FR2284194A1 - Transistor a effet de champ vertical - Google Patents

Transistor a effet de champ vertical

Info

Publication number
FR2284194A1
FR2284194A1 FR7527176A FR7527176A FR2284194A1 FR 2284194 A1 FR2284194 A1 FR 2284194A1 FR 7527176 A FR7527176 A FR 7527176A FR 7527176 A FR7527176 A FR 7527176A FR 2284194 A1 FR2284194 A1 FR 2284194A1
Authority
FR
France
Prior art keywords
field effect
effect transistor
vertical field
vertical
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7527176A
Other languages
English (en)
Other versions
FR2284194B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Publication of FR2284194A1 publication Critical patent/FR2284194A1/fr
Application granted granted Critical
Publication of FR2284194B1 publication Critical patent/FR2284194B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
    • H01L29/8083—Vertical transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)
FR7527176A 1974-09-04 1975-09-04 Transistor a effet de champ vertical Granted FR2284194A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10155574A JPS5739062B2 (fr) 1974-09-04 1974-09-04

Publications (2)

Publication Number Publication Date
FR2284194A1 true FR2284194A1 (fr) 1976-04-02
FR2284194B1 FR2284194B1 (fr) 1979-01-19

Family

ID=14303654

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7527176A Granted FR2284194A1 (fr) 1974-09-04 1975-09-04 Transistor a effet de champ vertical

Country Status (6)

Country Link
JP (1) JPS5739062B2 (fr)
CA (1) CA1035052A (fr)
DE (1) DE2539021A1 (fr)
FR (1) FR2284194A1 (fr)
GB (1) GB1525732A (fr)
NL (1) NL7510282A (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5299787A (en) * 1976-02-18 1977-08-22 Toshiba Corp Junction type field effect transistor and its production

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB837651A (en) * 1956-12-10 1960-06-15 Teszner Stanislas High power field-effect transistor

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5418112B2 (fr) * 1971-12-20 1979-07-05
IT981240B (it) * 1972-03-10 1974-10-10 Teszner S Perfezionamenti ai gridistori per iperfrequenze

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB837651A (en) * 1956-12-10 1960-06-15 Teszner Stanislas High power field-effect transistor

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
*REVUE US: "PROCEEDINGS OF THE IEEE", VOLUME 59, NO. 5, MAI 1971, "A PROPOSED VERTICAL CHANNEL VARIABLE RESISTANCE FET", A.N. MORGAN ET W.G. TOWNSEND, PAGES 805 - 807) *
REVUE US: "PROCEEDINGS OF THE IEEE", VOLUME 51, JUILLET 1963, "A UNIPOLAR STRUCTURE APPLYING LATERAL DIFFUSION", S.A. ROOSILD ET AL, PAGES 1059 - 1060 *

Also Published As

Publication number Publication date
FR2284194B1 (fr) 1979-01-19
JPS5739062B2 (fr) 1982-08-19
NL7510282A (nl) 1976-03-08
DE2539021A1 (de) 1976-03-25
JPS5128763A (fr) 1976-03-11
GB1525732A (en) 1978-09-20
CA1035052A (fr) 1978-07-18

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Legal Events

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