FR2294514A1 - Cellule memoire comprenant des transistors a effet de champ a grille isolee - Google Patents
Cellule memoire comprenant des transistors a effet de champ a grille isoleeInfo
- Publication number
- FR2294514A1 FR2294514A1 FR7537895A FR7537895A FR2294514A1 FR 2294514 A1 FR2294514 A1 FR 2294514A1 FR 7537895 A FR7537895 A FR 7537895A FR 7537895 A FR7537895 A FR 7537895A FR 2294514 A1 FR2294514 A1 FR 2294514A1
- Authority
- FR
- France
- Prior art keywords
- memory cell
- field effect
- effect transistors
- cell including
- including insulated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Static Random-Access Memory (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19742459023 DE2459023C3 (de) | 1974-12-13 | 1974-12-13 | Integrierbare, aus Isolierschicht-Feldeffekttransistoren gleicher Leitungsund Steuerungsart aufgebaute statische Schreib/Lesespeicherzelle |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| FR2294514A1 true FR2294514A1 (fr) | 1976-07-09 |
Family
ID=5933342
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7537895A Withdrawn FR2294514A1 (fr) | 1974-12-13 | 1975-12-11 | Cellule memoire comprenant des transistors a effet de champ a grille isolee |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPS5183742A (fr) |
| DE (1) | DE2459023C3 (fr) |
| FR (1) | FR2294514A1 (fr) |
| GB (1) | GB1483868A (fr) |
| IT (1) | IT1050037B (fr) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2663147A1 (fr) * | 1990-06-12 | 1991-12-13 | Sgs Thomson Microelectronics | Memoire programmable a double transistor a grille flottante. |
| FR2703502A1 (fr) * | 1993-04-02 | 1994-10-07 | Matra Mhs | Cellule mémoire statique de type MOS. |
-
1974
- 1974-12-13 DE DE19742459023 patent/DE2459023C3/de not_active Expired
-
1975
- 1975-12-09 GB GB5039275A patent/GB1483868A/en not_active Expired
- 1975-12-10 IT IT3012975A patent/IT1050037B/it active
- 1975-12-11 FR FR7537895A patent/FR2294514A1/fr not_active Withdrawn
- 1975-12-13 JP JP50147944A patent/JPS5183742A/ja active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2663147A1 (fr) * | 1990-06-12 | 1991-12-13 | Sgs Thomson Microelectronics | Memoire programmable a double transistor a grille flottante. |
| FR2703502A1 (fr) * | 1993-04-02 | 1994-10-07 | Matra Mhs | Cellule mémoire statique de type MOS. |
Also Published As
| Publication number | Publication date |
|---|---|
| DE2459023B2 (de) | 1979-01-18 |
| JPS5183742A (en) | 1976-07-22 |
| GB1483868A (en) | 1977-08-24 |
| IT1050037B (it) | 1981-03-10 |
| DE2459023C3 (de) | 1979-09-13 |
| DE2459023A1 (de) | 1976-06-16 |
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| NL7513144A (nl) | Informatiegeheugeninrichting. | |
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| FR2294514A1 (fr) | Cellule memoire comprenant des transistors a effet de champ a grille isolee | |
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| AT376845B (de) | Speicher-feldeffekttransistor | |
| BE767882A (fr) | Transistor a effet de champ a grille isolee | |
| SE415415B (sv) | Minnes-fet | |
| NL7503082A (nl) | Besturingsgeheugeninrichting. | |
| ATA62373A (de) | Speicherkassette | |
| SU522523A1 (ru) | Запоминающее устройство | |
| IT1038236B (it) | Memoria fissa manipolabile | |
| FR2284194A1 (fr) | Transistor a effet de champ vertical |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |