FR2524201B1 - Procede de fabrication d'un dispositif semi-conducteur du type multicouche - Google Patents

Procede de fabrication d'un dispositif semi-conducteur du type multicouche

Info

Publication number
FR2524201B1
FR2524201B1 FR8302561A FR8302561A FR2524201B1 FR 2524201 B1 FR2524201 B1 FR 2524201B1 FR 8302561 A FR8302561 A FR 8302561A FR 8302561 A FR8302561 A FR 8302561A FR 2524201 B1 FR2524201 B1 FR 2524201B1
Authority
FR
France
Prior art keywords
manufacturing
semiconductor device
type semiconductor
multilayer type
multilayer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8302561A
Other languages
English (en)
Other versions
FR2524201A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Publication of FR2524201A1 publication Critical patent/FR2524201A1/fr
Application granted granted Critical
Publication of FR2524201B1 publication Critical patent/FR2524201B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0688—Integrated circuits having a three-dimensional layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02488—Insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02691—Scanning of a beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8221—Three dimensional integrated circuits stacked in different levels

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Optics & Photonics (AREA)
  • Recrystallisation Techniques (AREA)
FR8302561A 1982-03-25 1983-02-17 Procede de fabrication d'un dispositif semi-conducteur du type multicouche Expired FR2524201B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57046288A JPS58164219A (ja) 1982-03-25 1982-03-25 積層型半導体装置の製造方法

Publications (2)

Publication Number Publication Date
FR2524201A1 FR2524201A1 (fr) 1983-09-30
FR2524201B1 true FR2524201B1 (fr) 1985-07-12

Family

ID=12743022

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8302561A Expired FR2524201B1 (fr) 1982-03-25 1983-02-17 Procede de fabrication d'un dispositif semi-conducteur du type multicouche

Country Status (4)

Country Link
US (1) US4487635A (fr)
JP (1) JPS58164219A (fr)
FR (1) FR2524201B1 (fr)
GB (1) GB2119168B (fr)

Families Citing this family (220)

* Cited by examiner, † Cited by third party
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JPS577161A (en) * 1980-06-16 1982-01-14 Toshiba Corp Mos semiconductor device
US4619034A (en) * 1983-05-02 1986-10-28 Ncr Corporation Method of making laser recrystallized silicon-on-insulator nonvolatile memory device
JPS6089953A (ja) * 1983-10-22 1985-05-20 Agency Of Ind Science & Technol 積層型半導体装置の製造方法
CA1197628A (fr) * 1984-01-05 1985-12-03 Thomas W. Macelwee Fabrication de dispositifs mos empiles
JPS6115319A (ja) * 1984-07-02 1986-01-23 Sharp Corp 半導体装置の製造方法
JPS6177359A (ja) * 1984-09-21 1986-04-19 Fujitsu Ltd 半導体記憶装置
JPS61125122A (ja) * 1984-11-22 1986-06-12 Agency Of Ind Science & Technol 半導体薄膜結晶層の製造方法
US4651410A (en) * 1984-12-18 1987-03-24 Semiconductor Division Thomson-Csf Components Corporation Method of fabricating regions of a bipolar microwave integratable transistor
US5045501A (en) * 1986-08-25 1991-09-03 Hughes Aircraft Company Method of forming an integrated circuit structure with multiple common planes
JP2516604B2 (ja) * 1986-10-17 1996-07-24 キヤノン株式会社 相補性ｍｏｓ集積回路装置の製造方法
GB2204066A (en) * 1987-04-06 1988-11-02 Philips Electronic Associated A method for manufacturing a semiconductor device having a layered structure
US4760036A (en) * 1987-06-15 1988-07-26 Delco Electronics Corporation Process for growing silicon-on-insulator wafers using lateral epitaxial growth with seed window oxidation
US4799097A (en) * 1987-07-29 1989-01-17 Ncr Corporation CMOS integrated devices in seeded islands
US4902642A (en) * 1987-08-07 1990-02-20 Texas Instruments, Incorporated Epitaxial process for silicon on insulator structure
JPH0316125A (ja) * 1989-03-30 1991-01-24 Mitsubishi Electric Corp 半導体装置の製造方法
JP2973492B2 (ja) * 1990-08-22 1999-11-08 ソニー株式会社 半導体薄膜の結晶化方法
US5930608A (en) * 1992-02-21 1999-07-27 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a thin film transistor in which the channel region of the transistor consists of two portions of differing crystallinity
US5158906A (en) * 1991-06-13 1992-10-27 Huang Chi Tso Method of producing dielectric isolated single crystalline thin film
US5612552A (en) * 1994-03-31 1997-03-18 Lsi Logic Corporation Multilevel gate array integrated circuit structure with perpendicular access to all active device regions
US6150695A (en) * 1996-10-30 2000-11-21 Advanced Micro Devices, Inc. Multilevel transistor formation employing a local substrate formed within a shallow trench
TW428243B (en) * 1999-01-22 2001-04-01 United Microelectronics Corp Method for enhancing the planarization of the die region and scribe line by using dummy pattern
US6970644B2 (en) 2000-12-21 2005-11-29 Mattson Technology, Inc. Heating configuration for use in thermal processing chambers
US7015422B2 (en) 2000-12-21 2006-03-21 Mattson Technology, Inc. System and process for heating semiconductor wafers by optimizing absorption of electromagnetic energy
US20030109148A1 (en) * 2001-10-18 2003-06-12 Applied Materials, Inc. Technique for growing single crystal material on top of an insulator
KR100790863B1 (ko) * 2005-12-28 2008-01-03 삼성전자주식회사 나노 와이어 제조 방법
WO2008156016A1 (fr) * 2007-06-20 2008-12-24 Sumitomo Electric Fine Polymer, Inc. Matériau composite de fluororésine, ustensile de cuisson, cuisinière, rouleau pour appareil oa, courroie pour appareil oa, et procédé de production
US7986042B2 (en) 2009-04-14 2011-07-26 Monolithic 3D Inc. Method for fabrication of a semiconductor device and structure
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US4487635A (en) 1984-12-11
FR2524201A1 (fr) 1983-09-30
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JPS58164219A (ja) 1983-09-29
GB2119168A (en) 1983-11-09
GB2119168B (en) 1985-11-27

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