FR2284194A1 - Transistor a effet de champ vertical - Google Patents
Transistor a effet de champ verticalInfo
- Publication number
- FR2284194A1 FR2284194A1 FR7527176A FR7527176A FR2284194A1 FR 2284194 A1 FR2284194 A1 FR 2284194A1 FR 7527176 A FR7527176 A FR 7527176A FR 7527176 A FR7527176 A FR 7527176A FR 2284194 A1 FR2284194 A1 FR 2284194A1
- Authority
- FR
- France
- Prior art keywords
- field effect
- effect transistor
- vertical field
- vertical
- transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005669 field effect Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
- H01L29/8083—Vertical transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10155574A JPS5739062B2 (fr) | 1974-09-04 | 1974-09-04 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2284194A1 true FR2284194A1 (fr) | 1976-04-02 |
FR2284194B1 FR2284194B1 (fr) | 1979-01-19 |
Family
ID=14303654
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7527176A Granted FR2284194A1 (fr) | 1974-09-04 | 1975-09-04 | Transistor a effet de champ vertical |
Country Status (6)
Country | Link |
---|---|
JP (1) | JPS5739062B2 (fr) |
CA (1) | CA1035052A (fr) |
DE (1) | DE2539021A1 (fr) |
FR (1) | FR2284194A1 (fr) |
GB (1) | GB1525732A (fr) |
NL (1) | NL7510282A (fr) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5299787A (en) * | 1976-02-18 | 1977-08-22 | Toshiba Corp | Junction type field effect transistor and its production |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB837651A (en) * | 1956-12-10 | 1960-06-15 | Teszner Stanislas | High power field-effect transistor |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5418112B2 (fr) * | 1971-12-20 | 1979-07-05 | ||
IT981240B (it) * | 1972-03-10 | 1974-10-10 | Teszner S | Perfezionamenti ai gridistori per iperfrequenze |
-
1974
- 1974-09-04 JP JP10155574A patent/JPS5739062B2/ja not_active Expired
-
1975
- 1975-08-20 CA CA233,828A patent/CA1035052A/fr not_active Expired
- 1975-08-29 GB GB3569075A patent/GB1525732A/en not_active Expired
- 1975-09-01 NL NL7510282A patent/NL7510282A/xx not_active Application Discontinuation
- 1975-09-02 DE DE19752539021 patent/DE2539021A1/de not_active Ceased
- 1975-09-04 FR FR7527176A patent/FR2284194A1/fr active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB837651A (en) * | 1956-12-10 | 1960-06-15 | Teszner Stanislas | High power field-effect transistor |
Non-Patent Citations (2)
Title |
---|
*REVUE US: "PROCEEDINGS OF THE IEEE", VOLUME 59, NO. 5, MAI 1971, "A PROPOSED VERTICAL CHANNEL VARIABLE RESISTANCE FET", A.N. MORGAN ET W.G. TOWNSEND, PAGES 805 - 807) * |
REVUE US: "PROCEEDINGS OF THE IEEE", VOLUME 51, JUILLET 1963, "A UNIPOLAR STRUCTURE APPLYING LATERAL DIFFUSION", S.A. ROOSILD ET AL, PAGES 1059 - 1060 * |
Also Published As
Publication number | Publication date |
---|---|
FR2284194B1 (fr) | 1979-01-19 |
JPS5739062B2 (fr) | 1982-08-19 |
NL7510282A (nl) | 1976-03-08 |
DE2539021A1 (de) | 1976-03-25 |
JPS5128763A (fr) | 1976-03-11 |
GB1525732A (en) | 1978-09-20 |
CA1035052A (fr) | 1978-07-18 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
CD | Change of name or company name |