JPS5183742A - Randamu akusesu memori - Google Patents

Randamu akusesu memori

Info

Publication number
JPS5183742A
JPS5183742A JP50147944A JP14794475A JPS5183742A JP S5183742 A JPS5183742 A JP S5183742A JP 50147944 A JP50147944 A JP 50147944A JP 14794475 A JP14794475 A JP 14794475A JP S5183742 A JPS5183742 A JP S5183742A
Authority
JP
Japan
Prior art keywords
randamu
akusesu
memori
randamu akusesu
akusesu memori
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP50147944A
Other languages
English (en)
Inventor
Rintoshuteeto Gyuntaa
Horutsuman Deiitaa
Murinetsuku Danieru
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Micronas GmbH
Original Assignee
Deutsche ITT Industries GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Deutsche ITT Industries GmbH filed Critical Deutsche ITT Industries GmbH
Publication of JPS5183742A publication Critical patent/JPS5183742A/ja
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
  • Semiconductor Memories (AREA)
JP50147944A 1974-12-13 1975-12-13 Randamu akusesu memori Pending JPS5183742A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19742459023 DE2459023C3 (de) 1974-12-13 1974-12-13 Integrierbare, aus Isolierschicht-Feldeffekttransistoren gleicher Leitungsund Steuerungsart aufgebaute statische Schreib/Lesespeicherzelle

Publications (1)

Publication Number Publication Date
JPS5183742A true JPS5183742A (en) 1976-07-22

Family

ID=5933342

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50147944A Pending JPS5183742A (en) 1974-12-13 1975-12-13 Randamu akusesu memori

Country Status (5)

Country Link
JP (1) JPS5183742A (ja)
DE (1) DE2459023C3 (ja)
FR (1) FR2294514A1 (ja)
GB (1) GB1483868A (ja)
IT (1) IT1050037B (ja)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2663147A1 (fr) * 1990-06-12 1991-12-13 Sgs Thomson Microelectronics Memoire programmable a double transistor a grille flottante.
FR2703502B1 (fr) * 1993-04-02 1995-06-16 Matra Mhs Cellule memoire statique de type mos.

Also Published As

Publication number Publication date
FR2294514A1 (fr) 1976-07-09
DE2459023A1 (de) 1976-06-16
GB1483868A (en) 1977-08-24
DE2459023B2 (de) 1979-01-18
DE2459023C3 (de) 1979-09-13
IT1050037B (it) 1981-03-10

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