductor wafer
US6218732B1 (en) * 1998-09-15 2001-04-17 Texas Instruments Incorporated Copper bond pad process
US7217325B2 (en) 1999-01-22 2007-05-15 Semitool, Inc. System for processing a workpiece
JP3165129B2 (en) * 1999-02-26 2001-05-14 日本発条株式会社 Thermoelectric conversion module block for thermoelectric generation
KR100863388B1 (en) * 1999-06-28 2008-10-13 인피콘 게엠베하 Component And Method For The Production Thereof
US6342733B1 (en) 1999-07-27 2002-01-29 International Business Machines Corporation Reduced electromigration and stressed induced migration of Cu wires by surface coating
US6511901B1 (en) 1999-11-05 2003-01-28 Atmel Corporation Metal redistribution layer having solderable pads and wire bondable pads
US6191023B1 (en) * 1999-11-18 2001-02-20 Taiwan Semiconductor Manufacturing Company Method of improving copper pad adhesion
US6613671B1 (en) * 2000-03-03 2003-09-02 Micron Technology, Inc. Conductive connection forming methods, oxidation reducing methods, and integrated circuits formed thereby
US6171712B1 (en) * 2000-03-15 2001-01-09 Ford Global Technologies, Inc. Palladium and palladium/copper thin flat membranes
DE60109339T2 (en) * 2000-03-24 2006-01-12 Texas Instruments Incorporated, Dallas Method for wire bonding
US8354692B2 (en) 2006-03-15 2013-01-15 Infineon Technologies Ag Vertical semiconductor power switch, electronic component and methods of producing the same
WO2008078268A1 (en) * 2006-12-27 2008-07-03 Nxp B.V. Semiconductor component with inertly encapsulated metal surface layers
JP2012069691A (en) * 2010-09-22 2012-04-05 Toshiba Corp Semiconductor device and method of manufacturing the same

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US4188438A (en) * 1975-06-02 1980-02-12 National Semiconductor Corporation Antioxidant coating of copper parts for thermal compression gang bonding of semiconductive devices
IT1075077B (en) * 1977-03-08 1985-04-22 Ates Componenti Elettron METHOD PR REALIZING CONTACTS ON SEMICONDUCTORS
US4282043A (en) * 1980-02-25 1981-08-04 International Business Machines Corporation Process for reducing the interdiffusion of conductors and/or semiconductors in contact with each other
US4652336A (en) * 1984-09-20 1987-03-24 Siemens Aktiengesellschaft Method of producing copper platforms for integrated circuits

Also Published As

Publication number Publication date
GB2184288A (en) 1987-06-17
JPS62145758A (en) 1987-06-29
FR2591802A1 (en) 1987-06-19
DE3640248A1 (en) 1987-06-19

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