FR2664742A1 - Dispositif a semi-conducteur pour memoire vive dynamique et son procede de fabrication. - Google Patents
Dispositif a semi-conducteur pour memoire vive dynamique et son procede de fabrication. Download PDFInfo
- Publication number
- FR2664742A1 FR2664742A1 FR9011623A FR9011623A FR2664742A1 FR 2664742 A1 FR2664742 A1 FR 2664742A1 FR 9011623 A FR9011623 A FR 9011623A FR 9011623 A FR9011623 A FR 9011623A FR 2664742 A1 FR2664742 A1 FR 2664742A1
- Authority
- FR
- France
- Prior art keywords
- layer
- groove
- forming
- semiconductor device
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 title claims description 32
- 238000004519 manufacturing process Methods 0.000 title claims description 19
- 230000015654 memory Effects 0.000 title claims description 13
- 239000000758 substrate Substances 0.000 claims abstract description 29
- 238000009792 diffusion process Methods 0.000 claims abstract description 17
- 230000000903 blocking effect Effects 0.000 claims abstract description 13
- 238000000034 method Methods 0.000 claims description 40
- 150000004767 nitrides Chemical class 0.000 claims description 23
- 229920002120 photoresistant polymer Polymers 0.000 claims description 18
- 239000012535 impurity Substances 0.000 claims description 12
- 238000005530 etching Methods 0.000 claims description 11
- 239000004020 conductor Substances 0.000 claims description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 7
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 5
- 238000001039 wet etching Methods 0.000 claims description 2
- 239000003990 capacitor Substances 0.000 abstract description 35
- 230000035515 penetration Effects 0.000 abstract description 5
- 239000002245 particle Substances 0.000 abstract description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000000137 annealing Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate
- H10B12/377—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate having a storage electrode extension located over the transistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/92—Capacitors having potential barriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Thin Film Transistor (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019900010587A KR930006144B1 (ko) | 1990-07-12 | 1990-07-12 | 반도체 장치 및 방법 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| FR2664742A1 true FR2664742A1 (fr) | 1992-01-17 |
Family
ID=19301186
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR9011623A Withdrawn FR2664742A1 (fr) | 1990-07-12 | 1990-09-20 | Dispositif a semi-conducteur pour memoire vive dynamique et son procede de fabrication. |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JPH0472757A (de) |
| KR (1) | KR930006144B1 (de) |
| DE (1) | DE4029070A1 (de) |
| FR (1) | FR2664742A1 (de) |
| GB (1) | GB2246014A (de) |
| IT (1) | IT1243102B (de) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107074729B (zh) * | 2014-10-31 | 2020-08-04 | 陶氏环球技术有限责任公司 | 分离方法 |
| KR102482504B1 (ko) * | 2018-04-23 | 2022-12-30 | 주식회사 엘지화학 | t-부틸 메타크릴레이트의 제조방법 |
| US11031404B2 (en) * | 2018-11-26 | 2021-06-08 | Etron Technology, Inc. | Dynamic memory structure with a shared counter electrode |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0164829A1 (de) * | 1984-04-19 | 1985-12-18 | Nippon Telegraph And Telephone Corporation | Halbleiterspeicherbauelement und Verfahren zur Herstellung |
| JPH01101664A (ja) * | 1987-10-15 | 1989-04-19 | Nec Corp | 半導体集積回路装置 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6187358A (ja) * | 1984-10-05 | 1986-05-02 | Nec Corp | 半導体記憶装置およびその製造方法 |
| JPS61258468A (ja) * | 1985-05-13 | 1986-11-15 | Hitachi Ltd | 半導体記憶装置およびその製造方法 |
| JPS627153A (ja) * | 1985-07-03 | 1987-01-14 | Hitachi Ltd | 半導体メモリ |
| JPS627152A (ja) * | 1985-07-03 | 1987-01-14 | Hitachi Ltd | 半導体メモリ |
| JPS62120070A (ja) * | 1985-11-20 | 1987-06-01 | Toshiba Corp | 半導体記憶装置 |
| EP0236089B1 (de) * | 1986-03-03 | 1992-08-05 | Fujitsu Limited | Einen Rillenkondensator enthaltender dynamischer Speicher mit wahlfreiem Zugriff |
| JPS6384149A (ja) * | 1986-09-29 | 1988-04-14 | Hitachi Ltd | 半導体メモリの製造方法 |
| GB2199695B (en) * | 1987-01-06 | 1990-07-25 | Samsung Semiconductor Inc | Dynamic random access memory with selective well biasing |
| DE3916228C2 (de) * | 1988-05-18 | 1995-06-22 | Toshiba Kawasaki Kk | Halbleiterspeichervorrichtung mit Stapelkondensatorzellenstruktur und Verfahren zu ihrer Herstellung |
-
1990
- 1990-07-12 KR KR1019900010587A patent/KR930006144B1/ko not_active IP Right Cessation
- 1990-09-13 DE DE4029070A patent/DE4029070A1/de active Granted
- 1990-09-19 IT IT02151690A patent/IT1243102B/it active IP Right Grant
- 1990-09-19 GB GB9020480A patent/GB2246014A/en not_active Withdrawn
- 1990-09-20 FR FR9011623A patent/FR2664742A1/fr not_active Withdrawn
- 1990-09-20 JP JP2254054A patent/JPH0472757A/ja active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0164829A1 (de) * | 1984-04-19 | 1985-12-18 | Nippon Telegraph And Telephone Corporation | Halbleiterspeicherbauelement und Verfahren zur Herstellung |
| JPH01101664A (ja) * | 1987-10-15 | 1989-04-19 | Nec Corp | 半導体集積回路装置 |
Non-Patent Citations (1)
| Title |
|---|
| PATENT ABSTRACTS OF JAPAN, vol. 13, no. 343 (E-796)[3691], 2 août 1989; & JP-A-1 101 664 (NEC CORP.) 19-04-1989 * |
Also Published As
| Publication number | Publication date |
|---|---|
| GB9020480D0 (en) | 1990-10-31 |
| IT9021516A1 (it) | 1992-03-19 |
| IT1243102B (it) | 1994-05-24 |
| IT9021516A0 (it) | 1990-09-19 |
| GB2246014A (en) | 1992-01-15 |
| KR920003557A (ko) | 1992-02-29 |
| DE4029070A1 (de) | 1992-01-23 |
| DE4029070C2 (de) | 1992-07-16 |
| JPH0472757A (ja) | 1992-03-06 |
| KR930006144B1 (ko) | 1993-07-07 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |